TWI529787B - 以水蒸氣或蒸汽處理基材之方法 - Google Patents

以水蒸氣或蒸汽處理基材之方法 Download PDF

Info

Publication number
TWI529787B
TWI529787B TW097118211A TW97118211A TWI529787B TW I529787 B TWI529787 B TW I529787B TW 097118211 A TW097118211 A TW 097118211A TW 97118211 A TW97118211 A TW 97118211A TW I529787 B TWI529787 B TW I529787B
Authority
TW
Taiwan
Prior art keywords
water vapor
sulfuric acid
substrate
composition
liquid
Prior art date
Application number
TW097118211A
Other languages
English (en)
Chinese (zh)
Other versions
TW200903604A (en
Inventor
巴特包 傑佛瑞Ｗ
威廉森 理察Ｅ
迪奎克 大衛
Original Assignee
東京電子Ｆｓｉ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京電子Ｆｓｉ股份有限公司 filed Critical 東京電子Ｆｓｉ股份有限公司
Publication of TW200903604A publication Critical patent/TW200903604A/zh
Application granted granted Critical
Publication of TWI529787B publication Critical patent/TWI529787B/zh

Links

Classifications

    • H10P50/287—
    • H10P50/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H10P72/0424—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097118211A 2007-05-18 2008-05-16 以水蒸氣或蒸汽處理基材之方法 TWI529787B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93072007P 2007-05-18 2007-05-18
US12/152,641 US7819984B2 (en) 2007-05-18 2008-05-15 Process for treatment of substrates with water vapor or steam

Publications (2)

Publication Number Publication Date
TW200903604A TW200903604A (en) 2009-01-16
TWI529787B true TWI529787B (zh) 2016-04-11

Family

ID=39730708

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097118211A TWI529787B (zh) 2007-05-18 2008-05-16 以水蒸氣或蒸汽處理基材之方法

Country Status (6)

Country Link
US (2) US7819984B2 (OSRAM)
JP (2) JP5199339B2 (OSRAM)
KR (2) KR101532224B1 (OSRAM)
CN (2) CN101681827A (OSRAM)
TW (1) TWI529787B (OSRAM)
WO (1) WO2008143909A1 (OSRAM)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4692785B2 (ja) 2005-04-01 2011-06-01 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
JP4728402B2 (ja) 2005-11-23 2011-07-20 エフエスアイ インターナショナル インコーポレーテッド 支持体から物質を除去する方法
JP2009543338A (ja) 2006-07-07 2009-12-03 エフエスアイ インターナショナル インコーポレーテッド １つ以上の処理流体によりマイクロエレクトロニクス半製品を処理するために用いられる道具において使われる隔壁構造およびノズル装置
DE102007030957A1 (de) * 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
KR101060664B1 (ko) 2007-08-07 2011-08-31 에프에스아이 인터내쇼날 인크. 하나 이상의 처리유체로 전자소자를 처리하는 장비의 배리어 판 및 벤튜리 시스템의 세정방법 및 관련 장치
KR20110005699A (ko) 2008-05-09 2011-01-18 에프에스아이 인터내쇼날 인크. 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
US20100124410A1 (en) * 2008-11-18 2010-05-20 Fsi International, Inc. System for supplying water vapor in semiconductor wafer treatment
US20100155026A1 (en) * 2008-12-19 2010-06-24 Walther Steven R Condensible gas cooling system
EA021742B1 (ru) * 2009-08-19 2015-08-31 Юнилевер Н.В. Способ очистки твердых поверхностей
CN102481603B (zh) 2009-08-19 2016-08-17 荷兰联合利华有限公司 清洁基质的装置
JP5066152B2 (ja) * 2009-09-25 2012-11-07 株式会社東芝 洗浄システム
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
SG181642A1 (en) * 2009-12-11 2012-07-30 Advanced Tech Materials Removal of masking material
US20110259376A1 (en) * 2010-04-27 2011-10-27 Wagener Thomas J Wet processing of microelectronic substrates with controlled mixing of fluids proximal to substrate surfaces
JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN102466988B (zh) * 2010-11-03 2014-05-07 中国科学院微电子研究所 高温水蒸气和水混合射流清洗系统及方法
JP2012129496A (ja) * 2010-11-22 2012-07-05 Tokyo Electron Ltd 液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置
US8709165B2 (en) * 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
US9691628B2 (en) * 2010-12-10 2017-06-27 Tel Fsi, Inc. Process for silicon nitride removal selective to SiGex
US9299570B2 (en) * 2010-12-10 2016-03-29 Tel Fsi, Inc. Process for silicon nitride removal selective to SiGex
US9059104B2 (en) 2010-12-10 2015-06-16 Tel Fsi, Inc. Process for selectively removing nitride from substrates
US8742532B2 (en) * 2010-12-13 2014-06-03 Tp Solar, Inc. Dopant applicator system and method of applying vaporized doping compositions to PV solar wafers
US20120145201A1 (en) * 2010-12-13 2012-06-14 Chang-Hsin Wu Spin rinse dry apparatus and method of processing a wafer using the same
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
TWI419222B (zh) * 2011-05-05 2013-12-11 Lextar Electronics Corp 下蠟製程
CN102319699A (zh) * 2011-06-29 2012-01-18 彩虹（佛山）平板显示有限公司 一种tft基板的清洗装置
US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
JP5837787B2 (ja) * 2011-09-28 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
CN103163745B (zh) * 2011-12-15 2015-09-02 中芯国际集成电路制造(上海)有限公司 光刻胶层的去除方法、晶体管的形成方法
JP6024272B2 (ja) * 2011-12-22 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8940103B2 (en) 2012-03-06 2015-01-27 Tokyo Electron Limited Sequential stage mixing for single substrate strip processing
US9075318B2 (en) 2012-03-07 2015-07-07 Tokyo Electron Limited Sequential stage mixing for a resist batch strip process
CN103324032B (zh) * 2012-03-22 2015-07-22 上海微电子装备有限公司 一种多面体主基板及其制造方法和加工方法
CN104487900B (zh) * 2012-05-18 2019-07-23 恩特格里斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
US20130319465A1 (en) * 2012-06-03 2013-12-05 Tokyo Electron Limited Method and system for rapid mixing of process chemicals using an injection nozzle
JP5832397B2 (ja) 2012-06-22 2015-12-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6168271B2 (ja) 2012-08-08 2017-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
US9513556B2 (en) 2012-11-19 2016-12-06 Tokyo Electron Limited Method and system of process chemical temperature control using an injection nozzle
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
US8871108B2 (en) 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9117760B2 (en) * 2013-01-30 2015-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for energized and pressurized liquids for cleaning/etching applications in semiconductor manufacturing
WO2014182418A1 (en) * 2013-05-08 2014-11-13 Tel Fsi, Inc. Process comprising water vapor for haze elimination and residue removal
US10464107B2 (en) 2013-10-24 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
CN105722612A (zh) * 2013-11-13 2016-06-29 东京毅力科创Fsi公司 当利用酸化学物质制造微电子器件及前体时改进的室清洗
US20160284535A1 (en) * 2015-03-27 2016-09-29 Tel Fsi, Inc. Method for wet stripping silicon-containing organic layers
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
GB201815163D0 (en) 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7713834B2 (ja) * 2020-10-09 2025-07-28 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7738433B2 (ja) * 2020-10-09 2025-09-12 東京エレクトロン株式会社 基板処理装置
CN112599458A (zh) * 2021-03-03 2021-04-02 西安奕斯伟硅片技术有限公司 硅片刻蚀装置和方法
JP7675540B2 (ja) * 2021-03-17 2025-05-13 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7638138B2 (ja) * 2021-04-20 2025-03-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN113471108B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 一种基于马兰戈尼效应的晶圆竖直旋转处理装置
JP2023087757A (ja) * 2021-12-14 2023-06-26 東京エレクトロン株式会社 ノズル、基板処理装置および基板処理方法
JP2024011170A (ja) * 2022-07-14 2024-01-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN114935880A (zh) * 2022-07-25 2022-08-23 合肥晶合集成电路股份有限公司 一种光阻的去除方法和装置
CN120770065A (zh) * 2023-02-27 2025-10-10 株式会社斯库林集团 基板处理装置及基板处理方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001383A (en) * 1971-08-12 1977-01-04 Stauffer Chemical Company Impure sulfuric acid treatment process
SU865975A1 (ru) 1980-01-30 1981-09-23 Уральский научно-исследовательский институт трубной промышленности Способ травлени стальных изделий
US4778536A (en) * 1985-06-13 1988-10-18 Purusar Corporation Sulfur trioxide vapor phase stripping
US5037506A (en) 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
JP3377294B2 (ja) * 1994-06-03 2003-02-17 大日本スクリーン製造株式会社 基板表面処理方法及び装置
JP3690619B2 (ja) 1996-01-12 2005-08-31 忠弘 大見 洗浄方法及び洗浄装置
US5785875A (en) 1996-02-13 1998-07-28 Micron Technology, Inc. Photoresist removal process using heated solvent vapor
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
AU3578597A (en) 1996-06-25 1998-01-14 Cfm Technologies, Inc. Improved method for sulfuric acid resist stripping
US5861064A (en) 1997-03-17 1999-01-19 Fsi Int Inc Process for enhanced photoresist removal in conjunction with various methods and chemistries
US6869487B1 (en) 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7163588B2 (en) 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6231775B1 (en) 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US6146469A (en) 1998-02-25 2000-11-14 Gamma Precision Technology Apparatus and method for cleaning semiconductor wafers
AU3360399A (en) 1998-03-30 1999-10-18 Leisa B. Davenhall Composition and method for removing photoresist materials from electronic components
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6274506B1 (en) 1999-05-14 2001-08-14 Fsi International, Inc. Apparatus and method for dispensing processing fluid toward a substrate surface
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
JP2001077069A (ja) * 1999-06-30 2001-03-23 Sony Corp 基板処理方法及び基板処理装置
NL1012895C2 (nl) * 1999-07-22 2001-01-23 Innocleaning Concepts Holding Werkwijze en inrichting voor het verwijderen van vuil met behulp van stoom en reinigingsmiddel.
US6610168B1 (en) 1999-08-12 2003-08-26 Sipec Corporation Resist film removal apparatus and resist film removal method
US6689284B1 (en) 1999-09-29 2004-02-10 Kabushiki Kaisha Toshiba Surface treating method
US7364625B2 (en) 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US20020063169A1 (en) * 2000-06-26 2002-05-30 Applied Materials, Inc. Wafer spray configurations for a single wafer processing apparatus
US6418945B1 (en) 2000-07-07 2002-07-16 Semitool, Inc. Dual cassette centrifugal processor
US7479205B2 (en) * 2000-09-22 2009-01-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6451118B1 (en) 2000-11-14 2002-09-17 Anon, Inc. Cluster tool architecture for sulfur trioxide processing
US6584989B2 (en) 2001-04-17 2003-07-01 International Business Machines Corporation Apparatus and method for wet cleaning
US6867148B2 (en) 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
US6598805B2 (en) * 2001-05-30 2003-07-29 Dainippon Screen Mfg. Co., Ltd Substrate cleaning apparatus
JP4942263B2 (ja) 2001-08-31 2012-05-30 ラムリサーチ株式会社 洗浄装置
US20030190870A1 (en) 2002-04-03 2003-10-09 Applied Materials, Inc. Cleaning ceramic surfaces
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
KR100499781B1 (ko) 2002-11-25 2005-07-07 현대모비스 주식회사 버스의 시트구조
US6770424B2 (en) * 2002-12-16 2004-08-03 Asml Holding N.V. Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms
US6908565B2 (en) 2002-12-24 2005-06-21 Intel Corporation Etch thinning techniques for wafer-to-wafer vertical stacks
JP2004351321A (ja) * 2003-05-29 2004-12-16 Regal Joint Co Ltd 液体噴射装置
US7422031B2 (en) 2004-03-12 2008-09-09 Fsi International, Inc. Rotary unions, fluid delivery systems, and related methods
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
TW200608453A (en) * 2004-08-20 2006-03-01 Aqua Science Corp Object treating device and method
JP4542448B2 (ja) * 2005-03-07 2010-09-15 株式会社フューチャービジョン レジスト剥離除去装置
JP2007201070A (ja) * 2006-01-25 2007-08-09 Sharp Manufacturing System Corp 基板上の残留有機物の除去方法とその装置
US20070227556A1 (en) * 2006-04-04 2007-10-04 Bergman Eric J Methods for removing photoresist
US7737010B2 (en) 2006-04-14 2010-06-15 Micron Technology, Inc. Method of photoresist strip for plasma doping process of semiconductor manufacturing
JP2009543338A (ja) 2006-07-07 2009-12-03 エフエスアイ インターナショナル インコーポレーテッド １つ以上の処理流体によりマイクロエレクトロニクス半製品を処理するために用いられる道具において使われる隔壁構造およびノズル装置
JP2008085231A (ja) * 2006-09-28 2008-04-10 Sharp Manufacturing System Corp 基板上の残留有機物除去方法

Also Published As

Publication number Publication date
TW200903604A (en) 2009-01-16
WO2008143909A1 (en) 2008-11-27
JP2010528459A (ja) 2010-08-19
KR20100017272A (ko) 2010-02-16
CN102623328B (zh) 2014-11-26
KR101532224B1 (ko) 2015-06-30
US8920577B2 (en) 2014-12-30
JP5249462B2 (ja) 2013-07-31
JP2013058790A (ja) 2013-03-28
CN102623328A (zh) 2012-08-01
KR101282714B1 (ko) 2013-07-05
CN101681827A (zh) 2010-03-24
US7819984B2 (en) 2010-10-26
US20080283090A1 (en) 2008-11-20
KR20120092722A (ko) 2012-08-21
US20100326477A1 (en) 2010-12-30
JP5199339B2 (ja) 2013-05-15

Similar Documents

Publication Publication Date Title
TWI529787B (zh) 以水蒸氣或蒸汽處理基材之方法
CN101312794B (zh) 从基材上除去材料的方法
US9059104B2 (en) Process for selectively removing nitride from substrates
US20230352321A1 (en) Wet processing of microelectronic substrates with controlled mixing of fluids proximal to substrate surfaces
KR102156457B1 (ko) 기판으로부터 탄소 재료를 제거하기 위한 프로세스
US9691628B2 (en) Process for silicon nitride removal selective to SiGex
US9299570B2 (en) Process for silicon nitride removal selective to SiGex