201035702 六、發明說明： 【發明所屬之技術領域】 本發明係有關防蝕性光阻剝離劑組成 含有特定的防蝕劑，提供具優異防蝕效果 離劑組成物。 【先前技術】 〇 至今已開發了以簡單地剝除塗佈於無 阻爲目的的各式各樣的剝離劑。 針對該等剝離劑，由製造高精度的電 言，要求於進行剝離時，不腐蝕使用爲金 或無機質基體而可剝離光阻。爲滿足該等 加安息香酸及酢酸等的羧酸、螯合化合物 糖類、兒茶酚等的聚羥基芳香族作爲防蝕 液晶顯示器多採用鋁配線，但近年來 Ο 的大型化，自成本面及電視薄型化觀點， 電阻更小的銅配線。因此期望不僅是鋁， 優異防蝕效果的光阻剝離劑。然而目前尙 鋁二者可發揮充分防蝕效果的防蝕配方所 專利文件1中記載有各式各樣的防蝕 羥基化合物亦可與糖類倂用之記載，但該 具體的實施例。具體防蝕配方僅見使用 2,3-DHN)與苯甲酸以及鄰苯二甲酸或磷 )的記載。另外雖確認對鋁的防蝕效果’ 物，特別係藉由 的防蝕性光阻剝 機質基體上的光 路配線之觀點而 屬配線的鋁、銅 要求，正檢討添 、山梨糖醇等的 劑之方法。 伴隨液晶顯示器 正檢討採用較鋁 對銅亦同樣具有 未得知以對銅及 調配的剝離劑。 劑，亦有芳香族 防蝕劑配方並無 2,3-二羥基萘（ 酸（螯合化合物 但並未確認對銅 -5- 201035702 的防蝕效果。 專利文件2中記載使用作爲防腐蝕劑的糖（直鏈多元 醇）及芳香族羥基化合物，但芳香族羥基化合物與糖倂用 所構成的剝離液組成物，並未具體揭示於實施例等之中。 專利文件3中雖揭示含糖類的剝離液組成物，但針對 使用芳香族羥基化合物，並無任何記載。 進而專利文件7係有關含有極性有機溶媒及有機經基 化胺化合物等非水性的洗淨組成物，雖有有關以2個以上 的羥基與糖類及芳香環直接鍵結的芳基化合物等的記載， 但於實施例等之中，並未有針對芳香族羥基化合物與糖倂 用所構成的剝離劑組成物的具體揭示。 專利文件1 :特開2005-70230號公報 專利文件2:特開2005-43874號公報 專利文件3:特開2000-241991號公報 專利文件4 :特開平9 - 3 1 9 0 9 8號公報 專利文件5:特開2007-514983號公報 ◎ 專利文件6:特開平8-262746號公報 專利文件7 :特表2007-514983號公報 【發明內容】 [發明欲解決的課題] 本發明爲解決前述課題，以提供對銅及鋁任一種，皆 可於廣幅的溫度範圍或於水的存在與不存在的任一狀況下 ’表現優異防蝕效果的防蝕性光阻剝離劑組成物爲目的。 -6- 201035702 [解決課題的方法] 本發明團隊爲達成前述目的進行專心硏究後，發現藉 由採用使用了作爲防蝕劑的芳香族聚羥基化合物與糖類之 組合的防蝕性光阻剝離劑組成物，可解決前述課題，並完 成本發明。 亦即本發明係提供， 〇 1. 一種防蝕性光阻剝離劑組成物，其係含有極性有機 溶劑（A )、有機胺化合物（B )、及由芳香族聚羥基化 合物與糖類之組合所構成的防蝕劑（C )， 2.如前述1之防蝕性光阻剝離劑組成物，其係含有極 性有機溶劑（A )、有機胺化合物（B )、由芳香族聚羥 基化合物與糖類之組合所構成的防蝕劑（C )及水， 3 .如前述1或2之防蝕性光阻剝離劑組成物，其係僅 由極性有機溶劑（A )、有機胺化合物（B )、由芳香族 〇 聚羥基化合物與糖類之組合所構成的防蝕劑（c)及水所 構成， 4.如前述1〜3中任一項防蝕性光阻剝離劑組成物， 其中前述極性有機溶劑（A )爲醯胺系溶劑， 5 .如前述1〜4任一項之防蝕性光阻剝離劑組成物， 其中前述有機胺化合物（B)爲選自單乙醇胺、N-甲基乙 醇胺及Ν,Ν-二甲基乙醇胺之1種以上之有機胺化合物， 6 .如前述1〜5之防蝕性光阻剝離劑組成物，其中前 述芳香族聚徑基化合物爲以下述一般式（a)表示， 201035702201035702 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a composition of an anti-corrosive photoresist stripper which contains a specific anticorrosive agent and provides an excellent anti-corrosion effect agent composition. [Prior Art] A variety of release agents have been developed so far for the purpose of simply peeling off and applying them to the unresistance. For such a release agent, it is required to produce a high-precision electronic article, and it is required to peel off the photoresist when it is used as a gold or an inorganic substrate without being corroded. In order to satisfy the polyhydroxyaromatics such as carboxylic acid, chelating compound saccharide, and catechol, such as benzoic acid and citric acid, aluminum wiring is often used as an anti-corrosion liquid crystal display, but in recent years, the size of the enamel has increased, and since the cost and the television Thinner view, copper wiring with smaller resistance. Therefore, a photoresist stripper which is not only aluminum but also has an excellent anti-corrosion effect is desired. However, in the prior art, the anti-corrosion formula which exhibits sufficient anti-corrosion effect is described in Patent Document 1, and various types of anti-corrosion hydroxy compounds can be described as being used with saccharides, but this specific embodiment is described. Specific corrosion protection formulations are only described using 2,3-DHN) with benzoic acid and phthalic acid or phosphorus. In addition, it is confirmed that the anti-corrosion effect of aluminum is required for the aluminum and copper of the wiring from the viewpoint of the optical path wiring on the anti-corrosive photo-resisting substrate. method. Accompanying liquid crystal displays are being reviewed for the use of aluminum. Copper is also known to have a stripping agent for copper and blending. There is also an aromatic corrosion inhibitor formulation without 2,3-dihydroxynaphthalene (acid (chelating compound but not confirmed to copper-5-201035702). Patent Document 2 describes the use of sugar as a corrosion inhibitor (straight The chain polyol (polyol) and the aromatic hydroxy compound are not specifically disclosed in the examples and the like, and the composition of the peeling liquid composed of the aromatic hydroxy compound and the glycoside is disclosed in Patent Document 3. However, there is no description about the use of an aromatic hydroxy compound. Further, Patent Document 7 relates to a non-aqueous cleaning composition containing a polar organic solvent and an organic warfare amine compound, and has two or more hydroxyl groups. There is no description of the aryl compound directly bonded to the saccharide or the aromatic ring, but in the examples and the like, there is no specific disclosure of the release agent composition for the aromatic hydroxy compound and the glycoside. Patent Document 1 JP-A-2005-70230, Patent Document 2: JP-A-2005-43874, Patent Document 3: JP-A-2000-241991, Patent Document 4: Japanese Patent Publication No. 9 - 3 1 9 0 9 8 Patent Document 5: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2007-514. The subject is intended to provide a corrosion-resistant photoresist stripper composition that exhibits excellent corrosion resistance in a wide temperature range or in the presence or absence of water in any of a wide range of temperatures. 