TWI478278B - 用以生產ｓｏｉ基板及半導體裝置的方法 - Google Patents

用以生產ｓｏｉ基板及半導體裝置的方法 Download PDF

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Publication number
TWI478278B
TWI478278B TW097110074A TW97110074A TWI478278B TW I478278 B TWI478278 B TW I478278B TW 097110074 A TW097110074 A TW 097110074A TW 97110074 A TW97110074 A TW 97110074A TW I478278 B TWI478278 B TW I478278B
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Taiwan
Prior art keywords
substrate
layer
single crystal
crystal semiconductor
semiconductor substrate
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TW097110074A
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English (en)
Chinese (zh)
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TW200903712A (en
Inventor
Yasuhiro Jinbo
Hironobu Shoji
Hideto Ohnuma
Shunpei Yamazaki
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Semiconductor Energy Lab
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Publication of TW200903712A publication Critical patent/TW200903712A/zh
Application granted granted Critical
Publication of TWI478278B publication Critical patent/TWI478278B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW097110074A 2007-04-20 2008-03-21 用以生產ｓｏｉ基板及半導體裝置的方法 TWI478278B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007112239 2007-04-20

Publications (2)

Publication Number Publication Date
TW200903712A TW200903712A (en) 2009-01-16
TWI478278B true TWI478278B (zh) 2015-03-21

Family

ID=39872629

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097110074A TWI478278B (zh) 2007-04-20 2008-03-21 用以生產ｓｏｉ基板及半導體裝置的方法
TW103146545A TWI527151B (zh) 2007-04-20 2008-03-21 用以生產ｓｏｉ基板及半導體裝置的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103146545A TWI527151B (zh) 2007-04-20 2008-03-21 用以生產ｓｏｉ基板及半導體裝置的方法

Country Status (7)

Country Link
US (4) US7709337B2 (enExample)
EP (1) EP2140480A4 (enExample)
JP (2) JP5490371B2 (enExample)
KR (1) KR101447048B1 (enExample)
CN (1) CN101663733B (enExample)
TW (2) TWI478278B (enExample)
WO (1) WO2008132895A1 (enExample)

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US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法
JP5464843B2 (ja) * 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US7858495B2 (en) * 2008-02-04 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
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JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
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KR20120020526A (ko) * 2010-08-30 2012-03-08 삼성전자주식회사 도전막 매립형 기판, 그 형성 방법, 및 이를 이용하는 반도체 소자의 제조 방법
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JP2015111603A (ja) * 2012-03-22 2015-06-18 シャープ株式会社 半導体装置の製造方法、半導体装置、及び表示装置
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JP6175294B2 (ja) * 2012-06-25 2017-08-02 株式会社半導体エネルギー研究所 機能性基板の作製方法および半導体装置の作製方法
WO2014087742A1 (ja) * 2012-12-04 2014-06-12 シャープ株式会社 半導体装置の製造方法及び半導体装置
JP6119325B2 (ja) * 2013-03-14 2017-04-26 セイコーエプソン株式会社 干渉フィルター、干渉フィルターの製造方法、光学モジュール、電子機器、及び接合基板
KR102134845B1 (ko) * 2013-07-12 2020-07-17 삼성디스플레이 주식회사 유기 발광 디스플레이 장치와, 이의 제조 방법
KR102392059B1 (ko) * 2013-07-29 2022-04-28 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102099881B1 (ko) 2013-09-03 2020-05-15 삼성전자 주식회사 반도체 소자 및 그 제조 방법
CN104808370B (zh) * 2015-05-22 2017-10-31 合肥京东方光电科技有限公司 一种对盒设备、对位方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
US9806025B2 (en) * 2015-12-29 2017-10-31 Globalfoundries Inc. SOI wafers with buried dielectric layers to prevent Cu diffusion
JP6427712B2 (ja) * 2016-03-25 2018-11-21 日本碍子株式会社 接合方法
US10957722B2 (en) * 2016-05-26 2021-03-23 Joled Inc. Method of manufacturing flexible device using multidirectional oblique irradiation of an interface between a support substrate and a flexible substrate
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CN110112192B (zh) * 2019-04-29 2021-07-13 云谷（固安）科技有限公司 一种有机发光显示模组及电子设备
CN110223981A (zh) * 2019-06-05 2019-09-10 中国科学院上海微系统与信息技术研究所 一种柔性soi器件结构及其制备方法
CN113921694A (zh) * 2020-07-10 2022-01-11 济南晶正电子科技有限公司 一种制备复合压电薄膜的方法
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Also Published As

Publication number Publication date
WO2008132895A1 (en) 2008-11-06
US20100173473A1 (en) 2010-07-08
US8951878B2 (en) 2015-02-10
US8629031B2 (en) 2014-01-14
JP2008288578A (ja) 2008-11-27
TW201515146A (zh) 2015-04-16
JP5116725B2 (ja) 2013-01-09
EP2140480A4 (en) 2015-04-22
TWI527151B (zh) 2016-03-21
US8399329B2 (en) 2013-03-19
US20140087543A1 (en) 2014-03-27
US20080261379A1 (en) 2008-10-23
JP2009194400A (ja) 2009-08-27
CN101663733B (zh) 2013-02-27
JP5490371B2 (ja) 2014-05-14
EP2140480A1 (en) 2010-01-06
KR101447048B1 (ko) 2014-10-06
KR20090130091A (ko) 2009-12-17
US7709337B2 (en) 2010-05-04
TW200903712A (en) 2009-01-16
US20130149840A1 (en) 2013-06-13
CN101663733A (zh) 2010-03-03

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