TWI470380B - Anti - corrosive photoresist release agent composition - Google Patents

Anti - corrosive photoresist release agent composition Download PDF

Info

Publication number
TWI470380B
TWI470380B TW98137945A TW98137945A TWI470380B TW I470380 B TWI470380 B TW I470380B TW 98137945 A TW98137945 A TW 98137945A TW 98137945 A TW98137945 A TW 98137945A TW I470380 B TWI470380 B TW I470380B
Authority
TW
Taiwan
Prior art keywords
corrosion
photoresist stripper
mass
stripper composition
group
Prior art date
Application number
TW98137945A
Other languages
Chinese (zh)
Other versions
TW201035702A (en
Inventor
Hayato Yamasaki
Toyozo Fujioka
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW201035702A publication Critical patent/TW201035702A/en
Application granted granted Critical
Publication of TWI470380B publication Critical patent/TWI470380B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Description

防蝕性光阻剝離劑組成物Anti-corrosion photoresist stripper composition

本發明係有關防蝕性光阻剝離劑組成物,特別係藉由含有特定的防蝕劑,提供具優異防蝕效果的防蝕性光阻剝離劑組成物。The present invention relates to a composition of an anti-corrosive photoresist stripper, in particular, an anti-corrosive photoresist stripper composition having an excellent anti-corrosion effect by containing a specific anticorrosive agent.

至今已開發了以簡單地剝除塗佈於無機質基體上的光阻為目的的各式各樣的剝離劑。Various release agents have been developed so far for the purpose of simply peeling off the photoresist applied to the inorganic substrate.

針對該等剝離劑,由製造高精度的電路配線之觀點而言,要求於進行剝離時,不腐蝕使用為金屬配線的鋁、銅或無機質基體而可剝離光阻。為滿足該等要求,正檢討添加安息香酸及酢酸等的羧酸、螯合化合物、山梨糖醇等的糖類、兒茶酚等的聚羥基芳香族作為防蝕劑之方法。From the viewpoint of producing high-precision circuit wiring, it is required to peel off the photoresist without etching the aluminum, copper or inorganic substrate which is a metal wiring. In order to satisfy these requirements, a method of adding a carboxylic acid such as benzoic acid or citric acid, a chelating compound, a saccharide such as sorbitol, or a polyhydroxy aromatic such as catechol as an anticorrosive agent is being examined.

液晶顯示器多採用鋁配線,但近年來伴隨液晶顯示器的大型化,自成本面及電視薄型化觀點,正檢討採用較鋁電阻更小的銅配線。因此期望不僅是鋁,對銅亦同樣具有優異防蝕效果的光阻剝離劑。然而目前尚未得知以對銅及鋁二者可發揮充分防蝕效果的防蝕配方所調配的剝離劑。In the case of the liquid crystal display, the aluminum wiring is often used. In recent years, with the increase in the size of the liquid crystal display, it has been reviewed that copper wiring having a smaller aluminum resistance is being used from the viewpoint of the cost surface and the thin film. Therefore, it is desired to have a photoresist stripper which is not only aluminum but also has an excellent anti-corrosion effect on copper. However, there has not been known a release agent formulated with an anticorrosive formulation which exhibits sufficient anticorrosive effect on both copper and aluminum.

專利文件1中記載有各式各樣的防蝕劑,亦有芳香族羥基化合物亦可與糖類併用之記載,但該防蝕劑配方並無具體的實施例。具體防蝕配方僅見使用2,3-二羥基萘(2,3-DHN)與苯甲酸以及鄰苯二甲酸或磷酸(螯合化合物)的記載。另外雖確認對鋁的防蝕效果,但並未確認對銅的防蝕效果。Patent Document 1 describes various types of corrosion inhibitors, and aromatic hydroxy compounds may also be used in combination with saccharides. However, there is no specific embodiment of the corrosion inhibitor formulation. Specific corrosion protection formulations are only described using 2,3-dihydroxynaphthalene (2,3-DHN) with benzoic acid and phthalic acid or phosphoric acid (chelating compound). Further, although the anticorrosive effect on aluminum was confirmed, the anticorrosive effect on copper was not confirmed.

專利文件2中記載使用作為防腐蝕劑的糖(直鏈多元醇)及芳香族羥基化合物,但芳香族羥基化合物與糖併用所構成的剝離液組成物,並未具體揭示於實施例等之中。In Patent Document 2, a sugar (linear polyol) and an aromatic hydroxy compound which are anticorrosive agents are used, but a composition of a peeling liquid composed of an aromatic hydroxy compound and a saccharide is not specifically disclosed in Examples and the like.

專利文件3中雖揭示含糖類的剝離液組成物,但針對使用芳香族羥基化合物,並無任何記載。Although the condensed liquid composition containing a saccharide is disclosed in Patent Document 3, there is no description about the use of the aromatic hydroxy compound.

進而專利文件7係有關含有極性有機溶媒及有機羥基化胺化合物等非水性的洗淨組成物,雖有有關以2個以上的羥基與糖類及芳香環直接鍵結的芳基化合物等的記載,但於實施例等之中,並未有針對芳香族羥基化合物與糖併用所構成的剝離劑組成物的具體揭示。Further, Patent Document 7 relates to a non-aqueous cleaning composition containing a polar organic solvent and an organic hydroxylated amine compound, and is described as an aryl compound in which two or more hydroxyl groups are directly bonded to a saccharide or an aromatic ring. However, in the examples and the like, there is no specific disclosure of a release agent composition composed of an aromatic hydroxy compound and a sugar.

專利文件1:特開2005-70230號公報Patent Document 1: Special Publication No. 2005-70230

專利文件2:特開2005-43874號公報Patent Document 2: JP-A-2005-43874

專利文件3:特開2000-241991號公報Patent Document 3: JP-A-2000-241991

專利文件4:特開平9-319098號公報Patent Document 4: JP-A-9-319098

專利文件5:特開2007-514983號公報Patent Document 5: JP-A-2007-514983

專利文件6:特開平8-262746號公報Patent Document 6: Japanese Patent Publication No. 8-262746

專利文件7:特表2007-514983號公報Patent Document 7: Special Report 2007-514983

本發明為解決前述課題,以提供對銅及鋁任一種,皆可於廣幅的溫度範圍或於水的存在與不存在的任一狀況下,表現優異防蝕效果的防蝕性光阻剝離劑組成物為目的。In order to solve the above problems, the present invention provides an anti-corrosion photoresist stripper which exhibits an excellent anti-corrosion effect in any of copper and aluminum in a wide temperature range or in the presence or absence of water. For the purpose.

本發明團隊為達成前述目的進行專心研究後,發現藉由採用使用了作為防蝕劑的芳香族聚羥基化合物與糖類之組合的防蝕性光阻剝離劑組成物,可解決前述課題,並完成本發明。The inventors of the present invention have conducted intensive studies to achieve the above object, and have found that the above problems can be solved by using an anticorrosive photoresist stripper composition using a combination of an aromatic polyhydroxy compound as a corrosion inhibitor and a saccharide, and the present invention is completed. .

亦即本發明係提供,That is, the present invention provides,

1.一種防蝕性光阻剝離劑組成物,其係含有極性有機溶劑(A)、有機胺化合物(B)、及由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C),An anti-corrosion photoresist stripper composition comprising a polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C) comprising a combination of an aromatic polyhydroxy compound and a saccharide,

2.如前述1之防蝕性光阻剝離劑組成物,其係含有極性有機溶劑(A)、有機胺化合物(B)、由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C)及水,2. The anti-corrosion photoresist stripper composition according to the above 1, which comprises a polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide. And water,

3.如前述1或2之防蝕性光阻剝離劑組成物,其係僅由極性有機溶劑(A)、有機胺化合物(B)、由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C)及水所構成,3. The anti-corrosion photoresist stripper composition according to the above 1 or 2, which is an anticorrosive agent composed only of a polar organic solvent (A), an organic amine compound (B), and a combination of an aromatic polyhydroxy compound and a saccharide. (C) and water,

4.如前述1~3中任一項防蝕性光阻剝離劑組成物,其中前述極性有機溶劑(A)為醯胺系溶劑,4. The anti-corrosion photoresist stripper composition according to any one of the above 1 to 3, wherein the polar organic solvent (A) is a guanamine solvent.

5.如前述1~4任一項之防蝕性光阻剝離劑組成物,其中前述有機胺化合物(B)為選自單乙醇胺、N-甲基乙醇胺及N,N-二甲基乙醇胺之1種以上之有機胺化合物,5. The anti-corrosion photoresist stripper composition according to any one of the above 1 to 4, wherein the organic amine compound (B) is one selected from the group consisting of monoethanolamine, N-methylethanolamine and N,N-dimethylethanolamine. More than one kind of organic amine compound,

6.如前述1~5之防蝕性光阻剝離劑組成物,其中前述芳香族聚羥基化合物為以下述一般式(a)表示,6. The anti-corrosion photoresist stripper composition according to the above 1 to 5, wherein the aromatic polyhydroxy compound is represented by the following general formula (a).

Rm -Ar-(OH)n …(a)R m -Ar-(OH) n ...(a)

(式中,R係烷基或芳基,Ar係芳香族烴結構,m係0~4之整數,n係2~6之整數),(wherein R is an alkyl group or an aryl group, an Ar-based aromatic hydrocarbon structure, m is an integer of 0 to 4, and n is an integer of 2 to 6),

7.如前述1~6任一項之防蝕性光阻剝離劑組成物,其中前述糖類為選自木糖醇、山梨糖醇、阿糖醇、甘露糖醇、葡萄糖及半乳糖之1種以上之糖類,7. The anti-corrosion photoresist stripper composition according to any one of the above 1 to 6, wherein the saccharide is one or more selected from the group consisting of xylitol, sorbitol, arabitol, mannitol, glucose, and galactose. Sugar,

8.如前述1~7任一項之防蝕性光阻剝離劑組成物,其中前述防蝕劑(C)為以質量比9:1~1:9的比例含有芳香族聚羥基化合物與糖類,及8. The anti-corrosion photoresist stripper composition according to any one of the above 1 to 7, wherein the corrosion inhibitor (C) contains an aromatic polyhydroxy compound and a saccharide in a ratio of 9:1 to 1:9 by mass, and

9.如前述1~8任一項之防蝕性光阻剝離組成物,其中前述極性有機溶劑(A)含有19~95質量%、前述有機胺化合物(B)含有4~80質量%及前述防蝕劑(C)含有0.001~10質量%。9. The anti-corrosive photoresist stripping composition according to any one of the above 1 to 8, wherein the polar organic solvent (A) contains 19 to 95% by mass, the organic amine compound (B) contains 4 to 80% by mass, and the foregoing corrosion protection The agent (C) is contained in an amount of 0.001 to 10% by mass.

根據本發明,對銅及鋁任一種,皆可於廣幅的溫度範圍或於水的存在與不存在的任一狀況下,提供表現優異防蝕效果的防蝕性光阻剝離劑組成物。According to the present invention, any of copper and aluminum can provide an anti-corrosive photoresist release agent composition exhibiting an excellent anti-corrosion effect in a wide temperature range or in the presence or absence of water.

[實施發明最優良的方式][The best way to implement the invention]

本發明之防蝕性光阻剝離劑組成物,係含有極性有機溶劑(A)、有機胺化合物(B)、及由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C)。The anticorrosive photoresist stripper composition of the present invention contains a polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide.

前述的極性有機溶劑(A),若為可均勻溶解有機胺化合物及芳香族聚羥基化合物與糖類則無特限定,可舉出醯胺系溶劑、醚醇系溶劑、醇系溶劑、酯系溶劑、二甲基亞碸(DMSO)等。醯胺系溶劑的具體例可舉出N-甲基-2-咯烷酮(NMP)、二甲基甲醯胺(DMF)、以下述一般式(1)表示的化合物等。特別以下述一般式的醯胺系溶劑為佳,具體而言以3-甲氧基-N,N-二甲基丙醯胺、3-丁氧基-N,N-二甲基丙醯胺更佳。The polar organic solvent (A) is not particularly limited as long as it can uniformly dissolve the organic amine compound and the aromatic polyhydroxy compound and the saccharide, and examples thereof include a guanamine solvent, an ether alcohol solvent, an alcohol solvent, and an ester solvent. , dimethyl hydrazine (DMSO), and the like. Specific examples of the guanamine-based solvent include N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), and a compound represented by the following general formula (1). Particularly preferred are the amide-based solvents of the general formula below, specifically 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide Better.

[化1][Chemical 1]

(式中,R1 係碳數1~6的直鏈狀或分枝狀的烷基,R2 及R3 係分別獨立的、碳數1~3的直鏈狀或分枝狀的烷基。)(wherein R 1 is a linear or branched alkyl group having 1 to 6 carbon atoms; and R 2 and R 3 are each independently a linear or branched alkyl group having 1 to 3 carbon atoms; .)

上述直鏈狀烷基的具體例可舉出甲基、乙基、正丙基、正丁基、正庚基及正己基。Specific examples of the linear alkyl group include a methyl group, an ethyl group, a n-propyl group, a n-butyl group, a n-heptyl group, and a n-hexyl group.

上述分枝狀烷基的具體例可舉出異丙基、第二丁基、異丁基、第三丁基、2-甲基丁基、3-甲基丁基、異戊基、2-乙基丙基、新戊基。Specific examples of the above branched alkyl group include isopropyl group, second butyl group, isobutyl group, tert-butyl group, 2-methylbutyl group, 3-methylbutyl group, isopentyl group, and 2- Ethylpropyl, neopentyl.

前述醚醇系溶劑的具體例可舉出二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丙基醚、二乙二醇單丁基醚(BDG)等。Specific examples of the ether alcohol-based solvent include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether (BDG), and the like. .

酯系溶劑的具體例可舉出γ-丁酸內酯、乙酸丁酯等。Specific examples of the ester solvent include γ-butyrolactone and butyl acetate.

醇系溶劑的具體例可舉出乙二醇、丙二醇等。Specific examples of the alcohol solvent include ethylene glycol and propylene glycol.

