JP6791086B2 - ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 - Google Patents
ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 Download PDFInfo
- Publication number
- JP6791086B2 JP6791086B2 JP2017189703A JP2017189703A JP6791086B2 JP 6791086 B2 JP6791086 B2 JP 6791086B2 JP 2017189703 A JP2017189703 A JP 2017189703A JP 2017189703 A JP2017189703 A JP 2017189703A JP 6791086 B2 JP6791086 B2 JP 6791086B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resin
- adhesive composition
- trade name
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Oc1ccccc1 Chemical compound Oc1ccccc1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/24—Layered products comprising a layer of synthetic resin characterised by the use of special additives using solvents or swelling agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/26—Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
- C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
- C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
- C09J161/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
- C09J183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/10—Block or graft copolymers containing polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B2037/0092—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding in which absence of adhesives is explicitly presented as an advantage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B2037/1269—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives multi-component adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
- B32B2038/0016—Abrading
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/03—3 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/04—4 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/05—5 or more layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2270/00—Resin or rubber layer containing a blend of at least two different polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/414—Translucent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
1.支持体と、該支持体上に形成された接着剤層と、該接着剤層に回路面を有する表面が対向するように積層されたウエハとを備えたウエハ積層体であって、
前記接着剤層が、下記式(1)で表される繰り返し単位を含み、重量平均分子量が500〜500,000である樹脂Aと、シロキサン骨格を含む樹脂Bとを含む接着剤組成物の硬化物であるウエハ積層体。
2.前記接着剤層の波長355nmの光の透過率が、20%以下である1のウエハ積層体。
3.樹脂Bが、下記式(2)で表される繰り返し単位及び必要に応じて下記式(3)で表される繰り返し単位からなる、重量平均分子量が3,000〜500,000のフェノール変性シリコーン樹脂である1又は2のウエハ積層体。
4.前記接着剤組成物が、更に架橋剤を含む1〜3のいずれかのウエハ積層体。
5.前記接着剤組成物が、更に有機溶剤を含む1〜4のいずれかのウエハ積層体。
6.1〜5のいずれかのウエハ積層体の製造方法であって、
(a)支持体に直接接着剤組成物層を形成する工程、
(b)前記接着剤組成物層面と、ウエハの回路形成面とを減圧下に接合する工程、及び
(c)前記接着剤組成物層の熱硬化を行って接着剤層を形成する工程
を含むウエハ積層体の製造方法。
7.6の方法で得られたウエハ積層体の、ウエハの回路非形成面を研削又は研磨する工程を含む薄型ウエハの製造方法。
8.下記式(1)で表される繰り返し単位を含み、重量平均分子量が500〜500,000である樹脂と、シロキサン骨格を含む樹脂とを含む接着剤組成物。
