TWI544671B - 電流適應性經改良之具磁性結構之有機發光二極體 - Google Patents
電流適應性經改良之具磁性結構之有機發光二極體 Download PDFInfo
- Publication number
- TWI544671B TWI544671B TW099139239A TW99139239A TWI544671B TW I544671 B TWI544671 B TW I544671B TW 099139239 A TW099139239 A TW 099139239A TW 99139239 A TW99139239 A TW 99139239A TW I544671 B TWI544671 B TW I544671B
- Authority
- TW
- Taiwan
- Prior art keywords
- film layer
- cathode
- nickel
- iron
- layer
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 157
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000696 magnetic material Substances 0.000 claims description 22
- 239000012044 organic layer Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- -1 manganese (tetracyano-p-dioxane) Chemical compound 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 239000011572 manganese Substances 0.000 claims description 14
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- ZYQHAXROJBXMOB-UHFFFAOYSA-N [Cr].[In] Chemical compound [Cr].[In] ZYQHAXROJBXMOB-UHFFFAOYSA-N 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/841—Applying alternating current [AC] during manufacturing or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/621,817 US8188463B2 (en) | 2009-11-19 | 2009-11-19 | Organic light emitting diode with magnetic structure for improved current adaptability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201138175A TW201138175A (en) | 2011-11-01 |
| TWI544671B true TWI544671B (zh) | 2016-08-01 |
Family
ID=43242723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099139239A TWI544671B (zh) | 2009-11-19 | 2010-11-15 | 電流適應性經改良之具磁性結構之有機發光二極體 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8188463B2 (enExample) |
| EP (1) | EP2502290B1 (enExample) |
| JP (1) | JP5642801B2 (enExample) |
| KR (1) | KR101811460B1 (enExample) |
| CN (1) | CN102598347B (enExample) |
| TW (1) | TWI544671B (enExample) |
| WO (1) | WO2011062706A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4611417B2 (ja) * | 2007-12-26 | 2011-01-12 | 株式会社神戸製鋼所 | 反射電極、表示デバイス、および表示デバイスの製造方法 |
| KR101397109B1 (ko) * | 2010-04-13 | 2014-05-19 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
| US8884502B2 (en) | 2011-07-25 | 2014-11-11 | General Electric Company | OLED assembly and luminaire with removable diffuser |
| KR101908546B1 (ko) | 2012-04-27 | 2018-10-17 | 엘지이노텍 주식회사 | 발광소자 |
| US9671838B2 (en) * | 2013-01-10 | 2017-06-06 | Dell Products L.P. | Composite chassis for lowering surface temperature |
| KR101458690B1 (ko) * | 2013-02-28 | 2014-11-05 | 포항공과대학교 산학협력단 | 전도성 박막 및 이를 포함한 전자 소자 |
| KR101392101B1 (ko) | 2013-02-28 | 2014-05-07 | 포항공과대학교 산학협력단 | 전도성 박막, 이의 제조 방법 및 이를 포함한 전자 소자 |
| KR101662202B1 (ko) * | 2013-10-01 | 2016-10-04 | 광주과학기술원 | 발광 다이오드 |
| KR102172481B1 (ko) * | 2014-01-29 | 2020-11-02 | 한국과학기술원 | 일함수 조절이 가능한 그래핀 배리스터를 포함하는 반도체 소자 |
| US9865660B2 (en) * | 2014-08-25 | 2018-01-09 | University Of Iowa Research Foundation | Organic magnetoelectroluminescence for transduction between magnetic and optical information |
| KR101647309B1 (ko) * | 2015-02-25 | 2016-08-10 | 광주과학기술원 | 유기발광다이오드 및 이의 제조방법 |
| CN110797449A (zh) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | 一种led封装及其封装方法 |
| KR102392914B1 (ko) * | 2020-08-24 | 2022-04-29 | 고려대학교 산학협력단 | 유기발광소자용 전극 및 그 전극을 포함하는 유기발광소자 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04363896A (ja) * | 1991-06-07 | 1992-12-16 | Nec Corp | 有機薄膜ｅｌ素子とその製造方法 |