6-201035702 [Method for Solving the Problem] After focusing on the above-mentioned objects, the inventors of the present invention found that an anti-corrosive photoresist stripper composition using a combination of an aromatic polyhydroxy compound and a saccharide using an anticorrosive agent was used. The present invention can be solved by the above problems. That is, the present invention provides, 〇1. An anti-corrosive photoresist stripper composition comprising a polar organic solvent (A), an organic amine compound (B), and An anticorrosive agent (C) comprising a combination of an aromatic polyhydroxy compound and a saccharide; 2. The anticorrosive photoresist stripper composition according to the above 1, which comprises a polar organic solvent (A), an organic amine a compound (B), an anticorrosive agent (C) composed of an aromatic polyhydroxy compound and a saccharide, and water, 3. The anticorrosive photoresist stripper composition according to the above 1 or 2, which is only a polar organic solvent (A), an organic amine compound (B), an anticorrosive agent (c) composed of a combination of an aromatic hydrazine polyhydroxy compound and a saccharide, and water. 4. The corrosion resistance of any one of the above 1 to 3 And a composition of the above-mentioned organic amine compound (B), wherein the organic amine compound (B) is selected from the group consisting of the above-mentioned organic amine compound (B), wherein the organic amine compound (B) is selected from the group consisting of the above-mentioned organic amine compound (B). An organic amine compound of one or more of monoethanolamine, N-methylethanolamine and hydrazine, hydrazine-dimethylethanolamine, and an anti-corrosion photoresist stripper composition according to the above 1 to 5, wherein the aromatic polydiamatic group The compound is represented by the following general formula (a), 201035702
Rm-Ar- ( 〇H )，__ ( a ) (式中’ R係烷基或芳基，Ar係芳香族烴結構，m係0〜 4之整數，η係2〜6之整數）， 7.如前述1〜+6任一項之防蝕性光阻剝離劑組成物， 其中前述糖類爲選自木糖醇、山梨糖醇、阿糖醇、甘露糖 醇、葡萄糖及半乳糖之1種以上之糖類， 8 .如前述1〜7任一項之防蝕性光阻剝離劑組成物， 其中前述防蝕劑（C )爲以質量比9 : 1〜1 : 9的比例含有 芳香族聚羥基化合物與糖類，及 9 .如前述1〜8任一項之防蝕性光阻剝離組成物，其 中前述極性有機溶劑（Α)含有19〜95質量％、前述有機 胺化合物（Β )含有4〜80質量％及前述防蝕劑（C )含有 0-001〜10質量％。 [發明的效果] 根據本發明，對銅及鋁任一種，皆可於廣幅的溫度範 圍或於水的存在與不存在的任一狀況下，提供表現優異防 蝕效果的防蝕性光阻剝離劑組成物。 [實施發明最優良的方式] 本發明之防蝕性光阻剝離劑組成物’係含有極性有機 溶劑（A )、有機胺化合物（B )、及由芳香族聚經基化 -8 - 201035702 合物與糖類之組合所構成的防蝕劑（C )。 前述的極性有機溶劑（A )，若爲可均勻溶解有機胺 化合物及芳香族聚羥基化合物與糖類則無特限定，可舉出 醯胺系溶劑、醚醇系溶劑、醇系溶劑、酯系溶劑、二甲基 亞颯（DMSO )等。醯胺系溶劑的具體例可舉出N-甲基· 2_咯烷酮（NMP )、二甲基甲醯胺（DMF )、以下述一般 式（1)表示的化合物等。特別以下述一般式的醯胺系溶 0 劑爲佳，具體而言以3-甲氧基-N，N-二甲基丙醯胺、3-丁 氧基-N，N-二甲基丙醯胺更佳。 [化1]Rm-Ar-( 〇H ), __ ( a ) (wherein R is an alkyl group or an aryl group, an Ar-based aromatic hydrocarbon structure, m is an integer of 0 to 4, and an integer of η is 2 to 6), 7 The anti-corrosion photoresist stripper composition according to any one of the above 1 to 6, wherein the saccharide is one or more selected from the group consisting of xylitol, sorbitol, arabitol, mannitol, glucose, and galactose The anti-corrosion photoresist stripper composition according to any one of the above 1 to 7, wherein the anti-corrosion agent (C) contains an aromatic polyhydroxy compound in a ratio of a mass ratio of 9:1 to 1:9; The anti-corrosion photoresist stripping composition according to any one of the above 1 to 8, wherein the polar organic solvent (Α) contains 19 to 95% by mass, and the organic amine compound (Β) contains 4 to 80% by mass. And the aforementioned corrosion inhibitor (C) contains 0-001 to 10% by mass. [Effects of the Invention] According to the present invention, any of copper and aluminum can provide an anti-corrosive photoresist stripper which exhibits an excellent anti-corrosion effect in a wide temperature range or in the presence or absence of water. Composition. [The Best Mode for Carrying Out the Invention] The anticorrosive photoresist stripper composition of the present invention contains a polar organic solvent (A), an organic amine compound (B), and an aromatic poly-based polymerase-8 - 201035702 An anticorrosive agent (C) composed of a combination with a saccharide. The polar organic solvent (A) is not particularly limited as long as it can uniformly dissolve the organic amine compound and the aromatic polyhydroxy compound and the saccharide, and examples thereof include a guanamine solvent, an ether alcohol solvent, an alcohol solvent, and an ester solvent. , dimethyl hydrazine (DMSO), and the like. Specific examples of the guanamine-based solvent include N-methyl-2-broxopropanone (NMP), dimethylformamide (DMF), and a compound represented by the following general formula (1). Particularly preferred is a guanamine-based solvate of the following general formula, specifically 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropane The guanamine is better. [Chemical 1]
(1) (式中，R1係碳數1〜6的直鏈狀或分枝狀的烷基’ R2及 R3係分別獨立的、碳數1〜3的直鏈狀或分枝狀的烷基。 〇 ) 上述直鏈狀烷基的具體例可舉出甲基、乙基、正丙基 、正丁基、正庚基及正己基。 上述分枝狀烷基的具體例可舉出異丙基、第二丁基、 異丁基、第三丁基、2-甲基丁基、3-甲基丁基、異戊基、 2-乙基丙基、新戊基。 前述醚醇系溶劑的具體例可舉出二乙二醇單甲基醚、 二乙二醇單乙基醚、二乙二醇單丙基醚、二乙二醇單丁基 醚（BDG)等。 201035702 酯系溶劑的具體例可舉出γ-丁酸內酯、乙酸丁酯等。 醇系溶劑的具體例可舉出乙二醇、丙二醇等。 前述極性有機溶劑（A )，可單獨使用1種，或倂用 2種以上。前述極性有機溶劑（A )中以醯胺系溶劑爲佳 ，另外，爲使其具有兩親媒性的高溶解性，以3 -甲氧基-N，N-二甲基丙醯胺及3-丁氧基-N，N-二甲基丙醯胺特佳。 有機胺化合物（B )的具體例可舉出單乙醇胺、單異 丙醇胺、二乙二醇胺等一級烷醇胺、N-甲基乙醇胺、N-甲 基丙醇胺、N-甲基丁醇胺、N-乙基乙醇胺、二乙醇胺等二 級烷醇胺、二乙基胺等二級胺、Ν,Ν-二甲基乙醇胺、N-甲 基二乙醇胺、Ν-乙基二乙醇胺' Ν-丙基二乙醇胺、Ν-丁基 二乙醇胺等三級烷醇胺、三乙基胺等三級胺等。其中於防 蝕功能的觀點，可使用單乙醇胺、Ν-甲基乙醇胺及Ν,Ν-二甲基乙醇胺等乙醇胺系化合物爲佳，尤其由可發揮更大 的防蝕效果的觀點’以二級烷醇胺的Ν -甲基乙醇胺、三 級烷醇胺的Ν，Ν-二甲基乙醇胺爲佳。該等有機胺化合物 (Β )可單獨使用1種，或倂用2種以上。 前述防蝕劑（C )係由芳香族聚羥基化合物與糖類之 組合所構成。 前述芳香族聚羥基化合物以下述一般式（a)表示者 爲佳。(1) (wherein R1 is a linear or branched alkyl group having 1 to 6 carbon atoms; R2 and R3 are each independently a linear or branched alkyl group having 1 to 3 carbon atoms; 〇) Specific examples of the linear alkyl group include a methyl group, an ethyl group, a n-propyl group, a n-butyl group, a n-heptyl group, and a n-hexyl group. Specific examples of the above branched alkyl group include isopropyl group, second butyl group, isobutyl group, tert-butyl group, 2-methylbutyl group, 3-methylbutyl group, isopentyl group, and 2- Ethylpropyl, neopentyl. Specific examples of the ether alcohol-based solvent include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, and diethylene glycol monobutyl ether (BDG). . Specific examples of the ester solvent in 201035702 include γ-butyrolactone and butyl acetate. Specific examples of the alcohol solvent include ethylene glycol and propylene glycol. The polar organic solvent (A) may be used singly or in combination of two or more. In the polar organic solvent (A), a guanamine-based solvent is preferred, and in order to have high amphiphilic solubility, 3-methoxy-N,N-dimethylpropanamide and 3 are used. - Butoxy-N,N-dimethylpropionamide is particularly preferred. Specific examples of the organic amine compound (B) include a primary alkanolamine such as monoethanolamine, monoisopropanolamine or diethylene glycolamine, N-methylethanolamine, N-methylpropanolamine, and N-methyl group. Secondary alkanolamines such as butanolamine, N-ethylethanolamine, diethanolamine, secondary amines such as diethylamine, hydrazine, hydrazine-dimethylethanolamine, N-methyldiethanolamine, hydrazine-ethyldiethanolamine a tertiary alkanolamine such as fluorene-propyldiethanolamine or hydrazine-butyldiethanolamine or a tertiary amine such as triethylamine. Among them, from the viewpoint of the anti-corrosion function, an ethanolamine-based compound such as monoethanolamine, hydrazine-methylethanolamine or hydrazine or hydrazine-dimethylethanolamine may be preferably used, especially from the viewpoint of exhibiting a greater anticorrosive effect. The amine hydrazine-methylethanolamine, the tertiary alkanolamine hydrazine, and the hydrazine-dimethylethanolamine are preferred. These organic amine compounds (Β) may be used alone or in combination of two or more. The corrosion inhibitor (C) is composed of a combination of an aromatic polyhydroxy compound and a saccharide. The above aromatic polyhydroxy compound is preferably represented by the following general formula (a).
Rm-Ar- ( OH) n …（a) -10 - 201035702 (式中，R係烷基或芳基，Ar係芳香族烴結構，m係〇〜 4’以1〜2之整數爲佳，η係2〜6’以2〜4之整數爲佳 ° ) 上述一般式（a)中’ R係院基或芳基。 上述一般式（a)中以R所示的烷基’以碳數1〜50 者爲佳，碳數1〜20者更佳。該烷基可爲直鏈狀、分枝狀 、環狀的任一種，具體例可舉出甲基、乙基、丙基、異丙 0 基、丁基、第二丁基、第三丁基、戊基 '己基、環己基、 庚基、辛基、十八烷基等。 上述一般式（a)中以R所示的芳基，以碳數6〜50 者爲佳，碳數6〜18者更佳。該芳基的具體例可舉出苯基 、萘基、蒽基、芘基、鹿基、聯苯基、三聯苯基等。 上述一般式（a )中以Ar表示的芳香族聚羥構造，以 碳數6〜50者爲佳，碳數6〜18者更佳。芳香族聚羥構造 的具體例可舉出以上述芳基的具體例所列舉基的構造。 〇 芳香族聚羥基化合物的具體例可舉出鄰苯二酚、第三 丁基苯二酚、間苯二酚、對苯二酚、焦掊酚、1，2,4-苯三 酚等，以使用對苯二酚爲佳。該等芳香族聚羥基化合物可 單獨使用1種，或倂用2種以上。 前述糖類的具體例可舉出木糖醇、山梨糖醇、阿糖醇 '甘露糖醇、葡萄糖、半乳糖等’以木糖醇及山梨糖醇爲 佳。該等糖類可單獨使用1種，或倂用2種以上。 本發明中，於防蝕劑（C )中芳香族聚羥基化合物與 糖類含有比例’自防蝕效果的觀點，以質量比9 : 1〜1 : -11 - 201035702 9的範圍爲佳，8 : 2〜5 : 5的範圍更佳。 本發明的防蝕性光阻剝離劑組成物並未限定 組成比，若爲具有可使用爲剝離劑的剝離功能者 對於前述極性有機溶劑（A )、有機胺化合物（ 蝕劑（C )的合計量，前述極性有機溶劑（A )名 98質量％、前述有機胺化合物（B )含有1〜79 前述防蝕劑（C)含有0.001〜10質量％爲佳，令 爲50〜96質量％、前述有機胺化合物（B)爲3' %、前述防蝕劑（C )含有0.0 I〜5質量％更佳。 述防蝕劑（C )即使含極微量亦具有防蝕效果 0.001〜10質量％爲佳，含有〇.〇1〜5質量％更佳 本發明的防蝕性光阻剝離劑組成物，即便含 蝕劑（C)爲0.001〜1質量％，進而含有極微量 0.5質量％亦顯示良好的防鈾性。 本發明的防蝕性光阻剝離劑組成物可進而含 般而言，因光阻剝離劑中存在水分，而容易引起 降低及無機質基體腐蝕，但本發明的防蝕性光阻 成物，不僅在無水的存在下，即便有水存在，亦 的防蝕效果。 本發明的防蝕性光阻剝離劑組成物中的水份 於前述極性有機溶劑（A )、有機胺化合物（B 劑（C)的合計量爲1〇〇質量份，水爲10〇質量 佳’ 20質量份以下更佳。另一方面，自防蝕性 劑組成物的可燃性低、易於使用的觀點，相對於 其具體的 即佳，相 B )及防 $有 2 0〜 質量°/。及 Γ 有（A ) 〜49質量 另外，前 ，以含有 〇 有前述防 的 0_01〜 有水。一 剝離功能 剝離劑組 表現優異 量，相對 )及防蝕 份以下爲 光阻剝離 前述極性 -12- 201035702 有機溶劑（A )、有機胺化合物（B )及防餓劑（C )的合 計量爲100質量份，水爲含有20質量份以上爲佳，含20 〜100質量份更佳。 使用不僅在無水的存在下，即便有水存在亦具效果的 本發明的防蝕性光阻剝離劑組成物時，由於在寬的溫度範 圍下可表現均勻的防蝕效果’容易進行溫度控制，自剝離 性能的觀點而言具有可決定最適溫度的優點。本發明的防 0 蝕性光阻剝離劑組成物以於3 0〜9 〇 °c爲佳、4 0〜8 0。(：更 佳、6 5〜8 0 °C最佳的溫度下使用時，可更顯著地表現本發 明的效果。 本發明的防蝕性光阻剝離劑組成物對各式各樣的無機 質基體具有防蝕功能。無機質基體可舉出二氧化矽、聚二 氧化矽、二氧化矽氧化膜、鋁、鋁合金、鈦、鈦鎢矽化物 、氮化鈦、鎢等半導體配線材料或鎵-砷、鎵-磷、銦-磷 等的化合物半導體，進而爲L C D的玻璃基板等，特別係 〇 對鋁、鋁合金（A1-CU)、銅、銥、鈦等金屬類、二氧化 矽、聚二氧化矽等具優異的防蝕效果。 本發明的防蝕性光阻剝離劑組成物可使用於剝離塗佈 於無機質基體上的光阻膜、或對塗佈於無機質基體上的光 阻膜進行乾式蝕刻後殘存的光阻層、或者是乾式蝕刻後進 行光阻灰化後殘存的光阻殘渣物等無機質基體上的光阻膜 ’進行該等剝離步驟時，可因應需要適宜地進行加熱或併 用超音波等。另外，藉由本發明的防蝕性光阻剝離劑組成 物的處理方法，一般爲噴灑法，但亦可使用浸漬法等。 -13- 201035702 【實施方式】 實施例 以下以實施例及比較例更詳細地說明本發明，但本發 明因該等例子而有所限定。 〈混合成分〉 實施例1〜1 7及比較例1〜1 〇中所使用的混合成分如 下所示。 極性有機溶劑（A )： 3-甲氧基-Ν,Ν-二甲基丙醯胺 二乙二醇單丁基醚（BDG，和光純藥工業股份有限公 司製） 有機胺化合物（Β )： Ν-甲基乙醇胺（N-MeEtAm，和光純藥工業股份有限 公司製） 單乙醇胺（MEA，和光純藥工業股份有限公司製） N，N-二甲基乙醇胺（DMAE，和光純藥工業股份有限 公司製） 防蝕劑（C )： 芳香族聚羥基化合物： -14- 201035702 對苯二酚（和光純藥工業股份有限 糖類： 木糖醇（Sigma-Aldrich公司製） 山梨糖醇（純正化學股份有限公司 實施例1 0 將86.5質量％的3-甲氧基-Ν,Ν-二 質量％的N-MeEtAm作爲基底，添加A 苯二酚及0.5質量％的木糖醇所構成的 ，調製成防蝕性光阻剝離劑組成物。混 另外針對所得之防蝕性光阻剝離劑組成 銅及鋁的腐蝕速度、水濃度相關性及溫 〇 〇 (腐鈾速度的評價） 於玻璃板上分別進行Al、Cu蒸鍍 作爲2種試驗片。將上述所得之防蝕性 維持於60°C ’並浸漬2種試驗片33分 驗片以異丙醇充分洗淨，之後使其風乾 定表面電阻，計算腐蝕速度。分別將對 價結果示於表2，對A1腐蝕速度的評儐 (水濃度相關性的評價） 公司製） 製） 甲基丙醯胺與1 2.5 .由0.5質量％的對 1.0質量％的防蝕劑 合比例示於表1。 物，以下述順序對 度相關性進行評價 (約7000A )後製 光阻剝離劑組成物 鐘。浸漬後，將試 並以4點探針法測 Cu腐蝕速度的評 結果示於表3。 -15- 201035702 相對於1 00質量份的防蝕性光阻剝離劑組成物，添加 1〜99質量份的水，以與上述相同方法進行腐蝕速度的評 價。分別將對Cu腐蝕速度的評價結果示於表2，對A1腐 蝕速度的評價結果示於表3。 (溫度相關性的評價） 針對處理溫度4 0 °C及8 0 °C，分別以與上述相同方法 進行腐蝕速度的評價。各溫度的腐蝕速度的評價結果示於 表4。 實施例2 除以表1表示的組成比之外，以與實施例1相同方法 調製光阻剝離劑組成物，並評價其腐蝕速度及水濃度相關 性。分別將對C u腐蝕速度的評價結果示於表2，對A1腐 蝕速度的評價結果示於表3。 比較例1及2 除以表1表示的混合比例之外，以與實施例1相同方 法調製光阻剝離劑組成物，並評價其腐蝕速度及水濃度相 關性。分別將對Cu腐蝕速度的評價結果示於表2，對A1 腐蝕速度的評價結果示於表3。 比較例3 除以表1表示的混合比例之外，以與實施例1相同方 -16- 201035702 法調製光阻剝離劑組成物，並評價其腐蝕速度及水濃度相 關性及溫度相關性。分別將對Cu腐蝕速度的評價結果示 於表2，對A1腐鈾速度的評價結果示於表3，溫度相關性 的評價結果示於表4。 表1 實施例 1 實施例 2 比較例 1 比較例 2 比較 例3 混合比例 (質量％) 3-甲氧基-Ν,Ν- 二甲基丙醯胺 86.5 86.5 87.5 86.6 86.6 N-MeEtAm 12.5 12.5 12.5 12.5 12.5 對苯二酚 0.5 0.5 _ _ 0.9 木糖醇 0.5 _ • 0.9 - 山梨糖醇 - 0.5 - _ 表2Rm-Ar-( OH) n (a) -10 - 201035702 (wherein R is an alkyl group or an aryl group, and an Ar-based aromatic hydrocarbon structure, and m is 〇~4' is preferably an integer of 1 to 2, The η system 2 to 6' is preferably an integer of 2 to 4). In the above general formula (a), the R is a group or an aryl group. The alkyl group represented by R in the above general formula (a) is preferably a carbon number of from 1 to 50, more preferably a carbon number of from 1 to 20. The alkyl group may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a second butyl group, and a third butyl group. , pentyl 'hexyl, cyclohexyl, heptyl, octyl, octadecyl and the like. The aryl group represented by R in the above general formula (a) is preferably a carbon number of 6 to 50, and more preferably a carbon number of 6 to 18. Specific examples of the aryl group include a phenyl group, a naphthyl group, an anthracenyl group, a fluorenyl group, a deer group, a biphenyl group, and a terphenyl group. The aromatic polyhydroxy structure represented by Ar in the above general formula (a) is preferably a carbon number of 6 to 50, and more preferably a carbon number of 6 to 18. Specific examples of the aromatic polyhydroxy structure include those having a specific example of the above aryl group. Specific examples of the fluorene aromatic polyhydroxy compound include catechol, tert-butylbenzenediol, resorcinol, hydroquinone, pyrogallol, and 1,2,4-benzenetriol. It is preferred to use hydroquinone. These aromatic polyhydroxy compounds may be used alone or in combination of two or more. Specific examples of the saccharide include xylitol, sorbitol, arabitol 'mannitol, glucose, galactose, etc.', and xylitol and sorbitol are preferred. These saccharides may be used alone or in combination of two or more. In the present invention, in the corrosion inhibitor (C), the ratio of the aromatic polyhydroxy compound to the saccharide content is 'self-anti-corrosion effect, and the ratio of the mass ratio of 9:1 to 1: -11 - 201035702 9 is preferable, 8: 2~ The 5:5 range is better. The composition of the anti-corrosion photoresist stripper of the present invention is not limited to a composition ratio, and the total polar organic solvent (A) and the organic amine compound (corrosion (C) are combined for the peeling function which can be used as a release agent. The polar organic solvent (A) is 98% by mass, and the organic amine compound (B) is 1 to 79. The corrosion inhibitor (C) is preferably 0.001 to 10% by mass, preferably 50 to 96% by mass, and the organic amine. The compound (B) is 3%, and the corrosion inhibitor (C) is preferably contained in an amount of 0.01 to 5% by mass. The corrosion inhibitor (C) has an anticorrosive effect of 0.001 to 10% by mass even if it contains a very small amount, and contains ruthenium. More preferably, the anti-corrosive photoresist release agent composition of the present invention exhibits good uranium resistance even when the corrosion inhibitor (C) is 0.001 to 1% by mass and further contains 0.5% by mass. The anti-corrosive photoresist stripper composition of the invention may further contain a moisture-reducing agent in the resist release agent, which is liable to cause a decrease and an inorganic matrix corrosion. However, the anti-corrosion photoresist of the present invention is not only anhydrous. In the presence, even if water is present, The anti-corrosion effect of the anti-corrosion photoresist stripper composition of the present invention is 1 part by mass of the polar organic solvent (A) and the organic amine compound (B agent (C), and the water is 10 parts by weight. 〇Good quality is better than 20 parts by mass. On the other hand, the viewpoint of low flammability and easy to use of the self-corrosive agent composition is better than its specific, phase B) and anti-$20~ quality °/. and Γ There are (A) ~49 masses. In addition, before, it contains 0_01~ with water. The stripping function stripper shows excellent amount, relative) and the anti-corrosion part is the resist stripping of the aforementioned polarity. -12- 201035702 The total amount of the organic solvent (A), the organic amine compound (B) and the anti-hungry agent (C) is 100 parts by mass, and the water is preferably 20 parts by mass or more, more preferably 20 to 100 parts by mass. When the anticorrosive photoresist stripper composition of the present invention is used not only in the presence of anhydrous, but also in the presence of water, since it can exhibit a uniform anticorrosive effect over a wide temperature range, temperature control is easy, and self-peeling From the standpoint of performance, there is an advantage that the optimum temperature can be determined. The composition of the etch-resistant photoresist stripper of the present invention is preferably from 30 to 9 〇 ° C and from 40 to 80. (: More preferably, when used at an optimum temperature of 6 5 to 80 ° C, the effect of the present invention can be more prominently exhibited. The anti-corrosive photoresist