TWI507575B - 氧化銦－氧化鋅-氧化鎂系濺鍍靶及透明導電膜 - Google Patents
氧化銦－氧化鋅-氧化鎂系濺鍍靶及透明導電膜 Download PDFInfo
- Publication number
- TWI507575B TWI507575B TW102106926A TW102106926A TWI507575B TW I507575 B TWI507575 B TW I507575B TW 102106926 A TW102106926 A TW 102106926A TW 102106926 A TW102106926 A TW 102106926A TW I507575 B TWI507575 B TW I507575B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide
- transparent conductive
- conductive film
- sputtering target
- target
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims description 66
- XBJOBWPPZLJOLG-UHFFFAOYSA-N [O-2].[Mg+2].[O-2].[In+3].[O-2].[Zn+2] Chemical compound [O-2].[Mg+2].[O-2].[In+3].[O-2].[Zn+2] XBJOBWPPZLJOLG-UHFFFAOYSA-N 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 91
- 239000011701 zinc Substances 0.000 claims description 84
- 239000011777 magnesium Substances 0.000 claims description 65
- 239000011787 zinc oxide Substances 0.000 claims description 45
- 229910003437 indium oxide Inorganic materials 0.000 claims description 40
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 40
- 239000000395 magnesium oxide Substances 0.000 claims description 34
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 34
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 21
- 229910052749 magnesium Inorganic materials 0.000 claims description 19
- 229910017976 MgO 4 Inorganic materials 0.000 claims description 17
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 13
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 139
- 238000002834 transmittance Methods 0.000 description 46
- 239000000843 powder Substances 0.000 description 42
- 238000004544 sputter deposition Methods 0.000 description 36
- 239000000203 mixture Substances 0.000 description 32
- 239000002245 particle Substances 0.000 description 18
- 239000002253 acid Substances 0.000 description 17
- 238000005054 agglomeration Methods 0.000 description 15
- 230000002776 aggregation Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 11
- 239000011135 tin Substances 0.000 description 11
- 238000009616 inductively coupled plasma Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 238000004993 emission spectroscopy Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910020203 CeO Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004125429A JP4488184B2 (ja) | 2004-04-21 | 2004-04-21 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201341603A TW201341603A (zh) | 2013-10-16 |
| TWI507575B true TWI507575B (zh) | 2015-11-11 |
Family
ID=35197011
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094109151A TWI394872B (zh) | 2004-04-21 | 2005-03-24 | 氧化銦-氧化鋅-氧化鎂系濺鍍靶及透明導電膜 |
| TW102106926A TWI507575B (zh) | 2004-04-21 | 2005-03-24 | 氧化銦－氧化鋅-氧化鎂系濺鍍靶及透明導電膜 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094109151A TWI394872B (zh) | 2004-04-21 | 2005-03-24 | 氧化銦-氧化鋅-氧化鎂系濺鍍靶及透明導電膜 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4488184B2 (ja) |
| KR (1) | KR101168447B1 (ja) |
| CN (1) | CN100564579C (ja) |
| TW (2) | TWI394872B (ja) |
| WO (1) | WO2005103320A1 (ja) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4488184B2 (ja) * | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
| JP5000131B2 (ja) * | 2005-12-26 | 2012-08-15 | 出光興産株式会社 | 透明電極膜及び電子機器 |
| JP4816137B2 (ja) * | 2006-02-24 | 2011-11-16 | 住友金属鉱山株式会社 | 透明導電膜及び透明導電性基材 |
| JP4986118B2 (ja) * | 2006-06-23 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 透明電極の形成方法 |
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| JP5143410B2 (ja) * | 2006-12-13 | 2013-02-13 | 出光興産株式会社 | スパッタリングターゲットの製造方法 |
| CN103320755A (zh) | 2006-12-13 | 2013-09-25 | 出光兴产株式会社 | 溅射靶及氧化物半导体膜 |
| JP5520496B2 (ja) * | 2008-02-19 | 2014-06-11 | 昭和電工株式会社 | 太陽電池の製造方法 |
| WO2009147969A1 (ja) * | 2008-06-03 | 2009-12-10 | 日鉱金属株式会社 | スパッタリングターゲット及び非晶質性光学薄膜 |
| KR101346472B1 (ko) * | 2008-06-06 | 2014-01-02 | 이데미쓰 고산 가부시키가이샤 | 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법 |
| TWI473896B (zh) | 2008-06-27 | 2015-02-21 | Idemitsu Kosan Co | From InGaO 3 (ZnO) crystal phase, and a method for producing the same |
| US8529802B2 (en) | 2009-02-13 | 2013-09-10 | Samsung Electronics Co., Ltd. | Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition |
| US8319300B2 (en) | 2009-04-09 | 2012-11-27 | Samsung Electronics Co., Ltd. | Solution composition for forming oxide thin film and electronic device including the oxide thin film |
| KR101274279B1 (ko) | 2009-10-06 | 2013-06-13 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 산화인듐 소결체, 산화인듐 투명 도전막 및 그 투명 도전막의 제조 방법 |
| JP5494082B2 (ja) * | 2010-03-23 | 2014-05-14 | 住友電気工業株式会社 | 導電性酸化物とその製造方法 |
| JP5101719B2 (ja) | 2010-11-05 | 2012-12-19 | 日東電工株式会社 | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
| JP5122670B2 (ja) * | 2010-11-05 | 2013-01-16 | 日東電工株式会社 | 透明導電性フィルムの製造方法 |
| JP5651095B2 (ja) | 2010-11-16 | 2015-01-07 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット |
| KR20140027241A (ko) * | 2011-05-10 | 2014-03-06 | 이데미쓰 고산 가부시키가이샤 | In₂O₃-ZnO계 스퍼터링 타겟 |
| US9039944B2 (en) | 2011-07-06 | 2015-05-26 | Idemitsu Kosan Co., Ltd. | Sputtering target |
| JP5318932B2 (ja) * | 2011-11-04 | 2013-10-16 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
| JP5337224B2 (ja) * | 2011-11-04 | 2013-11-06 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
| US8927986B2 (en) * | 2012-09-28 | 2015-01-06 | Industrial Technology Research Institute | P-type metal oxide semiconductor |
| JP5947697B2 (ja) * | 2012-10-19 | 2016-07-06 | 出光興産株式会社 | スパッタリングターゲット |
| CN104291792A (zh) * | 2014-09-28 | 2015-01-21 | 桂林电子科技大学 | 一种氧化物陶瓷靶材及其制备方法 |
| JP6398624B2 (ja) * | 2014-11-06 | 2018-10-03 | Tdk株式会社 | 透明導電体及びタッチパネル |
| JP7549311B2 (ja) | 2019-11-08 | 2024-09-11 | 出光興産株式会社 | 積層体及び半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11297478A (ja) * | 1998-04-09 | 1999-10-29 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
| TWI394872B (zh) * | 2004-04-21 | 2013-05-01 | Idemitsu Kosan Co | 氧化銦-氧化鋅-氧化鎂系濺鍍靶及透明導電膜 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3827334B2 (ja) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ｉｔｏ焼結体及びスパッタリングターゲット |
| EP2610230A2 (en) * | 1998-08-31 | 2013-07-03 | Idemitsu Kosan Co., Ltd. | Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass, and transparent electroconductive film |
| JP4424889B2 (ja) * | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| TW570909B (en) * | 2001-06-26 | 2004-01-11 | Mitsui Mining & Smelting Co | Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance |
| KR101902048B1 (ko) * | 2001-07-17 | 2018-09-27 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 및 투명 도전막 |
| JP2004149883A (ja) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| JP2005272946A (ja) * | 2004-03-25 | 2005-10-06 | Sumitomo Metal Mining Co Ltd | 誘電体膜用の複合焼結ターゲット材とその製造方法 |
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2004
- 2004-04-21 JP JP2004125429A patent/JP4488184B2/ja not_active Expired - Fee Related
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2005
- 2005-02-23 KR KR1020067021853A patent/KR101168447B1/ko not_active IP Right Cessation
- 2005-02-23 CN CNB2005800097523A patent/CN100564579C/zh not_active Expired - Fee Related
- 2005-02-23 WO PCT/JP2005/002903 patent/WO2005103320A1/ja active Application Filing
- 2005-03-24 TW TW094109151A patent/TWI394872B/zh not_active IP Right Cessation
- 2005-03-24 TW TW102106926A patent/TWI507575B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11297478A (ja) * | 1998-04-09 | 1999-10-29 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
| TWI394872B (zh) * | 2004-04-21 | 2013-05-01 | Idemitsu Kosan Co | 氧化銦-氧化鋅-氧化鎂系濺鍍靶及透明導電膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070006854A (ko) | 2007-01-11 |
| WO2005103320A1 (ja) | 2005-11-03 |
| CN101124348A (zh) | 2008-02-13 |
| JP2005307269A (ja) | 2005-11-04 |
| TWI394872B (zh) | 2013-05-01 |
| KR101168447B1 (ko) | 2012-07-25 |
| JP4488184B2 (ja) | 2010-06-23 |
| TW200535283A (en) | 2005-11-01 |
| TW201341603A (zh) | 2013-10-16 |
| CN100564579C (zh) | 2009-12-02 |
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