| JPH1154287A (ja) * | 1997-08-07 | 1999-02-26 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
| JP2000164364A (ja) | 1998-11-27 | 2000-06-16 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造方法 |
| US6566808B1 (en) | 1999-12-22 | 2003-05-20 | General Electric Company | Luminescent display and method of making |
| JP2002319485A (ja) * | 2001-04-23 | 2002-10-31 | Nisshin Steel Co Ltd | 有機ｅｌ素子用封止部材 |
| JP4046279B2 (ja) | 2003-01-22 | 2008-02-13 | デンヨー株式会社 | バルーン型投光機 |
| JP2004227979A (ja) * | 2003-01-24 | 2004-08-12 | Denso Corp | 有機ｅｌ素子およびその製造方法 |
| JP2004296224A (ja) * | 2003-03-26 | 2004-10-21 | National Institute Of Advanced Industrial & Technology | 発光素子 |
| JP2004346082A (ja) * | 2003-09-16 | 2004-12-09 | Tetsuya Nishio | 第３級アミン化合物およびそれを使用した有機半導体装置 |
| US7270854B2 (en) * | 2003-11-19 | 2007-09-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method for forming a head having improved spin valve properties |
| CN101536608B (zh) * | 2006-09-07 | 2015-12-09 | 法国圣-戈班玻璃公司 | 用于有机发光装置的基板、其用途和制备方法，以及有机发光装置 |
| EP2090139A2 (fr) * | 2006-11-17 | 2009-08-19 | Saint-Gobain Glass France | Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant |
| US7498603B2 (en) | 2006-12-06 | 2009-03-03 | General Electric Company | Color tunable illumination source and method for controlled illumination |
| US8188673B2 (en) * | 2007-01-22 | 2012-05-29 | Koninklijke Philips Electronics N.V. | Organic light emitting diode arrangement |
| KR101323394B1 (ko) | 2007-09-12 | 2013-10-29 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
| US20090159677A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Contactless power and data transfer system and method |
| JP4611417B2 (ja) | 2007-12-26 | 2011-01-12 | 株式会社神戸製鋼所 | 反射電極、表示デバイス、および表示デバイスの製造方法 |
| US7928463B2 (en) * | 2008-01-11 | 2011-04-19 | Industrial Technology Research Institute | Light emitting device |
| US7906786B2 (en) * | 2008-01-11 | 2011-03-15 | Industrial Technology Research Institute | Light emitting device |
| JP2009283296A (ja) * | 2008-05-22 | 2009-12-03 | Canon Inc | 有機ｅｌ表示装置 |
| EP2374121B1 (en) * | 2008-12-05 | 2019-09-04 | Beijing Xiaomi Mobile Software Co., Ltd. | Oled with integrated delay structure |
| US8450926B2 (en) * | 2009-05-21 | 2013-05-28 | General Electric Company | OLED lighting devices including electrodes with magnetic material |
-
2009
- 2009-11-19 US US12/621,817 patent/US8188463B2/en active Active
-
2010
- 2010-10-12 KR KR1020127015687A patent/KR101811460B1/ko active Active
- 2010-10-12 CN CN201080052373.3A patent/CN102598347B/zh active Active
- 2010-10-12 WO PCT/US2010/052295 patent/WO2011062706A1/en not_active Ceased
- 2010-10-12 JP JP2012539911A patent/JP5642801B2/ja active Active
- 2010-10-12 EP EP10768155.3A patent/EP2502290B1/en active Active
- 2010-11-15 TW TW099139239A patent/TWI544671B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5642801B2 (ja) | 2014-12-17 |
| US20110114924A1 (en) | 2011-05-19 |
| JP2013511808A (ja) | 2013-04-04 |
| WO2011062706A1 (en) | 2011-05-26 |
| CN102598347A (zh) | 2012-07-18 |
| CN102598347B (zh) | 2015-07-08 |
| TW201138175A (en) | 2011-11-01 |
| EP2502290A1 (en) | 2012-09-26 |
| KR20120095992A (ko) | 2012-08-29 |
| EP2502290B1 (en) | 2020-06-17 |
| KR101811460B1 (ko) | 2017-12-21 |
| US8188463B2 (en) | 2012-05-29 |
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