本発明のウエハ積層体は、支持体と、該支持体上に形成された接着剤層と、該接着剤層に回路面を有する表面が対向するように積層されたウエハとを備えたウエハ積層体である。本発明のウエハ積層体の構造を具体的に説明すると、例えば、図1に示すように、支持体1とウエハ3とが接着剤層2で接合されているものである。
前記支持体としては、透明基板、シリコンウエハ、セラミック基板等が挙げられるが、支持体を剥離する際に照射するレーザーの透過性の点から、透明基板が好ましい。前記透明基板としては、通常、ガラス基板や石英基板が用いられ、その厚さは、通常300〜1,000μmが好ましく、500〜800μmがより好ましい。
前記ウエハは、通常、半導体ウエハである。該半導体ウエハの例としては、シリコンウエハ、ゲルマニウムウエハ、ガリウム−ヒ素ウエハ、ガリウム−リンウエハ、ガリウム−ヒ素−アルミニウムウエハ等が挙げられる。前記ウエハの厚さは、特に限定されないが、通常600〜800μmが好ましく、625〜775μmがより好ましい。
接着剤層(仮接着剤層)は、式(1)で表される繰り返し単位を含む樹脂Aと、シロキサン骨格を含む樹脂Bとを含む接着剤組成物を硬化してなるものである。式(1)で表される繰り返し単位は、1種のみが含まれていてもよく、2種以上が含まれていてもよい。
R4−CHO (5)
(式中、R4は、前記と同じ。)
本発明のウエハ積層体の製造方法は、下記工程(a)〜(c)を含む。
[工程(a)]
工程(a)は、支持体上又はウエハの回路形成面に接着剤組成物層を形成する工程である。接着剤層を形成するための接着剤組成物が溶液である場合は、これをスピンコート、ロールコート等の方法により支持体上に塗布し、その溶剤の揮発条件に応じて好ましくは80〜200℃、より好ましくは100〜180℃の温度でプリベークを行い、溶剤を揮発させることで、接着剤組成物層が形成される。また、接着剤組成物がフィルム状組成物である場合は、ラミネート法によって支持体上に接着剤組成物層が形成される。
工程(b)は、接着剤組成物層と支持体又はウエハの回路形成面とを減圧下に接合する工程である。減圧条件としては、好ましくは1〜100Pa、より好ましくは3〜80Paである。また、このとき、好ましくは40〜200℃、より好ましくは60〜180℃の温度領域で、減圧下、支持体又はウエハを均一に圧着し、接合させるとよい。
工程(c)は、工程(b)で接合させたウエハ積層体の接着剤組成物層の熱硬化を行って接着剤層を形成する工程である。前記ウエハ積層体が形成された後、120〜220℃、好ましくは150〜200℃で10分〜4時間、好ましくは30分〜2時間加熱することによって、熱硬化を行う。
前記方法によって得られたウエハ積層体の、ウエハの回路非形成面を研削することで、薄型ウエハを製造することができる。
[合成例1]
1,000mLのフラスコに、1,5−ジヒドロキシナフタレン80g(0.50モル)、2−ヒドロキシ−6−ナフトアルデヒド51.6g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A1を得た。樹脂A1のMwは3,200、分散度(Mw/Mn)は2.44であった。
1,000mLのフラスコに、1,5−ジヒドロキシナフタレン80g(0.50モル)、パラホルムアルデヒド9.0g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A2を得た。樹脂A2のMwは1,500、Mw/Mnは2.20であった。
1,000mLのフラスコに、2−メチルヒドロキベンゼン32.4g(0.30モル)、2−ヒドロキシ−6−ナフトアルデヒド51.6g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A3を得た。樹脂A3のMwは2,100、Mw/Mnは1.58であった。
攪拌機、温度計、窒素置換装置及び還流冷却器を具備したフラスコに、フェノール化合物(M−1)43.1g、化合物(M−2)29.5g、トルエン126g及び塩化白金酸0.04gを仕込み、80℃に昇温した。その後、化合物(M−3)11.4gを1時間かけてフラスコ内に滴下した。このとき、フラスコ内温度は、85℃まで上昇した。滴下終了後、更に80℃で2時間熟成し、次いでトルエンを留去した。得られた残渣にメチルイソブチルケトン(MIBK)200mLを添加した後、メタノール2,000mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、樹脂B1を得た。樹脂B1のMwは、45,000であった。
攪拌機、温度計、窒素置換装置及び還流冷却器を具備したフラスコに、フェノール化合物(M−1)43.1g、化合物(M−2)59g、トルエン134g及び塩化白金酸0.04gを仕込み、80℃に昇温した。その後、化合物(M−4)14.6gを1時間かけてフラスコ内に滴下した。このとき、フラスコ内温度は、83℃まで上昇した。滴下終了後、更に80℃で2時間熟成し、次いでトルエンを留去した。得られた残渣にMIBK200mLを添加した後、メタノール2,000mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、樹脂B2を得た。樹脂B2のMwは、34,000であった。
攪拌機、温度計、窒素置換装置及び還流冷却器を具備したフラスコに、フェノール化合物(M−1)43.1g、トルエン92g及び塩化白金酸0.04gを仕込み、80℃に昇温した。その後、化合物(M−4)18.5gを1時間かけてフラスコ内に滴下した。このとき、フラスコ内温度は、82℃まで上昇した。滴下終了後、更に80℃で2時間熟成し、次いでトルエンを留去した。得られた残渣にMIBK200mLを添加した後、メタノール2,000mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、樹脂B3を得た。樹脂B3のMwは、20,000であった。
攪拌機、温度計、窒素置換装置及び還流冷却器を具備したフラスコに、フェノール化合物(M−1)10.8g、トルエン123g及び塩化白金酸0.04gを仕込み、80℃に昇温した。その後、化合物(M−2)71.4gを1時間かけてフラスコ内に滴下した。このとき、フラスコ内温度は、81℃まで上昇した。滴下終了後、更に80℃で2時間熟成し、次いでトルエンを留去した。得られた残渣にMIBK200mLを添加した後、メタノール2,000mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、樹脂B4を得た。樹脂B4のMwは、25,000であった。
[調製例1〜5、比較調製例1〜3]
樹脂A1〜A3、樹脂B1〜B4を表1に示す割合で合計100gになるように混合し、架橋剤としてエポキシ架橋剤であるEOCN−1020(日本化薬(株)製)、硬化触媒としてビス(tert−ブチルスルホニル)ジアゾメタン(BSDM、和光純薬工業(株)製)、酸化防止剤としてテトラキス[メチレン−(3,5−ジ−tert−ブチル−4−ヒドロキシハイドロシンナメート)]メタン(商品名:アデカスタブAO-60)、及び溶剤としてシクロヘキサノンを下記表1の組成になるよう添加し、1μmのメンブレンフィルターで濾過して、接着剤組成物A〜Hを得た。
[実施例1〜5、比較例1〜3]
直径200mm(厚さ:500μm)のガラス板に、接着剤組成物A〜Hをスピンコート後、ホットプレートにて150℃で5分間加熱することにより、表2に示す膜厚で接着剤組成物層を成膜した。
表面に高さ10μm、直径40μmの銅ポストが全面に形成された直径200mmシリコンウエハ(厚さ:725μm)の銅ポスト面と、ガラス板上の接着剤組成物面が合わされるように、真空貼り合わせ装置(EVG社製、EVG520IS)内で0.1Pa以下の減圧条件のもと、表2に示す接合温度条件にて荷重5kNで貼り合わせ、ウエハ積層体を作製した。
その後、この接合された基板に対し、下記試験を行った。結果を表2に示す。なお、以下の順で評価を実施した。
200mmのウエハ接合は、EVG社のウエハ接合装置EVG520ISを用いて行った。接合温度は表2に記載の値、接合時のチャンバー内圧力は0.1Pa以下、荷重は5kN、時間は1分間で実施した。
接合後、一旦、180℃で1時間オーブンを用いて基板を加熱し、接着剤組成物層の硬化を実施したのち、室温まで冷却し、その後の界面の接合状況を目視及び光学顕微鏡それぞれで確認し、界面での気泡等の異常が発生しなかった場合を良好と評価して「○」で示し、異常が発生した場合を不良と評価して「×」で示した。
グラインダー((株)DISCO製、DAG810)でダイヤモンド砥石を用いてシリコンウエハの裏面研削を行った。最終基板厚50μmまでグラインドした後、光学顕微鏡(100倍)にてクラック、剥離等の異常の有無を調べた。異常が発生しなかった場合を良好と評価して「○」で示し、異常が発生した場合を不良と評価して「×」で示した。
シリコンウエハを裏面研削した後の積層体をCVD装置に導入し、2μmのSiO2膜の生成実験を行ない、その際の外観異常の有無を調べた。外観異常が発生しなかった場合を良好と評価して「○」で示し、ボイド、ウエハ膨れ、ウエハ破損等の外観異常が発生した場合を不良と評価して「×」で示した。CVD耐性試験の条件は、以下の通りである。
装置名:プラズマCVD PD270STL(サムコ(株)製)
RF500W、内圧40Pa
TEOS(テトラエチルオルソシリケート):O2=20sccm:680sccm
支持体の剥離性は、以下の方法で評価した。まず、CVD耐性試験を終えたウエハ積層体の50μmまで薄型化したウエハ側にダイシングフレームを用いてダイシングテープを貼り、このダイシングテープ面を真空吸着によって、吸着板にセットした。その後、支持体側から全面に355nmのレーザーを照射した。支持体及び50μmのウエハを割ることなく剥離できた場合を「○」で示し、割れ等の異常が発生した場合を不良と評価して「×」で示した。
接着剤層のピール剥離性は、以下の方法で評価した。まず、支持体の剥離試験を終えたウエハ積層体の接着剤層の面に剥離用テープを貼り付けた。その後、剥離用テープを引き上げ、接着剤層とウエハの界面で剥離させた。この際、50μmのウエハを割ることなく剥離でき、かつ残渣がみられない場合を「○」で示し、割れや残渣残り等の異常が発生した場合を不良と評価して「×」で示した。
シリコンウエハ上に各接着剤組成物溶液をスピンコート後、ホットプレートにて150℃で5分間加熱、180℃で1時間オーブンにて加熱することで、対応する接着剤層を表2に示す膜厚で硬化させた。
その後、前記ウエハの接着剤層上に150mm長×25mm幅のポリイミドテープを5本貼り付け、テープが張られていない部分の仮接着剤層を除去した。(株)島津製作所製のAUTOGRAPH(AG−1)を用いて300mm/分の速度でテープの一端から180°剥離で120mm剥がし、そのときにかかる力の平均(120mmストローク×5回)を、その接着剤層の剥離力とした。
各接着剤組成物溶液を、厚み500μmのガラス基板に膜厚0.3μmでスピンコート後、ホットプレートにて150℃で5分間加熱、180℃で1時間オーブンにて加熱、硬化させ、その透過率(波長355nm)を分光光度計(U-4100形、(株)日立ハイテクサイエンス製で測定した。透過率が20%以下の場合を良好として「○」で示し、20%よりも高い場合を不良として「×」で示した。
2 接着剤層
3 ウエハ
Claims (8)
- 前記接着剤層の波長355nmの光の透過率が、20%以下である請求項1記載のウエハ積層体。
- 樹脂Bが、下記式(2)で表される繰り返し単位及び必要に応じて下記式(3)で表される繰り返し単位からなる、重量平均分子量が3,000〜500,000のフェノール変性シリコーン樹脂である請求項1又は2記載のウエハ積層体。
- 前記接着剤組成物が、更に架橋剤を含む請求項1〜3のいずれか1項記載のウエハ積層体。
- 前記接着剤組成物が、更に有機溶剤を含む請求項1〜4のいずれか1項記載のウエハ積層体。
- 請求項1〜5のいずれか1項記載のウエハ積層体の製造方法であって、
(a)支持体に直接接着剤組成物層を形成する工程、
(b)前記接着剤組成物層面と、ウエハの回路形成面とを減圧下に接合する工程、及び
(c)前記接着剤組成物層の熱硬化を行って接着剤層を形成する工程
を含むウエハ積層体の製造方法。 - 請求項6記載の方法で得られたウエハ積層体の、ウエハの回路非形成面を研削又は研磨する工程を含む薄型ウエハの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016199829 | 2016-10-11 | ||
JP2016199829 | 2016-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018064092A JP2018064092A (ja) | 2018-04-19 |
JP6791086B2 true JP6791086B2 (ja) | 2020-11-25 |
Family
ID=60191094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017189703A Active JP6791086B2 (ja) | 2016-10-11 | 2017-09-29 | ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10658314B2 (ja) |
EP (1) | EP3315301B1 (ja) |
JP (1) | JP6791086B2 (ja) |
KR (1) | KR102475568B1 (ja) |
CN (1) | CN107919314B (ja) |
TW (1) | TWI738886B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6023737B2 (ja) * | 2014-03-18 | 2016-11-09 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
TWI741262B (zh) * | 2018-06-04 | 2021-10-01 | 美商帕斯馬舍門有限責任公司 | 切割晶粒附接膜的方法 |
JP7035915B2 (ja) * | 2018-09-03 | 2022-03-15 | 信越化学工業株式会社 | 薄型ウエハの製造方法 |
FR3086201B1 (fr) * | 2018-09-24 | 2020-12-25 | Commissariat Energie Atomique | Procede de decapage d’un substrat par transfert d’un film superficiel de polymere thermoplastique |
TWI724765B (zh) * | 2020-01-21 | 2021-04-11 | 達興材料股份有限公司 | 可雷射離型的組成物、其積層體和雷射離型方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2768088B2 (ja) * | 1991-10-03 | 1998-06-25 | 信越化学工業株式会社 | 熱硬化性樹脂組成物及び半導体装置 |
US5358980A (en) * | 1991-10-03 | 1994-10-25 | Shin-Etsu Chemical Company, Limited | Naphthol novolac epoxy resin compositions and semiconductor devices encapsulated therewith |
US6512031B1 (en) * | 1999-04-15 | 2003-01-28 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition, laminate film using the same, and semiconductor device |
JP2000336248A (ja) * | 1999-05-27 | 2000-12-05 | Dainippon Ink & Chem Inc | エポキシ樹脂組成物および電気積層板 |
JP2003177528A (ja) | 2001-09-21 | 2003-06-27 | Tamura Kaken Co Ltd | 感光性樹脂組成物及びプリント配線板 |
EP1494073A3 (en) | 2001-09-21 | 2005-04-06 | Tamura Kaken Corporation | Photosensitive resin composition and printed wiring board |
TWI460249B (zh) * | 2006-02-16 | 2014-11-11 | Shinetsu Chemical Co | 黏合組成物、黏合膜及製造半導體元件的方法 |
JP5183076B2 (ja) * | 2006-02-16 | 2013-04-17 | 信越化学工業株式会社 | 半導体装置の製造方法 |
US20130087959A1 (en) | 2010-06-16 | 2013-04-11 | 3M Innovative Properties Company | Opitcally tuned metalized light to heat conversion layer for wafer support system |
WO2013059451A1 (en) | 2011-10-19 | 2013-04-25 | Marvell World Trade Ltd | Systems and methods for suppressing interference in a signal received by a device having two or more antennas |
WO2013059566A1 (en) | 2011-10-20 | 2013-04-25 | Marvell World Trade Ltd. | Systems and methods for suppressing interference in a wireless communication system |
JP5958262B2 (ja) * | 2011-10-28 | 2016-07-27 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2013172033A (ja) * | 2012-02-21 | 2013-09-02 | Tokyo Ohka Kogyo Co Ltd | 分離方法及び積層構造体 |
CN102911502A (zh) * | 2012-10-19 | 2013-02-06 | 广东生益科技股份有限公司 | 氰酸酯树脂组合物及使用其制作的预浸料、层压材料与覆金属箔层压材料 |
JP6059631B2 (ja) | 2012-11-30 | 2017-01-11 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP6224509B2 (ja) * | 2013-05-14 | 2017-11-01 | 信越化学工業株式会社 | ウエハ用仮接着材料、それらを用いた仮接着用フィルム、及びウエハ加工体並びにそれらを使用した薄型ウエハの製造方法 |
KR102045519B1 (ko) | 2013-11-12 | 2019-11-18 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 실리콘 접착제 조성물 및 고체 촬상 디바이스 |
JP6130522B2 (ja) * | 2014-01-29 | 2017-05-17 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP6428082B2 (ja) * | 2014-09-16 | 2018-11-28 | 日立化成株式会社 | 熱硬化性樹脂組成物、プリプレグ、積層板及びプリント配線板 |
JP6404787B2 (ja) * | 2014-09-26 | 2018-10-17 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP6425266B2 (ja) | 2015-04-13 | 2018-11-21 | アルプス電気株式会社 | 衛生マスク |
JP6463664B2 (ja) * | 2015-11-27 | 2019-02-06 | 信越化学工業株式会社 | ウエハ加工体及びウエハ加工方法 |
US10074626B2 (en) * | 2016-06-06 | 2018-09-11 | Shin-Etsu Chemical Co., Ltd. | Wafer laminate and making method |
-
2017
- 2017-09-29 JP JP2017189703A patent/JP6791086B2/ja active Active
- 2017-10-06 TW TW106134500A patent/TWI738886B/zh active
- 2017-10-10 US US15/728,846 patent/US10658314B2/en active Active
- 2017-10-10 EP EP17195687.3A patent/EP3315301B1/en active Active
- 2017-10-10 KR KR1020170129145A patent/KR102475568B1/ko active IP Right Grant
- 2017-10-11 CN CN201710940342.5A patent/CN107919314B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN107919314A (zh) | 2018-04-17 |
JP2018064092A (ja) | 2018-04-19 |
EP3315301A1 (en) | 2018-05-02 |
KR20180040094A (ko) | 2018-04-19 |
TWI738886B (zh) | 2021-09-11 |
KR102475568B1 (ko) | 2022-12-08 |
CN107919314B (zh) | 2023-09-05 |
US20180102333A1 (en) | 2018-04-12 |
TW201829688A (zh) | 2018-08-16 |
EP3315301B1 (en) | 2024-08-07 |
US10658314B2 (en) | 2020-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6791086B2 (ja) | ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 | |
JP7035915B2 (ja) | 薄型ウエハの製造方法 | |
KR102443881B1 (ko) | 웨이퍼 적층체 및 그의 제조 방법 | |
JP6680266B2 (ja) | ウエハ積層体及びその製造方法 | |
JP6610510B2 (ja) | ウエハ積層体及びその製造方法 | |
KR102637336B1 (ko) | 반도체 장치 및 그의 제조 방법, 그리고 적층체 | |
EP3382742B1 (en) | Semiconductor device, making method, and laminate | |
KR102476071B1 (ko) | 적층체 및 그의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190823 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200727 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201006 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201019 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6791086 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |