KR101514628B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101514628B1
KR101514628B1 KR1020070133163A KR20070133163A KR101514628B1 KR 101514628 B1 KR101514628 B1 KR 101514628B1 KR 1020070133163 A KR1020070133163 A KR 1020070133163A KR 20070133163 A KR20070133163 A KR 20070133163A KR 101514628 B1 KR101514628 B1 KR 101514628B1
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KR
South Korea
Prior art keywords
memory cell
circuit
transistor
battery
data holding
Prior art date
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Expired - Fee Related
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KR1020070133163A
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English (en)
Korean (ko)
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KR20080060157A (ko
Inventor
타카유키 이노우에
요시유키 쿠로카와
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080060157A publication Critical patent/KR20080060157A/ko
Application granted granted Critical
Publication of KR101514628B1 publication Critical patent/KR101514628B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/142—Contactless power supplies, e.g. RF, induction, or IR

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020070133163A 2006-12-26 2007-12-18 반도체 장치 Expired - Fee Related KR101514628B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006349191 2006-12-26
JPJP-P-2006-00349191 2006-12-26

Publications (2)

Publication Number Publication Date
KR20080060157A KR20080060157A (ko) 2008-07-01
KR101514628B1 true KR101514628B1 (ko) 2015-04-23

Family

ID=39542557

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070133163A Expired - Fee Related KR101514628B1 (ko) 2006-12-26 2007-12-18 반도체 장치

Country Status (4)

Country Link
US (3) US7773436B2 (https=)
JP (2) JP2008181634A (https=)
KR (1) KR101514628B1 (https=)
TW (2) TWI517153B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8044813B1 (en) * 2006-11-16 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
JP5100355B2 (ja) 2006-12-22 2012-12-19 株式会社半導体エネルギー研究所 温度制御装置
JP2008181634A (ja) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP5312810B2 (ja) * 2007-01-19 2013-10-09 株式会社半導体エネルギー研究所 充電装置
US7750852B2 (en) 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009087928A (ja) * 2007-09-13 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101922849B1 (ko) * 2009-11-20 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089835A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI543177B (zh) 2010-08-19 2016-07-21 半導體能源研究所股份有限公司 半導體裝置及其檢驗方法與其驅動方法
US9024317B2 (en) * 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
TWI587335B (zh) * 2011-10-19 2017-06-11 國立成功大學 具p(an-eg-an)複合高分子膠態電解質之超級電容 器及其製造方法
KR101555753B1 (ko) * 2013-11-18 2015-09-30 서울대학교산학협력단 단일 공정의 부식 방지된 구리 페이스트 제조와 다이폴 태그 안테나로의 응용
JP6353247B2 (ja) * 2014-03-11 2018-07-04 キヤノン株式会社 半導体装置、その制御方法、及びカメラ
US10204898B2 (en) 2014-08-08 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6553444B2 (ja) * 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
KR102269899B1 (ko) 2015-01-12 2021-06-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
JP2017108397A (ja) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
WO2020095148A1 (ja) * 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950008676B1 (ko) 1986-04-23 1995-08-04 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리 장치 및 그의 결함 구제 방법
JPS62250599A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd 半導体メモリ装置
US4937790A (en) 1987-08-31 1990-06-26 Hitachi, Ltd. Semiconductor memory device
JP2765862B2 (ja) * 1987-08-31 1998-06-18 株式会社日立製作所 半導体メモリ装置
JPH01269299A (ja) * 1988-04-20 1989-10-26 Hitachi Ltd 半導体メモリ装置
JP2892715B2 (ja) * 1989-11-06 1999-05-17 株式会社日立製作所 半導体メモリ装置
US5278839A (en) 1990-04-18 1994-01-11 Hitachi, Ltd. Semiconductor integrated circuit having self-check and self-repair capabilities
JPH04228196A (ja) * 1990-04-18 1992-08-18 Hitachi Ltd 半導体集積回路
JP2978536B2 (ja) * 1990-07-04 1999-11-15 株式会社日立製作所 半導体メモリ装置
JPH0636592A (ja) * 1992-07-13 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置
US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JP3257860B2 (ja) 1993-05-17 2002-02-18 株式会社日立製作所 半導体メモリ装置
JPH08138018A (ja) * 1994-11-10 1996-05-31 Rikagaku Kenkyusho データ・キャリア・システム
GB9424598D0 (en) * 1994-12-06 1995-01-25 Philips Electronics Uk Ltd Semiconductor memory with non-volatile memory transistor
JPH09128991A (ja) 1995-08-25 1997-05-16 Sharp Corp 冗長救済回路
US6041000A (en) * 1998-10-30 2000-03-21 Stmicroelectronics, Inc. Initialization for fuse control
DE19950362C1 (de) 1999-10-19 2001-06-07 Infineon Technologies Ag DRAM-Zellenanordnung, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung
JP2001135084A (ja) 1999-11-08 2001-05-18 Mitsubishi Electric Corp 半導体記憶装置
JP4191355B2 (ja) * 2000-02-10 2008-12-03 株式会社ルネサステクノロジ 半導体集積回路装置
US6284406B1 (en) * 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
FR2811132B1 (fr) * 2000-06-30 2002-10-11 St Microelectronics Sa Circuit de memoire dynamique comportant des cellules de secours
JP4345204B2 (ja) 2000-07-04 2009-10-14 エルピーダメモリ株式会社 半導体記憶装置
JP2002063797A (ja) * 2000-08-22 2002-02-28 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6525976B1 (en) * 2000-10-24 2003-02-25 Excellatron Solid State, Llc Systems and methods for reducing noise in mixed-mode integrated circuits
US6362602B1 (en) * 2001-05-03 2002-03-26 Ford Global Technologies, Inc. Strategy to control battery state of charge based on vehicle velocity
JP5119563B2 (ja) 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
US6818604B2 (en) * 2001-10-04 2004-11-16 Speedfam-Ipec Corporation System and method for cleaning workpieces
JP3866588B2 (ja) 2002-03-01 2007-01-10 エルピーダメモリ株式会社 半導体集積回路装置
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US6865098B1 (en) * 2003-05-30 2005-03-08 Netlogic Microsystems, Inc. Row redundancy in a content addressable memory device
US7030714B2 (en) * 2003-10-01 2006-04-18 Intel Corporation Method and apparatus to match output impedance of combined outphasing power amplifiers
JP2005116106A (ja) * 2003-10-09 2005-04-28 Elpida Memory Inc 半導体記憶装置とその製造方法
JP2005174533A (ja) 2003-11-19 2005-06-30 Semiconductor Energy Lab Co Ltd 半導体装置、電子機器、ｉｃカード及び半導体装置の駆動方法
US7239564B2 (en) * 2003-11-19 2007-07-03 Semiconductor Energy Laboratory, Co., Ltd. Semiconductor device for rectifying memory defects
JP2005209492A (ja) * 2004-01-23 2005-08-04 Mitsubishi Chemicals Corp 電気化学デバイス、並びにこれを利用した電気二重層コンデンサ及び電池
WO2006051996A1 (en) * 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7719872B2 (en) 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
JP2008181634A (ja) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
US8520457B2 (en) 2013-08-27
US20120120742A1 (en) 2012-05-17
TWI517153B (zh) 2016-01-11
KR20080060157A (ko) 2008-07-01
US8111567B2 (en) 2012-02-07
US7773436B2 (en) 2010-08-10
TW200837756A (en) 2008-09-16
US20080151660A1 (en) 2008-06-26
US20100302887A1 (en) 2010-12-02
TW201428741A (zh) 2014-07-16
JP2008181634A (ja) 2008-08-07
JP2013178871A (ja) 2013-09-09
TWI442398B (zh) 2014-06-21

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