TWI419222B - 下蠟製程 - Google Patents

下蠟製程 Download PDF

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Publication number
TWI419222B
TWI419222B TW100115718A TW100115718A TWI419222B TW I419222 B TWI419222 B TW I419222B TW 100115718 A TW100115718 A TW 100115718A TW 100115718 A TW100115718 A TW 100115718A TW I419222 B TWI419222 B TW I419222B
Authority
TW
Taiwan
Prior art keywords
carrier
wafer
wax
wax layer
layer
Prior art date
Application number
TW100115718A
Other languages
English (en)
Other versions
TW201246336A (en
Inventor
Chi Chung Chao
Hsiao Heng Ho
Hwan Long Yang
Original Assignee
Lextar Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW100115718A priority Critical patent/TWI419222B/zh
Publication of TW201246336A publication Critical patent/TW201246336A/zh
Application granted granted Critical
Publication of TWI419222B publication Critical patent/TWI419222B/zh

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Claims (10)

  1. 一種下蠟製程，包括：提供一晶圓，係以一蠟層固定於一載盤上；施加一蒸汽至該晶圓以融化該蠟層；以及自該載盤上取下該晶圓。
  2. 如申請專利範圍第1項所述之下蠟製程，當施加一蒸汽至該晶圓以融化該蠟層時，該蒸汽溫度大於或等於該蠟層融化溫度。
  3. 如申請專利範圍第1項所述之下蠟製程，更包括一加熱板位於該載盤下以加熱融化該蠟層，且該載盤包括一導熱陶瓷。
  4. 如申請專利範圍第1項所述之下蠟製程，在自該載盤上取下該晶圓之步驟後，更包括去除殘留於該晶圓下表面與該載盤上表面殘留的該蠟層。
  5. 一種下蠟製程，包括：提供一晶圓，係以一蠟層固定於一載盤上；融化該蠟層；以及自該載盤上取下該晶圓，其中該載盤具有多個穿孔。
  6. 如申請專利範圍第5項所述之下蠟製程，其中融化該蠟層的步驟包括施加一蒸汽至該晶圓、一加熱板於該載盤之下、或上述之組合。
  7. 如申請專利範圍第6項所述之下蠟製程，當加一蒸汽至該晶圓以融化該蠟層時，該蒸汽溫度大於或等於該蠟層融化溫度。
  8. 如申請專利範圍第6項所述之下蠟製程，當以該加熱板於該載盤之下以加熱融化該蠟層時，該載盤包括一導熱陶瓷。
  9. 如申請專利範圍第5項所述之下蠟製程，更包括自該載盤下方施加一氣體穿過該載盤之該些穿孔。
  10. 如申請專利範圍第5項所述之下蠟製程，在自該載盤上取下該晶圓之步驟後，更包括去除殘留於該晶圓下表面與該載盤上表面殘留的該蠟層。
TW100115718A 2011-05-05 2011-05-05 下蠟製程 TWI419222B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100115718A TWI419222B (zh) 2011-05-05 2011-05-05 下蠟製程

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100115718A TWI419222B (zh) 2011-05-05 2011-05-05 下蠟製程

Publications (2)

Publication Number Publication Date
TW201246336A TW201246336A (en) 2012-11-16
TWI419222B true TWI419222B (zh) 2013-12-11

Family

ID=48094542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100115718A TWI419222B (zh) 2011-05-05 2011-05-05 下蠟製程

Country Status (1)

Country Link
TW (1) TWI419222B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110730A (ja) * 1986-10-29 1988-05-16 Hitachi Cable Ltd 半導体ウエハ−の乾燥方法
JP2008077962A (ja) * 2006-09-21 2008-04-03 Ishikawa Seiko Co Ltd ホットプレート
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam
JP2009147023A (ja) * 2007-12-12 2009-07-02 Oki Semiconductor Co Ltd 半導体基板の製造方法
JP2009265376A (ja) * 2008-04-25 2009-11-12 Shin Etsu Chem Co Ltd 光アイソレータ用積層体及び光アイソレータ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110730A (ja) * 1986-10-29 1988-05-16 Hitachi Cable Ltd 半導体ウエハ−の乾燥方法
JP2008077962A (ja) * 2006-09-21 2008-04-03 Ishikawa Seiko Co Ltd ホットプレート
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam
JP2009147023A (ja) * 2007-12-12 2009-07-02 Oki Semiconductor Co Ltd 半導体基板の製造方法
JP2009265376A (ja) * 2008-04-25 2009-11-12 Shin Etsu Chem Co Ltd 光アイソレータ用積層体及び光アイソレータ

Also Published As

Publication number Publication date
TW201246336A (en) 2012-11-16

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