TWI517153B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI517153B TWI517153B TW103113846A TW103113846A TWI517153B TW I517153 B TWI517153 B TW I517153B TW 103113846 A TW103113846 A TW 103113846A TW 103113846 A TW103113846 A TW 103113846A TW I517153 B TWI517153 B TW I517153B
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- Prior art keywords
- memory cell
- film
- circuit
- power supply
- supply line
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- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/142—Contactless power supplies, e.g. RF, induction, or IR
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Static Random-Access Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006349191 | 2006-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201428741A TW201428741A (zh) | 2014-07-16 |
| TWI517153B true TWI517153B (zh) | 2016-01-11 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| TW103113846A TWI517153B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
| TW096148787A TWI442398B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096148787A TWI442398B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7773436B2 (https=) |
| JP (2) | JP2008181634A (https=) |
| KR (1) | KR101514628B1 (https=) |
| TW (2) | TWI517153B (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044813B1 (en) * | 2006-11-16 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Radio field intensity measurement device, and radio field intensity detector and game console using the same |
| JP5100355B2 (ja) | 2006-12-22 | 2012-12-19 | 株式会社半導体エネルギー研究所 | 温度制御装置 |
| JP2008181634A (ja) * | 2006-12-26 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5312810B2 (ja) * | 2007-01-19 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 充電装置 |
| US7750852B2 (en) | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2009087928A (ja) * | 2007-09-13 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR101922849B1 (ko) * | 2009-11-20 | 2018-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011089835A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| TWI543177B (zh) | 2010-08-19 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其檢驗方法與其驅動方法 |
| US9024317B2 (en) * | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
| TWI587335B (zh) * | 2011-10-19 | 2017-06-11 | 國立成功大學 | 具p(an-eg-an)複合高分子膠態電解質之超級電容 器及其製造方法 |
| KR101555753B1 (ko) * | 2013-11-18 | 2015-09-30 | 서울대학교산학협력단 | 단일 공정의 부식 방지된 구리 페이스트 제조와 다이폴 태그 안테나로의 응용 |
| JP6353247B2 (ja) * | 2014-03-11 | 2018-07-04 | キヤノン株式会社 | 半導体装置、その制御方法、及びカメラ |
| US10204898B2 (en) | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6553444B2 (ja) * | 2014-08-08 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102269899B1 (ko) | 2015-01-12 | 2021-06-28 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| JP2017108397A (ja) | 2015-11-30 | 2017-06-15 | 株式会社半導体エネルギー研究所 | 信号処理回路、及び該信号処理回路を有する半導体装置 |
| WO2020095148A1 (ja) * | 2018-11-08 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950008676B1 (ko) | 1986-04-23 | 1995-08-04 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 메모리 장치 및 그의 결함 구제 방법 |
| JPS62250599A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | 半導体メモリ装置 |
| US4937790A (en) | 1987-08-31 | 1990-06-26 | Hitachi, Ltd. | Semiconductor memory device |
| JP2765862B2 (ja) * | 1987-08-31 | 1998-06-18 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH01269299A (ja) * | 1988-04-20 | 1989-10-26 | Hitachi Ltd | 半導体メモリ装置 |
| JP2892715B2 (ja) * | 1989-11-06 | 1999-05-17 | 株式会社日立製作所 | 半導体メモリ装置 |
| US5278839A (en) | 1990-04-18 | 1994-01-11 | Hitachi, Ltd. | Semiconductor integrated circuit having self-check and self-repair capabilities |
| JPH04228196A (ja) * | 1990-04-18 | 1992-08-18 | Hitachi Ltd | 半導体集積回路 |
| JP2978536B2 (ja) * | 1990-07-04 | 1999-11-15 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH0636592A (ja) * | 1992-07-13 | 1994-02-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5452251A (en) | 1992-12-03 | 1995-09-19 | Fujitsu Limited | Semiconductor memory device for selecting and deselecting blocks of word lines |
| JP3257860B2 (ja) | 1993-05-17 | 2002-02-18 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH08138018A (ja) * | 1994-11-10 | 1996-05-31 | Rikagaku Kenkyusho | データ・キャリア・システム |