前述極性有機溶劑(A),可單獨使用1種,或併用2種以上。前述極性有機溶劑(A)中以醯胺系溶劑為佳,另外,為使其具有兩親媒性的高溶解性,以3-甲氧基-N,N-二甲基丙醯胺及3-丁氧基-N,N-二甲基丙醯胺特佳。The polar organic solvent (A) may be used alone or in combination of two or more. In the polar organic solvent (A), a guanamine-based solvent is preferred, and in order to have high amphiphilic solubility, 3-methoxy-N,N-dimethylpropanamide and 3 are used. - Butoxy-N,N-dimethylpropionamide is particularly preferred.

有機胺化合物(B)的具體例可舉出單乙醇胺、單異丙醇胺、二乙二醇胺等一級烷醇胺、N-甲基乙醇胺、N-甲基丙醇胺、N-甲基丁醇胺、N-乙基乙醇胺、二乙醇胺等二級烷醇胺、二乙基胺等二級胺、N,N-二甲基乙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、N-丙基二乙醇胺、N-丁基二乙醇胺等三級烷醇胺、三乙基胺等三級胺等。其中於防蝕功能的觀點,可使用單乙醇胺、N-甲基乙醇胺及N,N-二甲基乙醇胺等乙醇胺系化合物為佳,尤其由可發揮更大的防蝕效果的觀點,以二級烷醇胺的N-甲基乙醇胺、三級烷醇胺的N,N-二甲基乙醇胺為佳。該等有機胺化合物(B)可單獨使用1種,或併用2種以上。Specific examples of the organic amine compound (B) include a primary alkanolamine such as monoethanolamine, monoisopropanolamine or diethylene glycolamine, N-methylethanolamine, N-methylpropanolamine, and N-methyl group. a secondary alkanolamine such as butanolamine, N-ethylethanolamine or diethanolamine, a secondary amine such as diethylamine, N,N-dimethylethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine a tertiary alkanolamine such as N-propyldiethanolamine or N-butyldiethanolamine or a tertiary amine such as triethylamine. Among them, from the viewpoint of the anti-corrosion function, an ethanolamine-based compound such as monoethanolamine, N-methylethanolamine or N,N-dimethylethanolamine can be preferably used, and in particular, a secondary alkanol can be used from the viewpoint of exhibiting a greater anticorrosive effect. N-methylethanolamine of an amine and N,N-dimethylethanolamine of a tertiary alkanolamine are preferred. These organic amine compounds (B) may be used alone or in combination of two or more.

前述防蝕劑(C)係由芳香族聚羥基化合物與糖類之組合所構成。The corrosion inhibitor (C) is composed of a combination of an aromatic polyhydroxy compound and a saccharide.

前述芳香族聚羥基化合物以下述一般式(a)表示者為佳。The above aromatic polyhydroxy compound is preferably represented by the following general formula (a).

Rm -Ar-(OH)n …(a)R m -Ar-(OH) n ...(a)

(式中,R係烷基或芳基,Ar係芳香族烴結構,m係0~4,以1~2之整數為佳,n係2~6,以2~4之整數為佳。)(In the formula, R is an alkyl group or an aryl group, and an Ar-based aromatic hydrocarbon structure, m is 0 to 4, preferably an integer of 1 to 2, and n is 2 to 6, preferably an integer of 2 to 4.)

上述一般式(a)中,R係烷基或芳基。In the above general formula (a), R is an alkyl group or an aryl group.

上述一般式(a)中以R所示的烷基,以碳數1~50者為佳,碳數1~20者更佳。該烷基可為直鏈狀、分枝狀、環狀的任一種,具體例可舉出甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、戊基、己基、環己基、庚基、辛基、十八烷基等。The alkyl group represented by R in the above general formula (a) is preferably one having a carbon number of from 1 to 50, more preferably from 1 to 20 carbon atoms. The alkyl group may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a second butyl group, and a third butyl group. Pentyl, hexyl, cyclohexyl, heptyl, octyl, octadecyl and the like.

上述一般式(a)中以R所示的芳基,以碳數6~50者為佳,碳數6~18者更佳。該芳基的具體例可舉出苯基、萘基、蒽基、芘基、基、聯苯基、三聯苯基等。The aryl group represented by R in the above general formula (a) is preferably a carbon number of 6 to 50, more preferably a carbon number of 6 to 18. Specific examples of the aryl group include a phenyl group, a naphthyl group, an anthracenyl group, and a fluorenyl group. Base, biphenyl, terphenyl, and the like.

上述一般式(a)中以Ar表示的芳香族聚羥構造,以碳數6~50者為佳,碳數6~18者更佳。芳香族聚羥構造的具體例可舉出以上述芳基的具體例所列舉基的構造。The aromatic polyhydroxy structure represented by Ar in the above general formula (a) is preferably a carbon number of 6 to 50, and more preferably a carbon number of 6 to 18. Specific examples of the aromatic polyhydroxy structure include those having a specific example of the above aryl group.

芳香族聚羥基化合物的具體例可舉出鄰苯二酚、第三丁基苯二酚、間苯二酚、對苯二酚、焦棓酚、1,2,4-苯三酚等,以使用對苯二酚為佳。該等芳香族聚羥基化合物可單獨使用1種,或併用2種以上。Specific examples of the aromatic polyhydroxy compound include catechol, tert-butylbenzenediol, resorcinol, hydroquinone, pyrogallol, and 1,2,4-benzenetriol. It is preferred to use hydroquinone. These aromatic polyhydroxy compounds may be used alone or in combination of two or more.

前述糖類的具體例可舉出木糖醇、山梨糖醇、阿糖醇、甘露糖醇、葡萄糖、半乳糖等,以木糖醇及山梨糖醇為佳。該等糖類可單獨使用1種,或併用2種以上。Specific examples of the saccharide include xylitol, sorbitol, arabitol, mannitol, glucose, and galactose, and xylitol and sorbitol are preferred. These saccharides may be used alone or in combination of two or more.

本發明中,於防蝕劑(C)中芳香族聚羥基化合物與糖類含有比例,自防蝕效果的觀點,以質量比9:1~1:9的範圍為佳,8:2~5:5的範圍更佳。In the present invention, the ratio of the aromatic polyhydroxy compound to the saccharide in the corrosion inhibitor (C) is preferably in the range of 9:1 to 1:9 by mass ratio, and 8:2 to 5:5 from the viewpoint of the anti-corrosion effect. The range is better.

本發明的防蝕性光阻剝離劑組成物並未限定其具體的組成比,若為具有可使用為剝離劑的剝離功能者即佳,相對於前述極性有機溶劑(A)、有機胺化合物(B)及防蝕劑(C)的合計量,前述極性有機溶劑(A)含有20~98質量%、前述有機胺化合物(B)含有1~79質量%及前述防蝕劑(C)含有0.001~10質量%為佳,含有(A)為50~96質量%、前述有機胺化合物(B)為3~49質量%、前述防蝕劑(C)含有0.01~5質量%更佳。另外,前述防蝕劑(C)即使含極微量亦具有防蝕效果,以含有0.001~10質量%為佳,含有0.01~5質量%更佳。The composition of the anti-corrosive photoresist stripper of the present invention is not limited to a specific composition ratio, and is preferably a peeling function which can be used as a release agent, and is relative to the polar organic solvent (A) and the organic amine compound (B). And the total amount of the corrosion inhibitor (C), the polar organic solvent (A) is contained in an amount of 20 to 98% by mass, the organic amine compound (B) is contained in an amount of 1 to 79% by mass, and the corrosion inhibitor (C) is contained in an amount of 0.001 to 10% by mass. The content of (A) is preferably 50 to 96% by mass, the organic amine compound (B) is 3 to 49% by mass, and the corrosion inhibitor (C) is preferably 0.01 to 5% by mass. Further, the corrosion inhibitor (C) has an anticorrosive effect even if it contains a very small amount, and is preferably contained in an amount of 0.001 to 10% by mass, more preferably 0.01 to 5% by mass.

本發明的防蝕性光阻剝離劑組成物,即便含有前述防蝕劑(C)為0.001~1質量%,進而含有極微量的0.01~0.5質量%亦顯示良好的防蝕性。The corrosion-resistant photoresist stripper composition of the present invention exhibits good corrosion resistance even when the corrosion inhibitor (C) is contained in an amount of 0.001 to 1% by mass, and further contains 0.01 to 0.5% by mass.

本發明的防蝕性光阻剝離劑組成物可進而含有水。一般而言,因光阻剝離劑中存在水分,而容易引起剝離功能降低及無機質基體腐蝕,但本發明的防蝕性光阻剝離劑組成物,不僅在無水的存在下,即便有水存在,亦表現優異的防蝕效果。The anti-corrosive photoresist stripper composition of the present invention may further contain water. In general, due to the presence of moisture in the photoresist release agent, the peeling function is lowered and the inorganic matrix is easily corroded. However, the anti-corrosion photoresist stripper composition of the present invention is not only in the presence of water, but also in the presence of water. Excellent corrosion resistance.

本發明的防蝕性光阻剝離劑組成物中的水份量,相對於前述極性有機溶劑(A)、有機胺化合物(B)及防蝕劑(C)的合計量為100質量份,水為100質量份以下為佳,20質量份以下更佳。另一方面,自防蝕性光阻剝離劑組成物的可燃性低、易於使用的觀點,相對於前述極性有機溶劑(A)、有機胺化合物(B)及防蝕劑(C)的合計量為100質量份,水為含有20質量份以上為佳,含20~100質量份更佳。The amount of water in the composition of the anti-corrosive photoresist stripper of the present invention is 100 parts by mass based on the total amount of the polar organic solvent (A), the organic amine compound (B) and the corrosion inhibitor (C), and the water is 100 mass. The following is preferred, and 20 parts by mass or less is more preferred. On the other hand, the total amount of the polar organic solvent (A), the organic amine compound (B), and the corrosion inhibitor (C) is 100 in terms of the low flammability and ease of use of the composition of the resistive photoresist release agent. The amount of water is preferably 20 parts by mass or more, more preferably 20 to 100 parts by mass.

使用不僅在無水的存在下,即便有水存在亦具效果的本發明的防蝕性光阻剝離劑組成物時,由於在寬的溫度範圍下可表現均勻的防蝕效果,容易進行溫度控制,自剝離性能的觀點而言具有可決定最適溫度的優點。本發明的防蝕性光阻剝離劑組成物以於30~90℃為佳、40~80℃更佳、65~80℃最佳的溫度下使用時,可更顯著地表現本發明的效果。When the anticorrosive photoresist stripper composition of the present invention is used not only in the presence of anhydrous, but also in the presence of water, since it exhibits a uniform anticorrosive effect over a wide temperature range, temperature control and self-peeling are easily performed. From the standpoint of performance, there is an advantage that the optimum temperature can be determined. When the composition of the anti-corrosive photoresist stripper of the present invention is preferably used at a temperature of 30 to 90 ° C, more preferably 40 to 80 ° C, and an optimum temperature of 65 to 80 ° C, the effects of the present invention can be more remarkably exhibited.

本發明的防蝕性光阻剝離劑組成物對各式各樣的無機質基體具有防蝕功能。無機質基體可舉出二氧化矽、聚二氧化矽、二氧化矽氧化膜、鋁、鋁合金、鈦、鈦鎢矽化物、氮化鈦、鎢等半導體配線材料或鎵-砷、鎵-磷、銦-磷等的化合物半導體,進而為LCD的玻璃基板等,特別係對鋁、鋁合金(Al-Cu)、銅、銥、鈦等金屬類、二氧化矽、聚二氧化矽等具優異的防蝕效果。The anti-corrosive photoresist stripper composition of the present invention has an anti-corrosion function for a wide variety of inorganic substrates. Examples of the inorganic substrate include cerium oxide, poly cerium oxide, cerium oxide oxide film, semiconductor wiring materials such as aluminum, aluminum alloy, titanium, titanium tungsten lanthanide, titanium nitride, tungsten, or gallium-arsenic, gallium-phosphorus, and the like. A compound semiconductor such as indium-phosphorus or the like is a glass substrate of an LCD, and is particularly excellent for metals such as aluminum, aluminum alloy (Al-Cu), copper, tantalum, and titanium, cerium oxide, and poly-cerium oxide. Anti-corrosion effect.

本發明的防蝕性光阻剝離劑組成物可使用於剝離塗佈於無機質基體上的光阻膜、或對塗佈於無機質基體上的光阻膜進行乾式蝕刻後殘存的光阻層、或者是乾式蝕刻後進行光阻灰化後殘存的光阻殘渣物等無機質基體上的光阻膜,進行該等剝離步驟時,可因應需要適宜地進行加熱或併用超音波等。另外,藉由本發明的防蝕性光阻剝離劑組成物的處理方法,一般為噴灑法,但亦可使用浸漬法等。The anti-corrosion photoresist stripper composition of the present invention can be used for peeling off a photoresist film applied on an inorganic substrate or a photoresist layer remaining after dry etching of a photoresist film coated on an inorganic substrate, or After the dry etching, the photoresist film on the inorganic substrate such as the photoresist residue remaining after the photoresist ashing is subjected to the above-described peeling step, and may be appropriately heated or used in combination with ultrasonic waves. Moreover, the method of treating the composition of the anti-corrosive photoresist stripper of the present invention is generally a spraying method, but a dipping method or the like may also be used.

實施例Example

以下以實施例及比較例更詳細地說明本發明,但本發明因該等例子而有所限定。Hereinafter, the present invention will be described in more detail by way of examples and comparative examples, but the invention is limited by these examples.

〈混合成分〉<mixed ingredients>

實施例1~17及比較例1~10中所使用的混合成分如下所示。The mixing components used in Examples 1 to 17 and Comparative Examples 1 to 10 are as follows.

極性有機溶劑(A):Polar organic solvent (A):

3-甲氧基-N,N-二甲基丙醯胺3-methoxy-N,N-dimethylpropanamide

二乙二醇單丁基醚(BDG,和光純藥工業股份有限公司製)Diethylene glycol monobutyl ether (BDG, manufactured by Wako Pure Chemical Industries, Ltd.)

有機胺化合物(B):Organic amine compound (B):

N-甲基乙醇胺(N-MeEtAm,和光純藥工業股份有限公司製)N-methylethanolamine (N-MeEtAm, manufactured by Wako Pure Chemical Industries, Ltd.)

單乙醇胺(MEA,和光純藥工業股份有限公司製)Monoethanolamine (MEA, Wako Pure Chemical Industries, Ltd.)

N,N-二甲基乙醇胺(DMAE,和光純藥工業股份有限公司製)N,N-dimethylethanolamine (DMAE, manufactured by Wako Pure Chemical Industries, Ltd.)

防蝕劑(C):Corrosion inhibitor (C):

芳香族聚羥基化合物:Aromatic polyhydroxy compounds:

對苯二酚(和光純藥工業股份有限公司製)Hydroquinone (made by Wako Pure Chemical Industries Co., Ltd.)

糖類:carbohydrate:

木糖醇(Sigma-Aldrich公司製)Xylitol (Sigma-Aldrich)

山梨糖醇(純正化學股份有限公司製)Sorbitol (produced by Pure Chemical Co., Ltd.)

實施例1Example 1

將86.5質量%的3-甲氧基-N,N-二甲基丙醯胺與12.5質量%的N-MeEtAm作為基底,添加入由0.5質量%的對苯二酚及0.5質量%的木糖醇所構成的1.0質量%的防蝕劑,調製成防蝕性光阻剝離劑組成物。混合比例示於表1。另外針對所得之防蝕性光阻剝離劑組成物,以下述順序對銅及鋁的腐蝕速度、水濃度相關性及溫度相關性進行評價。86.5 mass% of 3-methoxy-N,N-dimethylpropionamide and 12.5% by mass of N-MeEtAm were used as a substrate, and 0.5% by mass of hydroquinone and 0.5% by mass of xylose were added. 1.0% by mass of an anticorrosive agent composed of an alcohol was prepared into an anti-corrosion photoresist stripper composition. The mixing ratio is shown in Table 1. Further, the obtained corrosion-resistant photoresist stripper composition was evaluated for corrosion rate, water concentration dependency, and temperature dependency of copper and aluminum in the following order.

(腐蝕速度的評價)(Evaluation of corrosion rate)

於玻璃板上分別進行Al、Cu蒸鍍(約7000)後製作為2種試驗片。將上述所得之防蝕性光阻剝離劑組成物維持於60℃,並浸漬2種試驗片33分鐘。浸漬後,將試驗片以異丙醇充分洗淨,之後使其風乾並以4點探針法測定表面電阻,計算腐蝕速度。分別將對Cu腐蝕速度的評價結果示於表2,對Al腐蝕速度的評價結果示於表3。Al and Cu evaporation on the glass plate (about 7000) After that, it was made into two kinds of test pieces. The corrosion-resistant photoresist stripper composition obtained above was maintained at 60 ° C, and two kinds of test pieces were immersed for 33 minutes. After the immersion, the test piece was sufficiently washed with isopropyl alcohol, and then air-dried, and the surface resistance was measured by a 4-point probe method to calculate the corrosion rate. The evaluation results of the corrosion rate of Cu are shown in Table 2, and the evaluation results of the corrosion rate of Al are shown in Table 3.

(水濃度相關性的評價)(Evaluation of water concentration correlation)

相對於100質量份的防蝕性光阻剝離劑組成物,添加1~99質量份的水,以與上述相同方法進行腐蝕速度的評價。分別將對Cu腐蝕速度的評價結果示於表2,對Al腐蝕速度的評價結果示於表3。To 100 parts by mass of the anti-corrosive photoresist release agent composition, 1 to 99 parts by mass of water was added, and the corrosion rate was evaluated in the same manner as above. The evaluation results of the corrosion rate of Cu are shown in Table 2, and the evaluation results of the corrosion rate of Al are shown in Table 3.

(溫度相關性的評價)(Evaluation of temperature correlation)

針對處理溫度40℃及80℃,分別以與上述相同方法進行腐蝕速度的評價。各溫度的腐蝕速度的評價結果示於表4。The corrosion rate was evaluated in the same manner as above for the treatment temperatures of 40 ° C and 80 ° C, respectively. The evaluation results of the corrosion rates at the respective temperatures are shown in Table 4.

實施例2Example 2

除以表1表示的組成比之外,以與實施例1相同方法調製光阻剝離劑組成物,並評價其腐蝕速度及水濃度相關性。分別將對Cu腐蝕速度的評價結果示於表2,對Al腐蝕速度的評價結果示於表3。The photoresist stripper composition was prepared in the same manner as in Example 1 except for the composition ratio shown in Table 1, and the corrosion rate and water concentration correlation were evaluated. The evaluation results of the corrosion rate of Cu are shown in Table 2, and the evaluation results of the corrosion rate of Al are shown in Table 3.

比較例1及2Comparative Examples 1 and 2

除以表1表示的混合比例之外,以與實施例1相同方法調製光阻剝離劑組成物,並評價其腐蝕速度及水濃度相關性。分別將對Cu腐蝕速度的評價結果示於表2,對Al腐蝕速度的評價結果示於表3。The photoresist stripper composition was prepared in the same manner as in Example 1 except for the mixing ratio shown in Table 1, and the corrosion rate and water concentration correlation were evaluated. The evaluation results of the corrosion rate of Cu are shown in Table 2, and the evaluation results of the corrosion rate of Al are shown in Table 3.

比較例3Comparative example 3

除以表1表示的混合比例之外,以與實施例1相同方法調製光阻剝離劑組成物,並評價其腐蝕速度及水濃度相關性及溫度相關性。分別將對Cu腐蝕速度的評價結果示於表2,對Al腐蝕速度的評價結果示於表3,溫度相關性的評價結果示於表4。The photoresist stripper composition was prepared in the same manner as in Example 1 except for the mixing ratio shown in Table 1, and the corrosion rate, water concentration correlation, and temperature dependency were evaluated. The evaluation results of the Cu corrosion rate are shown in Table 2, the evaluation results of the Al corrosion rate are shown in Table 3, and the temperature correlation evaluation results are shown in Table 4.

與含有對苯二酚及糖類的實施例1及2相比,不含該等化合物的比較例1、僅含木糖醇的比較例2、僅含對苯二酚的比較例3對銅的腐蝕速度特別快,可得知實施例1及2所得之防蝕性光阻剝離劑組成物,對銅及鋁任一種均具有優異的防蝕性。Compared with Examples 1 and 2 containing hydroquinone and saccharides, Comparative Example 1 containing no such compounds, Comparative Example 2 containing only xylitol, Comparative Example 3 containing only hydroquinone, and copper The corrosion rate was extremely fast, and the corrosion-resistant photoresist stripper compositions obtained in Examples 1 and 2 were found to have excellent corrosion resistance to both copper and aluminum.

另外,實施例1及2中即便於防蝕性光阻剝離劑組成物中添加水,相對於其於廣幅的水濃度範圍下仍可表現優異的防蝕性,在比較例1~3中,隨著水濃度的增加,特別是對銅的腐蝕速度顯著地變快。Further, in Examples 1 and 2, even if water was added to the composition of the anti-corrosion photoresist stripper, it exhibited excellent corrosion resistance with respect to a wide range of water concentration, and in Comparative Examples 1 to 3, The increase in water concentration, especially the corrosion rate of copper, is significantly faster.

