TWI475621B - 晶片安裝技術 - Google Patents

晶片安裝技術 Download PDF

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Publication number
TWI475621B
TWI475621B TW096143013A TW96143013A TWI475621B TW I475621 B TWI475621 B TW I475621B TW 096143013 A TW096143013 A TW 096143013A TW 96143013 A TW96143013 A TW 96143013A TW I475621 B TWI475621 B TW I475621B
Authority
TW
Taiwan
Prior art keywords
wafer
microns
soldering elements
buffer layers
layer
Prior art date
Application number
TW096143013A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832577A (en
Inventor
塞門J. 史黛西
Original Assignee
劍橋矽晶片無線電有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 劍橋矽晶片無線電有限公司 filed Critical 劍橋矽晶片無線電有限公司
Publication of TW200832577A publication Critical patent/TW200832577A/zh
Application granted granted Critical
Publication of TWI475621B publication Critical patent/TWI475621B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • H10W72/248Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
TW096143013A 2006-12-13 2007-11-14 晶片安裝技術 TWI475621B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0624888A GB2444775B (en) 2006-12-13 2006-12-13 Chip mounting

Publications (2)

Publication Number Publication Date
TW200832577A TW200832577A (en) 2008-08-01
TWI475621B true TWI475621B (zh) 2015-03-01

Family

ID=37712074

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143013A TWI475621B (zh) 2006-12-13 2007-11-14 晶片安裝技術

Country Status (5)

Country Link
US (2) US9177885B2 (https=)
JP (2) JP5623080B2 (https=)
GB (1) GB2444775B (https=)
TW (1) TWI475621B (https=)
WO (1) WO2008071905A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2444775B (en) * 2006-12-13 2011-06-08 Cambridge Silicon Radio Ltd Chip mounting
GB2482894B (en) 2010-08-18 2014-11-12 Cambridge Silicon Radio Ltd Interconnection structure
US9935038B2 (en) 2012-04-11 2018-04-03 Taiwan Semiconductor Manufacturing Company Semiconductor device packages and methods
US11189538B2 (en) * 2018-09-28 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with polyimide packaging and manufacturing method

Citations (12)

* Cited by examiner, † Cited by third party
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JP2000216290A (ja) * 1999-01-26 2000-08-04 Hitachi Cable Ltd 半導体パッケ―ジ
JP2000323628A (ja) * 1999-05-10 2000-11-24 Hitachi Ltd 半導体装置とその製造方法、およびこれを用いた電子機器
US6277669B1 (en) * 1999-09-15 2001-08-21 Industrial Technology Research Institute Wafer level packaging method and packages formed
JP2001257282A (ja) * 2000-03-09 2001-09-21 Hitachi Chem Co Ltd 半導体装置の製造方法及び半導体装置
US6462426B1 (en) * 2000-12-14 2002-10-08 National Semiconductor Corporation Barrier pad for wafer level chip scale packages
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005039260A (ja) * 2003-07-01 2005-02-10 Nec Corp 応力緩和構造とその形成方法、応力緩和シートとその製造方法、及び半導体装置並びに電子機器
JP2005191604A (ja) * 1997-01-17 2005-07-14 Seiko Epson Corp 半導体装置及びその製造方法
JP2005317685A (ja) * 2004-04-28 2005-11-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20050258539A1 (en) * 2004-05-20 2005-11-24 Nec Electronics Corporation Semiconductor device
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器
EP1677585A1 (en) * 2004-01-30 2006-07-05 Ibiden Co., Ltd. Multilayer printed wiring board and method for manufacturing same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
TW448524B (en) * 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
JP3795628B2 (ja) * 1997-05-16 2006-07-12 シチズン時計株式会社 半導体チップを搭載する配線基板の製造方法
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
JP3640876B2 (ja) * 2000-09-19 2005-04-20 株式会社ルネサステクノロジ 半導体装置及び半導体装置の実装構造体
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
TW574752B (en) * 2000-12-25 2004-02-01 Hitachi Ltd Semiconductor module
US6518675B2 (en) * 2000-12-29 2003-02-11 Samsung Electronics Co., Ltd. Wafer level package and method for manufacturing the same
US6433427B1 (en) 2001-01-16 2002-08-13 Industrial Technology Research Institute Wafer level package incorporating dual stress buffer layers for I/O redistribution and method for fabrication
JP2003020404A (ja) * 2001-07-10 2003-01-24 Hitachi Ltd 耐熱性低弾性率材およびそれを用いた装置
TW517360B (en) * 2001-12-19 2003-01-11 Ind Tech Res Inst Enhanced type wafer level package structure and its manufacture method
US6805974B2 (en) * 2002-02-15 2004-10-19 International Business Machines Corporation Lead-free tin-silver-copper alloy solder composition
JP2003298196A (ja) * 2002-04-03 2003-10-17 Japan Gore Tex Inc プリント配線板用誘電体フィルム、多層プリント基板および半導体装置
US6940177B2 (en) 2002-05-16 2005-09-06 Dow Corning Corporation Semiconductor package and method of preparing same
US20040089470A1 (en) * 2002-11-12 2004-05-13 Nec Corporation Printed circuit board, semiconductor package, base insulating film, and manufacturing method for interconnect substrate
KR100548581B1 (ko) * 2004-07-22 2006-02-02 주식회사 하이닉스반도체 웨이퍼 레벨 칩 스케일 패키지
JP4471213B2 (ja) * 2004-12-28 2010-06-02 Okiセミコンダクタ株式会社 半導体装置およびその製造方法
US7326638B2 (en) * 2005-01-19 2008-02-05 New Japan Radio Co., Ltd. Method for manufacturing semiconductor device
US7361990B2 (en) * 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
GB2444775B (en) * 2006-12-13 2011-06-08 Cambridge Silicon Radio Ltd Chip mounting

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191604A (ja) * 1997-01-17 2005-07-14 Seiko Epson Corp 半導体装置及びその製造方法
JP2000216290A (ja) * 1999-01-26 2000-08-04 Hitachi Cable Ltd 半導体パッケ―ジ
JP2000323628A (ja) * 1999-05-10 2000-11-24 Hitachi Ltd 半導体装置とその製造方法、およびこれを用いた電子機器
US6277669B1 (en) * 1999-09-15 2001-08-21 Industrial Technology Research Institute Wafer level packaging method and packages formed
JP2001257282A (ja) * 2000-03-09 2001-09-21 Hitachi Chem Co Ltd 半導体装置の製造方法及び半導体装置
US6462426B1 (en) * 2000-12-14 2002-10-08 National Semiconductor Corporation Barrier pad for wafer level chip scale packages
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005039260A (ja) * 2003-07-01 2005-02-10 Nec Corp 応力緩和構造とその形成方法、応力緩和シートとその製造方法、及び半導体装置並びに電子機器
EP1677585A1 (en) * 2004-01-30 2006-07-05 Ibiden Co., Ltd. Multilayer printed wiring board and method for manufacturing same
JP2005317685A (ja) * 2004-04-28 2005-11-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20050258539A1 (en) * 2004-05-20 2005-11-24 Nec Electronics Corporation Semiconductor device
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器

Also Published As

Publication number Publication date
US9177885B2 (en) 2015-11-03
JP5623080B2 (ja) 2014-11-12
GB2444775B (en) 2011-06-08
TW200832577A (en) 2008-08-01
JP2010514148A (ja) 2010-04-30
JP2014112694A (ja) 2014-06-19
US20100013093A1 (en) 2010-01-21
GB0624888D0 (en) 2007-01-24
JP5806286B2 (ja) 2015-11-10
GB2444775A (en) 2008-06-18
WO2008071905B1 (en) 2008-08-21
US20160086907A1 (en) 2016-03-24
US9659894B2 (en) 2017-05-23
WO2008071905A1 (en) 2008-06-19

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