| GB9424598D0 (en) * | 1994-12-06 | 1995-01-25 | Philips Electronics Uk Ltd | Semiconductor memory with non-volatile memory transistor |
| JPH09128991A (ja) | 1995-08-25 | 1997-05-16 | Sharp Corp | 冗長救済回路 |
| US6041000A (en) * | 1998-10-30 | 2000-03-21 | Stmicroelectronics, Inc. | Initialization for fuse control |
| DE19950362C1 (de) | 1999-10-19 | 2001-06-07 | Infineon Technologies Ag | DRAM-Zellenanordnung, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung |
| JP2001135084A (ja) | 1999-11-08 | 2001-05-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP4191355B2 (ja) * | 2000-02-10 | 2008-12-03 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| US6284406B1 (en) * | 2000-06-09 | 2001-09-04 | Ntk Powerdex, Inc. | IC card with thin battery |
| FR2811132B1 (fr) * | 2000-06-30 | 2002-10-11 | St Microelectronics Sa | Circuit de memoire dynamique comportant des cellules de secours |
| JP4345204B2 (ja) | 2000-07-04 | 2009-10-14 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| JP2002063797A (ja) * | 2000-08-22 | 2002-02-28 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US6525976B1 (en) * | 2000-10-24 | 2003-02-25 | Excellatron Solid State, Llc | Systems and methods for reducing noise in mixed-mode integrated circuits |
| US6362602B1 (en) * | 2001-05-03 | 2002-03-26 | Ford Global Technologies, Inc. | Strategy to control battery state of charge based on vehicle velocity |
| JP5119563B2 (ja) | 2001-08-03 | 2013-01-16 | 日本電気株式会社 | 不良メモリセル救済回路を有する半導体記憶装置 |
| US6818604B2 (en) * | 2001-10-04 | 2004-11-16 | Speedfam-Ipec Corporation | System and method for cleaning workpieces |
| JP3866588B2 (ja) | 2002-03-01 | 2007-01-10 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
| US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US6865098B1 (en) * | 2003-05-30 | 2005-03-08 | Netlogic Microsystems, Inc. | Row redundancy in a content addressable memory device |
| US7030714B2 (en) * | 2003-10-01 | 2006-04-18 | Intel Corporation | Method and apparatus to match output impedance of combined outphasing power amplifiers |
| JP2005116106A (ja) * | 2003-10-09 | 2005-04-28 | Elpida Memory Inc | 半導体記憶装置とその製造方法 |
| JP2005174533A (ja) | 2003-11-19 | 2005-06-30 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、ｉｃカード及び半導体装置の駆動方法 |
| US7239564B2 (en) * | 2003-11-19 | 2007-07-03 | Semiconductor Energy Laboratory, Co., Ltd. | Semiconductor device for rectifying memory defects |
| JP2005209492A (ja) * | 2004-01-23 | 2005-08-04 | Mitsubishi Chemicals Corp | 電気化学デバイス、並びにこれを利用した電気二重層コンデンサ及び電池 |
| WO2006051996A1 (en) * | 2004-11-11 | 2006-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7719872B2 (en) | 2005-12-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Write-once nonvolatile memory with redundancy capability |
| JP2008181634A (ja) * | 2006-12-26 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
2007
- 2007-12-12 JP JP2007320679A patent/JP2008181634A/ja not_active Withdrawn
- 2007-12-14 US US12/000,592 patent/US7773436B2/en not_active Expired - Fee Related
- 2007-12-18 KR KR1020070133163A patent/KR101514628B1/ko not_active Expired - Fee Related
- 2007-12-19 TW TW103113846A patent/TWI517153B/zh not_active IP Right Cessation
- 2007-12-19 TW TW096148787A patent/TWI442398B/zh not_active IP Right Cessation
-
2010
- 2010-08-05 US US12/850,736 patent/US8111567B2/en not_active Expired - Fee Related
-
2012
- 2012-01-27 US US13/359,534 patent/US8520457B2/en not_active Expired - Fee Related
-
2013
- 2013-06-20 JP JP2013129714A patent/JP2013178871A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US8520457B2 (en) | 2013-08-27 |
| US20120120742A1 (en) | 2012-05-17 |
| KR101514628B1 (ko) | 2015-04-23 |
| KR20080060157A (ko) | 2008-07-01 |
| US8111567B2 (en) | 2012-02-07 |
| US7773436B2 (en) | 2010-08-10 |
| TW200837756A (en) | 2008-09-16 |
| US20080151660A1 (en) | 2008-06-26 |
| US20100302887A1 (en) | 2010-12-02 |
| TW201428741A (zh) | 2014-07-16 |
| JP2008181634A (ja) | 2008-08-07 |
| JP2013178871A (ja) | 2013-09-09 |
| TWI442398B (zh) | 2014-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |