CN100564579C - 氧化铟-氧化锌-氧化镁类溅射靶及透明导电膜 - Google Patents
氧化铟-氧化锌-氧化镁类溅射靶及透明导电膜 Download PDFInfo
- Publication number
- CN100564579C CN100564579C CNB2005800097523A CN200580009752A CN100564579C CN 100564579 C CN100564579 C CN 100564579C CN B2005800097523 A CNB2005800097523 A CN B2005800097523A CN 200580009752 A CN200580009752 A CN 200580009752A CN 100564579 C CN100564579 C CN 100564579C
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- Prior art keywords
- nesa coating
- unit volume
- oxide
- sputtering target
- addition
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 67
- XBJOBWPPZLJOLG-UHFFFAOYSA-N [O-2].[Mg+2].[O-2].[In+3].[O-2].[Zn+2] Chemical compound [O-2].[Mg+2].[O-2].[In+3].[O-2].[Zn+2] XBJOBWPPZLJOLG-UHFFFAOYSA-N 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 97
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000011787 zinc oxide Substances 0.000 claims abstract description 49
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 36
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 36
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims description 123
- 238000000576 coating method Methods 0.000 claims description 123
- 239000011701 zinc Substances 0.000 claims description 88
- 239000011777 magnesium Substances 0.000 claims description 67
- 239000013078 crystal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910044991 metal oxide Inorganic materials 0.000 claims description 29
- 150000004706 metal oxides Chemical class 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 23
- 238000002441 X-ray diffraction Methods 0.000 claims description 22
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 229910017976 MgO 4 Inorganic materials 0.000 claims description 17
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 14
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 28
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 description 42
- 239000000843 powder Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 37
- 230000035515 penetration Effects 0.000 description 35
- 239000002253 acid Substances 0.000 description 17
- 238000005245 sintering Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 11
- 238000009616 inductively coupled plasma Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000007493 shaping process Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 238000004445 quantitative analysis Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000000803 paradoxical effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP125429/2004 | 2004-04-21 | ||
| JP2004125429A JP4488184B2 (ja) | 2004-04-21 | 2004-04-21 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101124348A CN101124348A (zh) | 2008-02-13 |
| CN100564579C true CN100564579C (zh) | 2009-12-02 |
Family
ID=35197011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800097523A Expired - Fee Related CN100564579C (zh) | 2004-04-21 | 2005-02-23 | 氧化铟-氧化锌-氧化镁类溅射靶及透明导电膜 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4488184B2 (ja) |
| KR (1) | KR101168447B1 (ja) |
| CN (1) | CN100564579C (ja) |
| TW (2) | TWI507575B (ja) |
| WO (1) | WO2005103320A1 (ja) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4488184B2 (ja) * | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
| JP5000131B2 (ja) * | 2005-12-26 | 2012-08-15 | 出光興産株式会社 | 透明電極膜及び電子機器 |
| JP4816137B2 (ja) * | 2006-02-24 | 2011-11-16 | 住友金属鉱山株式会社 | 透明導電膜及び透明導電性基材 |
| JP4986118B2 (ja) * | 2006-06-23 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 透明電極の形成方法 |
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| CN103320755A (zh) * | 2006-12-13 | 2013-09-25 | 出光兴产株式会社 | 溅射靶及氧化物半导体膜 |
| JP5143410B2 (ja) * | 2006-12-13 | 2013-02-13 | 出光興産株式会社 | スパッタリングターゲットの製造方法 |
| JP5520496B2 (ja) * | 2008-02-19 | 2014-06-11 | 昭和電工株式会社 | 太陽電池の製造方法 |
| JP5329537B2 (ja) * | 2008-06-03 | 2013-10-30 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット及び非晶質性光学薄膜 |
| JP5288142B2 (ja) * | 2008-06-06 | 2013-09-11 | 出光興産株式会社 | 酸化物薄膜用スパッタリングターゲットおよびその製造法 |
| KR20110027805A (ko) * | 2008-06-27 | 2011-03-16 | 이데미쓰 고산 가부시키가이샤 | ＩｎＧａＯ３（ＺｎＯ） 결정상을 포함하는 산화물 반도체용 스퍼터링 타겟 및 그의 제조 방법 |
| US8529802B2 (en) | 2009-02-13 | 2013-09-10 | Samsung Electronics Co., Ltd. | Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition |
| US8319300B2 (en) | 2009-04-09 | 2012-11-27 | Samsung Electronics Co., Ltd. | Solution composition for forming oxide thin film and electronic device including the oxide thin film |
| JP5349587B2 (ja) * | 2009-10-06 | 2013-11-20 | Ｊｘ日鉱日石金属株式会社 | 酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法 |
| JP5494082B2 (ja) * | 2010-03-23 | 2014-05-14 | 住友電気工業株式会社 | 導電性酸化物とその製造方法 |
| JP5122670B2 (ja) * | 2010-11-05 | 2013-01-16 | 日東電工株式会社 | 透明導電性フィルムの製造方法 |
| JP5101719B2 (ja) | 2010-11-05 | 2012-12-19 | 日東電工株式会社 | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
| JP5651095B2 (ja) | 2010-11-16 | 2015-01-07 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット |
| US20140102892A1 (en) * | 2011-05-10 | 2014-04-17 | Idemitsu Kosan Co., Ltd. | In2o3-zno sputtering target |
| KR20140041675A (ko) | 2011-07-06 | 2014-04-04 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 |
| JP5318932B2 (ja) * | 2011-11-04 | 2013-10-16 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
| JP5337224B2 (ja) * | 2011-11-04 | 2013-11-06 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
| TWI495615B (zh) * | 2012-09-28 | 2015-08-11 | Ind Tech Res Inst | ｐ型金屬氧化物半導體材料 |
| JP5947697B2 (ja) * | 2012-10-19 | 2016-07-06 | 出光興産株式会社 | スパッタリングターゲット |
| CN104291792A (zh) * | 2014-09-28 | 2015-01-21 | 桂林电子科技大学 | 一种氧化物陶瓷靶材及其制备方法 |
| JP6398624B2 (ja) * | 2014-11-06 | 2018-10-03 | Tdk株式会社 | 透明導電体及びタッチパネル |
| CN114730819A (zh) * | 2019-11-08 | 2022-07-08 | 出光兴产株式会社 | 层叠体和半导体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287545A (zh) * | 1998-08-31 | 2001-03-14 | 出光兴产株式会社 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
| CN1397661A (zh) * | 2001-06-26 | 2003-02-19 | 三井金属矿业株式会社 | 高电阻透明导电膜用溅射靶及高电阻透明导电膜的制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3827334B2 (ja) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ｉｔｏ焼結体及びスパッタリングターゲット |
| JP4837811B2 (ja) * | 1998-04-09 | 2011-12-14 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
| JP4424889B2 (ja) * | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| KR101902048B1 (ko) * | 2001-07-17 | 2018-09-27 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 및 투명 도전막 |
| JP2004149883A (ja) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| JP2005272946A (ja) * | 2004-03-25 | 2005-10-06 | Sumitomo Metal Mining Co Ltd | 誘電体膜用の複合焼結ターゲット材とその製造方法 |
| JP4488184B2 (ja) * | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
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2004
- 2004-04-21 JP JP2004125429A patent/JP4488184B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-23 CN CNB2005800097523A patent/CN100564579C/zh not_active Expired - Fee Related
- 2005-02-23 WO PCT/JP2005/002903 patent/WO2005103320A1/ja active Application Filing
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287545A (zh) * | 1998-08-31 | 2001-03-14 | 出光兴产株式会社 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
| CN1397661A (zh) * | 2001-06-26 | 2003-02-19 | 三井金属矿业株式会社 | 高电阻透明导电膜用溅射靶及高电阻透明导电膜的制造方法 |
Non-Patent Citations (2)
| Title |
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| New transparent conducting MgIn2O4-Zn2In2O5 thinfilms prepared by magnetron sputtering. T.Minami et al.Thin Solid Films. 1995 * |
| Ozone gas sensors with high sensitivityusing Zn2In2O5-MgIn2O4 multicomponent oxide thin film. Toshihiro Miyata et al.Surface and Coatings Technology. 2000 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201341603A (zh) | 2013-10-16 |
| KR20070006854A (ko) | 2007-01-11 |
| CN101124348A (zh) | 2008-02-13 |
| TW200535283A (en) | 2005-11-01 |
| WO2005103320A1 (ja) | 2005-11-03 |
| TWI507575B (zh) | 2015-11-11 |
| KR101168447B1 (ko) | 2012-07-25 |
| JP4488184B2 (ja) | 2010-06-23 |
| JP2005307269A (ja) | 2005-11-04 |
| TWI394872B (zh) | 2013-05-01 |
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