JP6311446B2 - シリコンウェーハの製造方法 - Google Patents

シリコンウェーハの製造方法 Download PDF

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Publication number
JP6311446B2
JP6311446B2 JP2014103609A JP2014103609A JP6311446B2 JP 6311446 B2 JP6311446 B2 JP 6311446B2 JP 2014103609 A JP2014103609 A JP 2014103609A JP 2014103609 A JP2014103609 A JP 2014103609A JP 6311446 B2 JP6311446 B2 JP 6311446B2
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Japan
Prior art keywords
cleaning
silicon wafer
polishing
wafer
haze
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JP2014103609A
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English (en)
Japanese (ja)
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JP2015220370A5 (https=
JP2015220370A (ja
Inventor
勝久 杉森
勝久 杉森
和明 小佐々
和明 小佐々
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Sumco Corp
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Sumco Corp
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Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2014103609A priority Critical patent/JP6311446B2/ja
Priority to TW104101629A priority patent/TWI553722B/zh
Priority to CN201510171396.0A priority patent/CN105097444B/zh
Publication of JP2015220370A publication Critical patent/JP2015220370A/ja
Publication of JP2015220370A5 publication Critical patent/JP2015220370A5/ja
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Publication of JP6311446B2 publication Critical patent/JP6311446B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2014103609A 2014-05-19 2014-05-19 シリコンウェーハの製造方法 Active JP6311446B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014103609A JP6311446B2 (ja) 2014-05-19 2014-05-19 シリコンウェーハの製造方法
TW104101629A TWI553722B (zh) 2014-05-19 2015-01-19 Silicon wafer manufacturing method and silicon wafer
CN201510171396.0A CN105097444B (zh) 2014-05-19 2015-04-13 硅晶片的制造方法及硅晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014103609A JP6311446B2 (ja) 2014-05-19 2014-05-19 シリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2015220370A JP2015220370A (ja) 2015-12-07
JP2015220370A5 JP2015220370A5 (https=) 2016-06-02
JP6311446B2 true JP6311446B2 (ja) 2018-04-18

Family

ID=54577621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014103609A Active JP6311446B2 (ja) 2014-05-19 2014-05-19 シリコンウェーハの製造方法

Country Status (3)

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JP (1) JP6311446B2 (https=)
CN (1) CN105097444B (https=)
TW (1) TWI553722B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6432497B2 (ja) * 2015-12-10 2018-12-05 信越半導体株式会社 研磨方法
JP6641197B2 (ja) 2016-03-10 2020-02-05 株式会社荏原製作所 基板の研磨装置および研磨方法
JP7327974B2 (ja) * 2019-04-01 2023-08-16 株式会社ディスコ ウェーハの分割方法
JP7556426B1 (ja) * 2023-05-30 2024-09-26 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ
CN116852183B (zh) * 2023-08-02 2024-04-02 山东有研半导体材料有限公司 一种用于大型晶圆研磨机改善晶圆形貌的研磨工艺
CN117161839B (zh) * 2023-11-01 2024-02-06 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法
CN117549184A (zh) * 2023-11-14 2024-02-13 苏州芯动利半导体科技有限公司 一种碳化硅晶圆研磨抛光工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法
JP2000315635A (ja) * 1999-04-30 2000-11-14 Mitsubishi Materials Silicon Corp 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法
JP2004291150A (ja) * 2003-03-27 2004-10-21 Tungaloy Corp 立方晶窒化硼素焼結体回転工具
JP4683233B2 (ja) * 2004-09-30 2011-05-18 信越半導体株式会社 半導体ウェーハの製造方法
JP4661784B2 (ja) * 2004-09-30 2011-03-30 信越半導体株式会社 Ｓｏｉウエーハの洗浄方法
KR101391029B1 (ko) * 2006-09-06 2014-04-30 니타 하스 인코포레이티드 연마 패드
JP2009252413A (ja) * 2008-04-02 2009-10-29 Kobe Steel Ltd 電子線源
US20110300776A1 (en) * 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
JP2012001798A (ja) * 2010-06-21 2012-01-05 Yokogawa Electric Corp 電解装置用電極の製造方法
US20130095660A1 (en) * 2010-07-02 2013-04-18 Sumco Corporation Method for polishing silicon wafer

Also Published As

Publication number Publication date
CN105097444B (zh) 2018-11-23
CN105097444A (zh) 2015-11-25
TW201545222A (zh) 2015-12-01
JP2015220370A (ja) 2015-12-07
TWI553722B (zh) 2016-10-11

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