TWI495613B - 高級氫矽烷之製法 - Google Patents

高級氫矽烷之製法 Download PDF

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Publication number
TWI495613B
TWI495613B TW099133065A TW99133065A TWI495613B TW I495613 B TWI495613 B TW I495613B TW 099133065 A TW099133065 A TW 099133065A TW 99133065 A TW99133065 A TW 99133065A TW I495613 B TWI495613 B TW I495613B
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TW
Taiwan
Prior art keywords
catalyst
support
reaction
hydrooxane
oxide
Prior art date
Application number
TW099133065A
Other languages
English (en)
Chinese (zh)
Other versions
TW201129502A (en
Inventor
Nicole Brausch
Guido Stochniol
Thomas Quandt
Original Assignee
Evonik Degussa Gmbh
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Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of TW201129502A publication Critical patent/TW201129502A/zh
Application granted granted Critical
Publication of TWI495613B publication Critical patent/TWI495613B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0201—Impregnation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/24—Chromium, molybdenum or tungsten
    • B01J23/26—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/78—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with alkali- or alkaline earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B01J23/868—Chromium copper and chromium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW099133065A 2009-10-02 2010-09-29 高級氫矽烷之製法 TWI495613B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009048087A DE102009048087A1 (de) 2009-10-02 2009-10-02 Verfahren zur Herstellung höherer Hydridosilane

Publications (2)

Publication Number Publication Date
TW201129502A TW201129502A (en) 2011-09-01
TWI495613B true TWI495613B (zh) 2015-08-11

Family

ID=43063916

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099133065A TWI495613B (zh) 2009-10-02 2010-09-29 高級氫矽烷之製法

Country Status (8)

Country Link
US (1) US8709369B2 (enExample)
EP (1) EP2482976B1 (enExample)
JP (1) JP2013506541A (enExample)
KR (1) KR20120081996A (enExample)
CN (1) CN102639235B (enExample)
DE (1) DE102009048087A1 (enExample)
TW (1) TWI495613B (enExample)
WO (1) WO2011038977A1 (enExample)

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EP2420506B1 (en) 2009-04-13 2016-11-16 Nippon Soda Co., Ltd. Process for production of cyclic silane compound and/or cyclic carbosilane compound
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
KR101796881B1 (ko) 2013-10-21 2017-11-10 미쓰이 가가쿠 가부시키가이샤 고급 실란의 제조 촉매 및 고급 실란의 제조 방법
SG11201701326YA (en) * 2014-08-20 2017-03-30 Showa Denko Kk Method for producing oligosilane
US20190256361A1 (en) * 2016-06-10 2019-08-22 Showa Denko K.K. Method for producing oligosilane
CN109803921B (zh) 2016-09-23 2022-03-11 昭和电工株式会社 低聚硅烷的制造方法
WO2018079484A1 (ja) 2016-10-27 2018-05-03 昭和電工株式会社 オリゴシランの製造方法及びオリゴシランの製造装置
US11097953B2 (en) 2018-10-11 2021-08-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes
US11230474B2 (en) * 2018-10-11 2022-01-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US11401166B2 (en) 2018-10-11 2022-08-02 L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US10752507B2 (en) * 2018-10-11 2020-08-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN1407018A (zh) * 2001-08-14 2003-04-02 捷时雅株式会社 硅烷组合物、硅膜的形成方法和太阳能电池的制造方法
WO2006107880A2 (en) * 2005-04-05 2006-10-12 Voltaix, Inc. System and method for making si2h6 and higher silanes

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JPH02184513A (ja) 1989-01-11 1990-07-19 Tonen Sekiyukagaku Kk ジシランおよびトリシランの製造方法
JPH03183613A (ja) * 1989-12-08 1991-08-09 Showa Denko Kk ジシランの製造法
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US5700400A (en) 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
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DE102010000979A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Verwendung eines druckbetriebenen keramischen Wärmetauschers als integraler Bestandteil einer Anlage zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010000978A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Strömungsrohrreaktor zur Umsetzung von Siliciumtetrachlorid zu Trichlorsilan
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1407018A (zh) * 2001-08-14 2003-04-02 捷时雅株式会社 硅烷组合物、硅膜的形成方法和太阳能电池的制造方法
WO2006107880A2 (en) * 2005-04-05 2006-10-12 Voltaix, Inc. System and method for making si2h6 and higher silanes

Also Published As

Publication number Publication date
DE102009048087A1 (de) 2011-04-07
KR20120081996A (ko) 2012-07-20
EP2482976B1 (de) 2015-05-06
TW201129502A (en) 2011-09-01
US20120263639A1 (en) 2012-10-18
WO2011038977A1 (de) 2011-04-07
US8709369B2 (en) 2014-04-29
CN102639235B (zh) 2015-06-03
CN102639235A (zh) 2012-08-15
EP2482976A1 (de) 2012-08-08
JP2013506541A (ja) 2013-02-28

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