進而實施例1所得之防蝕性光阻剝離劑組成物,相對於在40~80℃廣幅的溫度範圍下仍可表現的防蝕性,比較例3、4及7所得之防蝕性光阻剝離劑組成物,會因溫度而特別對銅的腐蝕速度變快。Further, the corrosion-resistant photoresist stripper composition obtained in Example 1 was obtained by the corrosion-resistant photoresist stripper obtained in Comparative Examples 3, 4 and 7 with respect to the corrosion resistance which was exhibited at a wide temperature range of 40 to 80 ° C. The composition will have a particularly high corrosion rate of copper due to temperature.

實施例3及4Examples 3 and 4

除以表5表示的混合比例之外,以與實施例1相同方法調製防蝕性光阻剝離劑組成物,並評價該等的腐蝕速度。評價結果示於表5。The corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1 except for the mixing ratio shown in Table 5, and the corrosion rates were evaluated. The evaluation results are shown in Table 5.

以實施例3及4為基礎,藉由使用不同的胺,藉由併用防蝕劑之防蝕效果是否不同的檢討。分別於實施例3在3-甲氧基-N,N-二甲基丙醯胺中混合單乙醇胺,在實施例4中混合三級烷醇胺的DMAE,得表5所示腐蝕速度的評價結果。由該結果可得知,於併用該二防蝕劑時效果,混合二級胺或三級胺系者,較混合一級胺時,更能發揮較大的效果。Based on Examples 3 and 4, by using different amines, the corrosion protection effect of the corrosion inhibitor was used in combination. The DMAE of the tertiary alkanolamine was mixed in Example 4 with 3-methoxy-N,N-dimethylpropionamide in Example 3, and the corrosion rate shown in Table 5 was evaluated. result. From the results, it can be seen that when the two anticorrosive agents are used in combination, it is more effective to mix the secondary amine or the tertiary amine compound than when the primary amine is mixed.

實施例5~13Examples 5 to 13

除以表6及7表示的混合比例之外,以與實施例1相同方法調製防蝕性光阻剝離劑組成物。相對於100質量份的所得的防蝕性光阻剝離劑組成物,添加40質量份的水,並評價其腐蝕速度。評價結果示於表6及7。The corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1 except that the mixing ratios shown in Tables 6 and 7 were used. 40 parts by mass of water was added to 100 parts by mass of the obtained corrosion-resistant photoresist release agent composition, and the corrosion rate was evaluated. The evaluation results are shown in Tables 6 and 7.

實施例14Example 14

除以表8表示的混合比例之外,以與實施例1相同方法調製防蝕性光阻剝離劑組成物。相對於100質量份的所得的防蝕性光阻剝離劑組成物,添加10質量份的水,並評價其腐蝕速度。評價結果示於表8。The corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1 except that the mixing ratios shown in Table 8 were used. 10 parts by mass of water was added to 100 parts by mass of the obtained corrosion-resistant photoresist release agent composition, and the corrosion rate was evaluated. The evaluation results are shown in Table 8.

比較例4Comparative example 4

除以表8表示的混合比例之外,以與實施例14相同方法調製光阻剝離劑組成物,並評價其腐蝕速度及溫度相關性。腐蝕速度的評價結果示於表8,溫度相關性的評價結果示於表4。The photoresist stripper composition was prepared in the same manner as in Example 14 except for the mixing ratio shown in Table 8, and the corrosion rate and temperature dependency thereof were evaluated. The evaluation results of the corrosion rate are shown in Table 8, and the evaluation results of the temperature dependence are shown in Table 4.

比較例5及6Comparative Examples 5 and 6

除以表8表示的混合比例之外,以與實施例14相同方法調製光阻剝離劑組成物,並評價其腐蝕速度。評價結果示於表8。The photoresist stripper composition was prepared in the same manner as in Example 14 except for the mixing ratio shown in Table 8, and the etching rate was evaluated. The evaluation results are shown in Table 8.

實施例15Example 15

除以表9表示的混合比例之外,以與實施例1相同方法調製防蝕性光阻剝離劑組成物。評價所得的防蝕性光阻剝離劑組成物的腐蝕速度。評價結果示於表9。The corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1 except that the mixing ratios shown in Table 9 were used. The corrosion rate of the obtained anti-corrosion photoresist stripper composition was evaluated. The evaluation results are shown in Table 9.

比較例7Comparative Example 7

除以表9表示的混合比例之外,以與實施例15相同方法調製光阻剝離劑組成物,並評價其腐蝕速度及溫度相關性。腐蝕速度的評價結果示於表9,溫度相關性的評價結果示於表4。The photoresist stripper composition was prepared in the same manner as in Example 15 except for the mixing ratio shown in Table 9, and the corrosion rate and temperature dependency were evaluated. The evaluation results of the corrosion rate are shown in Table 9, and the evaluation results of the temperature dependence are shown in Table 4.

比較例8及9Comparative Examples 8 and 9

除以表9表示的混合比例之外,以與實施例15相同方法調製光阻剝離劑組成物,評價腐蝕速度。評價結果示於表9。The photoresist stripper composition was prepared in the same manner as in Example 15 except for the mixing ratio shown in Table 9, and the corrosion rate was evaluated. The evaluation results are shown in Table 9.

實施例16Example 16

使用山梨糖醇取代木糖醇,除以表10表示的混合比例之外,以與實施例1相同方法調製防蝕性光阻剝離劑組成物,評價腐蝕速度。評價結果示於表10。另外對防蝕性光阻剝離劑組成物的剝離性能以下述順序進行評價。The corrosion-resistant photoresist stripper composition was prepared in the same manner as in Example 1 except that the xylitol was replaced with sorbitol, and the corrosion rate was evaluated in the same manner as in Example 1. The evaluation results are shown in Table 10. Further, the peeling performance of the corrosion-resistant photoresist stripper composition was evaluated in the following order.

(剝離性能的評價)(evaluation of peeling performance)

於充分洗淨的玻璃基板上,將正型光阻組成物(富士FILM Electronic Materials股份有限公司製,HPR204,8cps),以旋轉塗佈機(750rpm×20s)進行塗佈,並於烤箱中以下述條件進行燒成。A positive-type photoresist composition (HPR204, 8 cps manufactured by Fuji FILM Electronic Materials Co., Ltd.) was applied onto a sufficiently cleaned glass substrate, and coated by a spin coater (750 rpm × 20 s) in the oven. The conditions are described as firing.

燒成條件:80℃×15分鐘+130℃×15分鐘+160℃×15分鐘Firing conditions: 80 ° C × 15 minutes + 130 ° C × 15 minutes + 160 ° C × 15 minutes

將該玻璃基板切割為5×5mm大小後得試驗片。The glass substrate was cut into a size of 5 × 5 mm to obtain a test piece.

於燒杯中置入約10毫升的防蝕性光阻剝離劑組成物,以油浴維持70℃恆溫。將試驗片浸漬於其中,2分鐘後取出後立即以純水充分潤洗之後,以風乾方式使其乾燥。Approximately 10 ml of the anti-corrosive photoresist stripper composition was placed in the beaker and maintained at a constant temperature of 70 ° C in an oil bath. The test piece was immersed therein, and after 2 minutes, it was sufficiently rinsed with pure water immediately after taking out, and then dried by air drying.

以掃描型電子顯微鏡(SEM)觀察試驗片後,確認光阻完全被去除。After observing the test piece by a scanning electron microscope (SEM), it was confirmed that the photoresist was completely removed.

比較例10Comparative Example 10

除以表10表示的混合比例之外,以與實施例16相同方法調製光阻剝離劑組成物,並評價其腐蝕速度。結果示於表10。The photoresist stripper composition was prepared in the same manner as in Example 16 except for the mixing ratio shown in Table 10, and the corrosion rate was evaluated. The results are shown in Table 10.

根據實施例1、5~13及16以及比較例10,確認經由以芳香族聚羥基化合物與糖類併用配方後的本發明之防蝕性光阻剝離劑組成物,即使整體的防蝕劑濃度為低濃度,亦可發揮充分的防蝕效果。反之,單獨將山梨糖醇以低濃度添加(比較例10)時,雖可確認對鋁的防蝕效果,但卻大大地進行對銅的腐蝕。According to the examples 1, 5 to 13 and 16 and the comparative example 10, it was confirmed that the composition of the anticorrosive photoresist stripper of the present invention after the formulation of the aromatic polyhydroxy compound and the saccharide was used together, even if the overall corrosion inhibitor concentration was low. It can also exert sufficient anti-corrosion effect. On the other hand, when sorbitol was added at a low concentration alone (Comparative Example 10), the corrosion resistance to aluminum was confirmed, but corrosion of copper was greatly performed.

如上所述,確認了本發明之防蝕性光阻剝離劑組成物無溫度相關性,且於寬廣的溫度下顯示高防蝕性,另外於寬廣的水濃度下亦顯示防蝕效果。As described above, it was confirmed that the anti-corrosive photoresist stripper composition of the present invention has no temperature dependency and exhibits high corrosion resistance at a wide temperature, and also exhibits an anti-corrosion effect at a wide water concentration.

另外根據圖1、2,可得知將對苯二酚與木糖醇或山梨糖醇併用時,較以木糖醇及對苯二酚單獨配方的光阻剝離劑於水添加量的全部範圍內,對銅及鋁任一種均具有高防蝕性。進而根據圖3、4可確認本發明之防蝕性光阻剝離劑組成物,溫度相關性較其他的防蝕配方為低,且於各種溫度下均可充分地發揮對銅及鋁任一種的防蝕效果。Further, according to Figs. 1 and 2, it can be seen that when hydroquinone is used in combination with xylitol or sorbitol, the total amount of the photoresist stripping agent which is separately formulated with xylitol and hydroquinone is added to the water. It has high corrosion resistance to both copper and aluminum. Furthermore, it can be confirmed from FIGS. 3 and 4 that the anti-corrosion photoresist stripper composition of the present invention has a lower temperature dependency than other anti-corrosion formulations, and can sufficiently exert an anti-corrosion effect on any of copper and aluminum at various temperatures. .

產業上的可利用性Industrial availability

如以上的詳細說明,本發明之防蝕性光阻剝離劑組成物,對銅及鋁任一種均顯示優異的防蝕效果,另外由於水濃度相關性及溫度相關性低,可適用為塗佈於無機基體上的光阻的剝離劑等。As described in detail above, the anti-corrosive photoresist stripper composition of the present invention exhibits an excellent anti-corrosion effect for both copper and aluminum, and is applicable to application to inorganics due to low water concentration correlation and temperature dependency. A stripper or the like for the photoresist on the substrate.

[圖1]表示於實施例1、2與比較例1~3中調製的(防蝕性)光阻剝離劑組成物,與各水添加量及銅腐蝕速度的相關圖(表2)。Fig. 1 is a graph showing the correlation between the amount of each of the water-added amount and the copper corrosion rate (Table 2) of the (corrosion-resistant) photoresist stripper composition prepared in Examples 1 and 2 and Comparative Examples 1 to 3.

[圖2]表示於實施例1、2與比較例1~3中調製的(防蝕性)光阻剝離劑組成物,與各水添加量及鋁腐蝕速度的相關圖(表3)。Fig. 2 is a graph showing the correlation between the (anti-corrosion) photoresist stripper composition prepared in Examples 1 and 2 and Comparative Examples 1 to 3, the amount of each water added, and the aluminum corrosion rate (Table 3).

[圖3]表示於實施例1與比較例3、4及7中調製的(防蝕性)光阻剝離劑組成物,於各溫度下Cu腐蝕速度圖(表4)。Fig. 3 is a graph showing the Cu corrosion rate at each temperature of the (corrosion resistant) photoresist stripper composition prepared in Example 1 and Comparative Examples 3, 4 and 7. (Table 4).

[圖4]表示於實施例1與比較例3、4及7中調製的(防蝕性)光阻剝離劑組成物,於各溫度下Al腐蝕速度圖(表4)。Fig. 4 is a graph showing the Al corrosion rate at each temperature of the (corrosion resistant) photoresist stripper composition prepared in Example 1 and Comparative Examples 3, 4 and 7. (Table 4).

Claims (4)

一種防蝕性光阻剝離劑組成物,其係含有極性有機溶劑(A)、有機胺化合物(B)及由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C)的防蝕性光阻剝離劑組成物,其特徵係該極性有機溶劑(A)為選自醯胺系溶劑、二甲基亞碸(DMSO)、二乙二醇單丁基醚(BDG)所選出之一種以上,該有機胺化合物(B)為選自單乙醇胺、N-甲基乙醇胺及N,N-二甲基乙醇胺之1種以上,該防蝕劑(C)之一方之芳香族聚羥基化合物為以下述一般式(a)表示者,另一方的糖類為選自木糖醇、山梨糖醇、阿糖醇、甘露糖醇、葡萄糖及半乳糖之1種以上,且相對於前述極性有機溶劑(A)、有機胺化合物(B)及防蝕劑(C)之合計量,前述極性有機溶劑(A)之含量為20~98質量%、前述有機胺化合物(B)之含量為1~79質量%及前述防蝕劑(C)之含量為0.001~1質量%,Rm -Ar-(OH)n …(a)(式中,R係烷基或芳基,Ar係芳香族烴結構,m係0~4之整數,n係2~6之整數)。An anti-corrosion photoresist stripper composition comprising a polar organic solvent (A), an organic amine compound (B), and an anti-corrosion resist of an anticorrosive agent (C) composed of a combination of an aromatic polyhydroxy compound and a saccharide a stripper composition characterized in that the polar organic solvent (A) is one or more selected from the group consisting of a guanamine solvent, dimethyl hydrazine (DMSO), and diethylene glycol monobutyl ether (BDG). The organic amine compound (B) is one or more selected from the group consisting of monoethanolamine, N-methylethanolamine, and N,N-dimethylethanolamine, and the aromatic polyhydroxy compound of one of the corrosion inhibitors (C) is in the following general formula. (a) indicates that the other sugar is one or more selected from the group consisting of xylitol, sorbitol, arabitol, mannitol, glucose, and galactose, and is organic with respect to the aforementioned polar organic solvent (A). The total amount of the amine compound (B) and the corrosion inhibitor (C), the content of the polar organic solvent (A) is 20 to 98% by mass, the content of the organic amine compound (B) is 1 to 79% by mass, and the aforementioned corrosion inhibitor The content of (C) is 0.001 to 1% by mass, and R m -Ar-(OH) n (a) (wherein R is an alkyl group or an aryl group, an Ar-based aromatic hydrocarbon structure, m system An integer from 0 to 4, n is an integer from 2 to 6.) 如申請專利範圍第1項之防蝕性光阻剝離劑組成物,其係含有極性有機溶劑(A)、有機胺化合物(B)、由芳香族聚羥基化合物與糖類之組合所構成的防蝕劑(C)及水。 An anti-corrosion photoresist stripper composition according to the first aspect of the patent application, which comprises a polar organic solvent (A), an organic amine compound (B), and an anticorrosive agent composed of a combination of an aromatic polyhydroxy compound and a saccharide ( C) and water. 如申請專利範圍第1項之防蝕性光阻剝離劑組成物,其係僅由極性有機溶劑(A)、有機胺化合物(B)、由芳香族聚羥基化合物與糖類之組合所構成之防蝕劑(C)及水所構成。 An anti-corrosion photoresist stripper composition according to the first aspect of the patent application, which is an anticorrosive agent composed only of a polar organic solvent (A), an organic amine compound (B), and a combination of an aromatic polyhydroxy compound and a saccharide. (C) and water. 如申請專利範圍第1項之防蝕性光阻剝離劑組成物,其中前述防蝕劑(C)為以質量比9:1~1:9的比例含有芳香族聚羥基化合物與糖類。 The anti-corrosion photoresist stripper composition according to claim 1, wherein the anti-corrosion agent (C) contains an aromatic polyhydroxy compound and a saccharide in a ratio of a mass ratio of 9:1 to 1:9.
TW98137945A 2008-11-28 2009-11-09 Anti - corrosive photoresist release agent composition TWI470380B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008305176 2008-11-28

Publications (2)

Publication Number Publication Date
TW201035702A TW201035702A (en) 2010-10-01
TWI470380B true TWI470380B (en) 2015-01-21

Family

ID=42225581

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98137945A TWI470380B (en) 2008-11-28 2009-11-09 Anti - corrosive photoresist release agent composition

Country Status (5)

Country Link
JP (1) JP5302334B2 (en)
KR (1) KR20110096126A (en)
CN (1) CN102301282B (en)
TW (1) TWI470380B (en)
WO (1) WO2010061701A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101089211B1 (en) * 2010-12-02 2011-12-02 엘티씨 (주) Composition of stripping solution for liquid crystal display process photoresist comprising primary alkanolamine
JP5575318B1 (en) * 2013-09-02 2014-08-20 パナソニック株式会社 Resist stripper
KR20150146285A (en) * 2014-06-23 2015-12-31 동우 화인켐 주식회사 Resist stripper composition and method of stripping resist using the same
WO2018088511A1 (en) * 2016-11-11 2018-05-17 株式会社カネコ化学 Remover for cured products of curable resins, swelling agent for cured products of curable resins, and volume reducing agent for cured foams of curable resins
CN110192152B (en) * 2017-01-13 2023-11-03 日产化学株式会社 Composition for forming resist underlayer film containing amide solvent
CN111638632B (en) * 2020-06-24 2022-08-05 福建省佑达环保材料有限公司 Photoresist reworking liquid composition for CF procedure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222118A (en) * 1999-12-01 2001-08-17 Tokyo Ohka Kogyo Co Ltd Rinsing solution for photolithography and method for treating substrate with same
TW508478B (en) * 2000-04-26 2002-11-01 Dongjin Semichem Co Ltd Resist stripper composition
JP2003015320A (en) * 2001-06-29 2003-01-17 Mitsubishi Gas Chem Co Inc Resist remover composition
JP2005077526A (en) * 2003-08-28 2005-03-24 Sony Corp Photoresist stripping liquid composition for substrate containing silver and/or silver alloy, method for manufacturing pattern using the same, and display apparatus containing the substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100964801B1 (en) * 2003-06-26 2010-06-22 동우 화인켐 주식회사 Photoresist stripper composition, and exfoliation method of a photoresist using it

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222118A (en) * 1999-12-01 2001-08-17 Tokyo Ohka Kogyo Co Ltd Rinsing solution for photolithography and method for treating substrate with same
TW508478B (en) * 2000-04-26 2002-11-01 Dongjin Semichem Co Ltd Resist stripper composition
JP2003015320A (en) * 2001-06-29 2003-01-17 Mitsubishi Gas Chem Co Inc Resist remover composition
JP2005077526A (en) * 2003-08-28 2005-03-24 Sony Corp Photoresist stripping liquid composition for substrate containing silver and/or silver alloy, method for manufacturing pattern using the same, and display apparatus containing the substrate

Also Published As

Publication number Publication date
JP5302334B2 (en) 2013-10-02
CN102301282A (en) 2011-12-28
JPWO2010061701A1 (en) 2012-04-26
CN102301282B (en) 2014-03-05
KR20110096126A (en) 2011-08-29
WO2010061701A1 (en) 2010-06-03
TW201035702A (en) 2010-10-01

Similar Documents

Publication Publication Date Title
TW552481B (en) Non-corrosive stripping and cleaning composition
JP4814356B2 (en) Compositions for peeling and cleaning and their use
KR100857865B1 (en) Cleaning formulat1ons
JP4750807B2 (en) Cleaning agent for semiconductor substrate
WO2015056428A1 (en) Resist-stripping liquid
TWI470380B (en) Anti - corrosive photoresist release agent composition
CN114940926A (en) Cleaning preparation
JP2013008042A (en) Improvement of metal protection using peeling solution containing resorcinol
KR101691850B1 (en) A composition for striping of photoresist
JP3255551B2 (en) Stripper composition for resist
TW439013B (en) Photoresist stripping composition
TWI417683B (en) Stabilized, non-aqueous cleaning compositions for microelectronics substrates
KR20160108109A (en) Resist stripper composition
KR101399502B1 (en) Remover composition for removing Thermosetting resin of TFT-LCD
KR100544889B1 (en) Photoresist stripper composition
JP2008519310A (en) Post-etch cleaning composition for use on aluminum-containing substrates
CN105824201B (en) Resist remover compositions
CN102103334B (en) Resist remover composition
KR101341701B1 (en) Resist stripper composition and a method of stripping resist using the same
KR101721262B1 (en) Resist stripper composition and a method of stripping resist using the same
KR102572751B1 (en) Resist stripper composition and method of stripping resist using the same
KR101341746B1 (en) Resist stripper composition and a method of stripping resist using the same
TWI516879B (en) Resist stripper composition for forming copper-based wiring, method of manufacturing a semiconductor device and a flat panel display using the same
JP4415228B2 (en) Composition for resist stripping solution
KR20170002933A (en) Stripper composition

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees