KR20130115208A - 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 - Google Patents

웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 Download PDF

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Publication number
KR20130115208A
KR20130115208A KR1020137000781A KR20137000781A KR20130115208A KR 20130115208 A KR20130115208 A KR 20130115208A KR 1020137000781 A KR1020137000781 A KR 1020137000781A KR 20137000781 A KR20137000781 A KR 20137000781A KR 20130115208 A KR20130115208 A KR 20130115208A
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KR
South Korea
Prior art keywords
layer
conversion layer
light
metal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020137000781A
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English (en)
Korean (ko)
Inventor
헝 티 트란
가즈타 사이토
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20130115208A publication Critical patent/KR20130115208A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020137000781A 2010-06-16 2011-05-27 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 Withdrawn KR20130115208A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35532410P 2010-06-16 2010-06-16
US61/355,324 2010-06-16
PCT/US2011/038281 WO2011159456A2 (en) 2010-06-16 2011-05-27 Optically tuned metalized light to heat conversion layer for wafer support system

Publications (1)

Publication Number Publication Date
KR20130115208A true KR20130115208A (ko) 2013-10-21

Family

ID=45348789

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137000781A Withdrawn KR20130115208A (ko) 2010-06-16 2011-05-27 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층

Country Status (5)

Country Link
US (1) US20130087959A1 (https=)
JP (1) JP2013534721A (https=)
KR (1) KR20130115208A (https=)
TW (1) TWI523142B (https=)
WO (1) WO2011159456A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20180137327A (ko) * 2017-06-16 2018-12-27 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자

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JP5735774B2 (ja) * 2010-09-30 2015-06-17 芝浦メカトロニクス株式会社 保護体、基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
JP6088230B2 (ja) * 2012-12-05 2017-03-01 東京応化工業株式会社 積層体の形成方法
DE102013100711B4 (de) * 2013-01-24 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
EP2908335B1 (en) 2014-02-14 2020-04-15 ams AG Dicing method
KR20160064031A (ko) * 2014-11-27 2016-06-07 어드밴스 프로세스 인테그레이트 테크놀로지 리미티드 웨이퍼 기판을 사용하지 않는 인터포저층의 제작 방법
US10074626B2 (en) 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
JP2017224718A (ja) * 2016-06-15 2017-12-21 日本電信電話株式会社 半導体デバイスのガラス基板固定方法及び剥離方法
JP6791086B2 (ja) 2016-10-11 2020-11-25 信越化学工業株式会社 ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物
JP6614090B2 (ja) 2016-10-11 2019-12-04 信越化学工業株式会社 ウエハ積層体及びその製造方法
JP7035915B2 (ja) 2018-09-03 2022-03-15 信越化学工業株式会社 薄型ウエハの製造方法
TWI844589B (zh) * 2018-11-29 2024-06-11 日商力森諾科股份有限公司 製造半導體裝置的方法、光吸收積層體及暫時固定用積層體
CN113840891B (zh) * 2019-05-22 2023-08-29 株式会社力森诺科 半导体装置的制造方法
KR102713057B1 (ko) * 2019-10-18 2024-10-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름
US11996384B2 (en) * 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
WO2022176861A1 (ja) * 2021-02-18 2022-08-25 パナソニックＩｐマネジメント株式会社 磁気スケール、磁気スケールシステム、磁気スケールの製造方法及び磁気スケールシステムの製造方法
CN117296132A (zh) * 2021-03-31 2023-12-26 美商艾德亚半导体接合科技有限公司 载体的直接接合和去接合
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
JP2025518656A (ja) 2022-06-03 2025-06-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 一時的に接合するための薄層からなる多層系
JP7819041B2 (ja) * 2022-06-13 2026-02-24 日東電工株式会社 電子部品仮固定用粘着シート
WO2024190701A1 (ja) 2023-03-10 2024-09-19 信越化学工業株式会社 レーザー剥離組成物、積層体、及び、回路付基板加工方法

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JP2686511B2 (ja) * 1989-05-31 1997-12-08 日東電工株式会社 半導体ウエハ保護フィルムの剥離方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP2005209829A (ja) * 2004-01-22 2005-08-04 Taiyo Yuden Co Ltd 半導体ウェハ固定方法及び装置、並びに半導体ウェハが固定された構造体
JP2006013000A (ja) * 2004-06-23 2006-01-12 Sekisui Chem Co Ltd Ｉｃチップの製造方法
JP4387297B2 (ja) * 2004-12-28 2009-12-16 シャープ株式会社 メモリ素子、記録層に対する記録方法、及び記録装置
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JP4932758B2 (ja) * 2008-02-06 2012-05-16 富士フイルム株式会社 発光デバイス及びその製造方法
JP4934620B2 (ja) * 2008-03-25 2012-05-16 古河電気工業株式会社 ウエハ加工用テープ
JP5252283B2 (ja) * 2008-10-15 2013-07-31 富士電機株式会社 半導体装置の製造方法及びそのための装置
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
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Publication number Priority date Publication date Assignee Title
KR20180137327A (ko) * 2017-06-16 2018-12-27 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자

Also Published As

Publication number Publication date
JP2013534721A (ja) 2013-09-05
WO2011159456A2 (en) 2011-12-22
TW201222713A (en) 2012-06-01
US20130087959A1 (en) 2013-04-11
WO2011159456A3 (en) 2012-04-05
TWI523142B (zh) 2016-02-21

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