TWI470380B - Anti - corrosive photoresist release agent composition - Google Patents

Anti - corrosive photoresist release agent composition Download PDF

Info

Publication number
TWI470380B
TWI470380B TW98137945A TW98137945A TWI470380B TW I470380 B TWI470380 B TW I470380B TW 98137945 A TW98137945 A TW 98137945A TW 98137945 A TW98137945 A TW 98137945A TW I470380 B TWI470380 B TW I470380B
Authority
TW
Taiwan
Prior art keywords
corrosion
photoresist stripper
mass
stripper composition
group
Prior art date
Application number
TW98137945A
Other languages
English (en)
Chinese (zh)
Other versions
TW201035702A (en
Inventor
Hayato Yamasaki
Toyozo Fujioka
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW201035702A publication Critical patent/TW201035702A/zh
Application granted granted Critical
Publication of TWI470380B publication Critical patent/TWI470380B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW98137945A 2008-11-28 2009-11-09 Anti - corrosive photoresist release agent composition TWI470380B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008305176 2008-11-28

Publications (2)

Publication Number Publication Date
TW201035702A TW201035702A (en) 2010-10-01
TWI470380B true TWI470380B (zh) 2015-01-21

Family

ID=42225581

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98137945A TWI470380B (zh) 2008-11-28 2009-11-09 Anti - corrosive photoresist release agent composition

Country Status (5)

Country Link
JP (1) JP5302334B2 (sv)
KR (1) KR20110096126A (sv)
CN (1) CN102301282B (sv)
TW (1) TWI470380B (sv)
WO (1) WO2010061701A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
KR20150146285A (ko) * 2014-06-23 2015-12-31 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
WO2018088511A1 (ja) * 2016-11-11 2018-05-17 株式会社カネコ化学 硬化性樹脂の硬化物の剥離剤、硬化性樹脂の硬化物の膨潤剤及び硬化性樹脂の硬化フォームの減容剤
KR102511277B1 (ko) * 2017-01-13 2023-03-17 닛산 가가쿠 가부시키가이샤 아미드 용매를 포함하는 레지스트 하층막 형성조성물
CN111638632B (zh) * 2020-06-24 2022-08-05 福建省佑达环保材料有限公司 一种cf工序光刻胶返工液组合物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222118A (ja) * 1999-12-01 2001-08-17 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液およびこれを用いた基板の処理方法
TW508478B (en) * 2000-04-26 2002-11-01 Dongjin Semichem Co Ltd Resist stripper composition
JP2003015320A (ja) * 2001-06-29 2003-01-17 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
JP2005077526A (ja) * 2003-08-28 2005-03-24 Sony Corp 銀及び／又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100964801B1 (ko) * 2003-06-26 2010-06-22 동우 화인켐 주식회사 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트박리방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222118A (ja) * 1999-12-01 2001-08-17 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液およびこれを用いた基板の処理方法
TW508478B (en) * 2000-04-26 2002-11-01 Dongjin Semichem Co Ltd Resist stripper composition
JP2003015320A (ja) * 2001-06-29 2003-01-17 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
JP2005077526A (ja) * 2003-08-28 2005-03-24 Sony Corp 銀及び／又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置

Also Published As

Publication number Publication date
JP5302334B2 (ja) 2013-10-02
JPWO2010061701A1 (ja) 2012-04-26
WO2010061701A1 (ja) 2010-06-03
TW201035702A (en) 2010-10-01
KR20110096126A (ko) 2011-08-29
CN102301282A (zh) 2011-12-28
CN102301282B (zh) 2014-03-05

Similar Documents

Publication Publication Date Title
TW552481B (en) Non-corrosive stripping and cleaning composition
KR100857865B1 (ko) 세정 제제
JP4750807B2 (ja) 半導体基材用洗浄剤
JP4741315B2 (ja) ポリマー除去組成物
WO2015056428A1 (ja) レジスト剥離液
TWI470380B (zh) Anti - corrosive photoresist release agent composition
JP2009224793A (ja) はく離及び洗浄用の組成物並びにそれらの使用
PH12016000330A1 (en) Cleaning formulations
JP2013008042A (ja) レゾルシノールを含有する剥離溶液を用いた金属保護の改善
KR101691850B1 (ko) 포토레지스트 스트리퍼 조성물
JP3255551B2 (ja) レジスト用剥離液組成物
TW439013B (en) Photoresist stripping composition
TWI417683B (zh) 用於微電子基板之穩定化，非水性清潔組合物
KR20160108109A (ko) 레지스트 박리액 조성물
KR101399502B1 (ko) 티에프티 엘시디용 열경화성 수지 박리액 조성물
KR100544889B1 (ko) 포토레지스트용 스트리퍼 조성물
JP2008519310A (ja) アルミニウム含有基板に使用するためのポストエッチ洗浄組成物
CN105824201B (zh) 抗蚀剂剥离剂组合物
CN102103334B (zh) 抗蚀剂剥离剂组合物
KR101721262B1 (ko) 레지스트 박리액 조성물 및 그를 이용한 박리방법
KR20080098310A (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
KR102572751B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101341746B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
TWI516879B (zh) 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法
JP4415228B2 (ja) レジスト剥離液用組成物

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees