JP2013534721A - ウェーハ支持システム用の変換層を加熱するために光学的調整を施した金属化光 - Google Patents

ウェーハ支持システム用の変換層を加熱するために光学的調整を施した金属化光 Download PDF

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Publication number
JP2013534721A
JP2013534721A JP2013515360A JP2013515360A JP2013534721A JP 2013534721 A JP2013534721 A JP 2013534721A JP 2013515360 A JP2013515360 A JP 2013515360A JP 2013515360 A JP2013515360 A JP 2013515360A JP 2013534721 A JP2013534721 A JP 2013534721A
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Japan
Prior art keywords
layer
conversion layer
photothermal conversion
substrate
metal
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JP2013515360A
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Japanese (ja)
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JP2013534721A5 (https=
Inventor
ハン ティー． トラン，
一太 斉藤
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2013534721A publication Critical patent/JP2013534721A/ja
Publication of JP2013534721A5 publication Critical patent/JP2013534721A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2013515360A 2010-06-16 2011-05-27 ウェーハ支持システム用の変換層を加熱するために光学的調整を施した金属化光 Pending JP2013534721A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35532410P 2010-06-16 2010-06-16
US61/355,324 2010-06-16
PCT/US2011/038281 WO2011159456A2 (en) 2010-06-16 2011-05-27 Optically tuned metalized light to heat conversion layer for wafer support system

Publications (2)

Publication Number Publication Date
JP2013534721A true JP2013534721A (ja) 2013-09-05
JP2013534721A5 JP2013534721A5 (https=) 2014-07-10

Family

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Family Applications (1)

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JP2013515360A Pending JP2013534721A (ja) 2010-06-16 2011-05-27 ウェーハ支持システム用の変換層を加熱するために光学的調整を施した金属化光

Country Status (5)

Country Link
US (1) US20130087959A1 (https=)
JP (1) JP2013534721A (https=)
KR (1) KR20130115208A (https=)
TW (1) TWI523142B (https=)
WO (1) WO2011159456A2 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112618A (ja) * 2012-12-05 2014-06-19 Tokyo Ohka Kogyo Co Ltd 積層体の形成方法
JP2017224718A (ja) * 2016-06-15 2017-12-21 日本電信電話株式会社 半導体デバイスのガラス基板固定方法及び剥離方法
EP3309824A1 (en) 2016-10-11 2018-04-18 Shin-Etsu Chemical Co., Ltd. Wafer laminate and method of producing the same
KR20180040094A (ko) 2016-10-11 2018-04-19 신에쓰 가가꾸 고교 가부시끼가이샤 웨이퍼 적층체, 그의 제조 방법 및 웨이퍼 적층용 접착제 조성물
US10074626B2 (en) 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
EP3618102A2 (en) 2018-09-03 2020-03-04 Shin-Etsu Chemical Co., Ltd. Method for producing thin wafer
WO2020111193A1 (ja) * 2018-11-29 2020-06-04 日立化成株式会社 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体
JPWO2020235597A1 (https=) * 2019-05-22 2020-11-26
JP2023181886A (ja) * 2022-06-13 2023-12-25 日東電工株式会社 電子部品仮固定用粘着シート
JP2024515032A (ja) * 2021-03-31 2024-04-04 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 担体の直接接合及び剥離
WO2024190701A1 (ja) 2023-03-10 2024-09-19 信越化学工業株式会社 レーザー剥離組成物、積層体、及び、回路付基板加工方法
JP2024542558A (ja) * 2021-12-03 2024-11-15 インターナショナル・ビジネス・マシーンズ・コーポレーション レーザ剥離層を有するシリコン・ハンドラ

Families Citing this family (10)

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JP5735774B2 (ja) * 2010-09-30 2015-06-17 芝浦メカトロニクス株式会社 保護体、基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
DE102013100711B4 (de) * 2013-01-24 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
EP2908335B1 (en) 2014-02-14 2020-04-15 ams AG Dicing method
KR20160064031A (ko) * 2014-11-27 2016-06-07 어드밴스 프로세스 인테그레이트 테크놀로지 리미티드 웨이퍼 기판을 사용하지 않는 인터포저층의 제작 방법
KR101976930B1 (ko) * 2017-06-16 2019-05-09 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자
KR102713057B1 (ko) * 2019-10-18 2024-10-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름
US11996384B2 (en) * 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
WO2022176861A1 (ja) * 2021-02-18 2022-08-25 パナソニックＩｐマネジメント株式会社 磁気スケール、磁気スケールシステム、磁気スケールの製造方法及び磁気スケールシステムの製造方法
JP2025518656A (ja) 2022-06-03 2025-06-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 一時的に接合するための薄層からなる多層系

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JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP2006190347A (ja) * 2004-12-28 2006-07-20 Sharp Corp メモリ素子、記録層に対する記録方法、及び記録装置
JP2010098072A (ja) * 2008-10-15 2010-04-30 Fuji Electric Systems Co Ltd 半導体装置の製造方法及びそのための装置

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US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP2005209829A (ja) * 2004-01-22 2005-08-04 Taiyo Yuden Co Ltd 半導体ウェハ固定方法及び装置、並びに半導体ウェハが固定された構造体
JP2006013000A (ja) * 2004-06-23 2006-01-12 Sekisui Chem Co Ltd Ｉｃチップの製造方法
JP4200458B2 (ja) * 2006-05-10 2008-12-24 ソニー株式会社 薄膜トランジスタの製造方法
JP4932758B2 (ja) * 2008-02-06 2012-05-16 富士フイルム株式会社 発光デバイス及びその製造方法
JP4934620B2 (ja) * 2008-03-25 2012-05-16 古河電気工業株式会社 ウエハ加工用テープ
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
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JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP2006190347A (ja) * 2004-12-28 2006-07-20 Sharp Corp メモリ素子、記録層に対する記録方法、及び記録装置
JP2010098072A (ja) * 2008-10-15 2010-04-30 Fuji Electric Systems Co Ltd 半導体装置の製造方法及びそのための装置

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112618A (ja) * 2012-12-05 2014-06-19 Tokyo Ohka Kogyo Co Ltd 積層体の形成方法
US10074626B2 (en) 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
JP2017224718A (ja) * 2016-06-15 2017-12-21 日本電信電話株式会社 半導体デバイスのガラス基板固定方法及び剥離方法
KR20180040094A (ko) 2016-10-11 2018-04-19 신에쓰 가가꾸 고교 가부시끼가이샤 웨이퍼 적층체, 그의 제조 방법 및 웨이퍼 적층용 접착제 조성물
KR20180040093A (ko) 2016-10-11 2018-04-19 신에쓰 가가꾸 고교 가부시끼가이샤 웨이퍼 적층체 및 그의 제조 방법
EP3315301A1 (en) 2016-10-11 2018-05-02 Shin-Etsu Chemical Co., Ltd. Wafer laminate, method for production thereof, and adhesive composition for wafer laminate
EP3309824A1 (en) 2016-10-11 2018-04-18 Shin-Etsu Chemical Co., Ltd. Wafer laminate and method of producing the same
EP3618102A2 (en) 2018-09-03 2020-03-04 Shin-Etsu Chemical Co., Ltd. Method for producing thin wafer
KR20200026727A (ko) 2018-09-03 2020-03-11 신에쓰 가가꾸 고교 가부시끼가이샤 박형 웨이퍼의 제조 방법
US11069557B2 (en) 2018-09-03 2021-07-20 Shin-Etsu Chemical Co., Ltd. Method for producing thin wafer
JPWO2020111193A1 (ja) * 2018-11-29 2021-10-21 昭和電工マテリアルズ株式会社 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体
WO2020111193A1 (ja) * 2018-11-29 2020-06-04 日立化成株式会社 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体
JP7712080B2 (ja) 2018-11-29 2025-07-23 株式会社レゾナック 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体
KR20220012877A (ko) * 2019-05-22 2022-02-04 쇼와덴코머티리얼즈가부시끼가이샤 반도체 장치를 제조하는 방법
JPWO2020235597A1 (https=) * 2019-05-22 2020-11-26
KR102864887B1 (ko) * 2019-05-22 2025-09-25 가부시끼가이샤 레조낙 반도체 장치를 제조하는 방법
TWI836077B (zh) * 2019-05-22 2024-03-21 日商力森諾科股份有限公司 半導體裝置的製造方法
WO2020235597A1 (ja) * 2019-05-22 2020-11-26 昭和電工マテリアルズ株式会社 半導体装置を製造する方法
JP2025032136A (ja) * 2019-05-22 2025-03-11 株式会社レゾナック 半導体装置を製造する方法
US12165882B2 (en) 2019-05-22 2024-12-10 Resonac Corporation Semiconductor device manufacturing method
JP7597025B2 (ja) 2019-05-22 2024-12-10 株式会社レゾナック 半導体装置を製造する方法
JP2024515032A (ja) * 2021-03-31 2024-04-04 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 担体の直接接合及び剥離
JP2024542558A (ja) * 2021-12-03 2024-11-15 インターナショナル・ビジネス・マシーンズ・コーポレーション レーザ剥離層を有するシリコン・ハンドラ
JP2023181886A (ja) * 2022-06-13 2023-12-25 日東電工株式会社 電子部品仮固定用粘着シート
JP7819041B2 (ja) 2022-06-13 2026-02-24 日東電工株式会社 電子部品仮固定用粘着シート
WO2024190701A1 (ja) 2023-03-10 2024-09-19 信越化学工業株式会社 レーザー剥離組成物、積層体、及び、回路付基板加工方法
KR20250162538A (ko) 2023-03-10 2025-11-18 신에쓰 가가꾸 고교 가부시끼가이샤 레이저 박리 조성물, 적층체, 및, 회로부착 기판 가공방법
EP4679497A1 (en) 2023-03-10 2026-01-14 Shin-Etsu Chemical Co., Ltd. Laser peeling composition, laminate, and processing method for substrate with circuit

Also Published As

Publication number Publication date
WO2011159456A2 (en) 2011-12-22
TW201222713A (en) 2012-06-01
KR20130115208A (ko) 2013-10-21
US20130087959A1 (en) 2013-04-11
WO2011159456A3 (en) 2012-04-05
TWI523142B (zh) 2016-02-21

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