TWI485857B - 薄膜電晶體及具有該薄膜電晶體的顯示裝置 - Google Patents

薄膜電晶體及具有該薄膜電晶體的顯示裝置 Download PDF

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Publication number
TWI485857B
TWI485857B TW097142519A TW97142519A TWI485857B TW I485857 B TWI485857 B TW I485857B TW 097142519 A TW097142519 A TW 097142519A TW 97142519 A TW97142519 A TW 97142519A TW I485857 B TWI485857 B TW I485857B
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TW
Taiwan
Prior art keywords
semiconductor layer
layer
thin film
film transistor
amorphous semiconductor
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TW097142519A
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English (en)
Chinese (zh)
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TW200947707A (en
Inventor
山崎舜平
小林聰
黑川義元
鄉戶宏充
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半導體能源研究所股份有限公司
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Publication of TW200947707A publication Critical patent/TW200947707A/zh
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Publication of TWI485857B publication Critical patent/TWI485857B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW097142519A 2007-11-05 2008-11-04 薄膜電晶體及具有該薄膜電晶體的顯示裝置 TWI485857B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007286942 2007-11-05

Publications (2)

Publication Number Publication Date
TW200947707A TW200947707A (en) 2009-11-16
TWI485857B true TWI485857B (zh) 2015-05-21

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Family Applications (1)

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TW097142519A TWI485857B (zh) 2007-11-05 2008-11-04 薄膜電晶體及具有該薄膜電晶體的顯示裝置

Country Status (5)

Country Link
US (1) US8253138B2 (enExample)
JP (2) JP5674267B2 (enExample)
KR (1) KR101452204B1 (enExample)
TW (1) TWI485857B (enExample)
WO (1) WO2009060922A1 (enExample)

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TWI518913B (zh) 2008-11-07 2016-01-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102473729B (zh) * 2009-07-03 2015-01-28 株式会社半导体能源研究所 制造半导体装置的方法
CN105702688B (zh) * 2009-10-21 2020-09-08 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR20240042252A (ko) * 2009-10-29 2024-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
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KR102113029B1 (ko) 2010-02-26 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130045418A (ko) 2010-04-23 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5852793B2 (ja) * 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
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TWI670711B (zh) * 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
JP5767073B2 (ja) * 2010-10-15 2015-08-19 株式会社半導体エネルギー研究所 エッチング方法及び半導体装置の作製方法
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JP5961391B2 (ja) * 2011-01-26 2016-08-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP2012222261A (ja) * 2011-04-13 2012-11-12 Mitsubishi Electric Corp トランジスタ、その製造方法および表示装置
WO2013001676A1 (ja) 2011-06-30 2013-01-03 パナソニック株式会社 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
KR102012981B1 (ko) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9059219B2 (en) * 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9507968B2 (en) * 2013-03-15 2016-11-29 Cirque Corporation Flying sense electrodes for creating a secure cage for integrated circuits and pathways
KR102235443B1 (ko) * 2014-01-10 2021-04-02 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
CN105633076A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种显示基板及其制作方法和显示装置
JP6706638B2 (ja) * 2018-03-07 2020-06-10 シャープ株式会社 半導体装置およびその製造方法
CN108417583B (zh) * 2018-03-09 2021-10-29 惠科股份有限公司 一种阵列基板的制造方法和阵列基板
US11139562B2 (en) * 2018-09-14 2021-10-05 Innolux Corporation Antenna device
CN110911382B (zh) * 2018-09-14 2021-06-25 群创光电股份有限公司 天线装置
CN108983477B (zh) * 2018-09-27 2021-04-02 武汉华星光电半导体显示技术有限公司 显示模组及其制作方法、电子装置
KR102658174B1 (ko) * 2018-10-18 2024-04-18 삼성디스플레이 주식회사 표시 장치
CN111081718B (zh) * 2019-12-11 2022-06-10 深圳市华星光电半导体显示技术有限公司 一种tft阵列基板和显示面板

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Also Published As

Publication number Publication date
WO2009060922A1 (en) 2009-05-14
KR20100094503A (ko) 2010-08-26
US8253138B2 (en) 2012-08-28
JP2009135482A (ja) 2009-06-18
US20090114917A1 (en) 2009-05-07
JP5674267B2 (ja) 2015-02-25
TW200947707A (en) 2009-11-16
JP5933892B2 (ja) 2016-06-15
JP2015062228A (ja) 2015-04-02
KR101452204B1 (ko) 2014-10-21

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