stripper composition of the present invention has a wide variety of inorganic substrates. Anti-corrosion function. Examples of the inorganic matrix include cerium oxide, poly cerium oxide, cerium oxide oxide film, semiconductor wiring materials such as aluminum, aluminum alloy, titanium, titanium tungsten lanthanide, titanium nitride, tungsten, or gallium-arsenic or gallium. - a compound semiconductor such as phosphorus or indium-phosphorus, and further a glass substrate of an LCD, etc., particularly for aluminum, aluminum alloy (A1-CU), metals such as copper, bismuth, and titanium, cerium oxide, and poly cerium oxide. The anti-corrosion photoresist stripper composition of the present invention can be used for peeling off a photoresist film coated on an inorganic substrate or after dry etching of a photoresist film coated on an inorganic substrate. When the photoresist layer on the inorganic substrate such as the resist residue after the dry etching and the photoresist residue after the photoresist is removed by dry etching, the peeling step can be appropriately performed, or the ultrasonic wave can be used in combination as needed. In addition, borrow The method for treating the anti-corrosive photoresist stripper composition of the present invention is generally a spraying method, but a dipping method or the like may be used. -13 - 201035702 [Embodiment] Examples Hereinafter, the examples and comparative examples will be described in more detail. The present invention is not limited to these examples. <Mixing component> The mixing components used in Examples 1 to 17 and Comparative Examples 1 to 1 are as follows. Polar organic solvent (A): 3- Methoxy-oxime, Ν-dimethylpropionamine diethylene glycol monobutyl ether (BDG, manufactured by Wako Pure Chemical Industries, Ltd.) Organic amine compound (Β): Ν-methylethanolamine (N-MeEtAm) , manufactured by Wako Pure Chemical Industries Co., Ltd.) Monoethanolamine (MEA, manufactured by Wako Pure Chemical Industries, Ltd.) N,N-Dimethylethanolamine (DMAE, manufactured by Wako Pure Chemical Industries, Ltd.) Corrosion inhibitor (C): Aromatic Polyhydroxyl Compound: -14- 201035702 Hydroquinone (Wako Pure Chemical Industries Co., Ltd. Limited Sugar: Xylitol (Sigma-Aldrich)) Sorbitol (Pure Chemical Co., Ltd. Example 1 0 will be 86.5 mass% 3-A Base-antimony, bismuth-twentieth% N-MeEtAm as a substrate, adding A benzenediol and 0.5% by mass of xylitol to prepare an anti-corrosion photoresist stripper composition. Corrosion rate, water concentration correlation and temperature enthalpy (evaluation of humus uranium rate) of copper and aluminum in the composition of the photoresist. The Al and Cu vapor deposition was carried out on the glass plate as two kinds of test pieces. Maintaining at 60 ° C ' and immersing two kinds of test pieces 33 points, the test pieces were thoroughly washed with isopropyl alcohol, and then air-dried to determine the surface resistance, and the corrosion rate was calculated. The results of the evaluation are shown in Table 2, respectively. Evaluation (Evaluation of Water Concentration Correlation) Manufactured by the company) Methylpropionamide and 12.5. The ratio of 0.5% by mass to 1.0% by mass of the corrosion inhibitor is shown in Table 1. The degree correlation was evaluated in the following order (about 7000 A) and the photoresist stripper composition was made up. After the immersion, the results of the Cu corrosion rate measured by the 4-point probe method are shown in Table 3. -15-201035702 To 1 to 99 parts by mass of the anti-corrosion photoresist stripper composition, 1 to 99 parts by mass of water was added, and the corrosion rate was evaluated in the same manner as above. The evaluation results of the Cu corrosion rate are shown in Table 2, and the evaluation results of the A1 corrosion rate are shown in Table 3. (Evaluation of temperature dependency) Corrosion rates were evaluated in the same manner as above for the treatment temperatures of 40 ° C and 80 ° C, respectively. The evaluation results of the corrosion rates at the respective temperatures are shown in Table 4. (Example 2) A photoresist stripper composition was prepared in the same manner as in Example 1 except for the composition ratio shown in Table 1, and the corrosion rate and water concentration correlation were evaluated. The evaluation results of the Cu corrosion rate are shown in Table 2, and the evaluation results of the A1 corrosion rate are shown in Table 3. Comparative Examples 1 and 2 The photoresist stripper composition was prepared in the same manner as in Example 1 except for the mixing ratio shown in Table 1, and the corrosion rate and water concentration correlation were evaluated. The evaluation results of the Cu corrosion rate are shown in Table 2, and the evaluation results of the A1 corrosion rate are shown in Table 3. Comparative Example 3 A photoresist stripper composition was prepared in the same manner as in Example 1 except for the mixing ratio shown in Table 1, and the corrosion rate, water concentration correlation, and temperature dependency were evaluated. The evaluation results of the corrosion rate of Cu are shown in Table 2, and the evaluation results of the velocity of A1 uranium are shown in Table 3. The evaluation results of the temperature dependence are shown in Table 4. Table 1 Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Mixing ratio (% by mass) 3-methoxy-indole, hydrazine-dimethylpropionamide 86.5 86.5 87.5 86.6 86.6 N-MeEtAm 12.5 12.5 12.5 12.5 12.5 Hydroquinone 0.5 0.5 _ _ 0.9 Xylitol 0.5 _ • 0.9 - Sorbitol - 0.5 - _ Table 2
水添加量 (質量份） Cu腐蝕速度（A/s) 實施例 1 實施例 2 比較例 1 比較例 2 比較例 3 0 0.02 0.01 0.28 0.32 0.04 1 0.03 0.04 0.25 0.34 0.05 5 0.03 _ 0.28 - 10 0.03 0.28 0.36 _ 40 0.04 0.04 0.30 0.40 0.05 70 0.06 0.08 _ • 0.15 90 0.03 0.03 0.23 0.36 0.17 95 0.04 0.11 - _ • 99 0.09 0.13 _ - _ -17- 201035702 表3 水添加量 (質量份） A1腐蝕速度（A/s) 實施例 1 實施例 2 比較例 1 比較例 2 比較例 3 0 0 0.01 0.02 0.02 0.02 1 0.01 0.01 0.03 0.02 0.04 5 0.01 0 0.05 一 10 0 0.01 0.10 _ 40 0.16 0.16 0.90 0.2 0.2 70 1.16 1.18 - 1.24 1.22 90 - - _ _ 95 • 一 - _ _ 99 1.22 1.24 - - - 表4 實施例 比較例 比較例 比較例 1 3 4 7 Cu腐蝕速度 (A/s) 40°C 0.00 0.02 0.18 0.21 60°C 0.02 0.04 0.20 0.24 80°C 0.01 0.02 0.17 0.16 A1腐蝕速度 (A/s) 40°C 0.00 0.02 0.01 0.01 60°C 0.00 0.02 0.00 0.04 80°C 0.00 0.00 0.01 0.00 與含有對苯二酚及糖類的實施例1及2相比，不含該 等化合物的比較例1、僅含木糖醇的比較例2、僅含對苯 二酚的比較例3對銅的腐蝕速度特別快，可得知實施例1 及2所得之防蝕性光阻剝離劑組成物，對銅及鋁任一種均 具有優異的防蝕性。 另夕f ’實施例1及2中即便於防蝕性光阻剝離劑組成 物中添加水，相對於其於廣幅的水濃度範圍下仍可表現優 -18 - 201035702 異的防蝕性，在比較例1〜3中，隨著水濃度的增加，特 別是對銅的腐蝕速度顯著地變快。 進而實施例1所得之防蝕性光阻剝離劑組成物，相對 於在40〜80 °C廣幅的溫度範圍下仍可表現的防蝕性，比 較例3、4及7所得之防蝕性光阻剝離劑組成物，會因溫 度而特別對銅的腐蝕速度變快。 實施例3及4 除以表5表示的混合比例之外，以與實施例1相同方 法調製防蝕性光阻剝離劑組成物，並評價該等的腐蝕速度 。評價結果示於表5。 表5 實施例3 實施例4 混合比例 (質量％) 3-甲氧基-N，N-二甲基丙醯胺 86.5 86.5 MEA 12.5 DMAE 一 12.5 對苯二酚 0.5 0.5 木糖醇 0.5 0.5 腐飩速度(A/s) Cu 0.07 0.01 A1 0.02 0.00 以實施例3及4爲基礎，藉由使用不同的胺，藉由倂 用防蝕劑之防蝕效果是否不同的檢討。分別於實施例3在 3 -甲氧基-N，N -二甲基丙醯胺中混合單乙醇胺，在實施例4 中混合三級烷醇胺的D M A E，得表5所示腐蝕速度的評價 結果。由該結果可得知，於倂用該二防蝕劑時效果，混合 -19- 201035702 二級胺或三級胺系者，較混合一級胺時，更能發揮較大的 效果。 實施例5〜1 3 除以表6及7表示的混合比例之外，以與實施例1相 同方法調製防蝕性光阻剝離劑組成物。相對於1 00質量份 的所得的防蝕性光阻剝離劑組成物，添加40質量份的水 ，並評價其腐蝕速度。評價結果示於表6及7。 表6 實S 酬 1 5 6 7 8 9 混合比例 (Mm%) 3-甲氧基-N，N- 二甲基丙醯胺 86.5 87.4 87.4 87.4 87.4 87.4 N-MeEtAm 12.5 12.5 12.5 12.5 12.5 12.5 對苯二酚 0.500 0.050 0.010 0.030 0.060 0.070 木糖醇 0.500 0.050 0.090 0.070 0.040 0.030 水添加量（質量份） 40 40 40 40 40 40 腐蝕速度 (A/s) Cu 0.04 0.05 0.04 0.05 0.03 0.02 A1 0.16 0.16 0.21 0.24 0.13 0.04 -20 - 201035702 表7 實施例 10 11 12 13 混合比例 (質量％) 3-甲氧基-N，N- 一甲基丙醯胺 87.4 87.49 87.49 87.49 N-MeEtAm 12.5 12.5 12.5 12.5 對苯二酚 0.090 0.005 0.001 0.009 木糖醇 0.010 0.005 0.009 0.001 水添加量（質量份） 40 40 40 40 腐蝕速度 (A/s) Cu 0.04 0.05 0.06 0.05 A1 0.13 - - 實施例1 4 除以表8表示的混合比例之外，以與實施例1相同方 法調製防蝕性光阻剝離劑組成物。相對於1 〇〇質量份的所 得的防蝕性光阻剝離劑組成物，添加1 0質量份的水，並 評價其腐蝕速度。評價結果示於表8。 比較例4 除以表8表示的混合比例之外，以與實施例14相同 方法調製光阻剝離劑組成物，並評價其腐蝕速度及溫度相 關性。腐蝕速度的評價結果示於表8，溫度相關性的評價 結果示於表4。 比較例5及6 除以表8表示的混合比例之外，以與實施例1 4相同 方法調製光阻剝離劑組成物，並評價其腐蝕速度。評價結 -21 - 201035702 果示於表8。 表8 實施例14 比較例4 比較例5 比較例ό 混合比例 (質量％) DMSO 29.0 30.0 29.0 29.1 MEA 70.0 70.0 70.0 70.0 對苯二酚 0.5 • 0.9 木糖醇 0.5 - 1.0 • 水添加量（質量 份） 10 10 10 10 腐蝕速度 (A/s) Cu 0.08 0.24 0.35 0.15 A1 0.01 0.04 0.03 0.03 實施例1 5 除以表9表示的混合比例之外，以與實施例1相同方 法調製防蝕性光阻剝離劑組成物。評價所得的防蝕性光阻 剝離劑組成物的腐蝕速度。評價結果示於表9。 比較例7 除以表9表示的混合比例之外，以與實施例1 5相同 方法調製光阻剝離劑組成物，並評價其腐蝕速度及溫度相 關性。腐蝕速度的評價結果示於表9，溫度相關性的評價 結果示於表4。 比較例8及9 除以表9表示的混合比例之外，以與實施例I 5相同 方法調製光阻剝離劑組成物，評價腐蝕速度。評價結果示 於表9。 -22- 201035702 表9 實施例15 比較例7 比較例8 比較例9 混合比例 (質量％) BDG 69.0 70.0 69.0 69.1 MEA 30.0 30.0 30.0 30.0 對苯二酚 0.5 . 0.9 木糖醇 0.5 _ 1.0 _ 水添加量（質量份） 0 0 0 0 腐蝕速度 (A/s) Cu 0.07 0.24 0.23 0.13 A1 0.02 0.04 0.03 0.04 實施例1 6 使用山梨糖醇取代木糖醇，除以表10表示的混合比 例之外，以與實施例1相同方法調製防蝕性光阻剝離劑組 成物，評價腐蝕速度。評價結果示於表1 0。另外對防蝕 性光阻剝離劑組成物的剝離性能以下述順序進行評價。 (剝離性能的評價） 於充分洗淨的玻璃基板上，將正型光阻組成物（富士 FILM Electronic Materials 股份有限公司製，HPR204， 8cps )，以旋轉塗佈機（750rpmx20s )進行塗佈，並於烤 箱中以下述條件進行燒成。 燒成條件：80°Cxl5分鐘 + 130°Cxl5分鐘+ 160°Cx 15分鐘 將該玻璃基板切割爲5 X 5 m m大小後得試驗片。 -23- 201035702 於燒杯中置入約10毫升的防蝕性光阻剝離劑組成物 ，以油浴維持7 0 °C恆溫。將試驗片浸漬於其中’ 2分鐘後 取出後立即以純水充分潤洗之後’以風乾方式使其乾燥。 以掃描型電子顯微鏡（S EM )觀察試驗片後，確認光 阻完全被去除。 比較例1 〇 除以表1 〇表示的混合比例之外，以與實施例1 6相同 方法調製光阻剝離劑組成物，並評價其腐蝕速度。結果示 於表1 〇。 表10 實施例 16 比較例 10 混合比例 (質量％) 3-甲氧基-N，N- 二甲基丙醯胺 87.4 87.41 N-MeEtAm 12.5 12.5 對苯二酚 0.05 • 山梨糖醇 0.05 0.09 腐蝕速度 (A/s) Cu 0.03 0.24 A1 0.02 0.03 根據實施例1、5〜1 3及1 6以及比較例1 0，確認經 由以芳香族聚羥基化合物與糖類倂用配方後的本發明之防 蝕性光阻剝離劑組成物，即使整體的防蝕劑濃度爲低濃度 ’亦可發揮充分的防蝕效果。反之，單獨將山梨糖醇以低 濃度添加（比較例1 0 )時，雖可確認對鋁的防蝕效果， -24- 201035702 但卻大大地進行對銅的腐蝕。 如上所述，確認了本發明之防蝕性光阻剝離劑組成物 無溫度相關性，且於寬廣的溫度下顯示高防蝕性，另外於 寬廣的水濃度下亦顯不防触效果。 另外根據圖1、2，可得知將對苯二酚與木糖醇或山 梨糖醇倂用時，較以木糖醇及對苯二酚單獨配方的光阻剝 離劑於水添加量的全部範圍內，對銅及鋁任一種均具有高 0 防蝕性。進而根據圖3、4可確認本發明之防蝕性光阻剝 離劑組成物，溫度相關性較其他的防蝕配方爲低，且於各 種溫度下均可充分地發揮對銅及鋁任一種的防蝕效果。 產業上的可利用性 如以上的詳細說明，本發明之防蝕性光阻剝離劑組成 物’對銅及鋁任一種均顯示優異的防蝕效果，另外由於水 濃度相關性及溫度相關性低，可適用爲塗佈於無機基體上 Q 的光阻的剝離劑等。 【圖式簡單說明】 [圖1]表示於實施例1、2與比較例1〜3中調製的 (防蝕性）光阻剝離劑組成物，與各水添加量及銅腐蝕速 度的相關圖（表2 )。 [圖2 ]表示於實施例1、2與比較例1〜3中調製的 (防蝕性）光阻剝離劑組成物，與各水添加量及鋁腐蝕速 度的相關圖（表3)。 -25- 201035702 [圖3 ]表示於實施例1與比較例3、4及7中調製的 (防蝕性）光阻剝離劑組成物，於各溫度下Cu腐鈾速度 圖（表4 )。 [圖4]表示於實施例1與比較例3、4及7中調製的 (防蝕性）光阻剝離劑組成物，於各溫度下 A1腐蝕速度 圖（表4)。Water addition amount (parts by mass) Cu corrosion rate (A/s) Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 0 0.02 0.01 0.28 0.32 0.04 1 0.03 0.04 0.25 0.34 0.05 5 0.03 _ 0.28 - 10 0.03 0.28 0.36 _ 40 0.04 0.04 0.30 0.40 0.05 70 0.06 0.08 _ • 0.15 90 0.03 0.03 0.23 0.36 0.17 95 0.04 0.11 - _ • 99 0.09 0.13 _ - _ -17- 201035702 Table 3 Water addition amount (parts by mass) A1 Corrosion rate (A /s) Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 0 0 0.01 0.02 0.02 0.02 1 0.01 0.01 0.03 0.02 0.04 5 0.01 0 0.05 A 10 0 0.01 0.10 _ 40 0.16 0.16 0.90 0.2 0.2 70 1.16 1.18 - 1.24 1.22 90 - - _ _ 95 • One - _ _ 99 1.22 1.24 - - - Table 4 Example Comparative Example Comparative Example Comparative Example 1 3 4 7 Cu Corrosion Rate (A/s) 40°C 0.00 0.02 0.18 0.21 60° C 0.02 0.04 0.20 0.24 80°C 0.01 0.02 0.17 0.16 A1 Corrosion rate (A/s) 40°C 0.00 0.02 0.01 0.01 60°C 0.00 0.02 0.00 0.04 80°C 0.00 0.00 0.01 0.00 With hydroquinone and sugar Compared with Examples 1 and 2, the compounds are not contained. In Comparative Example 1, Comparative Example 2 containing only xylitol, and Comparative Example 3 containing only hydroquinone, the corrosion rate of copper was particularly fast, and the anti-corrosion photoresist stripper compositions obtained in Examples 1 and 2 were known. It has excellent corrosion resistance to both copper and aluminum. In addition, in the examples 1 and 2, even if water is added to the composition of the anti-corrosion photoresist stripper, the anti-corrosion property of the excellent -18 - 201035702 can be exhibited in comparison with the wide water concentration range, in comparison In Examples 1 to 3, as the water concentration increased, the corrosion rate of copper in particular increased remarkably. Further, the anticorrosive photoresist stripper composition obtained in Example 1 exhibited corrosion resistance comparable to that in a wide temperature range of 40 to 80 ° C, and the resist resist stripping obtained in Comparative Examples 3, 4 and 7 The composition of the agent will be particularly fast against copper due to temperature. Examples 3 and 4 The corrosion-resistant photoresist release agent compositions were prepared in the same manner as in Example 1 except for the mixing ratios shown in Table 5, and the corrosion rates were evaluated. The evaluation results are shown in Table 5. Table 5 Example 3 Example 4 Mixing ratio (% by mass) 3-methoxy-N,N-dimethylpropanamide 86.5 86.5 MEA 12.5 DMAE-12.5 hydroquinone 0.5 0.5 xylitol 0.5 0.5 rot Speed (A/s) Cu 0.07 0.01 A1 0.02 0.00 Based on Examples 3 and 4, by using different amines, the corrosion resistance of the anticorrosive agent was evaluated by using different anti-corrosion agents. The DMAE of the tertiary alkanolamine was mixed in Example 4 with 3-methoxy-N,N-dimethylpropionamide in Example 3, and the corrosion rate shown in Table 5 was evaluated. result. From the results, it can be seen that when the second anticorrosive agent is used, the mixing of -19-201035702 secondary amine or tertiary amine is more effective than mixing the primary amine. Examples 5 to 1 3 A corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1 except that the mixing ratios shown in Tables 6 and 7 were used. 40 parts by mass of water was added to 100 parts by mass of the obtained corrosion-resistant photoresist release agent composition, and the corrosion rate was evaluated. The evaluation results are shown in Tables 6 and 7. Table 6 Real S Remuneration 1 5 6 7 8 9 Mixing Ratio (Mm%) 3-Methoxy-N,N-Dimethylpropionamide 86.5 87.4 87.4 87.4 87.4 87.4 N-MeEtAm 12.5 12.5 12.5 12.5 12.5 12.5 Phenylene Diphenol 0.500 0.050 0.010 0.030 0.060 0.070 Xylitol 0.500 0.050 0.090 0.070 0.040 0.030 Water addition amount (parts by mass) 40 40 40 40 40 40 Corrosion rate (A/s) Cu 0.04 0.05 0.04 0.05 0.03 0.02 A1 0.16 0.16 0.21 0.24 0.13 0.04 -20 - 201035702 Table 7 Example 10 11 12 13 Mixing ratio (% by mass) 3-methoxy-N,N-methylpropanamide 87.4 87.49 87.49 87.49 N-MeEtAm 12.5 12.5 12.5 12.5 Hydroquinone 0.090 0.005 0.001 0.009 Xylitol 0.010 0.005 0.009 0.001 Water addition amount (parts by mass) 40 40 40 40 Corrosion rate (A/s) Cu 0.04 0.05 0.06 0.05 A1 0.13 - - Example 1 4 Divided by the mixing ratio shown in Table 8 The corrosion-resistant photoresist release agent composition was prepared in the same manner as in Example 1. To 100 parts by mass of the obtained anti-corrosion photoresist stripper composition, 10 parts by mass of water was added, and the corrosion rate was evaluated. The evaluation results are shown in Table 8. Comparative Example 4 A photoresist stripper composition was prepared in the same manner as in Example 14 except for the mixing ratio shown in Table 8, and the corrosion rate and temperature dependency were evaluated. The evaluation results of the corrosion rate are shown in Table 8, and the evaluation results of the temperature dependence are shown in Table 4. Comparative Examples 5 and 6 The photoresist stripper composition was prepared in the same manner as in Example 14 except that the mixing ratios shown in Table 8 were used, and the etching rate was evaluated. Evaluation Results -21 - 201035702 The results are shown in Table 8. Table 8 Example 14 Comparative Example 4 Comparative Example 5 Comparative Example ό Mixing ratio (% by mass) DMSO 29.0 30.0 29.0 29.1 MEA 70.0 70.0 70.0 70.0 Hydroquinone 0.5 • 0.9 Xylitol 0.5 - 1.0 • Water addition amount (parts by mass) 10 10 10 10 Corrosion rate (A/s) Cu 0.08 0.24 0.35 0.15 A1 0.01 0.04 0.03 0.03 Example 1 5 In addition to the mixing ratio shown in Table 9, the corrosion-resistant photoresist stripping was prepared in the same manner as in Example 1. Agent composition. The corrosion rate of the obtained anti-corrosion photoresist stripper composition was evaluated. The evaluation results are shown in Table 9. Comparative Example 7 A photoresist stripper composition was prepared in the same manner as in Example 15 except that the mixing ratios shown in Table 9 were used, and the corrosion rate and temperature dependency were evaluated. The evaluation results of the corrosion rate are shown in Table 9, and the evaluation results of the temperature dependence are shown in Table 4. Comparative Examples 8 and 9 The photoresist stripper composition was prepared in the same manner as in Example I1 except that the mixing ratios shown in Table 9 were used, and the corrosion rate was evaluated. The evaluation results are shown in Table 9. -22- 201035702 Table 9 Example 15 Comparative Example 7 Comparative Example 8 Comparative Example 9 Mixing ratio (% by mass) BDG 69.0 70.0 69.0 69.1 MEA 30.0 30.0 30.0 30.0 Hydroquinone 0.5 . 0.9 Xylitol 0.5 _ 1.0 _ Water addition Amount (parts by mass) 0 0 0 0 Corrosion rate (A/s) Cu 0.07 0.24 0.23 0.13 A1 0.02 0.04 0.03 0.04 Example 1 6 Using sorbitol instead of xylitol, divided by the mixing ratio shown in Table 10, The corrosion-resistant photoresist stripper composition was prepared in the same manner as in Example 1 to evaluate the corrosion rate. The evaluation results are shown in Table 10. Further, the peeling performance of the resist photoresist remover composition was evaluated in the following order. (Evaluation of Peeling Performance) A positive-type photoresist composition (HPR204, 8 cps manufactured by Fuji FILM Electronic Materials Co., Ltd.) was applied onto a sufficiently washed glass substrate by a spin coater (750 rpm x 20 s). The firing was carried out in an oven under the following conditions. Firing conditions: 80 ° C x 15 minutes + 130 ° C x 15 minutes + 160 ° C x 15 minutes The glass substrate was cut to a size of 5 X 5 m to obtain a test piece. -23- 201035702 Put about 10 ml of anti-corrosion photoresist stripper composition into the beaker and maintain a constant temperature of 70 °C in an oil bath. The test piece was immersed therein, and after 2 minutes, it was thoroughly rinsed with pure water immediately after it was taken out, and then dried by air drying. After observing the test piece with a scanning electron microscope (S EM ), it was confirmed that the photoresist was completely removed. Comparative Example 1 光 The photoresist stripper composition was prepared in the same manner as in Example 16 except that the mixing ratio shown in Table 1 〇 was used, and the etching rate was evaluated. The results are shown in Table 1. Table 10 Example 16 Comparative Example 10 Mixing ratio (% by mass) 3-methoxy-N,N-dimethylpropanamide 87.4 87.41 N-MeEtAm 12.5 12.5 Hydroquinone 0.05 • Sorbitol 0.05 0.09 Corrosion rate (A/s) Cu 0.03 0.24 A1 0.02 0.03 According to Examples 1, 5 to 13 and 16 and Comparative Example 10, it was confirmed that the corrosion-resistant light of the present invention after being formulated with an aromatic polyhydroxy compound and a saccharide was confirmed. The resist release agent composition exhibits a sufficient anti-corrosion effect even if the overall corrosion inhibitor concentration is low. On the other hand, when sorbitol was added at a low concentration alone (Comparative Example 10), the corrosion resistance to aluminum was confirmed, and -24-201035702 was greatly corroded. As described above, it was confirmed that the anti-corrosive photoresist stripper composition of the present invention has no temperature dependency, exhibits high corrosion resistance at a wide temperature, and exhibits a non-tactile effect at a wide water concentration. Further, according to Figs. 1 and 2, it can be seen that when hydroquinone is used together with xylitol or sorbitol, the amount of the photoresist stripping agent which is separately formulated with xylitol and hydroquinone is added to the water. Within the range, both copper and aluminum have high corrosion resistance. Furthermore, it can be confirmed from FIGS. 3 and 4 that the anti-corrosion photoresist stripper composition of the present invention has a lower temperature dependency than other anti-corrosion formulations, and can sufficiently exert an anti-corrosion effect on any of copper and aluminum at various temperatures. . INDUSTRIAL APPLICABILITY As described in detail above, the corrosion-resistant photoresist stripper composition of the present invention exhibits an excellent anti-corrosion effect for both copper and aluminum, and has low water concentration correlation and temperature dependency. It is suitable as a release agent or the like which is applied to the photoresist of Q on an inorganic substrate. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A graph showing the correlation between the amount of each of water added and the copper corrosion rate of the (corrosion resistant) photoresist stripper composition prepared in Examples 1 and 2 and Comparative Examples 1 to 3. Table 2 ). Fig. 2 is a graph showing the correlation between the amount of each of the water-added amount and the aluminum corrosion rate (Table 3) of the (corrosion-resistant) photoresist stripper composition prepared in Examples 1 and 2 and Comparative Examples 1 to 3. -25-201035702 [Fig. 3] Fig. 3 shows the uranium uranium velocity map (Table 4) at each temperature of the (corrosion resistant) photoresist stripper composition prepared in Example 1 and Comparative Examples 3, 4 and 7. Fig. 4 is a graph showing the A1 corrosion rate at each temperature of the (corrosion resistant) photoresist stripper composition prepared in Example 1 and Comparative Examples 3, 4 and 7. (Table 4).
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