JP2014112618A - 積層体の形成方法 - Google Patents
積層体の形成方法 Download PDFInfo
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- JP2014112618A JP2014112618A JP2012266699A JP2012266699A JP2014112618A JP 2014112618 A JP2014112618 A JP 2014112618A JP 2012266699 A JP2012266699 A JP 2012266699A JP 2012266699 A JP2012266699 A JP 2012266699A JP 2014112618 A JP2014112618 A JP 2014112618A
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- protective layer
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Images
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
【解決手段】積層体10の形成方法は、分離層14の表面であってサポートプレート12と接着していない面のうち、少なくとも接着層13と重畳していない面を覆う保護層15を形成する保護層形成工程と、保護層15における、積層体10を形成したときに露出する部分を除去する保護層除去工程とを包含する。
【選択図】図1
Description
まず、参考として、積層体30の形成方法について、図3を用いて説明する。図3は、露出する保護層を除去しない場合における積層体の形成方法を示す図である。
以下、本発明の実施の形態について、詳細に説明する。本実施形態により、図1の(f)に示されるような積層体10が形成される。
基板11は、サポートプレート12に支持された状態で、薄化、実装等のプロセスに供されるものである。積層体10が備える基板11は、ウエハに限定されず、薄いフィルム基板、フレキシブル基板等の任意の基板を採用することができる。また、基板11における接着層13側の面には、電気回路等の電子素子の微細構造が形成されていてもよい。
サポートプレート12は、基板11を支持する支持体であり、光透過性を有している。そのため、積層体10の外からサポートプレート12に向けて光が照射されたときに、当該光がサポートプレート12を通過して分離層14に到達する。また、サポートプレート12は、必ずしも全ての光を透過させる必要はなく、分離層14に吸収されるべき(所定の波長を有している)光を透過させることができればよい。
分離層14は、サポートプレート12を介して照射される光を吸収することによって変質する材料から形成されている層である。本明細書において、分離層14が「変質する」とは、分離層14をわずかな外力を受けて破壊され得る状態、又は分離層14と接する層との接着力が低下した状態にさせる現象を意味する。光を吸収することによって生じる分離層14の変質の結果として、分離層14は、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート12を持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
分離層14は、光吸収性を有している構造をその繰返し単位に含んでいる重合体を含有していてもよい。当該重合体は、光の照射を受けて変質する。当該重合体の変質は、上記構造が照射された光を吸収することによって生じる。分離層14は、重合体の変質の結果として、光の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、サポートプレート12を持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
分離層14は、無機物からなっていてもよい。分離層14は、無機物によって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート12を持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
分離層14は、赤外線吸収性の構造を有する化合物によって形成されていてもよい。当該化合物は、赤外線を吸収することにより変質する。分離層14は、化合物の変質の結果として、赤外線の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、サポートプレートを持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
中でも、シロキサン骨格を有する化合物としては、上記化学式(1)で表される繰り返し単位及び下記化学式(3)で表される繰り返し単位の共重合体であるtert−ブチルスチレン(TBST)−ジメチルシロキサン共重合体がより好ましく、上記式(1)で表される繰り返し単位及び下記化学式(3)で表される繰り返し単位を1:1で含む、TBST−ジメチルシロキサン共重合体がさらに好ましい。
シルセスキオキサン骨格を有する化合物としては、このほかにも、特許文献3:特開2007−258663号公報(2007年10月4日公開)、特許文献4:特開2010−120901号公報(2010年6月3日公開)、特許文献5:特開2009−263316号公報(2009年11月12日公開)及び特許文献6:特開2009−263596号公報(2009年11月12日公開)において開示されている各シルセスキオキサン樹脂を好適に利用することができる。
分離層14は、フルオロカーボンからなっていてもよい。分離層14は、フルオロカーボンによって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート12を持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
分離層14は、赤外線吸収物質を含有していてもよい。分離層14は、赤外線吸収物質を含有して構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート12を持ち上げるなど)ことによって、分離層14が破壊されて、サポートプレート12と基板11とを容易に分離することができる。
接着層13は、基板11をサポートプレート12に接着固定すると同時に、基板11の表面を覆って保護する構成である。よって、接着層は、基板11の加工時又は搬送時に、サポートプレート12に対する基板11の固定、及び基板11の保護すべき面の被覆を維持する接着性及び強度を有している必要がある。一方で、サポートプレート12に対する基板11の固定が不要になったときに、基板11から容易に剥離又は除去され得る必要がある。
炭化水素樹脂は、炭化水素骨格を有し、単量体組成物を重合してなる樹脂である。炭化水素樹脂として、シクロオレフィン系ポリマー(以下、「樹脂(A)」ということがある)、ならびに、テルペン樹脂、ロジン系樹脂及び石油樹脂からなる群より選ばれる少なくとも1種の樹脂(以下、「樹脂(B)」ということがある)等が挙げられるが、これに限定されない。
積層体が備える接着層を構成し得るブロック共重合体は、モノマー単位が連続して結合したブロック部位が2種以上結合した重合体であり、ブロックコポリマーと称することもある。
アクリル−スチレン系樹脂としては、例えば、スチレン又はスチレンの誘導体と、(メタ)アクリル酸エステル等とを単量体として用いて重合した樹脂が挙げられる。
マレイミド系樹脂としては、例えば、単量体として、N−メチルマレイミド、N−エチルマレイミド、N−n−プロピルマレイミド、N−イソプロピルマレイミド、N−n−ブチルマレイミド、N−イソブチルマレイミド、N−sec−ブチルマレイミド、N−tert−ブチルマレイミド、N−n−ペンチルマレイミド、N−n−ヘキシルマレイミド、N−n−へプチルマレイミド、N−n−オクチルマレイミド、N−ラウリルマレイミド、N−ステアリルマレイミドなどのアルキル基を有するマレイミド、N−シクロプロピルマレイミド、N−シクロブチルマレイミド、N−シクロペンチルマレイミド、N−シクロヘキシルマレイミド、N−シクロヘプチルマレイミド、N−シクロオクチルマレイミド等の脂肪族炭化水素基を有するマレイミド、N−フェニルマレイミド、N−m−メチルフェニルマレイミド、N−o−メチルフェニルマレイミド、N−p−メチルフェニルマレイミド等のアリール基を有する芳香族マレイミド等を重合して得られた樹脂が挙げられる。
このようなシクロオレフィンコポリマーとしては、APL 8008T、APL 8009T、及びAPL 6013T(全て三井化学株式会社製)などを使用できる。
保護層15は、分離層14の表面であってサポートプレート12と接着していない面のうち、少なくとも接着層13と重畳していない面を覆うものである。保護層15は、例えば、レジスト剥離処理(レジスト剥離工程)等の高温且つ長時間の薬品処理や、その後に行なわれる高温(例えば260℃)での加熱処理工程によって分離層14が変質しないように保護することができる。
次に積層体10の形成方法について、図1を用いて説明する。図1は、保護層における、積層体を形成したときに露出する部分を、接着工程前に除去する場合における積層体の形成方法を示す図である。
次に、積層体20の形成方法について、図2を用いて説明する。図2は、保護層における、積層体を形成したときに露出する部分を、接着工程後に除去する場合における積層体の形成方法を示す図である。なお、上記積層体の形成方法1は、接着工程前に保護層除去工程を行なっているが、本形成方法は、接着工程後に保護層除去工程を行なっている。また、上記積層体の形成方法と共通する工程については、その説明を省略する。
本発明に係る積層体の形成方法は、保護層を形成しない場合も含んでいる。つまり、本発明に係る積層体の形成方法は、基板と、接着層と、光を吸収することにより変質する分離層と、前記基板を支持する支持体とをこの順に積層して積層体を形成する積層体の形成方法であって、前記分離層における、積層体を形成したときに露出する部分をプラズマ処理により除去する分離層除去工程を包含する。
〔積層体の形成〕
(プロセス)流量400sccm、圧力700mTorr、高周波電力2,500W及び成膜温度240℃の条件下において、反応ガスとしてC4F8を使用したCVD法により、分離層であるフルオロカーボン膜(厚さ1μm)を支持体(12インチガラス基板、厚さ700μm)上に形成し、その上に接着剤組成物であるTZNR−A3007t(東京応化工業株式会社製)を塗布し、220℃で3分間のベークを行なうことで膜厚1.5μmの保護層を形成した(保護層形成工程)。12インチシリコンウエハには主溶剤が280重量部の上記接着剤組成物をスピン塗布して、100℃、160℃、200℃で各3分加熱して接着層を形成し(膜厚50μm)、真空下220℃、4,000Kgの条件で3分間、ガラス支持体と貼り合せを行ない積層体とした(接着工程)。
保護層を介してサポートプレートに貼り付けられたウエハから露出した部分の保護層を、p−メンタンを用いて除去した。まず、ウエハの周縁部の直ぐ外側の直上に配置した溶剤噴出用のノズルから20ml/minの流量でもって溶剤を供給しながら、ウエハを1,500rpmで10分間回転させた。次いで、溶剤の供給を停止し、ウエハを乾燥させた。乾燥は、100℃、160℃及び220℃でのベークをこの順序で各6分間行なうとともに、その間、ウエハを回転させることで実施した。その後、ウエハをクーリングプレートに移し、ピンアップして3分間徐冷した。これによって、ウエハから露出している部分の保護層のみを除去することができた。
接着層を介してサポートプレートに貼り付けられたウエハから露出した部分の分離層をプラズマ処理により除去した。プラズマ処理は、くし型電極またはICP電極を用い、以下の条件で行なった。
〔積層体の形成〕
実施例1と同様の条件で、積層体を形成した。本実施例にて形成した積層体は、保護層が形成されていない点で、実施例1にて形成した積層体と異なる。
次に、接着層を介してサポートプレートに貼り付けられたウエハから露出した部分の分離層をプラズマ処理により除去した。プラズマ処理は、くし型電極またはICP電極を用い、以下の条件で行なった。
11、31 基板
12、32 サポートプレート(支持体)
13、33 接着層
14、34 分離層
15、35 保護層
36 CVD膜
37 剥離物
Claims (7)
- 基板と、接着層と、光を吸収することにより変質する分離層と、前記基板を支持する支持体とをこの順に積層して積層体を形成する積層体の形成方法であって、
前記分離層の表面であって前記支持体と接着していない面のうち、少なくとも接着層と重畳していない面を覆う保護層を形成する保護層形成工程と、
保護層における、積層体を形成したときに露出する部分を除去する保護層除去工程とを包含することを特徴とする積層体の形成方法。 - 前記保護層除去工程は、基板と支持体とを貼り合わせる接着工程の前に行われることを特徴とする請求項1に記載の積層体の形成方法。
- 前記保護層除去工程では、溶剤処理により保護層を除去することを特徴とする請求項2に記載の積層体の形成方法。
- 基板と支持体とを貼り合わせる接着工程と、
前記接着工程の後、前記基板に対して加熱処理及び真空処理のうちの少なくとも一方を施す加工工程とをさらに包含し、
前記接着工程を行った後、前記加工工程を行なう前に、前記保護層除去工程を行なうことを特徴とする請求項1に記載の積層体の形成方法。 - 前記保護層除去工程では、溶剤処理又はプラズマ処理により保護層を除去することを特徴とする請求項4に記載の積層体の形成方法。
- 前記プラズマ処理により、分離層における、積層体を形成したときに露出する部分を保護層と共に除去することを特徴とする請求項5に記載の積層体の形成方法。
- 基板と、接着層と、光を吸収することにより変質する分離層と、前記基板を支持する支持体とをこの順に積層して積層体を形成する積層体の形成方法であって、
前記分離層における、積層体を形成したときに露出する部分をプラズマ処理により除去する分離層除去工程を包含することを特徴とする積層体の形成方法。
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JP2004253483A (ja) * | 2003-02-18 | 2004-09-09 | Dainippon Printing Co Ltd | 半導体ウエハの製造方法 |
JP2009543708A (ja) * | 2006-07-14 | 2009-12-10 | スリーエム イノベイティブ プロパティズ カンパニー | 層状体、及び前記層状体を用いた薄型基材の製造方法 |
JP2010098072A (ja) * | 2008-10-15 | 2010-04-30 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法及びそのための装置 |
US20100330788A1 (en) * | 2009-06-30 | 2010-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin wafer handling structure and method |
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JP2014194986A (ja) * | 2013-03-28 | 2014-10-09 | Tokyo Ohka Kogyo Co Ltd | 基板の処理方法 |
JP2017108116A (ja) * | 2015-11-26 | 2017-06-15 | 信越化学工業株式会社 | ウエハ積層体及びその製造方法 |
US10453732B2 (en) | 2015-11-26 | 2019-10-22 | Shin-Etsu Chemical Co., Ltd. | Wafer laminate and making method |
WO2017187769A1 (ja) * | 2016-04-26 | 2017-11-02 | Jsr株式会社 | 基材の処理方法および半導体装置の製造方法 |
CN107919315A (zh) * | 2016-10-11 | 2018-04-17 | 信越化学工业株式会社 | 晶片层合体及其制备方法 |
JP2018063972A (ja) * | 2016-10-11 | 2018-04-19 | 信越化学工業株式会社 | ウエハ積層体及びその製造方法 |
JP2020049753A (ja) * | 2018-09-26 | 2020-04-02 | キヤノン株式会社 | 基板および液体吐出ヘッド用基板の製造方法 |
JP7182975B2 (ja) | 2018-09-26 | 2022-12-05 | キヤノン株式会社 | 液体吐出ヘッド用基板の製造方法 |
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JP6088230B2 (ja) | 2017-03-01 |
US20140151328A1 (en) | 2014-06-05 |
KR101795103B1 (ko) | 2017-11-07 |
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