TWI521601B - 多晶矽的製造方法 - Google Patents
多晶矽的製造方法 Download PDFInfo
- Publication number
- TWI521601B TWI521601B TW102137171A TW102137171A TWI521601B TW I521601 B TWI521601 B TW I521601B TW 102137171 A TW102137171 A TW 102137171A TW 102137171 A TW102137171 A TW 102137171A TW I521601 B TWI521601 B TW I521601B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- layer
- amorphous germanium
- germanium layer
- solid
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 16
- 229920005591 polysilicon Polymers 0.000 title claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 132
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 132
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 41
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 23
- 239000007787 solid Substances 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 11
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 3
- 238000005224 laser annealing Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310280262.3A CN104282539A (zh) | 2013-07-04 | 2013-07-04 | 一种多晶硅制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503261A TW201503261A (zh) | 2015-01-16 |
| TWI521601B true TWI521601B (zh) | 2016-02-11 |
Family
ID=52257323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102137171A TWI521601B (zh) | 2013-07-04 | 2013-10-15 | 多晶矽的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015015471A (ja) |
| CN (1) | CN104282539A (ja) |
| TW (1) | TWI521601B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489487A (zh) * | 2016-01-14 | 2016-04-13 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜及晶体管的制备方法、激光晶化装置 |
| CN106328497B (zh) * | 2016-10-28 | 2020-05-19 | 昆山国显光电有限公司 | 低温多晶硅薄膜及其制备方法及显示装置 |
| CN115415181B (zh) * | 2022-07-28 | 2024-04-23 | 中国电子科技集团公司第二十九研究所 | 一种沉头铆钉凸轮式筛选工具及使用方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4919530B2 (ja) * | 1999-08-18 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6451631B1 (en) * | 2000-08-10 | 2002-09-17 | Hitachi America, Ltd. | Thin film crystal growth by laser annealing |
| JP2002217125A (ja) * | 2001-01-23 | 2002-08-02 | Sumitomo Heavy Ind Ltd | 表面処理装置及び方法 |
| JP4364611B2 (ja) * | 2002-11-29 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
| US7547866B2 (en) * | 2004-04-28 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same |
| TW200841474A (en) * | 2007-04-13 | 2008-10-16 | Chunghwa Picture Tubes Ltd | Method for fabricating thin film transistors |
| JP4481347B2 (ja) * | 2009-04-24 | 2010-06-16 | シャープ株式会社 | 多結晶半導体膜の形成方法、半導体デバイスの製造方法及び半導体デバイス製造装置 |
-
2013
- 2013-07-04 CN CN201310280262.3A patent/CN104282539A/zh active Pending
- 2013-10-15 TW TW102137171A patent/TWI521601B/zh not_active IP Right Cessation
-
2014
- 2014-07-03 JP JP2014137793A patent/JP2015015471A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW201503261A (zh) | 2015-01-16 |
| CN104282539A (zh) | 2015-01-14 |
| JP2015015471A (ja) | 2015-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4864596B2 (ja) | 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法 | |
| JP2009135448A5 (ja) | ||
| KR100740124B1 (ko) | 다결정 실리콘 박막 트랜지스터 및 그 제조방법 | |
| JP2009135453A5 (ja) | ||
| TWI521601B (zh) | 多晶矽的製造方法 | |
| KR101015844B1 (ko) | 박막트랜지스터, 그의 제조방법 및 그를 구비하는유기전계발광표시장치의 제조방법 | |
| JP5299950B2 (ja) | 半導体製造方法 | |
| JP2008004812A (ja) | 半導体薄膜の製造方法 | |
| JP5918160B2 (ja) | ゲッタリング半導体ウエハおよびその製造方法 | |
| KR102201923B1 (ko) | 폴리실리콘을 형성하는 방법 | |
| JP2008270243A (ja) | 半導体デバイスの製造方法 | |
| JP2007208180A (ja) | レーザアニール技術、半導体膜、半導体装置、及び電気光学装置 | |
| WO2016155149A1 (zh) | 多晶硅薄膜制备方法、半导体器件、显示基板及显示装置 | |
| TWI467659B (zh) | 結晶質膜的製造方法以及結晶質膜的製造裝置 | |
| JP2012507878A (ja) | プライミングおよび光束によって板状体の層を加熱するための方法および装置 | |
| JP2014175651A (ja) | 高エネルギー放射線による多結晶珪素を形成する方法 | |
| JP5235462B2 (ja) | レーザ加工方法及び半導体装置 | |
| JP2005276944A (ja) | 半導体デバイス、その製造方法および製造装置 | |
| JP2003224070A5 (ja) | ||
| CN111095482A (zh) | 处理靶材料的方法 | |
| JP2007207896A (ja) | レーザビーム投影マスクおよびそれを用いたレーザ加工方法、レーザ加工装置 | |
| JP2003163164A (ja) | 結晶性半導体薄膜及びその形成方法 | |
| JP2004158584A (ja) | 多結晶質シリコン膜製造装置及びそれを用いた製造方法並びに半導体装置 | |
| WO2012081474A1 (ja) | 結晶性半導体膜の形成方法 | |
| JP2014060184A (ja) | 低温ポリシリコン膜の形成方法及び薄膜トランジスタの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |