JP2008181634A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2008181634A
JP2008181634A JP2007320679A JP2007320679A JP2008181634A JP 2008181634 A JP2008181634 A JP 2008181634A JP 2007320679 A JP2007320679 A JP 2007320679A JP 2007320679 A JP2007320679 A JP 2007320679A JP 2008181634 A JP2008181634 A JP 2008181634A
Authority
JP
Japan
Prior art keywords
memory cell
film
circuit
battery
data holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007320679A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008181634A5 (https=
Inventor
Takayuki Inoue
卓之 井上
Yoshimoto Kurokawa
義元 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007320679A priority Critical patent/JP2008181634A/ja
Publication of JP2008181634A publication Critical patent/JP2008181634A/ja
Publication of JP2008181634A5 publication Critical patent/JP2008181634A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/142—Contactless power supplies, e.g. RF, induction, or IR

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2007320679A 2006-12-26 2007-12-12 半導体装置 Withdrawn JP2008181634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007320679A JP2008181634A (ja) 2006-12-26 2007-12-12 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006349191 2006-12-26
JP2007320679A JP2008181634A (ja) 2006-12-26 2007-12-12 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013129714A Division JP2013178871A (ja) 2006-12-26 2013-06-20 半導体装置

Publications (2)

Publication Number Publication Date
JP2008181634A true JP2008181634A (ja) 2008-08-07
JP2008181634A5 JP2008181634A5 (https=) 2011-01-13

Family

ID=39542557

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007320679A Withdrawn JP2008181634A (ja) 2006-12-26 2007-12-12 半導体装置
JP2013129714A Pending JP2013178871A (ja) 2006-12-26 2013-06-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013129714A Pending JP2013178871A (ja) 2006-12-26 2013-06-20 半導体装置

Country Status (4)

Country Link
US (3) US7773436B2 (https=)
JP (2) JP2008181634A (https=)
KR (1) KR101514628B1 (https=)
TW (2) TWI517153B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016038930A (ja) * 2014-08-08 2016-03-22 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP2017130690A (ja) * 2010-12-24 2017-07-27 株式会社半導体エネルギー研究所 半導体装置
WO2020095148A1 (ja) * 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP2022000908A (ja) * 2014-08-08 2022-01-04 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8044813B1 (en) * 2006-11-16 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
JP5100355B2 (ja) 2006-12-22 2012-12-19 株式会社半導体エネルギー研究所 温度制御装置
JP2008181634A (ja) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP5312810B2 (ja) * 2007-01-19 2013-10-09 株式会社半導体エネルギー研究所 充電装置
US7750852B2 (en) 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009087928A (ja) * 2007-09-13 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101922849B1 (ko) * 2009-11-20 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089835A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI543177B (zh) 2010-08-19 2016-07-21 半導體能源研究所股份有限公司 半導體裝置及其檢驗方法與其驅動方法
TWI587335B (zh) * 2011-10-19 2017-06-11 國立成功大學 具p(an-eg-an)複合高分子膠態電解質之超級電容 器及其製造方法
KR101555753B1 (ko) * 2013-11-18 2015-09-30 서울대학교산학협력단 단일 공정의 부식 방지된 구리 페이스트 제조와 다이폴 태그 안테나로의 응용
JP6353247B2 (ja) * 2014-03-11 2018-07-04 キヤノン株式会社 半導体装置、その制御方法、及びカメラ
KR102269899B1 (ko) 2015-01-12 2021-06-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
JP2017108397A (ja) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250599A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd 半導体メモリ装置
JPH01133298A (ja) * 1987-08-31 1989-05-25 Hitachi Ltd 半導体メモリ装置
JPH01269299A (ja) * 1988-04-20 1989-10-26 Hitachi Ltd 半導体メモリ装置
JPH03150797A (ja) * 1989-11-06 1991-06-27 Hitachi Ltd 半導体メモリ装置
JPH0464999A (ja) * 1990-07-04 1992-02-28 Hitachi Ltd 半導体メモリ装置
JPH04228196A (ja) * 1990-04-18 1992-08-18 Hitachi Ltd 半導体集積回路
JPH0636592A (ja) * 1992-07-13 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置
JPH08138018A (ja) * 1994-11-10 1996-05-31 Rikagaku Kenkyusho データ・キャリア・システム
JP2005209492A (ja) * 2004-01-23 2005-08-04 Mitsubishi Chemicals Corp 電気化学デバイス、並びにこれを利用した電気二重層コンデンサ及び電池

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950008676B1 (ko) 1986-04-23 1995-08-04 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리 장치 및 그의 결함 구제 방법
US4937790A (en) 1987-08-31 1990-06-26 Hitachi, Ltd. Semiconductor memory device
US5278839A (en) 1990-04-18 1994-01-11 Hitachi, Ltd. Semiconductor integrated circuit having self-check and self-repair capabilities
US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JP3257860B2 (ja) 1993-05-17 2002-02-18 株式会社日立製作所 半導体メモリ装置
GB9424598D0 (en) * 1994-12-06 1995-01-25 Philips Electronics Uk Ltd Semiconductor memory with non-volatile memory transistor
JPH09128991A (ja) 1995-08-25 1997-05-16 Sharp Corp 冗長救済回路
US6041000A (en) * 1998-10-30 2000-03-21 Stmicroelectronics, Inc. Initialization for fuse control
DE19950362C1 (de) 1999-10-19 2001-06-07 Infineon Technologies Ag DRAM-Zellenanordnung, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung
JP2001135084A (ja) 1999-11-08 2001-05-18 Mitsubishi Electric Corp 半導体記憶装置
JP4191355B2 (ja) * 2000-02-10 2008-12-03 株式会社ルネサステクノロジ 半導体集積回路装置
US6284406B1 (en) * 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
FR2811132B1 (fr) * 2000-06-30 2002-10-11 St Microelectronics Sa Circuit de memoire dynamique comportant des cellules de secours
JP4345204B2 (ja) 2000-07-04 2009-10-14 エルピーダメモリ株式会社 半導体記憶装置
JP2002063797A (ja) * 2000-08-22 2002-02-28 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6525976B1 (en) * 2000-10-24 2003-02-25 Excellatron Solid State, Llc Systems and methods for reducing noise in mixed-mode integrated circuits
US6362602B1 (en) * 2001-05-03 2002-03-26 Ford Global Technologies, Inc. Strategy to control battery state of charge based on vehicle velocity
JP5119563B2 (ja) 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
US6818604B2 (en) * 2001-10-04 2004-11-16 Speedfam-Ipec Corporation System and method for cleaning workpieces
JP3866588B2 (ja) 2002-03-01 2007-01-10 エルピーダメモリ株式会社 半導体集積回路装置
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US6865098B1 (en) * 2003-05-30 2005-03-08 Netlogic Microsystems, Inc. Row redundancy in a content addressable memory device
US7030714B2 (en) * 2003-10-01 2006-04-18 Intel Corporation Method and apparatus to match output impedance of combined outphasing power amplifiers
JP2005116106A (ja) * 2003-10-09 2005-04-28 Elpida Memory Inc 半導体記憶装置とその製造方法
JP2005174533A (ja) 2003-11-19 2005-06-30 Semiconductor Energy Lab Co Ltd 半導体装置、電子機器、ｉｃカード及び半導体装置の駆動方法
US7239564B2 (en) * 2003-11-19 2007-07-03 Semiconductor Energy Laboratory, Co., Ltd. Semiconductor device for rectifying memory defects
WO2006051996A1 (en) * 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7719872B2 (en) 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
JP2008181634A (ja) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250599A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd 半導体メモリ装置
JPH01133298A (ja) * 1987-08-31 1989-05-25 Hitachi Ltd 半導体メモリ装置
JPH01269299A (ja) * 1988-04-20 1989-10-26 Hitachi Ltd 半導体メモリ装置
JPH03150797A (ja) * 1989-11-06 1991-06-27 Hitachi Ltd 半導体メモリ装置
JPH04228196A (ja) * 1990-04-18 1992-08-18 Hitachi Ltd 半導体集積回路
JPH0464999A (ja) * 1990-07-04 1992-02-28 Hitachi Ltd 半導体メモリ装置
JPH0636592A (ja) * 1992-07-13 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置
JPH08138018A (ja) * 1994-11-10 1996-05-31 Rikagaku Kenkyusho データ・キャリア・システム
JP2005209492A (ja) * 2004-01-23 2005-08-04 Mitsubishi Chemicals Corp 電気化学デバイス、並びにこれを利用した電気二重層コンデンサ及び電池

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017130690A (ja) * 2010-12-24 2017-07-27 株式会社半導体エネルギー研究所 半導体装置
JP2016038930A (ja) * 2014-08-08 2016-03-22 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP2022000908A (ja) * 2014-08-08 2022-01-04 株式会社半導体エネルギー研究所 半導体装置
JP7142135B2 (ja) 2014-08-08 2022-09-26 株式会社半導体エネルギー研究所 半導体装置
US11817453B2 (en) 2014-08-08 2023-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2020095148A1 (ja) * 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JPWO2020095148A1 (ja) * 2018-11-08 2021-12-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US11568944B2 (en) 2018-11-08 2023-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory cells
JP7391874B2 (ja) 2018-11-08 2023-12-05 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US8520457B2 (en) 2013-08-27
US20120120742A1 (en) 2012-05-17
KR101514628B1 (ko) 2015-04-23
TWI517153B (zh) 2016-01-11
KR20080060157A (ko) 2008-07-01
US8111567B2 (en) 2012-02-07
US7773436B2 (en) 2010-08-10
TW200837756A (en) 2008-09-16
US20080151660A1 (en) 2008-06-26
US20100302887A1 (en) 2010-12-02
TW201428741A (zh) 2014-07-16
JP2013178871A (ja) 2013-09-09
TWI442398B (zh) 2014-06-21

Similar Documents

Publication Publication Date Title
TWI442398B (zh) 半導體裝置
JP5412034B2 (ja) 半導体装置
CN102520261B (zh) 电波强度测定装置、使用它的电波强度检测器及游戏设备
CN102664449B (zh) 蓄电装置及具备该蓄电装置的半导体装置
CN101087074B (zh) 蓄电装置及具备该蓄电装置的移动式电子设备
JP5041984B2 (ja) 整流回路、電源回路及び半導体装置
JP5258282B2 (ja) 半導体装置
CN102171812B (zh) 半导体器件
US20070216348A1 (en) Electric power supply system and electric power supply system for motor vehicle
JP5041830B2 (ja) 自動車
CN101097770A (zh) 半导体装置及电子设备
US8570151B2 (en) Semiconductor device
JP2008182687A (ja) 半導体装置
JP5100310B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101119

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101119

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120717

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120731

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120907

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130402

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130625