TWI523142B - 用以加熱用於晶圓支撐系統之轉換層的經光學地調諧金屬化的光 - Google Patents

用以加熱用於晶圓支撐系統之轉換層的經光學地調諧金屬化的光 Download PDF

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Publication number
TWI523142B
TWI523142B TW100120252A TW100120252A TWI523142B TW I523142 B TWI523142 B TW I523142B TW 100120252 A TW100120252 A TW 100120252A TW 100120252 A TW100120252 A TW 100120252A TW I523142 B TWI523142 B TW I523142B
Authority
TW
Taiwan
Prior art keywords
layer
photothermal conversion
conversion layer
substrate
metal
Prior art date
Application number
TW100120252A
Other languages
English (en)
Chinese (zh)
Other versions
TW201222713A (en
Inventor
宏 夕恩 川恩
齊藤一太
Original Assignee
３Ｍ新設資產公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW201222713A publication Critical patent/TW201222713A/zh
Application granted granted Critical
Publication of TWI523142B publication Critical patent/TWI523142B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW100120252A 2010-06-16 2011-06-09 用以加熱用於晶圓支撐系統之轉換層的經光學地調諧金屬化的光 TWI523142B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35532410P 2010-06-16 2010-06-16

Publications (2)

Publication Number Publication Date
TW201222713A TW201222713A (en) 2012-06-01
TWI523142B true TWI523142B (zh) 2016-02-21

Family

ID=45348789

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100120252A TWI523142B (zh) 2010-06-16 2011-06-09 用以加熱用於晶圓支撐系統之轉換層的經光學地調諧金屬化的光

Country Status (5)

Country Link
US (1) US20130087959A1 (https=)
JP (1) JP2013534721A (https=)
KR (1) KR20130115208A (https=)
TW (1) TWI523142B (https=)
WO (1) WO2011159456A2 (https=)

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JP6088230B2 (ja) * 2012-12-05 2017-03-01 東京応化工業株式会社 積層体の形成方法
DE102013100711B4 (de) * 2013-01-24 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
EP2908335B1 (en) 2014-02-14 2020-04-15 ams AG Dicing method
KR20160064031A (ko) * 2014-11-27 2016-06-07 어드밴스 프로세스 인테그레이트 테크놀로지 리미티드 웨이퍼 기판을 사용하지 않는 인터포저층의 제작 방법
US10074626B2 (en) 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
JP2017224718A (ja) * 2016-06-15 2017-12-21 日本電信電話株式会社 半導体デバイスのガラス基板固定方法及び剥離方法
JP6791086B2 (ja) 2016-10-11 2020-11-25 信越化学工業株式会社 ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物
JP6614090B2 (ja) 2016-10-11 2019-12-04 信越化学工業株式会社 ウエハ積層体及びその製造方法
KR101976930B1 (ko) * 2017-06-16 2019-05-09 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자
JP7035915B2 (ja) 2018-09-03 2022-03-15 信越化学工業株式会社 薄型ウエハの製造方法
TWI844589B (zh) * 2018-11-29 2024-06-11 日商力森諾科股份有限公司 製造半導體裝置的方法、光吸收積層體及暫時固定用積層體
CN113840891B (zh) * 2019-05-22 2023-08-29 株式会社力森诺科 半导体装置的制造方法
KR102713057B1 (ko) * 2019-10-18 2024-10-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름
US11996384B2 (en) * 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
WO2022176861A1 (ja) * 2021-02-18 2022-08-25 パナソニックＩｐマネジメント株式会社 磁気スケール、磁気スケールシステム、磁気スケールの製造方法及び磁気スケールシステムの製造方法
CN117296132A (zh) * 2021-03-31 2023-12-26 美商艾德亚半导体接合科技有限公司 载体的直接接合和去接合
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
JP2025518656A (ja) 2022-06-03 2025-06-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 一時的に接合するための薄層からなる多層系
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WO2024190701A1 (ja) 2023-03-10 2024-09-19 信越化学工業株式会社 レーザー剥離組成物、積層体、及び、回路付基板加工方法

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Also Published As

Publication number Publication date
JP2013534721A (ja) 2013-09-05
WO2011159456A2 (en) 2011-12-22
TW201222713A (en) 2012-06-01
KR20130115208A (ko) 2013-10-21
US20130087959A1 (en) 2013-04-11
WO2011159456A3 (en) 2012-04-05

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