JP5642801B2 - 電流適応性の改善のための磁気構造を備える有機発光ダイオード - Google Patents

電流適応性の改善のための磁気構造を備える有機発光ダイオード Download PDF

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JP5642801B2
JP5642801B2 JP2012539911A JP2012539911A JP5642801B2 JP 5642801 B2 JP5642801 B2 JP 5642801B2 JP 2012539911 A JP2012539911 A JP 2012539911A JP 2012539911 A JP2012539911 A JP 2012539911A JP 5642801 B2 JP5642801 B2 JP 5642801B2
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organic light
emitting device
light emitting
cathode
layer
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Japanese (ja)
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JP2013511808A (ja
JP2013511808A5 (enExample
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オーロングゼブ，ディーダー
コストカ，ジェームズ・マイケル
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/841—Applying alternating current [AC] during manufacturing or treatment

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012539911A 2009-11-19 2010-10-12 電流適応性の改善のための磁気構造を備える有機発光ダイオード Active JP5642801B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/621,817 US8188463B2 (en) 2009-11-19 2009-11-19 Organic light emitting diode with magnetic structure for improved current adaptability
US12/621,817 2009-11-19
PCT/US2010/052295 WO2011062706A1 (en) 2009-11-19 2010-10-12 Organic light emitting diode with magnetic structure for improved current adaptability

Publications (3)

Publication Number Publication Date
JP2013511808A JP2013511808A (ja) 2013-04-04
JP2013511808A5 JP2013511808A5 (enExample) 2013-11-21
JP5642801B2 true JP5642801B2 (ja) 2014-12-17

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JP2012539911A Active JP5642801B2 (ja) 2009-11-19 2010-10-12 電流適応性の改善のための磁気構造を備える有機発光ダイオード

Country Status (7)

Country Link
US (1) US8188463B2 (enExample)
EP (1) EP2502290B1 (enExample)
JP (1) JP5642801B2 (enExample)
KR (1) KR101811460B1 (enExample)
CN (1) CN102598347B (enExample)
TW (1) TWI544671B (enExample)
WO (1) WO2011062706A1 (enExample)

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KR101397109B1 (ko) * 2010-04-13 2014-05-19 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
US8884502B2 (en) 2011-07-25 2014-11-11 General Electric Company OLED assembly and luminaire with removable diffuser
KR101908546B1 (ko) 2012-04-27 2018-10-17 엘지이노텍 주식회사 발광소자
US9671838B2 (en) * 2013-01-10 2017-06-06 Dell Products L.P. Composite chassis for lowering surface temperature
KR101458690B1 (ko) * 2013-02-28 2014-11-05 포항공과대학교 산학협력단 전도성 박막 및 이를 포함한 전자 소자
KR101392101B1 (ko) 2013-02-28 2014-05-07 포항공과대학교 산학협력단 전도성 박막, 이의 제조 방법 및 이를 포함한 전자 소자
KR101662202B1 (ko) * 2013-10-01 2016-10-04 광주과학기술원 발광 다이오드
KR102172481B1 (ko) * 2014-01-29 2020-11-02 한국과학기술원 일함수 조절이 가능한 그래핀 배리스터를 포함하는 반도체 소자
US9865660B2 (en) * 2014-08-25 2018-01-09 University Of Iowa Research Foundation Organic magnetoelectroluminescence for transduction between magnetic and optical information
KR101647309B1 (ko) * 2015-02-25 2016-08-10 광주과학기술원 유기발광다이오드 및 이의 제조방법
CN110797449A (zh) * 2019-11-05 2020-02-14 鸿利智汇集团股份有限公司 一种led封装及其封装方法
KR102392914B1 (ko) * 2020-08-24 2022-04-29 고려대학교 산학협력단 유기발광소자용 전극 및 그 전극을 포함하는 유기발광소자

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JPH04363896A (ja) * 1991-06-07 1992-12-16 Nec Corp 有機薄膜ｅｌ素子とその製造方法
JPH1154287A (ja) * 1997-08-07 1999-02-26 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
JP2000164364A (ja) 1998-11-27 2000-06-16 Sharp Corp 有機エレクトロルミネッセンス素子とその製造方法
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EP2090139A2 (fr) * 2006-11-17 2009-08-19 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
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Also Published As

Publication number Publication date
US20110114924A1 (en) 2011-05-19
JP2013511808A (ja) 2013-04-04
WO2011062706A1 (en) 2011-05-26
TWI544671B (zh) 2016-08-01
CN102598347A (zh) 2012-07-18
CN102598347B (zh) 2015-07-08
TW201138175A (en) 2011-11-01
EP2502290A1 (en) 2012-09-26
KR20120095992A (ko) 2012-08-29
EP2502290B1 (en) 2020-06-17
KR101811460B1 (ko) 2017-12-21
US8188463B2 (en) 2012-05-29

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