TWI495613B - 高級氫矽烷之製法 - Google Patents

高級氫矽烷之製法 Download PDF

Info

Publication number
TWI495613B
TWI495613B TW099133065A TW99133065A TWI495613B TW I495613 B TWI495613 B TW I495613B TW 099133065 A TW099133065 A TW 099133065A TW 99133065 A TW99133065 A TW 99133065A TW I495613 B TWI495613 B TW I495613B
Authority
TW
Taiwan
Prior art keywords
catalyst
support
reaction
hydrooxane
oxide
Prior art date
Application number
TW099133065A
Other languages
English (en)
Chinese (zh)
Other versions
TW201129502A (en
Inventor
尼可 布勞奇
蓋得 史達克諾爾
湯瑪斯 昆特
Original Assignee
贏創德固賽有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 贏創德固賽有限責任公司 filed Critical 贏創德固賽有限責任公司
Publication of TW201129502A publication Critical patent/TW201129502A/zh
Application granted granted Critical
Publication of TWI495613B publication Critical patent/TWI495613B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0201—Impregnation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/24—Chromium, molybdenum or tungsten
    • B01J23/26—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/78—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with alkali- or alkaline earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B01J23/868—Chromium copper and chromium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW099133065A 2009-10-02 2010-09-29 高級氫矽烷之製法 TWI495613B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009048087A DE102009048087A1 (de) 2009-10-02 2009-10-02 Verfahren zur Herstellung höherer Hydridosilane

Publications (2)

Publication Number Publication Date
TW201129502A TW201129502A (en) 2011-09-01
TWI495613B true TWI495613B (zh) 2015-08-11

Family

ID=43063916

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099133065A TWI495613B (zh) 2009-10-02 2010-09-29 高級氫矽烷之製法

Country Status (8)

Country Link
US (1) US8709369B2 (https=)
EP (1) EP2482976B1 (https=)
JP (1) JP2013506541A (https=)
KR (1) KR20120081996A (https=)
CN (1) CN102639235B (https=)
DE (1) DE102009048087A1 (https=)
TW (1) TWI495613B (https=)
WO (1) WO2011038977A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5481649B2 (ja) * 2009-04-13 2014-04-23 日本曹達株式会社 環状シラン化合物の製造方法
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
CN105658330B (zh) * 2013-10-21 2017-07-11 三井化学株式会社 高级硅烷的制造催化剂及高级硅烷的制造方法
SG11201701326YA (en) * 2014-08-20 2017-03-30 Showa Denko Kk Method for producing oligosilane
CN109219576B (zh) * 2016-06-10 2022-06-07 昭和电工株式会社 低聚硅烷的制造方法
WO2018056250A1 (ja) 2016-09-23 2018-03-29 昭和電工株式会社 オリゴシランの製造方法
WO2018079484A1 (ja) 2016-10-27 2018-05-03 昭和電工株式会社 オリゴシランの製造方法及びオリゴシランの製造装置
US11097953B2 (en) 2018-10-11 2021-08-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes
US11230474B2 (en) * 2018-10-11 2022-01-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US11401166B2 (en) * 2018-10-11 2022-08-02 L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US10752507B2 (en) * 2018-10-11 2020-08-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1407018A (zh) * 2001-08-14 2003-04-02 捷时雅株式会社 硅烷组合物、硅膜的形成方法和太阳能电池的制造方法
WO2006107880A2 (en) * 2005-04-05 2006-10-12 Voltaix, Inc. System and method for making si2h6 and higher silanes

