CN105097444B - 硅晶片的制造方法及硅晶片 - Google Patents

硅晶片的制造方法及硅晶片 Download PDF

Info

Publication number
CN105097444B
CN105097444B CN201510171396.0A CN201510171396A CN105097444B CN 105097444 B CN105097444 B CN 105097444B CN 201510171396 A CN201510171396 A CN 201510171396A CN 105097444 B CN105097444 B CN 105097444B
Authority
CN
China
Prior art keywords
cleaning
silicon wafer
wafer
polishing
haze
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510171396.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN105097444A (zh
Inventor
杉森胜久
小佐佐和明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN105097444A publication Critical patent/CN105097444A/zh
Application granted granted Critical
Publication of CN105097444B publication Critical patent/CN105097444B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201510171396.0A 2014-05-19 2015-04-13 硅晶片的制造方法及硅晶片 Active CN105097444B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014103609A JP6311446B2 (ja) 2014-05-19 2014-05-19 シリコンウェーハの製造方法
JP2014-103609 2014-05-19

Publications (2)

Publication Number Publication Date
CN105097444A CN105097444A (zh) 2015-11-25
CN105097444B true CN105097444B (zh) 2018-11-23

Family

ID=54577621

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510171396.0A Active CN105097444B (zh) 2014-05-19 2015-04-13 硅晶片的制造方法及硅晶片

Country Status (3)

Country Link
JP (1) JP6311446B2 (https=)
CN (1) CN105097444B (https=)
TW (1) TWI553722B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6432497B2 (ja) * 2015-12-10 2018-12-05 信越半導体株式会社 研磨方法
JP6641197B2 (ja) 2016-03-10 2020-02-05 株式会社荏原製作所 基板の研磨装置および研磨方法
JP7327974B2 (ja) * 2019-04-01 2023-08-16 株式会社ディスコ ウェーハの分割方法
JP7556426B1 (ja) * 2023-05-30 2024-09-26 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ
CN116852183B (zh) * 2023-08-02 2024-04-02 山东有研半导体材料有限公司 一种用于大型晶圆研磨机改善晶圆形貌的研磨工艺
CN117161839B (zh) * 2023-11-01 2024-02-06 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法
CN117549184A (zh) * 2023-11-14 2024-02-13 苏州芯动利半导体科技有限公司 一种碳化硅晶圆研磨抛光工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315635A (ja) * 1999-04-30 2000-11-14 Mitsubishi Materials Silicon Corp 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法
CN102725827A (zh) * 2010-06-03 2012-10-10 应用材料公司 每个平台研磨站的多载具头中的研磨制程的调节

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法
JP2004291150A (ja) * 2003-03-27 2004-10-21 Tungaloy Corp 立方晶窒化硼素焼結体回転工具
JP4683233B2 (ja) * 2004-09-30 2011-05-18 信越半導体株式会社 半導体ウェーハの製造方法
JP4661784B2 (ja) * 2004-09-30 2011-03-30 信越半導体株式会社 Ｓｏｉウエーハの洗浄方法
KR101391029B1 (ko) * 2006-09-06 2014-04-30 니타 하스 인코포레이티드 연마 패드
JP2009252413A (ja) * 2008-04-02 2009-10-29 Kobe Steel Ltd 電子線源
JP2012001798A (ja) * 2010-06-21 2012-01-05 Yokogawa Electric Corp 電解装置用電極の製造方法
US20130095660A1 (en) * 2010-07-02 2013-04-18 Sumco Corporation Method for polishing silicon wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315635A (ja) * 1999-04-30 2000-11-14 Mitsubishi Materials Silicon Corp 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法
CN102725827A (zh) * 2010-06-03 2012-10-10 应用材料公司 每个平台研磨站的多载具头中的研磨制程的调节

Also Published As

Publication number Publication date
JP6311446B2 (ja) 2018-04-18
CN105097444A (zh) 2015-11-25
TW201545222A (zh) 2015-12-01
JP2015220370A (ja) 2015-12-07
TWI553722B (zh) 2016-10-11

Similar Documents

Publication Publication Date Title
CN105097444B (zh) 硅晶片的制造方法及硅晶片
JP6312976B2 (ja) 半導体ウェーハの製造方法
TWI585840B (zh) Manufacturing method of semiconductor wafers
JP5557506B2 (ja) 半導体ウェーハの両面をポリッシングする方法
TWI498954B (zh) 磊晶矽晶圓的製造方法
CN106064326A (zh) 一种用于锑化镓单晶片的抛光方法
CN104952701B (zh) 一种异形半导体晶片及其制备方法
US10347481B2 (en) Silicon carbide wafer and method for production thereof
JP6327329B1 (ja) シリコンウェーハの研磨方法およびシリコンウェーハの製造方法
JP6027346B2 (ja) 半導体ウェーハの製造方法
US10600634B2 (en) Semiconductor substrate polishing methods with dynamic control
JP2007204286A (ja) エピタキシャルウェーハの製造方法
TWI864151B (zh) 研磨液、研磨方法及半導體零件的製造方法
CN108807138A (zh) 硅晶圆及其制造方法
TW553806B (en) Method and device for polishing semiconductor wafer
US20150357180A1 (en) Methods for cleaning semiconductor substrates
JPWO2001015860A1 (ja) 半導体ウエーハ用研磨布及び研磨方法
JP6610526B2 (ja) シリコンウェーハの枚葉式片面研磨方法
TWI614089B (zh) 半導體基板的保護膜形成方法
US20090203212A1 (en) Surface Grinding Method and Manufacturing Method for Semiconductor Wafer
JP6683277B1 (ja) 半導体ウェーハの厚み測定方法及び半導体ウェーハの両面研磨装置
CN116387138B (zh) 磨片与腐蚀结合提高硅片正背面平坦度的工艺
CN116387138A (zh) 磨片与腐蚀结合提高硅片正背面平坦度的工艺

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant