TWI472014B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI472014B
TWI472014B TW99104435A TW99104435A TWI472014B TW I472014 B TWI472014 B TW I472014B TW 99104435 A TW99104435 A TW 99104435A TW 99104435 A TW99104435 A TW 99104435A TW I472014 B TWI472014 B TW I472014B
Authority
TW
Taiwan
Prior art keywords
metal wiring
source region
semiconductor device
supply line
potential supply
Prior art date
Application number
TW99104435A
Other languages
English (en)
Chinese (zh)
Other versions
TW201103124A (en
Inventor
山本祐廣
小山威
Original Assignee
精工電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 精工電子有限公司 filed Critical 精工電子有限公司
Publication of TW201103124A publication Critical patent/TW201103124A/zh
Application granted granted Critical
Publication of TWI472014B publication Critical patent/TWI472014B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW99104435A 2009-02-23 2010-02-11 半導體裝置 TWI472014B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009039345 2009-02-23
JP2010016340A JP5603089B2 (ja) 2009-02-23 2010-01-28 半導体装置

Publications (2)

Publication Number Publication Date
TW201103124A TW201103124A (en) 2011-01-16
TWI472014B true TWI472014B (zh) 2015-02-01

Family

ID=42101475

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99104435A TWI472014B (zh) 2009-02-23 2010-02-11 半導體裝置

Country Status (6)

Country Link
US (1) US8373231B2 (enExample)
EP (1) EP2221875B1 (enExample)
JP (1) JP5603089B2 (enExample)
KR (1) KR101629968B1 (enExample)
CN (1) CN101814501B (enExample)
TW (1) TWI472014B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
CN102446961B (zh) * 2011-12-09 2014-05-28 无锡中星微电子有限公司 包含功率器件的半导体装置及其制备方法
CN102854643B (zh) * 2012-09-04 2015-11-25 深圳市华星光电技术有限公司 一种液晶显示面板及其制造方法
JP6013876B2 (ja) 2012-10-30 2016-10-25 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP6033054B2 (ja) 2012-11-22 2016-11-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP5923046B2 (ja) * 2013-01-11 2016-05-24 株式会社東芝 半導体装置の製造方法
JP2014154595A (ja) * 2013-02-05 2014-08-25 Seiko Instruments Inc 半導体装置
JP6100026B2 (ja) * 2013-03-06 2017-03-22 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP2014229737A (ja) 2013-05-22 2014-12-08 株式会社東芝 半導体装置
TWI532191B (zh) * 2013-12-31 2016-05-01 友達光電股份有限公司 薄膜電晶體結構
CN107851583B (zh) * 2015-08-21 2021-04-02 日立汽车系统株式会社 半导体装置、半导体集成电路以及负载驱动装置
CN109148555B (zh) * 2017-06-27 2021-08-31 深圳尚阳通科技有限公司 超结器件及其制造方法
CN109148556B (zh) * 2017-06-27 2022-02-15 深圳尚阳通科技有限公司 超结器件及其制造方法
CN109148557B (zh) * 2017-06-27 2021-06-11 深圳尚阳通科技有限公司 超结器件及其制造方法
CN109148558B (zh) * 2017-06-27 2021-08-10 深圳尚阳通科技有限公司 超结器件及其制造方法
CN108879634B (zh) * 2018-06-30 2022-03-04 唯捷创芯(天津)电子技术股份有限公司 一种浪涌保护器件及其组成的芯片、通信终端
JP7144609B2 (ja) * 2019-05-20 2022-09-29 日立Astemo株式会社 半導体装置および車載用電子制御装置
JP2021141138A (ja) * 2020-03-03 2021-09-16 キオクシア株式会社 半導体装置
CA3114695A1 (en) * 2020-04-08 2021-10-08 National Research Council Of Canada Distributed inductance integrated field effect transistor structure
CN114664725B (zh) * 2020-12-23 2025-07-29 华润微电子（重庆）有限公司 GaN器件互联结构及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745829A (ja) * 1993-07-28 1995-02-14 Ricoh Co Ltd 半導体集積回路装置
TW488061B (en) * 2000-01-04 2002-05-21 Sarnoff Corp Apparatus for current ballasting ESD sensitive devices
TW578447B (en) * 2003-04-04 2004-03-01 Arima Computer Corp An electrostatic discharge protection structure for a multi-hole structure
US20050029597A1 (en) * 2003-08-08 2005-02-10 Conexant Systems, Inc. Ballasting MOSFETs using staggered and segmented diffusion regions
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置
US20090050968A1 (en) * 2007-08-22 2009-02-26 Hiroaki Takasu Semiconductor device
CN201213133Y (zh) * 2008-02-20 2009-03-25 和舰科技(苏州)有限公司 一种更均匀导通的电容耦合静电放电防护器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2865132B2 (ja) * 1996-07-19 1999-03-08 日本電気株式会社 半導体装置の入出力静電保護回路
JP4144225B2 (ja) * 2002-01-29 2008-09-03 株式会社デンソー ダイオードおよびその製造方法
JP2004311670A (ja) * 2003-04-07 2004-11-04 Toshiba Lsi System Support Kk 半導体装置
JP2006278677A (ja) * 2005-03-29 2006-10-12 Mitsumi Electric Co Ltd 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745829A (ja) * 1993-07-28 1995-02-14 Ricoh Co Ltd 半導体集積回路装置
TW488061B (en) * 2000-01-04 2002-05-21 Sarnoff Corp Apparatus for current ballasting ESD sensitive devices
TW578447B (en) * 2003-04-04 2004-03-01 Arima Computer Corp An electrostatic discharge protection structure for a multi-hole structure
US20050029597A1 (en) * 2003-08-08 2005-02-10 Conexant Systems, Inc. Ballasting MOSFETs using staggered and segmented diffusion regions
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置
US20090050968A1 (en) * 2007-08-22 2009-02-26 Hiroaki Takasu Semiconductor device
CN201213133Y (zh) * 2008-02-20 2009-03-25 和舰科技(苏州)有限公司 一种更均匀导通的电容耦合静电放电防护器件

Also Published As

Publication number Publication date
KR101629968B1 (ko) 2016-06-13
JP5603089B2 (ja) 2014-10-08
EP2221875A2 (en) 2010-08-25
JP2010219504A (ja) 2010-09-30
EP2221875A3 (en) 2011-10-19
US8373231B2 (en) 2013-02-12
EP2221875B1 (en) 2012-12-19
TW201103124A (en) 2011-01-16
CN101814501B (zh) 2014-09-03
US20100213549A1 (en) 2010-08-26
CN101814501A (zh) 2010-08-25
KR20100096027A (ko) 2010-09-01

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