CN102639235B - 较高级氢化硅烷的制备方法 - Google Patents

较高级氢化硅烷的制备方法 Download PDF

Info

Publication number
CN102639235B
CN102639235B CN201080044156.XA CN201080044156A CN102639235B CN 102639235 B CN102639235 B CN 102639235B CN 201080044156 A CN201080044156 A CN 201080044156A CN 102639235 B CN102639235 B CN 102639235B
Authority
CN
China
Prior art keywords
carrier
hydrosilanes
catalyst
hydrosilane
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080044156.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102639235A (zh
Inventor
N·布劳施
G·施托赫尼奥尔
T·夸特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Publication of CN102639235A publication Critical patent/CN102639235A/zh
Application granted granted Critical
Publication of CN102639235B publication Critical patent/CN102639235B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0201—Impregnation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/24—Chromium, molybdenum or tungsten
    • B01J23/26—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/78—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with alkali- or alkaline earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B01J23/868—Chromium copper and chromium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201080044156.XA 2009-10-02 2010-08-13 较高级氢化硅烷的制备方法 Expired - Fee Related CN102639235B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009048087.0 2009-10-02
DE102009048087A DE102009048087A1 (de) 2009-10-02 2009-10-02 Verfahren zur Herstellung höherer Hydridosilane
PCT/EP2010/061825 WO2011038977A1 (de) 2009-10-02 2010-08-13 Verfahren zur herstellung höherer hydridosilane

Publications (2)

Publication Number Publication Date
CN102639235A CN102639235A (zh) 2012-08-15
CN102639235B true CN102639235B (zh) 2015-06-03

Family

ID=43063916

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080044156.XA Expired - Fee Related CN102639235B (zh) 2009-10-02 2010-08-13 较高级氢化硅烷的制备方法

Country Status (8)

Country Link
US (1) US8709369B2 (https=)
EP (1) EP2482976B1 (https=)
JP (1) JP2013506541A (https=)
KR (1) KR20120081996A (https=)
CN (1) CN102639235B (https=)
DE (1) DE102009048087A1 (https=)
TW (1) TWI495613B (https=)
WO (1) WO2011038977A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5481649B2 (ja) * 2009-04-13 2014-04-23 日本曹達株式会社 環状シラン化合物の製造方法
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
CN105658330B (zh) * 2013-10-21 2017-07-11 三井化学株式会社 高级硅烷的制造催化剂及高级硅烷的制造方法
SG11201701326YA (en) * 2014-08-20 2017-03-30 Showa Denko Kk Method for producing oligosilane
CN109219576B (zh) * 2016-06-10 2022-06-07 昭和电工株式会社 低聚硅烷的制造方法
WO2018056250A1 (ja) 2016-09-23 2018-03-29 昭和電工株式会社 オリゴシランの製造方法
WO2018079484A1 (ja) 2016-10-27 2018-05-03 昭和電工株式会社 オリゴシランの製造方法及びオリゴシランの製造装置
US11097953B2 (en) 2018-10-11 2021-08-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes
US11230474B2 (en) * 2018-10-11 2022-01-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US11401166B2 (en) * 2018-10-11 2022-08-02 L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US10752507B2 (en) * 2018-10-11 2020-08-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700400A (en) * 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
US6027705A (en) * 1998-01-08 2000-02-22 Showa Denko K.K. Method for producing a higher silane

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2077710B (en) 1980-06-11 1983-10-12 Nat Res Dev Synthesising a polysilane
DE3886891T2 (de) * 1987-10-09 1994-06-16 Mitsui Petrochemical Ind Verfahren zur Herstellung von Polysilanverbindungen.
JPH02184513A (ja) 1989-01-11 1990-07-19 Tonen Sekiyukagaku Kk ジシランおよびトリシランの製造方法
JPH03183613A (ja) * 1989-12-08 1991-08-09 Showa Denko Kk ジシランの製造法
US4965386A (en) 1990-03-26 1990-10-23 E. I. Du Pont De Nemours And Company Hydrosilation, and dehydrocondensation of silicon hydrides, catalyzed by scandium, yttrium and rare earth metal compounds
US5252766A (en) 1990-09-14 1993-10-12 Director-General Of Agency Of Industrial Science Method for producing polysilanes
JP3621131B2 (ja) * 1993-06-15 2005-02-16 新日本石油株式会社 半導体材料の製造法
JP3183613B2 (ja) 1994-09-20 2001-07-09 カルソニックカンセイ株式会社 一体型熱交換器用タンク
JPH11260729A (ja) * 1998-01-08 1999-09-24 Showa Denko Kk 高次シランの製造法
CN1294626C (zh) 1999-03-30 2007-01-10 精工爱普生株式会社 硅膜的形成方法和喷墨用油墨组合物
TW555690B (en) 2001-08-14 2003-10-01 Jsr Corp Silane composition, silicon film forming method and solar cell production method
US8163261B2 (en) * 2005-04-05 2012-04-24 Voltaix, Llc System and method for making Si2H6 and higher silanes
DE102007023760A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage, Reaktor und Verfahren zur kontinuierlichen industriellen Herstellung von 3-Methacryloxypropylalkoxysilanen
DE102007023763A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage, Reaktor und Verfahren zur kontinuierlichen industriellen Herstellung von Polyetheralkylalkoxysilanen
DE102007023759A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage und Verfahren zur kontinuierlichen industriellen Herstellung von Fluoralkylchlorsilan
DE102007023762A1 (de) 2006-08-10 2008-02-14 Evonik Degussa Gmbh Anlage und Verfahren zur kontinuierlichen industriellen Herstellung von 3-Glycidyloxypropylalkoxysilanen
DE102007007185A1 (de) 2007-02-09 2008-08-14 Evonik Degussa Gmbh Verfahren zur Herstellung von Glycidyloxyalkyltrialkoxysilanen
DE102007014107A1 (de) 2007-03-21 2008-09-25 Evonik Degussa Gmbh Aufarbeitung borhaltiger Chlorsilanströme
EP2135844A1 (de) 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
DE102009002758A1 (de) 2009-04-30 2010-11-11 Evonik Degussa Gmbh Bandgap Tailoring von Solarzellen aus Flüssigsilan mittels Germanium-Zugabe
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010000979A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Verwendung eines druckbetriebenen keramischen Wärmetauschers als integraler Bestandteil einer Anlage zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010000978A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Strömungsrohrreaktor zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010000981A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700400A (en) * 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
US6027705A (en) * 1998-01-08 2000-02-22 Showa Denko K.K. Method for producing a higher silane

Also Published As

Publication number Publication date
KR20120081996A (ko) 2012-07-20
TW201129502A (en) 2011-09-01
TWI495613B (zh) 2015-08-11
EP2482976A1 (de) 2012-08-08
DE102009048087A1 (de) 2011-04-07
EP2482976B1 (de) 2015-05-06
US8709369B2 (en) 2014-04-29
JP2013506541A (ja) 2013-02-28
CN102639235A (zh) 2012-08-15
US20120263639A1 (en) 2012-10-18
WO2011038977A1 (de) 2011-04-07

Similar Documents

Publication Publication Date Title
CN102639235B (zh) 较高级氢化硅烷的制备方法
EP1836326B1 (en) Composite materials and method of its manufacture
CN105536851B (zh) 一种乙炔选择性加氢催化剂的制备方法
CN107694594B (zh) 固载金属的氮掺杂碳材料及其制备方法和用途
JP2007535413A5 (https=)
Hauser et al. Polymer-Derived SiBCN Ceramic and their Potential Application for High Temperature Membranes Dedicated to Prof. Dr.-Ing. Dr. hc Hartmut Fuess on the occasion of his 65th birthday
Perdigon-Melon et al. Micrometric BN powders used as catalyst support: influence of the precursor on the properties of the BN ceramic
Tsoncheva et al. Nickel-decorated mesoporous iron–cerium mixed oxides: microstructure and catalytic activity in methanol decomposition
Salameh et al. Chemistry of a series of aluminum-modified polysilazanes: synthesis, pyrolysis behaviour and microstructural evolution
WO2016039479A1 (ja) 高分子担持遷移触媒
Jackson et al. Tuning acid–base properties using Mg–Al oxide atomic layer deposition
CN108187673B (zh) 一种用于催化苯酚氧化羰基化反应的催化剂及其制备和应用方法
Xue et al. Amorphous Ni–B alloy membrane: preparation and application in ethanol dehydrogenation
Kataoka et al. Fabrication of mesoporous silica thin films inside microreactors
Bechelany et al. Ceramic nanocomposites prepared via the in situ formation of a novel TiZrN2 nanophase in a polymer-derived Si3N4 matrix
CN113024819A (zh) 一种SiBCN陶瓷先驱体及其合成方法
CN106660810B (zh) 高分子量聚硅烷及其制造方法
CN116615281A (zh) 用于制备催化活性支架的方法
WO2012075074A1 (en) Layer-by-layer deposed multimetallic catalysts on a support
Tang et al. Facile synthesis of M (= NtBu) 2 (CH2SiMe3) 2 (M= Mo or W) as potential precursors for thin film deposition
CN102234375A (zh) 聚苯乙炔基硅氧硼烷及其制备方法
Timonen et al. Synthesis of supported titanocene amide complex and its use as a catalyst in ethylene polymerization
Pattinson et al. Facile processing of zeolite based catalyst support for carbon nanotube synthesis
CN117185299B (zh) 有机金属催化剂在制备乙硅烷中的用途及乙硅烷的制法
Serp et al. Surface reactivity of transition metal CVD precursors: towards the control of the nucleation step

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150603

Termination date: 20150813

EXPY Termination of patent right or utility model