TWI494709B - 用於塗層之剝離劑 - Google Patents
用於塗層之剝離劑 Download PDFInfo
- Publication number
- TWI494709B TWI494709B TW096146530A TW96146530A TWI494709B TW I494709 B TWI494709 B TW I494709B TW 096146530 A TW096146530 A TW 096146530A TW 96146530 A TW96146530 A TW 96146530A TW I494709 B TWI494709 B TW I494709B
- Authority
- TW
- Taiwan
- Prior art keywords
- hydroxide
- composition
- quaternary ammonium
- group
- alkyl
- Prior art date
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- 239000011247 coating layer Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 82
- -1 arylalkylhydrazine Chemical group 0.000 claims description 53
- 239000006117 anti-reflective coating Substances 0.000 claims description 38
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 33
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 30
- 125000000217 alkyl group Chemical group 0.000 claims description 25
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
- 150000004673 fluoride salts Chemical class 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- CSJLBAMHHLJAAS-UHFFFAOYSA-N diethylaminosulfur trifluoride Chemical compound CCN(CC)S(F)(F)F CSJLBAMHHLJAAS-UHFFFAOYSA-N 0.000 claims description 8
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims description 8
- 125000001931 aliphatic group Chemical group 0.000 claims description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical class CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 claims description 6
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N gamma-butyrolactone Natural products O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 5
- 150000004677 hydrates Chemical class 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 5
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 150000005215 alkyl ethers Chemical class 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- RPQFOXCKLIALTB-UHFFFAOYSA-M 3-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)CC[N+](C)(C)C RPQFOXCKLIALTB-UHFFFAOYSA-M 0.000 claims description 3
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 claims description 3
- YZHQBWDNOANICQ-UHFFFAOYSA-M 4-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCCO YZHQBWDNOANICQ-UHFFFAOYSA-M 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 3
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 3
- HQDFXHKYURDVIO-UHFFFAOYSA-M decyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCC[N+](C)(C)C HQDFXHKYURDVIO-UHFFFAOYSA-M 0.000 claims description 3
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical group [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 claims description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 150000004040 pyrrolidinones Chemical class 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical class O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- CPOUUWYFNYIYLQ-UHFFFAOYSA-M tetra(propan-2-yl)azanium;hydroxide Chemical compound [OH-].CC(C)[N+](C(C)C)(C(C)C)C(C)C CPOUUWYFNYIYLQ-UHFFFAOYSA-M 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- RROIKUJKYDVRRG-UHFFFAOYSA-M tetrakis(2-methylpropyl)azanium;hydroxide Chemical compound [OH-].CC(C)C[N+](CC(C)C)(CC(C)C)CC(C)C RROIKUJKYDVRRG-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 claims description 3
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical group [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 claims description 3
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 claims description 3
- HMNZROFMBSUMAB-UHFFFAOYSA-N 1-ethoxybutan-1-ol Chemical compound CCCC(O)OCC HMNZROFMBSUMAB-UHFFFAOYSA-N 0.000 claims description 2
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 claims description 2
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical class CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 2
- 150000005676 cyclic carbonates Chemical class 0.000 claims description 2
- 150000004292 cyclic ethers Chemical class 0.000 claims description 2
- LPLMZAJYUPAYQZ-UHFFFAOYSA-N diazanium;difluoride Chemical group [NH4+].[NH4+].[F-].[F-] LPLMZAJYUPAYQZ-UHFFFAOYSA-N 0.000 claims description 2
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 150000002596 lactones Chemical class 0.000 claims description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 2
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical group [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 claims description 2
- DEQOKDUASYKHRI-UHFFFAOYSA-N 1-fluoro-2-(1-fluoropyridin-2-ylidene)pyridine Chemical group FN1C(C=CC=C1)=C1N(C=CC=C1)F DEQOKDUASYKHRI-UHFFFAOYSA-N 0.000 claims 4
- FTTATHOUSOIFOQ-UHFFFAOYSA-N 1,2,3,4,6,7,8,8a-octahydropyrrolo[1,2-a]pyrazine Chemical compound C1NCCN2CCCC21 FTTATHOUSOIFOQ-UHFFFAOYSA-N 0.000 claims 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 3
- FVRSWMRVYMPTBU-UHFFFAOYSA-M 1-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCC(O)[N+](C)(C)C FVRSWMRVYMPTBU-UHFFFAOYSA-M 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 2
- 239000000908 ammonium hydroxide Substances 0.000 claims 2
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 claims 2
- HQABUPZFAYXKJW-UHFFFAOYSA-O butylazanium Chemical compound CCCC[NH3+] HQABUPZFAYXKJW-UHFFFAOYSA-O 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 2
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical group [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 claims 2
- ZAWQLLMEWCZBCS-UHFFFAOYSA-N n,n-dipropylpropan-1-amine;ethane-1,2-diol Chemical compound OCCO.CCCN(CCC)CCC ZAWQLLMEWCZBCS-UHFFFAOYSA-N 0.000 claims 2
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical group [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 claims 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical class CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical class COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 claims 1
- 229940113088 dimethylacetamide Drugs 0.000 claims 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 1
- PKFWAYWIOOSXIO-UHFFFAOYSA-N n,n-dibutylbutan-1-amine;ethanol Chemical compound CCO.CCCCN(CCCC)CCCC PKFWAYWIOOSXIO-UHFFFAOYSA-N 0.000 claims 1
- NVTNQIBQPLGHGE-UHFFFAOYSA-N n,n-dibutylbutan-1-amine;hydrate Chemical compound [OH-].CCCC[NH+](CCCC)CCCC NVTNQIBQPLGHGE-UHFFFAOYSA-N 0.000 claims 1
- 150000003865 secondary ammonium salts Chemical class 0.000 claims 1
- 150000003866 tertiary ammonium salts Chemical class 0.000 claims 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical class OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 239000012776 electronic material Substances 0.000 description 14
- 239000002585 base Substances 0.000 description 13
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 238000009472 formulation Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000011179 visual inspection Methods 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- VEPTXBCIDSFGBF-UHFFFAOYSA-M tetrabutylazanium;fluoride;trihydrate Chemical compound O.O.O.[F-].CCCC[N+](CCCC)(CCCC)CCCC VEPTXBCIDSFGBF-UHFFFAOYSA-M 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000005210 alkyl ammonium group Chemical group 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000001072 heteroaryl group Chemical group 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 2
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 2
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- KLTIXASWUBITSZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;fluoride Chemical compound [F-].CCCCCCCCCCCC[N+](C)(C)C KLTIXASWUBITSZ-UHFFFAOYSA-M 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 1
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- AKWHOGIYEOZALP-UHFFFAOYSA-N methyl 2-methoxy-2-methylpropanoate Chemical compound COC(=O)C(C)(C)OC AKWHOGIYEOZALP-UHFFFAOYSA-N 0.000 description 1
- AVVSSORVCLNBOS-UHFFFAOYSA-N methyl 2-propoxyacetate Chemical compound CCCOCC(=O)OC AVVSSORVCLNBOS-UHFFFAOYSA-N 0.000 description 1
- VBCSBEIIIFLVQV-UHFFFAOYSA-N methyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OC VBCSBEIIIFLVQV-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- DMHHINXESLPPMV-UHFFFAOYSA-N methyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OC DMHHINXESLPPMV-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- NVVLMKLCGJCBMM-UHFFFAOYSA-M methyl(trioctyl)azanium;fluoride Chemical compound [F-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC NVVLMKLCGJCBMM-UHFFFAOYSA-M 0.000 description 1
- VFOJFWOVDZGATC-UHFFFAOYSA-N methyl(tripropyl)azanium Chemical class CCC[N+](C)(CCC)CCC VFOJFWOVDZGATC-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- RLUCXJBHKHIDSP-UHFFFAOYSA-N propane-1,2-diol;propanoic acid Chemical compound CCC(O)=O.CC(O)CO RLUCXJBHKHIDSP-UHFFFAOYSA-N 0.000 description 1
- LVDAGIFABMFXSJ-UHFFFAOYSA-N propyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCC LVDAGIFABMFXSJ-UHFFFAOYSA-N 0.000 description 1
- GYOCIFXDRJJHPF-UHFFFAOYSA-N propyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCC GYOCIFXDRJJHPF-UHFFFAOYSA-N 0.000 description 1
- ADOFEJQZDCWAIL-UHFFFAOYSA-N propyl 2-ethoxyacetate Chemical compound CCCOC(=O)COCC ADOFEJQZDCWAIL-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- FIABMSNMLZUWQH-UHFFFAOYSA-N propyl 2-methoxyacetate Chemical compound CCCOC(=O)COC FIABMSNMLZUWQH-UHFFFAOYSA-N 0.000 description 1
- CYIRLFJPTCUCJB-UHFFFAOYSA-N propyl 2-methoxypropanoate Chemical compound CCCOC(=O)C(C)OC CYIRLFJPTCUCJB-UHFFFAOYSA-N 0.000 description 1
- BMVTVMIDGMNRRR-UHFFFAOYSA-N propyl 2-propoxyacetate Chemical compound CCCOCC(=O)OCCC BMVTVMIDGMNRRR-UHFFFAOYSA-N 0.000 description 1
- HJIYVZIALQOKQI-UHFFFAOYSA-N propyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OCCC HJIYVZIALQOKQI-UHFFFAOYSA-N 0.000 description 1
- IYVPXMGWHZBPIR-UHFFFAOYSA-N propyl 3-ethoxypropanoate Chemical compound CCCOC(=O)CCOCC IYVPXMGWHZBPIR-UHFFFAOYSA-N 0.000 description 1
- KNCDNPMGXGIVOM-UHFFFAOYSA-N propyl 3-hydroxypropanoate Chemical compound CCCOC(=O)CCO KNCDNPMGXGIVOM-UHFFFAOYSA-N 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- YTUFRRBSSNRYID-UHFFFAOYSA-N propyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OCCC YTUFRRBSSNRYID-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012363 selectfluor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ZJKOMXZUJBYOOK-UHFFFAOYSA-M tetraphenylazanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[N+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 ZJKOMXZUJBYOOK-UHFFFAOYSA-M 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 125000005208 trialkylammonium group Chemical group 0.000 description 1
- PMOSMYOKDJRRNC-UHFFFAOYSA-N tributyl(4,4-difluorobutyl)azanium Chemical compound FC(CCC[N+](CCCC)(CCCC)CCCC)F PMOSMYOKDJRRNC-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DHDVFNLGTLWROU-UHFFFAOYSA-M triethyl(pentyl)azanium;fluoride Chemical compound [F-].CCCCC[N+](CC)(CC)CC DHDVFNLGTLWROU-UHFFFAOYSA-M 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003953 γ-lactams Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Glass (AREA)
- Paints Or Removers (AREA)
- Detergent Compositions (AREA)
Description
在微電子工業中,趨勢係減小結構部件之尺寸。使用有效光阻之微影技術提供使能技術。然而,隨著部件繼續小型化,亦需要減小光阻厚度。對於一些微影成像方法而言,用於先進微影技術中之薄光阻不再能夠為蝕刻之持續期間提供足夠遮蔽以便達成以高保真度將圖案轉印至基板。
此問題之一種解決方案為利用下伏於光阻之層,該層不僅充當抗反射塗料,而且提供足夠蝕刻選擇性。此增強之蝕刻選擇性將允許此塗料用作影像轉印中間物。在當前技術水平發展中,(例如)在當前由半導體工業開發之三層方案中使用含矽底部抗反射塗料來用於此目的。
儘管可藉由使用電漿之乾式蝕刻移除固化之含矽底部抗反射塗料/硬質罩幕材料,但仍非常需要可藉由剝離或濕式蝕刻移除該等材料而不損壞基板或IC設備。當前,剝離劑技術用來移除有機材料。舉例而言,美國專利4,744,834、4,395,479、4,401,748、4,428,871揭示可用於自基板移除光阻之基於2-吡咯啶酮之剝離組合物。美國專利4,776,892及4,239,661揭示含有有機四級銨鹼之含水剝離組合物。美國專利3,673,099及歐洲專利0531292係針對含有經取代之2-吡咯啶酮與有機四級銨鹼之混合物的剝離組合物。
含固化矽氧材料表現不同於有機材料,因為其更類似於
無機矽酸鹽結構。已展示矽底部抗反射塗料材料可藉由含有HF之組合物來移除(2005年SPIE會議錄,第5753卷,第449-458頁)。WO 2004/113417 A1揭示具有高HF蝕刻速率之含矽底部抗反射塗料材料。然而,HF毒性極強且含HF剝離劑之處理亦為問題。
本發明者已發現含矽底部抗反射塗料材料不能藉由含有HF之剝離劑來移除。因此,需要開發一種用於移除含矽氧底部抗反射塗料/硬質罩幕材料的剝離劑。
本發明係關於一種剝離組合物,其包含或基本上由以下各物組成:氟化物源;有機四級銨鹼;及選自有機溶劑、水及其混合物之溶劑。舉例而言,該氟化物源可為有機氟化鹽。舉例而言,該有機四級銨鹼可為脂族銨鹼。氟化物源及有機四級銨鹼可以約10:1至約0.1:1,進一步約7:1至約0.5:1且進一步約5:1至約0.75:1之氟化物源:有機四級銨鹼之比率(重量/重量)存在。亦提出一種自基板剝離塗層之方法。
本發明係關於一種剝離組合物,其包含或基本上由以下各物組成:氟化物源;有機四級銨鹼;及選自有機溶劑、水及其混合物之溶劑。舉例而言,該氟化物源可為有機氟化鹽。舉例而言,該有機四級銨鹼可為脂族銨鹼。氟化物源及有機四級銨鹼可以約10:1至約0.1:1,進一步約7:1至約0.5:1且進一步約5:1至約0.75:1之氟化物源:有機四級銨
鹼之比率(重量/重量)存在。亦提出一種自基板剝離塗層之方法。
該組合物之一種組份為氟化物源。氟化物源之實例包括基於有機之氟化物源,諸如四級銨鹽(例如,氟化四C1-6
烷基銨,諸如氟化四甲基氟化銨、氟化四乙基銨、氟化四丙基銨及氟化四丁基銨;氟化三C1-6
烷基C6-20
烷基銨,諸如氟化三甲基月桂基銨、氟化三甲基月桂基銨及氟化十六烷基三甲基銨;及氟化二C1-6
烷基二C8-20
烷基銨,諸如氟化二甲基二月桂基銨及氟化二乙基二月桂基銨),脂族/芳基四級銨鹽(例如,氟化苄基三C1-16
烷基銨)及其水合物。此等鹽之其他實例包括氟化二甲基二乙基銨、氟化苄基三甲基銨、氟化苄基三丁基銨、氟化十六烷基三甲基銨、氟化異丙基三甲基銨、氟化第二丁基三甲基銨、氟化戊基三乙基銨、氟化甲基三辛基銨以及其混合物及水合物。
適當氟化物源之其他實例為二氟化二四級銨鹽,諸如具有式[(R')3
N+
(Z)m
N+
(R')3
](F-
)2
之化合物,其中各R'個別地為具有1至20個碳原子之烷基、具有1至20個碳原子之雜烷基、芳基、雜芳基、具有3至6個碳原子之環烷基、具有3至6個碳原子之環雜烷基或其組合。N為四配位元素氮或脂環族、雜脂環族或雜芳族結構中之雜原子氮;Z為選自由以下各物組成之群的橋鍵成員:具有1至20個碳原子之烷基、具有2至20個碳原子之烯基、芳基、具有1至20個碳原子之雜烷基、具有2至20個碳原子之雜烯基及雜芳基;且m為1至10。此等化合物之實例包括[(CH3
)3
N+
(CH2
)6
N+
(CH3
)3
](F-
)2
、
[(C3
H7
)3
N+
(CH2
)6
N+
(C3
H7
)3
](F-
)2
、[(CH3
)3
N+
(C2
H4
)6
N+
(CH3
)3
](F-
)2
、[(C6
H5
)3
N+
(CH2
)6
N+
(CH3
)3
](F-
)2
、[(C6
H5
)3
N+
(C2
H4
)2
N+
(CH3
)3
](F-
)2
及其類似化合物等。氟化二四級銨鹽之另一實例為N,N'-二氟-2,2'-聯吡錠(雙四氟硼酸鹽)(稱為MEC-31)。又一實例為肆(二甲胺基)乙烯(TDAE)/CF3錯合物。
氟化物源之其他實例包括二氟三芳基(或三烷基或芳基與烷基之混合物)二矽酸四烷基銨,其具有式[芳基]q
[烷基]r
Si[F]s
,其中q為1或2,r為1或2,且s為2或3。
一個實例為具有下式之化合物:
其中R1
為零至三個取代基,其之每一者獨立地為烷基、烯基、芳基烷醯基、烷氧基或硝基;及R2
為烷基,一種實例為二氟三苯基矽酸四丁基銨。
其他實例為具有下式之化合物:
其中R1
及R2
係如上所定義。
在美國專利第6,414,173號及第6,203,721號中更完整地描述此等類型之鹽,該兩專利以引用的方式併入本文中。
額外之氟化二四級銨鹽亦為DABCO(1,4-二氮雜雙環[2.2.2]辛烷)之氟化二四級銨鹽,其由下式展示:
其中n為1至10。在美國專利第4,559,213號中更完整地描述此等鹽,該專利以引用的方式併入本文中。
其他氟化物源包括吡錠鹽,諸如氟化苄基-3-羥基吡錠;咪唑啶鹽,諸如氟化1,3-二癸基-2-甲基咪唑鎓;四唑鎓鹽,諸如氟化2,3,5-三苯基-四唑鎓及其類似物等。又一氟化物源包括可在加熱條件下藉由消除反應釋放氟化物的氟化有機化合物。
其他氟化物源包括以下材料:諸如1-氟-4-氯甲基-1,4-二氮雜雙環[2.2.2]辛烷雙(四氟硼酸鹽)(商品名稱Selectfluor)、1-氟-4-羥基-1,4-二氮雜雙環[2.2.2]辛烷雙(四氟硼酸鹽)(商品名稱Accufluor)、N,N'-二氟-2,2'-二吡錠雙(四氟硼酸鹽)、'N-F'試劑(例如R2
N-F)、'[N-F]+
'試劑(例如R3
N+
-F)、2,2-二氟-1,3-二甲基咪唑啶、二乙基胺基三氟化硫、Ra
Rb
N-CF2
-Rc
,其中Ra
為氫或烷基且Rb
及Rc
各自係選自烷基或芳基(商品名稱Fluorinox)、全氟丁烷磺醯氟及其類似物等。其他氟化物源包括鹼金屬鹽(例如LiF、NaF、KF等)及鹼土金屬鹽(例如CaF2
、MgF2
等)。
其他氟化物源包括氟化銨(NH4
F)、烷基氟化氫(NRH3
F)、氟化氫二烷基銨(NR2
H2
F)、氟化氫三烷基銨(NR3
HF)、三氟化氫三烷基銨(NR3
(3HF)),其中R為烷基或芳基。
在本發明中亦涵蓋前述之水合物及混合物。
本發明之組合物之另一組份為有機四級銨鹼。實例包括氫氧化脂族、芳基及混合之脂族/芳基四級銨及其混合物,其中脂族基及芳基係未經取代或經取代。其他實例包括(但不限於)氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四異丙基銨、氫氧化四丁基銨、氫氧化三甲基乙基銨、氫氧化(2-羥基乙基)三甲基銨、氫氧化(2-羥基乙基)三乙基銨、氫氧化(2-羥基乙基)三丙基銨、氫氧化(1-羥基丙基)三甲基銨、氫氧化乙基三甲基銨、氫氧化二乙基二甲基銨、氫氧化二甲基二乙基銨、氫氧化三甲基(2-羥基乙基)銨、氫氧化三甲基-3-羥基丙基銨、氫氧化三甲基-3-羥基丁基銨、氫氧化三甲基-4-羥基丁基銨、氫氧化三乙基-2-羥基乙基銨、氫氧化三丙基-2-羥基乙基銨、氫氧化三丁基-2-羥基乙基銨、氫氧化二甲基乙基-2-羥基乙基銨、氫氧化二甲基二(2-羥基乙基)銨、氫氧化單甲基三(2-羥基乙基)銨、氫氧化四異丁基銨、氫氧化四-第三丁基銨、氫氧化單甲基-三乙基銨、氫氧化單甲基三丙基銨、氫氧化單甲基三丁基銨、氫氧化單乙基三甲基銨、氫氧化單乙基三丁基銨、氫氧化二甲基二丁基銨、氫氧化三乙基(2-羥基乙基)銨、氫氧化苄基三甲基銨、氫氧化癸基三甲基銨及氫氧化四苯基銨。
本發明之組合物中之另一組份為一種溶劑。適合溶劑可包括(例如)酮,諸如丙酮、甲基乙基酮、甲基異丁基酮、環己酮、異佛爾酮、甲基異戊基酮、2-羥基4-庚酮及4-甲
基2-戊酮;C1
至C10
脂族醇,諸如甲醇、乙醇、正丙醇、異丙醇、正丁醇、第二丁醇及其類似醇;含芳族基之醇,諸如苄醇;酚;環狀碳酸酯,諸如碳酸乙二酯及碳酸丙二酯;脂族或芳族烴(例如己烷、甲苯、二甲苯等及其類似物);環醚,諸如二噁烷及四氫呋喃;乙二醇;丙二醇;己二醇;醚醇,例如1-丁氧基乙氧基-2-丙醇、3-甲基-3-甲氧基丁醇、乙二醇正丁醚、乙二醇苯醚、乙二醇單甲醚、乙二醇單乙醚、乙二醇丙醚、二乙二醇己醚、二乙二醇單乙醚、二乙二醇單甲醚、二乙二醇單丁醚、二乙二醇單丙醚、丙二醇乙醚、丙二醇異丁醚、丙二醇單甲醚、丙二醇單丁醚、丙二醇單乙醚、丙二醇正丙醚、丙二醇苯醚、丙二醇-第三丁醚、二丙二醇乙醚、二丙二醇單丁醚、二丙二醇單甲醚、二丙二醇單丙醚、三乙二醇乙醚、三乙二醇甲醚、三乙二醇正丁醚、三丙二醇甲醚、三丙二醇正丁醚;乙二醇烷基醚乙酸酯,諸如甲基賽路蘇乙酸酯及乙基賽路蘇乙酸酯;丙二醇烷基醚乙酸酯,諸如丙二醇甲醚乙酸酯、丙二醇乙醚乙酸酯、丙二醇丙醚乙酸酯及丙二醇丁醚乙酸酯;丙二醇丙酸烷基醚丙酸酯,諸如丙二醇甲醚丙酸酯、丙二醇乙醚丙酸酯、丙二醇丙醚丙酸酯及丙二醇丁醚丙酸酯;2-甲氧基乙醚(二乙二醇二甲醚);具有醚部分與羥基部分之溶劑,諸如甲氧基丁醇、乙氧基丁醇、甲氧基丙醇及乙氧基丙醇;酯,諸如乙酸甲酯、乙酸乙酯、乙酸丙酯及乙酸丁酯;丙酮酸甲酯、丙酮酸乙酯;2-羥基丙酸乙酯、2-羥基2-甲基丙酸甲酯、2-羥基2-甲基丙酸乙
酯、羥基乙酸甲酯、羥基乙酸乙酯、羥基乙酸丁酯、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、3-羥基丙酸甲酯、3-羥基丙酸乙酯、3-羥基丙酸丙酯、3-羥基丙酸丁酯、甲基2-羥基3-甲基丁酸、甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、乙氧基乙酸丙酯、乙氧基乙酸丁酯、丙氧基乙酸甲酯、丙氧基乙酸乙酯、丙氧基乙酸丙酯、丙氧基乙酸丁酯、丁氧基乙酸甲酯、丁氧基乙酸乙酯、丁氧基乙酸丙酯、丁氧基乙酸丁酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-甲氧基丙酸丁酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯、2-乙氧基丙酸丙酯、2-乙氧基丙酸丁酯、2-丁氧基丙酸甲酯、2-丁氧基丙酸乙酯、2-丁氧基丙酸丙酯、2-丁氧基丙酸丁酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-甲氧基丙酸丙酯、3-甲氧基丙酸丁酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸丙酯、3-乙氧基丙酸丁酯、3-丙氧基丙酸甲酯、3-丙氧基丙酸乙酯、3-丙氧基丙酸丙酯、3-丙氧基丙酸丁酯、3-丁氧基丙酸甲酯、3-丁氧基丙酸乙酯、3-丁氧基丙酸丙酯及3-丁氧基丙酸丁酯;氧基異丁酸酯,例如2-羥基異丁酸甲酯、α-甲氧基異丁酸甲酯、甲氧基異丁酸乙酯、α-乙氧基異丁酸甲酯、α-乙氧基異丁酸乙酯、β-甲氧基異丁酸甲酯、β-甲氧基異丁酸乙酯、β-乙氧基異丁酸甲酯、β-乙氧基異丁酸乙酯、β-異丙氧基異丁酸甲酯、β-異丙氧基異丁酸乙酯、β-異丙氧基異丁酸異
丙酯、β-異丙氧基異丁酸丁酯、β-丁氧基異丁酸甲酯、β-丁氧基異丁酸乙酯、β-丁氧基異丁酸丁酯、α-羥基異丁酸甲酯、α-羥基異丁酸乙酯、α-羥基異丁酸異丙酯及α-羥基異丁酸丁酯;未經取代或經取代之吡咯啶酮,諸如2-吡咯啶酮、1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、1-丙基-2-吡咯啶酮、1-羥基甲基-2-吡咯啶酮、1-羥基乙基-2-吡咯啶酮、1-羥基丙基-2-吡咯啶酮;未經取代或經取代之四氫噻吩-1,1-二氧化物,諸如四氫噻吩-1,1-二氧化物,甲基四氫噻吩-1,1-二氧化物及乙基四氫噻吩-1,1-二氧化物及其他溶劑,諸如二甲亞碸、二元酯及γ-丁內酯;酮醚衍生物,諸如二丙酮醇甲醚;酮醇衍生物,諸如丙酮醇或二丙酮醇;內酯,諸如丁內酯;醯胺衍生物,諸如二甲基乙醯胺或二甲基甲醯胺;苯甲醚及其混合物。如熟習此項技術者將易於確定而無需不當實驗而瞭解,溶劑或溶劑之混合物應溶解氟化物源。
除上述組份以外,可將諸如界面活性劑及其類似物之可選材料添加至本發明之組合物中。界面活性劑之實例包括尤其在可加熱剝離劑溶液之情況下較佳低發泡、環境安全、較佳生物可降解、化學穩定且可溶於含水溶液的界面活性劑。儘管可使用陰離子及陽離子界面活性劑,但非離子性界面活性劑為尤其有用者。例如,非離子性界面活性劑,其為直鏈或分支鏈之烷氧基化物、氧化乙烯/氧化丙烯聚合物、炔醇、聚乙二醇單苯醚等。界面活性劑之特定實例包括(但不限於)直鏈醇烷氧基化物、十三基烷氧基化
物、聚(氧化乙烯共聚氧化丙烯)及聚氧化乙烯。本發明之剝離劑可含有此等界面活性劑之單個或混合物。
其他可選添加劑包括消泡劑、抗蝕劑、濕潤劑及其類似物。
以下實例證實本發明之組合物的有效性及剝離塗層之方法。實例1及實例2證實本發明之剝離組合物、剝離程序及矽晶圓上之矽底部抗反射塗料的剝離結果。實例4及實例5證實本發明之剝離組合物、剝離程序及二氧化矽或氮化矽基板上之矽底部抗反射塗料的剝離結果。實例3證實本發明之剝離組合物、剝離程序及矽晶圓上之底層/矽底部抗反射塗料/光阻的剝離結果。比較性實例1與2展示使用含有HF之緩衝氧化物蝕刻劑(BOE;50:1)之剝離程序及剝離結果。比較性實例3與4展示使用含有N-甲基吡咯啶酮及/或氫氧化四甲基銨之商業剝離劑的剝離程序及結果。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S05(自AZ Electronic Materials購得)旋塗於4"矽晶圓上。在加熱板上在225℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為98.7 nm。
在2 L之玻璃燒杯中,裝入6 g氫氧化四甲基銨(TMAH)、108 g N-甲基吡咯啶酮(NMP)、39 g丙二醇、147 g去離子水及30 g三水合氟化四丁基銨。攪拌混合物以混合所有材料且接著加熱且保持於75℃之溫度下。將經塗覆之晶圓浸
入混合物中且將氮氣輕輕鼓泡至溶液中。五分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼視覺檢驗顯示矽底部抗反射塗層完全移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S10(自AZ Electronic Materials購得)旋塗於4"矽晶圓上。在加熱板上在250℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為127.7 nm。
在2 L之玻璃燒杯中,裝入6 g TMAH、108 g NMP、39 g丙二醇、147 g去離子水及30 g三水合氟化四丁基銨。攪拌混合物以混合所有材料且接著加熱且保持於75℃之溫度下。將經塗覆之晶圓浸入混合物中且將氮氣輕輕鼓泡至溶液中。五分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼視覺檢驗顯示矽底部抗反射塗層完全移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
將一層AZ@
ArF-1C5D(自AZ Electronic Materials購得)旋塗於8"矽晶圓上且在200℃下烘焙60秒(FT=37 nm)。接著,以1270 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S05(自AZ Electronic Materials購得)旋塗於底層之上。在加熱板上在225℃下烘焙經塗覆之晶圓90秒以達成
110 nm之矽底部抗反射塗料厚度。接著,將一層AZAX2120光阻(自AZ Electronic Materials購得)旋塗於經固化之層之上。在曝光及顯影之後,獲得在矽晶圓之上之矽底部抗反射塗料/底層之上的圖案化光阻。劈開該晶圓且拾取具有圖案之一片用於剝離研究。
在1 L之玻璃燒杯中,裝入72 g NMP、96 g丙二醇、17 g TMAH及15 g三水合氟化四丁基銨。攪拌混合物以混合所有材料且接著加熱且保持於80℃之溫度下。將經塗覆之晶圓片浸入混合物中且將氮氣輕輕鼓泡至溶液中。十分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼視覺檢驗顯示矽底部抗反射塗層完全移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
將一層SiO2
(厚度469 nm)沈積於4"矽晶圓上。接著,以1240 rpm將合矽底部抗反射塗料調配物AZ@
EXP ArF-S14(自AZ Electronic Materials購得)旋塗於SiO2
層之上。在加熱板上在240℃下烘焙經塗覆之晶圓60秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測含矽底部抗反射塗料調配物之薄膜厚度為100 nm。
在2 L之玻璃燒杯中,裝入6 g TMAH、108 g NMP、39 g丙二醇、147 g去離子水及30 g三水合氟化四丁基銨。攪拌混合物以混合所有材料且接著加熱且保持於75℃之溫度下。將經塗覆之晶圓浸入混合物中且將氮氣輕輕鼓泡至溶液中。五分鐘之後,將晶圓取出且用去離子水沖洗,且乾
燥。由肉眼視覺檢驗顯示矽底部抗反射塗層完全移除且無對SiO2
層之損壞。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
將一層氮化矽(厚度200 nm)沈積於8"矽晶圓上。接著,以1240 rpm將合矽底部抗反射塗料調配物AZ@
EXP ArF-S14(自AZ Electronic Materials購得)旋塗於該氮化矽層之上。在加熱板上在240℃下烘焙經塗覆之晶圓60秒。含矽底部抗反射塗料調配物之薄膜厚度為100 nm。
在2 L之玻璃燒杯中,裝入6 g TMAH、108 g NMP、39 g丙二醇、147 g去離子水及30 g三水合氟化四丁基銨。攪拌混合物以混合所有材料且接著加熱且保持於75℃之溫度下。將經塗覆之晶圓浸入混合物中且將氮氣輕輕鼓泡至溶液中。五分鐘之後,將晶圓取出且用去離子水沖洗,且乾燥。由肉眼視覺檢驗顯示矽底部抗反射塗層完全移除且無對氮化矽層之損壞。此進一步藉由在Nikon顯微鏡下檢驗來證實。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S05(自AZ Electronic Materials購得)旋塗於4"矽晶圓上。在加熱板上在225℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為97.1 nm。
在1 L之HDPE燒杯中,裝入200 mL於含水溶液中之含有
NH4
F及HF之緩衝氧化物蝕刻劑(BOE 50:1,自J.T.Baker購得)。將經塗覆之晶圓(具有平坦邊緣)之下半部浸入緩衝氧化物蝕刻劑中,使晶圓之上半部在液體表面上方。一分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼對下半部晶圓之視覺檢驗並未顯示矽底部抗反射塗料經移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S10(自AZ Electronic Materials購得)旋塗於4"矽晶圓上。在加熱板上在250℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為122.1 nm。
在1 L之HDPE燒杯中裝入200 mL於含水溶液中之含有NH4
F及HF之緩衝氧化物蝕刻劑(BOE 50:1,自J.T.Baker購得)。將經塗覆之晶圓(具有平坦邊緣)之下半部浸入商業移除劑調配物中,使晶圓之上半部在液體表面上方。一分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼對下半部晶圓之視覺檢驗顯示矽底部抗反射塗料完全移除。然而,藉由在Nikon顯微鏡下檢驗及藉由SEM來觀察且證實有殘餘物。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S10(自AZ Electronic Materials購得)旋塗於矽晶圓上。在
加熱板上在250℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為130.2 nm。
在2 L之玻璃燒杯中,裝入300 g AZ@
400T光阻剝離劑(自AZ Electronic Materials購得),將其加熱並保持於75℃。將經塗覆之晶圓浸入剝離劑溶液中且將氮氣輕輕鼓泡至溶液中。二十分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼視覺檢驗指示矽底部抗反射塗層僅部分移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
以1400 rpm將含矽底部抗反射塗料調配物AZ@
EXP ArF-S10(自AZ Electronic Materials購得)旋塗於矽晶圓上。在加熱板上在250℃下烘焙經塗覆之晶圓90秒。使用由J.A.Woollam Co.Inc.製造之VASE橢偏儀量測薄膜厚度為116.3 nm。
在2 L之玻璃燒杯中,裝入200 mL AZ@
400T光阻剝離劑(自AZ Electronic Materials購得)及200 mL AZ@
300 MIF顯影劑(自AZ Electronic Materials購得),將其混合在一起,加熱並保持於75℃下。將經塗覆之晶圓浸入剝離劑溶液中且將氮氣輕輕鼓泡至溶液中。五分鐘之後,將晶圓取出且用去離子水及丙酮沖洗,且乾燥。由肉眼視覺檢驗指示矽底部抗反射塗層僅部分移除。此進一步藉由在Nikon顯微鏡下檢驗及藉由SEM來證實。
本發明之剝離組合物可藉由以多種方式使基板上之抗反射塗料/硬質罩幕層與剝離組合物接觸來用作用於基於矽之抗反射塗料/硬質罩幕層的剝離劑,諸如,藉由浸入剝離浴中或藉由將剝離組合物噴霧至基於矽之抗反射塗料/硬質罩幕層上。通常,剝離時間可在約1-60分鐘,較佳1-30分鐘及更佳1-15分鐘的範圍內,且剝離溫度可在約20℃至約150℃,較佳20℃至100℃之範圍內。藉由裝備、待移除之材料及處理環境確定精確處理細節。
雖然已單獨說明用於自基板剝離抗反射塗層/硬質罩幕層之上述組合物之用途,但應瞭解,本發明之剝離組合物適用於對於熟習此項技術者顯而易見之其他用途,諸如,用於剝離光阻塗料、基於碳之抗反射塗料、基於碳之硬質罩幕材料、來自反應或固化容器之聚合物殘餘物及其類似物中,或用於自表面剝離塗料,諸如油漆及清漆及其類似物。
雖然已關於本發明之較佳實施例解釋本發明,但應理解,熟習此項技術者在閱讀本說明書時將顯而易見其各種修改。因此,應理解本文所揭示之本發明意欲涵蓋屬於隨附申請專利範圍之範疇內的此等修改。
Claims (23)
- 一種剝離組合物,其包含:有機氟化鹽;有機四級銨鹼;及有機溶劑,其中該剝離組合物不含水且可移除含矽塗層,且其中該氟化鹽係選自由二氟化二四級銨鹽;具有下式之化合物:
- 如請求項1之組合物,其中該氟化鹽係選自具有下式之化合物:
- 如請求項1之組合物,其中該氟化鹽為具有下式之化合物:
- 如請求項1之組合物,其中該氟化鹽係選自由1-氟-4-氯甲基-1,4-二氮雜雙環[2.2.2]辛烷雙(四氟硼酸鹽)、1-氟-4-羥基-1,4-二氮雜雙環[2.2.2]辛烷雙(四氟硼酸鹽)、N,N'-二氟-2,2'-聯吡錠雙(四氟硼酸鹽)所組成之群。
- 如請求項1之組合物,其中該有機四級銨鹼為氫氧化未經取代或經取代之脂族銨、氫氧化未經取代或經取代之芳基銨或其混合物。
- 如請求項5之組合物,其中該有機四級銨鹼為氫氧化未 經取代或經取代之四烷基銨。
- 如請求項6之組合物,其中該有機四級銨鹼係選自氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四異丙基銨、氫氧化四丁基銨、氫氧化三甲基乙基銨、氫氧化(2-羥基乙基)三甲基銨、氫氧化(2-羥基乙基)三乙基銨、氫氧化(2-羥基乙基)三丙基銨、氫氧化(1-羥基丙基)三甲基銨、氫氧化乙基三甲基銨、氫氧化二乙基二甲基銨、氫氧化二甲基二乙基銨、氫氧化三甲基(2-羥基乙基)銨、氫氧化三甲基-3-羥基丙基銨、氫氧化三甲基-3-羥基丁基銨、氫氧化三甲基-4-羥基丁基銨、氫氧化三乙基-2-羥基乙基銨、氫氧化三丙基-2-羥基乙基銨、氫氧化三丁基-2-羥基乙基銨、氫氧化二甲基乙基-2-羥基乙基銨、氫氧化二甲基二(2-羥基乙基)銨、氫氧化單甲基三(2-羥基乙基)銨、氫氧化四異丁基銨、氫氧化四-第三丁基銨、氫氧化單甲基-三乙基銨、氫氧化單甲基三丙基銨、氫氧化單甲基三丁基銨、氫氧化單乙基三甲基銨、氫氧化單乙基三丁基銨、氫氧化二甲基二丁基銨、氫氧化三乙基(2-羥基乙基)銨、氫氧化苄基三甲基銨、氫氧化癸基三甲基銨及其混合物。
- 如請求項7之組合物,其中該有機四級銨鹼為氫氧化四甲基銨。
- 如請求項1之組合物,其中該有機溶劑係選自酮;C1 至C10 脂族醇;含芳族基之醇;環狀碳酸酯;脂族或芳族烴;環醚;乙二醇;丙二醇;己二醇;醚醇;乙二醇烷 基醚乙酸酯;2-甲氧基乙基醚;甲氧基丁醇、乙氧基丁醇、甲氧基丙醇及乙氧基丙醇;酯;未經取代或經取代之吡咯啶酮;未經取代或經取代之四氫噻吩-1,1-二氧化物;二甲亞碸、二元酯及γ-丁內酯;酮醚衍生物;酮醇衍生物;內酯;二甲基乙醯胺、二甲基甲醯胺、苯基甲基醚及其混合物。
- 如請求項9之組合物,其中該溶劑係選自1-甲基-2-吡咯啶酮、丙二醇及其混合物。
- 如請求項1之組合物,其中該氟化鹽及該有機四級銨鹼係以約10:1至約0.1:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 如請求項11之組合物,其中該氟化鹽及該有機四級銨鹼係以約7:1至約0.5:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 如請求項12之組合物,其中該氟化鹽及該有機四級銨鹼係以約5:1至約0.75:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 一種剝離組合物,其基本上由以下各物組成:a)有機氟化鹽,其選自以下各物所組成之群:二氟化二四級銨鹽;具有下式之化合物:
- 如請求項14之組合物,其中該有機四級銨鹼係選自氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四異丙基銨、氫氧化四丁基銨、氫氧化三甲基乙基銨、氫氧化(2-羥基乙基)三甲基銨、氫氧化(2-羥基乙基)三乙基銨、氫氧化(2-羥基乙基)三丙基銨、氫氧化(1-羥基丙基)三甲基銨、氫氧化乙基三甲基銨、氫氧化二乙基二甲基銨、氫氧化二甲基二乙基銨、氫氧化三甲基(2-羥基乙基)銨、氫氧化三甲基-3-羥基丙基銨、氫氧化三甲基-3-羥基丁基銨、氫氧化三甲基-4-羥基丁基銨、氫氧化三乙基-2-羥基乙基銨、氫氧化三丙基-2-羥基乙基銨、氫氧化三丁基-2-羥基乙基銨、氫氧化二甲基乙基- 2-羥基乙基銨、氫氧化二甲基二(2-羥基乙基)銨、氫氧化單甲基三(2-羥基乙基)銨、氫氧化四異丁基銨、氫氧化四-第三丁基銨、氫氧化單甲基-三乙基銨、氫氧化單甲基三丙基銨、氫氧化單甲基三丁基銨、氫氧化單乙基三甲基銨、氫氧化單乙基三丁基銨、氫氧化二甲基二丁基銨、氫氧化三乙基(2-羥基乙基)銨、氫氧化苄基三甲基銨及氫氧化癸基三甲基銨及其混合物。
- 如請求項14之組合物,其中該溶劑為丙二醇及1-甲基-2-吡咯啶酮之混合物。
- 如請求項14之組合物,其中該氟化鹽及該有機四級銨鹼係以約10:1至約0.1:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 如請求項17之組合物,其中該氟化鹽及該有機四級銨鹼係以約7:1至約0.5:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 如請求項18之組合物,其中該氟化鹽及該有機四級銨鹼係以約5:1至約0.75:1之氟化鹽:有機四級銨鹼之比率(重量/重量)存在。
- 一種自基板剝離塗料之方法,其包含使該塗料與如請求項1之組合物接觸。
- 如請求項20之方法,其中該塗料為含矽底部抗反射塗料。
- 一種自基板剝離塗料之方法,其包含使該塗料與如請求項14之組合物接觸。
- 如請求項22之方法,其中該塗料為含矽底部抗反射塗料。
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2007
- 2007-01-03 US US11/619,208 patent/US8026201B2/en not_active Expired - Fee Related
- 2007-12-06 TW TW096146530A patent/TWI494709B/zh not_active IP Right Cessation
-
2008
- 2008-01-03 JP JP2009544476A patent/JP5266560B2/ja not_active Expired - Fee Related
- 2008-01-03 EP EP08702204A patent/EP2122418B1/en not_active Not-in-force
- 2008-01-03 CN CNA2008800016483A patent/CN101578556A/zh active Pending
- 2008-01-03 WO PCT/IB2008/000040 patent/WO2008081416A2/en active Application Filing
- 2008-01-03 KR KR1020097013264A patent/KR101389200B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
CN101578556A (zh) | 2009-11-11 |
US20080161217A1 (en) | 2008-07-03 |
JP2010515107A (ja) | 2010-05-06 |
WO2008081416A3 (en) | 2008-11-27 |
KR20090101452A (ko) | 2009-09-28 |
KR101389200B1 (ko) | 2014-04-25 |
EP2122418B1 (en) | 2012-08-08 |
US8026201B2 (en) | 2011-09-27 |
WO2008081416A2 (en) | 2008-07-10 |
EP2122418A2 (en) | 2009-11-25 |
TW200836027A (en) | 2008-09-01 |
JP5266560B2 (ja) | 2013-08-21 |
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