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2077710B (en) 1980-06-11 1983-10-12 Nat Res Dev Synthesising a polysilane
DE3886891T2 (de) * 1987-10-09 1994-06-16 Mitsui Petrochemical Ind Verfahren zur Herstellung von Polysilanverbindungen.
JPH02184513A (ja) 1989-01-11 1990-07-19 Tonen Sekiyukagaku Kk ジシランおよびトリシランの製造方法
JPH03183613A (ja) * 1989-12-08 1991-08-09 Showa Denko Kk ジシランの製造法
US4965386A (en) 1990-03-26 1990-10-23 E. I. Du Pont De Nemours And Company Hydrosilation, and dehydrocondensation of silicon hydrides, catalyzed by scandium, yttrium and rare earth metal compounds
US5252766A (en) 1990-09-14 1993-10-12 Director-General Of Agency Of Industrial Science Method for producing polysilanes
JP3621131B2 (ja) * 1993-06-15 2005-02-16 新日本石油株式会社 半導体材料の製造法
US5700400A (en) 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
JP3183613B2 (ja) 1994-09-20 2001-07-09 カルソニックカンセイ株式会社 一体型熱交換器用タンク
US6027705A (en) 1998-01-08 2000-02-22 Showa Denko K.K. Method for producing a higher silane
JPH11260729A (ja) * 1998-01-08 1999-09-24 Showa Denko Kk 高次シランの製造法
CN1294626C (zh) 1999-03-30 2007-01-10 精工爱普生株式会社 硅膜的形成方法和喷墨用油墨组合物
DE102007023760A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage, Reaktor und Verfahren zur kontinuierlichen industriellen Herstellung von 3-Methacryloxypropylalkoxysilanen
DE102007023763A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage, Reaktor und Verfahren zur kontinuierlichen industriellen Herstellung von Polyetheralkylalkoxysilanen
DE102007023759A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage und Verfahren zur kontinuierlichen industriellen Herstellung von Fluoralkylchlorsilan
DE102007023762A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage und Verfahren zur kontinuierlichen industriellen Herstellung von 3-Glycidyloxypropylalkoxysilanen
DE102007007185A1 (de) 2007-02-09 2008-08-14 Evonik Degussa Gmbh Verfahren zur Herstellung von Glycidyloxyalkyltrialkoxysilanen
DE102007014107A1 (de) 2007-03-21 2008-09-25 Evonik Degussa Gmbh Aufarbeitung borhaltiger Chlorsilanströme
EP2135844A1 (de) 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
DE102009002758A1 (de) 2009-04-30 2010-11-11 Evonik Degussa Gmbh Bandgap Tailoring von Solarzellen aus Flüssigsilan mittels Germanium-Zugabe
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010000979A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Verwendung eines druckbetriebenen keramischen Wärmetauschers als integraler Bestandteil einer Anlage zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010000978A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Strömungsrohrreaktor zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010000981A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1407018A (zh) * 2001-08-14 2003-04-02 捷时雅株式会社 硅烷组合物、硅膜的形成方法和太阳能电池的制造方法
WO2006107880A2 (en) * 2005-04-05 2006-10-12 Voltaix, Inc. System and method for making si2h6 and higher silanes

Also Published As

Publication number Publication date
KR20120081996A (ko) 2012-07-20
TW201129502A (en) 2011-09-01
EP2482976A1 (de) 2012-08-08
CN102639235B (zh) 2015-06-03
DE102009048087A1 (de) 2011-04-07
EP2482976B1 (de) 2015-05-06
US8709369B2 (en) 2014-04-29
JP2013506541A (ja) 2013-02-28
CN102639235A (zh) 2012-08-15
US20120263639A1 (en) 2012-10-18
WO2011038977A1 (de) 2011-04-07

Similar Documents

Publication Publication Date Title
TWI495613B (zh) 高級氫矽烷之製法
Mitsudome et al. Design of core-Pd/shell-Ag nanocomposite catalyst for selective semihydrogenation of alkynes
Gryaznov et al. Preparation and catalysis over palladium composite membranes
EP3033304B1 (en) Processes utilising selectively permeable membranes
Wang et al. Fabrication of novel Pd–Ag–Ru/Al2O3 ternary alloy composite membrane with remarkably enhanced H2 permeability
Obradović et al. Catalytic surface development of novel nickel plate catalyst with combined thermally annealed platinum and alumina coatings for steam methane reforming
US8710287B2 (en) Cineole
BR112014030857B1 (pt) Processo de produção de ácido adípico a partir de 1,6-hexanodiol
JPWO2018056250A1 (ja) オリゴシランの製造方法
TWI636956B (zh) 寡聚矽烷之製造方法
Sari et al. Palladium–alumina composite membrane for hydrogen separator fabricated by combined sol–gel, and electroless plating technique
JPWO2018079484A1 (ja) オリゴシランの製造方法及びオリゴシランの製造装置
KR100932416B1 (ko) 에탄 산화 촉매 및 상기 촉매의 이용 방법
JP5726608B2 (ja) 水素含有ｃｏ混合気体の選択的な酸化的脱水素化方法
Meyer et al. Gold as active phase of BN-supported catalysts for lactose oxidation
TW201233441A (en) Olefin metathesis process and catalyst containing tungsten fluorine bonds
JP2022045196A (ja) 触媒の製造方法、及び触媒、並びに３－ヒドロキシ－３－メチルブタン酸の製造方法
CN103212441A (zh) 双金属吡啶薄膜催化剂及其制备和用途
JP7591712B2 (ja) １－アルケン－３－オール類の製造方法
TWI881235B (zh) 烯烴之製造方法
JP2024033630A (ja) スチルベン化合物の製造方法
JP2026511314A (ja) 不均一レニウム触媒を使用する気相脱水素シリル化プロセス
JP2002284727A (ja) 芳香族アルコール類の製造方法
TW202247901A (zh) 觸媒及環戊烯的製造方法
JP2024135686A (ja) 炭化水素化合物の水素化方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees