TWI508220B - 晶粒射出裝置 - Google Patents
晶粒射出裝置 Download PDFInfo
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Description
本發明之具體實施例係關於一種晶粒射出裝置,且更明確地係一種用於將包含半導體元件之複數個晶粒自一晶圓分離出的晶粒射出裝置,以在一半導體製程中將該等晶粒黏著至一基板上。
一般而言,可藉由反覆實施一系列製程,將半導體元件形成於用作為一半導體基板之一矽晶圓上。如上所述形成之半導體元件,可經由一切割製程而分隔,且可經由一黏著製程黏著至基板。
一實施該晶粒黏著製程用裝置包含一拾取模組,用於將複數個晶粒自一晶圓拾取且分離出,該晶圓可劃分為包含半導體元件之該等晶粒,及一黏著模組,用於將一獲拾取半導體元件連附至一基板上。該拾取模組可包含一架台單元,支持由該晶圓連附所至之一晶圓環,及一射出裝置,配置成可直立地運動,以選擇性地自該架台單元所支持之該晶圓分離出一晶粒,及一拾取單元,用於自該晶圓拾取該晶粒且將該晶粒連附至一基板。
一般而言,該晶粒射出裝置可包含一射出單元,用於垂直地抬起該晶圓,以自一切割膠帶分離出該晶粒,一托
座,包含有該射出單元,一驅動單元,使該射出單元直立地運動,及一本體,包含有該驅動單元。韓國專利登記案第10-0975500號及韓國專利公開案第10-2009-0108447號中,已揭露上述晶粒射出裝置之範例。
另一方面,為對應該等晶粒之尺寸而調換該射出單元及托座時,由於對正該射出單元與該托座之旋轉角度及中心需一相當長之時間,因此使用該晶粒射出裝置之晶粒黏著設備的作動率將顯著地降低。
本發明之具體實施例係提供一種晶粒射出裝置,其能夠非常簡單地調換該晶粒射出裝置中之一晶粒射出單元及一托座。
依據本發明之具體實施例,在一種用於將複數個晶粒自該等晶粒連附所至之一切割膠帶射出的晶粒射出裝置中,該晶粒射出裝置可包含一射出單元,選擇性地抬起其中一該等晶粒,以射出該選定晶粒;一托座,具有一內部空間,其包含有該射出單元,且包括一上方嵌板,其具有至少一貫穿孔,以容許該射出單元垂直地運動通過,及一外殼,自該上方嵌板朝下方延伸且具有一下方開口;一驅動單元,與該射出單元相連接,以使該射出單元沿一垂直方向運動;以及一本體,插入該托座之下方開口中且包含有該驅動單元。特別地,該托座與該本體可藉使用一磁力而互相連結。
依據本發明之具體實施例,用於限制該射出單元之朝下方運動的一止動件可設置於該外殼之一內表面上。
依據本發明之具體實施例,用於限制該本體插入該托座中之一程度的一台階部可設置於該本體之一上方外表面上。
依據本發明之具體實施例,用於提供該磁力之一永久磁鐵可設置於該台階部中。
依據本發明之具體實施例,該射出單元與該驅動單元可藉使用一磁力而互相連結。
依據本發明之具體實施例,該驅動單元可包含一頭部,其與該射出單元相連結。特別地,一永久磁鐵可設置於該頭部中,以容許該頭部與該射出單元互相連結。
依據本發明之具體實施例,該射出單元可包含一空氣室,其具有一上方開口,且該射出單元可藉該驅動單元而與該切割膠帶之一底面緊密接觸,及接著可將空氣供應入該空氣室中,以使該切割膠帶朝上方部份地充氣。
依據本發明之具體實施例,該射出單元可藉該驅動單元而朝上方運動,以自該托座之上方嵌板突出而抬起該選定晶粒。
依據本發明之具體實施例,複數個真空孔係設置於該上方嵌板之至少一貫穿孔周圍上,以吸附該切割膠帶。
依據本發明之具體實施例,該射出單元可包含一射出銷,其插入該至少一貫穿孔中,及一支持嵌板,其設置於該托座中,以支持該射出銷。
優良效益
如上所述者,依據該等本發明具體實施例,在用
於將連附至該切割膠帶之該等晶粒射出的該晶粒射出裝置中,該晶粒射出裝置可包含該射出單元、將該射出單元收容於其中之該托座、與該射出單元相連結之該驅動單元、及與該托座相連結之該本體。
該本體可插入該托座之下方開口中,且用於限制該本體插入程度之該台階部可設於該本體之上方部上。特別地,藉使用該磁力而使該托座與該本體相連結之該永久磁鐵,可設置於該台階部中。亦,該射出單元亦可藉使用該磁力而與該驅動單元相連結。
如上所述者,由於該托座與該本體、及該射出單元與該本體係分別藉該磁力而互相連結,因此可非常輕易地實施該射出單元及該托座之替換。亦,由於可藉使用對正溝槽、與對正銷來實施該射出單元與該托座之旋轉角度對正,因此可大幅地縮短替換該射出單元及該托座所使用之時間。
10‧‧‧晶圓
20‧‧‧晶粒
30‧‧‧晶圓環
32‧‧‧切割膠帶
40‧‧‧架台
42‧‧‧夾持件
44‧‧‧延伸環
50‧‧‧拾取裝置
100‧‧‧晶粒射出裝置
110‧‧‧射出單元
112‧‧‧空氣室
120‧‧‧托座
122‧‧‧上方嵌板
122A‧‧‧貫穿孔
122B‧‧‧真空孔
124‧‧‧外殼
126‧‧‧止動件
128‧‧‧對正溝槽
130‧‧‧驅動單元
132‧‧‧頭部
134‧‧‧驅動軸
136‧‧‧永久磁鐵
140‧‧‧本體
142‧‧‧台階部
144‧‧‧對正銷
150‧‧‧磁鐵
170‧‧‧密封元件
172‧‧‧密封元件
180‧‧‧射出單元
182‧‧‧射出銷
184‧‧‧支持嵌板
186‧‧‧永久磁鐵
190‧‧‧托座
192A‧‧‧貫穿孔
194‧‧‧外殼
第1圖係圖示出,使用依據本發明一具體實施例之一晶粒射出裝置的一晶粒黏著裝置概略視圖;第2圖及第3圖係圖示出,第1圖晶粒射出裝置之概略剖視圖;第4圖及第5圖係圖示出,藉使用第2圖晶粒射出裝置射出一晶粒之一方法概略剖視圖;第6圖係圖示出,第2圖所顯示之一托座與一射出單元立體圖;
第7圖係圖示出,將該射出單元自第2圖所顯示托座朝上方抬昇之一狀態立體圖;第8圖係圖示出該托座及第2圖所顯示本體之一側視圖;第9圖係圖示出第2圖射出單元另一範例之概略剖視圖;第10圖係圖示出,第9圖所顯示之一托座與一射出單元立體圖;及第11圖係圖示出,將複數個射出銷自第9圖所顯示托座朝上方抬昇之一狀態立體圖。
此後將參考隨附圖式,詳細地說明本發明之具體實施例。然而,本發明並非由以下所述之具體實施例限制,且可依不同於此之各式具體實施。提供以下具體實施例係為使熟於本項技藝者完全了解本發明之範疇,而非完整地完成本發明。
當說明某一元件係設置於另一元件或一層之上、或與其相連接,則該元件可直接設置於其他一元件之上、或與其直接相連接,或著有其他多個元件或層可設置於該等者之間。不同地,當說明某一元件係直接設置於另一元件之上、或與其直接相連接,則不存有其他元件。為說明各元件、組件、區域、層、及/或部件,可使用第一、第二、第三、及相似者等詞語。然而,該等元件、組件、區域、層、及/或部件並非以此為限。
以下之技術詞語係用於說明解說用具體實施例,而並非用於限制本發明。另一選擇,倘作不同定義,則包含技
術與科學詞語之所有詞語,皆具有熟於本項技藝者可了解之相同意義。如普通字典中所定義之詞語可理解為,具有完全相同於其在相關技藝與本發明說明中取決上下文意之意義。倘無明確限制,則不可理想地或過度地以表面直觀理解該等詞語。
將參考解說用具體實施例之概略視圖來說明本發明之具體實施例。依此,可充分地預期譬如視圖外形之變異、製造方法之變異、及/或可容許誤差。緣是,本發明具體實施例之說明,並非將發明限制於視圖中所圖示之特定區域外形,而可包含外形之偏差,且視圖中所圖示之區域係呈大致概略、及其外形並非描繪該等區域之確切外形又亦未限制本發明之範疇。
第1圖係圖示出,使用依據本發明一具體實施例之一晶粒射出裝置100的一晶粒黏著裝置概略視圖,且第2圖及第3圖係圖示出晶粒射出裝置100之概略剖視圖。
請參考第1圖至第3圖,晶粒射出裝置100可用於一晶粒黏著製程中,該製程係將包含半導體元件之複數個晶粒20自晶粒20所組成之一晶圓10分離出,且將晶粒20黏著至一基板。特別地,晶圓10可設為,連附至一切割膠帶32,且切割膠帶32可安裝於一晶圓環30上,該晶圓環具有較晶圓10者大之一直徑。
晶圓環30可由設置於一架台40上之一夾持件42緊夾,且切割膠帶32之一邊緣部可由設置於架台40上之一延伸環44支持。夾持件42可使晶圓環30朝下方垂直運動,以使切割膠帶32延展,藉此可由延伸環44使切割膠帶32延展。
結果,連附至切割膠帶32之該等晶粒20間距將可擴展。
晶粒射出裝置100可設置於架台40下方,選擇性地抬起晶粒20,以使晶粒20與切割膠帶32分離,且一拾取裝置50可設置於架台40上方,以拾取藉晶粒射出裝置100抬起之晶粒20。
請參考第2圖及第3圖,晶粒射出裝置100可用於使晶粒20自切割膠帶32射出。
依據本具體實施例,晶粒射出裝置100可包含一射出單元110,用於朝上方抬起晶粒20,一托座120,包含有射出單元110,一驅動單元130,使射出單元110朝上方運動,及一本體140,包含有驅動單元130。
選擇性地射出其中一該等晶粒20之射出單元110,可抬起選定之晶粒20。驅動單元130可包含一頭部132,其與射出單元110相連結,及一驅動軸134,用於傳遞驅動力。儘管未詳細地顯示出,然驅動軸134可連接至一提供驅動力用驅動力供應單元(未顯示),且該驅動力供應單元可藉使用一馬達、一汽缸、複數個驅動力傳遞元件、及相似物、並藉各種方法而配置。
托座120可具有一內部空間,其包含有射出單元110。例如,托座120可包含一上方嵌板122,其具有至少一貫穿孔122A,以容許射出單元110沿一垂直方向運動,及一外殼124,自上方嵌板122朝下延伸且具有一下方開口。
外殼124之下方開口可與本體140相連結,且驅動單元130之頭部132及驅動軸134可在本體140中沿垂直方
向運動。
例如,托座120之外殼124與本體140可具有近似圓管型。然而,本發明之範疇並非以外殼124與本體140之外型為限。
本體140之一上方部可插入外殼124之下方部中,且如圖式所顯示者,可將一台階部142設置於本體140之一上方外表面上,用於限制本體140之一插入程度。
另一方面,用於限制射出單元110之朝下方運動的一止動件126,可設置於外殼124之一內表面上。射出單元110在托座120中之水平運動可由上方嵌板122之貫穿孔122A限制,且僅容許其之垂直運動。特別地,射出單元110之朝上方運動可由上方嵌板122限制,且其之朝下方運動可由止動件126限制。結果,僅可容許射出單元110在托座120中垂直運動達一既定距離,且倘必要時,可將射出單元110與托座120一同替換。
依據本具體實施例,當需替換射出單元110,以對應晶粒20之尺寸變異時,可替換托座120與射出單元110二者。特別地,可對應各別晶粒20,預先備妥射出單元110與托座120所形成之可替換組,且可依據一對應晶粒20之尺寸,選擇性地使用射出單元110及托座120。
亦,可將用於連結托座120與本體140之一結構、及用於連結射出單元110與驅動單元130之一結構配置成,能夠更簡單地實施射出單元110及托座120之替換。
依據本具體實施例,可藉使用一磁力,以使托座
120之外殼124與本體140互相連結。例如,可將一磁鐵150設置於本體140之台階部142中,以容許托座120與本體140藉使用一磁力而互相連結。例如,如圖式所顯示者,可將複數個永久磁鐵150嵌於台階部142之一頂面下方中。然而,另一選擇為,可使永久磁鐵150自台階部142頂面曝露出。在這種情況下,托座120之外殼124可由一磁性材料形成,且亦,本體140之上方部可由一非磁性材料形成。
另一方面,永久磁鐵150可大大地增加一緊密接觸程度、及外殼124一底面與台階部142頂面之間的一平行化程度,且可藉使用該磁力穩定地保持托座120與本體140之間的一連結狀態。緣是,可在該晶粒射出製程中穩定地射出晶粒20。
依據本發明之另一具體實施例,對應於本體140永久磁鐵150之複數個額外永久磁鐵(未顯示)可裝設於托座120之外殼124中。在這種情況下,托座120之外殼124與本體140之上方部二者,可由非磁性材料形成。
亦,依據本具體實施例,射出單元110與驅動單元130亦可藉使用一磁力而互相連結。例如,用於藉使用一磁力固持射出單元110之複數個永久磁鐵136,可嵌於驅動單元130之頭部132中,且射出單元110可由一磁性材料形成。亦,另一選擇為,對應於頭部132永久磁鐵136之複數個永久磁鐵(未顯示),可嵌於射出單元110中。
另一方面,射出單元110可具有一空氣室112,其具有一上方開口。可將空氣供應入空氣室112中,以容許輕易
地射出選定晶粒20。
第4圖及第5圖係圖示出,藉使用晶粒射出裝置100射出一晶粒之一方法概略剖視圖,第6圖係圖示出托座120與射出單元110之立體圖,及第7圖係圖示出射出單元110自托座120朝上方運動之一狀態立體圖。
請參考第4圖至第7圖,圖式中未顯示出,晶粒射出裝置100可藉一額外驅動單元(未顯示)而朝上方運動,使托座120之上方嵌板122可與切割膠帶32之一底面緊密接觸。
接續地,可藉驅動單元130使射出單元110自上方嵌板122之一頂面朝上方運動而突出,如第4圖所顯示者,藉以連同切割膠帶32朝上方抬起選定之晶粒20。在這種情況下,可將用於吸附一部份切割膠帶32之複數個真空孔122B設於上方嵌板122上。
例如,如圖式所顯示者,該複數個真空孔122B可環繞貫穿孔122A設置,射出單元110係設置於該貫穿孔中,且可吸附設置於選定晶粒20周圍上之該部份切割膠帶32。如此將藉由吸附設置於選定晶粒20周圍上之該部份切割膠帶32,而容許輕易地使選定晶粒20與切割膠帶32分離。
特別地,如第4圖所顯示者,當射出單元110之一上方部自上方嵌板122朝上方突出時,選定晶粒20之一邊緣部將與切割膠帶32分離。
接續地,如第5圖所顯示者,當空氣供應入空氣室112中時,由於射出單元110之一頂面係與切割膠帶32之底面緊密接觸,因此位於射出單元110空氣室112上之切割膠
帶32一部將可充氣,藉以容許選定晶粒20逐漸與切割膠帶32分離。
另一方面,該空氣可經由驅動軸134與頭部132供應入空氣室112中,且可經由本體140將一真空提供至托座120中。在這種情況下,如圖式所顯示者,複數個密封元件170及172可分別設置於本體140與外殼124、及射出單元110與頭部132之間。
另一方面,如第6圖及第7圖所顯示者,可在托座120之一頂面上形成一識別線,其具有一筆直線型或一十字型,且可用於在替換托座120及射出單元110時,使用一視覺模組作中心對正。
第8圖係圖示出托座120及本體140之一側視圖。
請參考第8圖,用於托座120與射出單元110旋轉角度對正之一對正銷144,可設置於本體140之一上方外表面上,且與其相對應、可由對正銷144插入其中之一對正溝槽128,可形成於托座120之下方開口部中。
如上所述者,依據本具體實施例,由於托座120係藉設置於本體140台階部142中之永久磁鐵150而與本體140相連結,因此可非常輕易地實施托座120之替換。亦,在替換托座120及射出單元110時,可使用對正銷144及對正溝槽128而非常輕易地實施旋轉角度對正,藉以大幅地縮短替換托座120及射出單元110所耗費之時間。
特別地,依據本具體實施例,可依據晶粒20之種類,預先備妥複數個托座120與射出單元110組,當需替換時,
即可在一短時間內實施托座120及射出單元110之替換。結果,由於替換托座120與射出單元110組所使用之時間可縮短,因此包含晶粒射出裝置100之晶粒黏著設備的作動率將可提高。
第9圖係圖示出依據本發明另一具體實施例之一射出單元180概略剖視圖,第10圖係圖示出一托座190及射出單元180之一立體圖,及第11圖係圖示出複數個射出銷182自托座190朝上方運動之一狀態立體圖。
請參考第9圖至第11圖,依據本發明之另一具體實施例,射出單元180可包含於托座190中,該托座包含一上方嵌板192及一外殼194,且該射出單元可包含射出銷182,插入形成於托座190上方嵌板192中之複數個貫穿孔192A中,及一支持嵌板184,設置於托座190中且支持著射出銷182。
支持嵌板184係如圖式所顯示者,可包含一永久磁鐵186,與設置於驅動單元130頭部132中之永久磁鐵136相對應,且射出單元180與頭部132可藉永久磁鐵136與186所生成之一磁力而互相連結。亦,射出銷182亦可藉嵌於支持嵌板184中之永久磁鐵186磁力,而與支持嵌板184相連結。
另一方面,如第10圖所顯示者,可在托座190之一頂面上提供一識別線,其具有一筆直線型或一十字型,且可用於在替換托座190及射出單元180時,使用一視覺模組作中心對正。特別地,在依據晶粒20之種類準備複數組時,該識別線可用於決定射出銷182插入所在之位置。亦即,在準備該等組之製程中,可預先備妥托座190中之射出單元180支持嵌
板184。在這種情況下,該識別線可用於決定射出銷182插入貫穿孔192A所在之位置。
如上所述者,由於射出銷182係藉插入托座190中之既定位置而備妥,因此替換托座190及射出單元180所使用之時間可更為縮短。
如上所述者,依據本發明之具體實施例,在用於將連附至切割膠帶32之晶粒20射出的晶粒射出裝置100中,晶粒射出裝置100可包含射出單元110、將射出單元110收容於其中之托座120、與射出單元110相連結之驅動單元130、及與托座120相連結之本體140。
本體140可插入托座120之下方開口中,且用於限制本體140插入程度之台階部142可設於本體140之上方部上。特別地,藉使用磁力而將托座120與本體140相連結之磁鐵150,可設置於台階部142中。亦,射出單元110亦可藉使用磁力而與驅動單元130相連結。
如上所述者,由於托座120與本體140、及射出單元110與本體140係分別藉磁力而互相連結,因此可非常輕易地實施射出單元110及托座120之替換。亦,由於可藉使用對正溝槽128與對正銷144來實施射出單元110與托座120之旋轉角度對正,因此可大幅地縮短替換射出單元110及托座120所使用之時間。
儘管已參考解說用具體實施例特別地顯示及說明本發明,然熟於本項技藝者將可了解到,可對其中實施各式變更及細部設計,而不致脫離以下申請專利範圍所界定之本發明
精神與範疇。
100‧‧‧晶粒射出裝置
110‧‧‧射出單元
112‧‧‧空氣室
120‧‧‧托座
122‧‧‧上方嵌板
122A‧‧‧貫穿孔
122B‧‧‧真空孔
124‧‧‧外殼
126‧‧‧止動件
130‧‧‧驅動單元
132‧‧‧頭部
134‧‧‧驅動軸
140‧‧‧本體
150‧‧‧磁鐵
170‧‧‧密封元件
172‧‧‧密封元件
Claims (10)
- 一種用於將複數個晶粒自該等晶粒連附所至之一切割膠帶射出的晶粒射出裝置,該晶粒射出裝置包括:一射出單元,選擇性地抬起其中一該等晶粒,以射出該選定晶粒;一托座,具有一內部空間,其包含有該射出單元,且包括一上方嵌板,其具有至少一貫穿孔,以容許該射出單元垂直地運動通過,及一外殼,自該上方嵌板朝下方延伸且具有一下方開口;一驅動單元,與該射出單元相連接,以使該射出單元沿一垂直方向運動;及一本體,插入該托座之下方開口中且包含有該驅動單元,其中該托座與該本體係藉使用一磁力而互相連結。
- 如申請專利範圍第1項所述之晶粒射出裝置,其中用於限制該射出單元之朝下方運動的一止動件係設置於該外殼之一內表面上。
- 如申請專利範圍第1項所述之晶粒射出裝置,其中用於限制該本體插入該托座中之一程度的一台階部係設置於該本體之一上方外表面上。
- 如申請專利範圍第3項所述之晶粒射出裝置,其中用於提供該磁力之一永久磁鐵係設置於該台階部中。
- 如申請專利範圍第1項所述之晶粒射出裝置,其中該射出單元與該驅動單元係藉使用一磁力而互相連結。
- 如申請專利範圍第5項所述之晶粒射出裝置,其中該驅動 單元包括一頭部,其與該射出單元相連結,及其中一永久磁鐵係設置於該頭部中,以容許該頭部與該射出單元互相連結。
- 如申請專利範圍第1項所述之晶粒射出裝置,其中該射出單元包括一空氣室,其具有一上方開口,且該射出單元係藉該驅動單元而與該切割膠帶之一底面緊密接觸,及接著將空氣供應入該空氣室中,以使該切割膠帶朝上方部份地充氣。
- 如申請專利範圍第7項所述之晶粒射出裝置,其中該射出單元係藉該驅動單元而朝上方運動,以自該托座之上方嵌板突出而抬起該選定晶粒。
- 如申請專利範圍第7項所述之晶粒射出裝置,其中複數個真空孔係設置於該上方嵌板之至少一貫穿孔周圍上,以吸附該切割膠帶。
- 如申請專利範圍第1項所述之晶粒射出裝置,其中該射出單元包括:一射出銷,其插入該至少一貫穿孔中;及一支持嵌板,其設置於該托座中,以支持該射出銷。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201001614A (en) * | 2008-06-30 | 2010-01-01 | Shinkawa Kk | Semiconductor die pickup apparatus and semiconductor die pickup method |
TW201011857A (en) * | 2008-09-02 | 2010-03-16 | Gallant Prec Machining Co Ltd | Peeling off method and device |
TW201124321A (en) * | 2010-01-11 | 2011-07-16 | Asm Assembly Automation Ltd | Flanged collet for die pick-up tool |
US20110214282A1 (en) * | 2010-03-05 | 2011-09-08 | Ping Kong Choy | Actuator for maintaining alignment of die detachment tools |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970005492Y1 (ko) * | 1994-03-12 | 1997-06-05 | 현대전자산업 주식회사 | 반도체 칩 이젝터장치 |
JP3498877B2 (ja) * | 1995-12-05 | 2004-02-23 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
US7306695B2 (en) * | 2003-04-10 | 2007-12-11 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for picking up semiconductor chip |
US7665204B2 (en) * | 2006-10-16 | 2010-02-23 | Asm Assembly Automation Ltd. | Die detachment apparatus comprising pre-peeling structure |
JP4985513B2 (ja) * | 2008-03-26 | 2012-07-25 | 富士通セミコンダクター株式会社 | 電子部品の剥離方法及び剥離装置 |
KR100975500B1 (ko) * | 2008-07-14 | 2010-08-11 | 세미텍 주식회사 | 다이본딩장비의 다이 이젝팅장치 |
KR20110090553A (ko) * | 2010-02-04 | 2011-08-10 | 한미반도체 주식회사 | 다이 본딩 장비의 이젝팅 장치 |
JP5598205B2 (ja) * | 2010-09-22 | 2014-10-01 | トヨタ自動車株式会社 | ソケットクイック交換アダプタ |
-
2012
- 2012-08-31 KR KR2020120007791U patent/KR200468690Y1/ko active IP Right Grant
-
2013
- 2013-07-31 TW TW102127399A patent/TWI508220B/zh active
- 2013-08-30 CN CN201310390738.9A patent/CN103681411B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201001614A (en) * | 2008-06-30 | 2010-01-01 | Shinkawa Kk | Semiconductor die pickup apparatus and semiconductor die pickup method |
TW201011857A (en) * | 2008-09-02 | 2010-03-16 | Gallant Prec Machining Co Ltd | Peeling off method and device |
TW201124321A (en) * | 2010-01-11 | 2011-07-16 | Asm Assembly Automation Ltd | Flanged collet for die pick-up tool |
US20110214282A1 (en) * | 2010-03-05 | 2011-09-08 | Ping Kong Choy | Actuator for maintaining alignment of die detachment tools |
Also Published As
Publication number | Publication date |
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CN103681411B (zh) | 2016-09-14 |
KR200468690Y1 (ko) | 2013-08-29 |
TW201426903A (zh) | 2014-07-01 |
CN103681411A (zh) | 2014-03-26 |
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