TWI553722B - Silicon wafer manufacturing method and silicon wafer - Google Patents

Silicon wafer manufacturing method and silicon wafer Download PDF

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Publication number
TWI553722B
TWI553722B TW104101629A TW104101629A TWI553722B TW I553722 B TWI553722 B TW I553722B TW 104101629 A TW104101629 A TW 104101629A TW 104101629 A TW104101629 A TW 104101629A TW I553722 B TWI553722 B TW I553722B
Authority
TW
Taiwan
Prior art keywords
cleaning
wafer
polishing
haze
trimming
Prior art date
Application number
TW104101629A
Other languages
English (en)
Chinese (zh)
Other versions
TW201545222A (zh
Inventor
杉森勝久
小佐佐和明
Original Assignee
Ｓｕｍｃｏ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｓｕｍｃｏ股份有限公司 filed Critical Ｓｕｍｃｏ股份有限公司
Publication of TW201545222A publication Critical patent/TW201545222A/zh
Application granted granted Critical
Publication of TWI553722B publication Critical patent/TWI553722B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW104101629A 2014-05-19 2015-01-19 Silicon wafer manufacturing method and silicon wafer TWI553722B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014103609A JP6311446B2 (ja) 2014-05-19 2014-05-19 シリコンウェーハの製造方法

Publications (2)

Publication Number Publication Date
TW201545222A TW201545222A (zh) 2015-12-01
TWI553722B true TWI553722B (zh) 2016-10-11

Family

ID=54577621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104101629A TWI553722B (zh) 2014-05-19 2015-01-19 Silicon wafer manufacturing method and silicon wafer

Country Status (3)

Country Link
JP (1) JP6311446B2 (https=)
CN (1) CN105097444B (https=)
TW (1) TWI553722B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6432497B2 (ja) * 2015-12-10 2018-12-05 信越半導体株式会社 研磨方法
JP6641197B2 (ja) 2016-03-10 2020-02-05 株式会社荏原製作所 基板の研磨装置および研磨方法
JP7327974B2 (ja) * 2019-04-01 2023-08-16 株式会社ディスコ ウェーハの分割方法
JP7556426B1 (ja) * 2023-05-30 2024-09-26 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ
CN116852183B (zh) * 2023-08-02 2024-04-02 山东有研半导体材料有限公司 一种用于大型晶圆研磨机改善晶圆形貌的研磨工艺
CN117161839B (zh) * 2023-11-01 2024-02-06 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法
CN117549184A (zh) * 2023-11-14 2024-02-13 苏州芯动利半导体科技有限公司 一种碳化硅晶圆研磨抛光工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080072926A1 (en) * 2004-09-30 2008-03-27 Shin-Etsu Handotai Co., Ltd. Method for Cleaning Soi Wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法
JP2000315635A (ja) * 1999-04-30 2000-11-14 Mitsubishi Materials Silicon Corp 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法
JP2004291150A (ja) * 2003-03-27 2004-10-21 Tungaloy Corp 立方晶窒化硼素焼結体回転工具
JP4683233B2 (ja) * 2004-09-30 2011-05-18 信越半導体株式会社 半導体ウェーハの製造方法
KR101391029B1 (ko) * 2006-09-06 2014-04-30 니타 하스 인코포레이티드 연마 패드
JP2009252413A (ja) * 2008-04-02 2009-10-29 Kobe Steel Ltd 電子線源
US20110300776A1 (en) * 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
JP2012001798A (ja) * 2010-06-21 2012-01-05 Yokogawa Electric Corp 電解装置用電極の製造方法
US20130095660A1 (en) * 2010-07-02 2013-04-18 Sumco Corporation Method for polishing silicon wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080072926A1 (en) * 2004-09-30 2008-03-27 Shin-Etsu Handotai Co., Ltd. Method for Cleaning Soi Wafer

Also Published As

Publication number Publication date
CN105097444B (zh) 2018-11-23
JP6311446B2 (ja) 2018-04-18
CN105097444A (zh) 2015-11-25
TW201545222A (zh) 2015-12-01
JP2015220370A (ja) 2015-12-07

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