TWI456758B - 具有低導通電阻之金氧半元件的幾何結構 - Google Patents

具有低導通電阻之金氧半元件的幾何結構 Download PDF

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TWI456758B
TWI456758B TW096150732A TW96150732A TWI456758B TW I456758 B TWI456758 B TW I456758B TW 096150732 A TW096150732 A TW 096150732A TW 96150732 A TW96150732 A TW 96150732A TW I456758 B TWI456758 B TW I456758B
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Sehat Sutardja
Ravishanker Krishnamoorthy
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Marvell World Trade Ltd
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Claims (17)

  1. 一種形成於一基材上的金氧半導體Metal Oxide Semiconductor,MOS)元件，該金氧半導體元件包含：一汲極區域，具有一正方形的形狀；一閘極區域，(i)其係圍繞該汲極區域並且(ii)圍繞該汲極區域形成一封閉迴圈，其中該封閉迴圈具有對應至該汲極區域的形狀之形狀；複數個源極區域，(i)其係排列成圍繞該閘極區域並(ii)與該汲極區域相對；以及複數個基板區域，(i)其係排列成圍繞該閘極區域並(ii)分隔該等源極區域，其中該汲極區域的每一邊都與該等源極區域中之一對準，且該源極區域的寬度與該汲極區域的寬度相等或較該汲極區域的寬度更寬。
  2. 如申請專利範圍第1項所述之金氧半導體元件，其中該基材具有對應至該汲極區域的形狀之形狀，並且該基板區域係排列在該基材的角落。
  3. 如申請專利範圍第1項所述之金氧半導體元件，其中一通道區域形成於該閘極區域之下。
  4. 如申請專利範圍第3項所述之金氧半導體元件，其中該通道區域配置成讓電流從每一源極區域流至該汲極區域。
  5. 如申請專利範圍第1項所述之金氧半導體元件，其中該金氧半導體元件為一電晶體。
  6. 如申請專利範圍第1項所述之金氧半導體元件，其中該基材為一矽基材，並且該閘極區域包含多晶矽。
  7. 如申請專利範圍第6項所述之金氧半導體元件，其中 該金氧半導體元件為一正方形雙擴散金氧半導體(SQDMOS)。
  8. 如申請專利範圍第1項所述之金氧半導體元件，其中：該汲極區域包含複數個汲極區域接點；該複數個源極區域中之至少一個具有複數個源極區域接點；以及該等汲極區域接點與該閘極區域間之一距離大於該等源極區域接點與該閘極區域間之一距離。
  9. 一種金氧半導體(MOS)元件，其具有在一基材上以一陣列方式形成的複數個金氧半導體電晶體單元，其中每一金氧半導體電晶體單元包含：一汲極區域，具有一正方形的形狀；一閘極區域，(i)其係圍繞該汲極區域並且(ii)圍繞該汲極區域形成一封閉迴圈，其中該封閉迴圈具有對應至該汲極區域的形狀之形狀；複數個源極區域，(i)其係排列成圍繞該閘極區域並(ii)與該汲極區域相對；以及複數個基板區域，(i)其排列成圍繞該閘極區域並(ii)分隔該等源極區域，其中該等源極區域與一相鄰金氧半導體電晶體單元的該對應源極區域重疊，且其中該汲極區域的每一邊都與該等源極區域中之一對準，且該源極區域的寬度與該汲極區域的寬度相等或較該汲極區域的寬度更寬。
  10. 一種用於在一基材上形成一金氧半導體(MOS)元件之方法，該方法包含：形成一汲極區域，具有一正方形的形狀；形成一閘極區域，其係以一封閉迴圈方式圍繞該 汲極區域，其中該封閉迴圈具有對應至該汲極區域的形狀之形狀；形成複數個源極區域，(i)其係排列成圍繞該閘極區域並(ii)與該汲極區域相對；以及形成複數個基板區域，(i)其係排列成圍繞該閘極區域並(ii)分隔該等源極區域，其中該汲極區域的每一邊都與該等源極區域中之一對準，且該源極區域的寬度與該汲極區域的寬度相等或較該汲極區域的寬度更寬。
  11. 如申請專利範圍第10項所述之方法，其中該基材具有對應至該汲極區域的形狀之形狀，並且該基板區域係排列在該基材的角落。
  12. 如申請專利範圍第10項所述之方法，其進一步包含在該閘極區域之下形成一通道區域。
  13. 如申請專利範圍第12項所述之方法，其中該通道區域配置成讓電流從每一源極區域流至該汲極區域。
  14. 如申請專利範圍第10項所述之方法，其中該基材為一矽基材，並且該閘極區域包含多晶矽。
  15. 如申請專利範圍第14項所述之方法，其中該金氧半導體元件為一正方形DMOS(SQDMOS)。
  16. 如申請專利範圍第10項所述之方法，其進一步包含在該汲極區域及該等源極區域內形成個別接點，其中該等汲極區域接點與該閘極區域間之距離大於該等源極區域接點與該閘極區域間之距離。
  17. 一種用於在一基材上形成一金氧半導體(MOS)電晶體單元之方法，其包含：在該基材上形成金氧半導體電晶體單元，其中每 一金氧半電晶體單元係由下列形成：形成一汲極區域，具有一正方形的形狀；形成一閘極區域，其係以一封閉迴圈方式圍繞該汲極區域，其中該封閉迴圈具有對應至該汲極區域的形狀之形狀；形成複數個源極區域，(i)其係排列成圍繞該閘極區域並(ii)與該汲極區域相對；以及形成複數個基板區域，(i)其係排列成圍繞該閘極區域並(ii)分隔該等源極區域，其中相鄰金氧半導體電晶體單元的該個別源極區域重疊，且其中該汲極區域的每一邊都與該等源極區域中之一對準，且該源極區域的寬度與該汲極區域的寬度相等或較該汲極區域的寬度更寬。
TW096150732A 2006-12-28 2007-12-28 具有低導通電阻之金氧半元件的幾何結構 TWI456758B (zh)

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7932577B2 (en) * 2007-12-31 2011-04-26 Silicon Laboratories, Inc. Circuit device and method of forming a circuit device having a reduced peak current density
US8076724B2 (en) * 2008-10-09 2011-12-13 Hvvi Semiconductors, Inc. Transistor structure having an active region and a dielectric platform region
EP2400552A1 (en) 2010-06-24 2011-12-28 Dialog Semiconductor GmbH Mos transistor structure with easy access to all nodes
CN102403310A (zh) 2010-09-13 2012-04-04 登丰微电子股份有限公司 金属氧化物半导体场效晶体管布局及结构
CN102142462B (zh) * 2011-02-25 2012-08-29 北京大学 一种非对称结构的功率mos晶体管及其阵列
WO2012158174A1 (en) * 2011-05-19 2012-11-22 Hewlett-Packard Development Company, L.P. Device active channel length/width greater than channel length/width
KR20150092828A (ko) * 2014-02-06 2015-08-17 정덕영 배터리의 충방전 제어회로를 위한 4-단자 fet
CN105097916A (zh) 2014-05-05 2015-11-25 中芯国际集成电路制造(上海)有限公司 Mos晶体管器件及其制作方法
CN104409503B (zh) * 2014-11-21 2017-05-17 中国科学院上海微系统与信息技术研究所 多叉指栅极结构mosfet的版图设计
US9356105B1 (en) * 2014-12-29 2016-05-31 Macronix International Co., Ltd. Ring gate transistor design for flash memory
EP3062349B1 (en) 2015-02-25 2019-10-09 Nxp B.V. Semiconductor device comprising a switch
CN106328508B (zh) * 2016-08-22 2019-02-01 上海华力微电子有限公司 改善有源区边界处的栅极拐角的方法
EP3352224B1 (en) * 2017-01-24 2020-03-11 Nxp B.V. Semiconductor device comprising a switch
US10811497B2 (en) 2018-04-17 2020-10-20 Silanna Asia Pte Ltd Tiled lateral BJT
US11309353B2 (en) * 2020-04-30 2022-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer-defined back-end transistor as memory selector
CN111599807B (zh) * 2020-05-22 2023-09-01 赛卓电子科技(上海)股份有限公司 一种标准mos工艺下提升性能的差分输入对管及提升方法
CN116344530A (zh) * 2021-12-24 2023-06-27 长鑫存储技术有限公司 晶体管单元及其阵列、集成电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW274150B (en) * 1995-10-17 1996-04-11 Winbond Electronics Corp Ring-packaged electric device

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783349A (en) * 1971-05-25 1974-01-01 Harris Intertype Corp Field effect transistor
JPS5737875A (en) 1980-08-20 1982-03-02 Hitachi Ltd Mos semiconductor device
JPS6173481A (ja) 1984-09-19 1986-04-15 Canon Inc 画像処理装置
JPS61290767A (ja) 1985-06-19 1986-12-20 Hitachi Ltd Ｍｏｓ電界効果トランジスタ
US5192989A (en) * 1989-11-28 1993-03-09 Nissan Motor Co., Ltd. Lateral dmos fet device with reduced on resistance
JP2626139B2 (ja) 1990-03-08 1997-07-02 日産自動車株式会社 パワーｍｏｓｆｅｔ
JPH0582782A (ja) * 1991-09-20 1993-04-02 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓｆｅｔ
JP2720783B2 (ja) * 1993-12-29 1998-03-04 日本電気株式会社 半導体集積回路
JP3136885B2 (ja) * 1994-02-02 2001-02-19 日産自動車株式会社 パワーｍｏｓｆｅｔ
DE19581809B4 (de) * 1995-04-06 2008-12-24 Transpacific Ip, Ltd. MOS-Zelle, Mehrfachzellentransistor und IC-Chip
US5714784A (en) * 1995-10-19 1998-02-03 Winbond Electronics Corporation Electrostatic discharge protection device
TW281798B (en) 1996-03-16 1996-07-21 Winbond Electronics Corp Hexagon transistor element
JP3276325B2 (ja) 1996-11-28 2002-04-22 松下電器産業株式会社 半導体装置
JP3257969B2 (ja) 1997-07-22 2002-02-18 花王株式会社 液体柔軟仕上げ剤組成物
JPH1174505A (ja) 1997-08-27 1999-03-16 Fujitsu Ltd 半導体装置
JPH1174517A (ja) * 1997-08-29 1999-03-16 Matsushita Electric Works Ltd 半導体装置
US5965925A (en) 1997-10-22 1999-10-12 Artisan Components, Inc. Integrated circuit layout methods and layout structures
JP2002503034A (ja) 1998-02-07 2002-01-29 ゼモッド・インコーポレイテッド ソース領域を裏面に接続するプラグを含む、ラテラルｒｆｍｏｓデバイスのための擬似メッシュゲート構造
JPH11251445A (ja) 1998-02-27 1999-09-17 Rohm Co Ltd 半導体素子
US6064088A (en) 1998-06-15 2000-05-16 Xemod, Inc. RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
JP2000208759A (ja) 1999-01-12 2000-07-28 Rohm Co Ltd 半導体装置
EP1115158A1 (en) 2000-01-05 2001-07-11 Mitsubishi Denki Kabushiki Kaisha Soi-misfet
JP2001257360A (ja) * 2000-01-05 2001-09-21 Mitsubishi Electric Corp 半導体装置
US7115946B2 (en) 2000-09-28 2006-10-03 Kabushiki Kaisha Toshiba MOS transistor having an offset region
JP2002110970A (ja) 2000-09-28 2002-04-12 Toshiba Corp 半導体装置
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6724044B2 (en) * 2002-05-10 2004-04-20 General Semiconductor, Inc. MOSFET device having geometry that permits frequent body contact
JP4158453B2 (ja) * 2002-08-22 2008-10-01 株式会社デンソー 半導体装置及びその製造方法
JP2004186511A (ja) 2002-12-04 2004-07-02 Nec Electronics Corp 静電気放電保護素子
US6798022B1 (en) * 2003-03-11 2004-09-28 Oki Electric Industry Co., Ltd. Semiconductor device with improved protection from electrostatic discharge
JP2006120952A (ja) 2004-10-22 2006-05-11 Fuji Electric Holdings Co Ltd Ｍｉｓ型半導体装置
JP4892847B2 (ja) 2005-03-17 2012-03-07 Ｄｉｃ株式会社 高分子分散型液晶表示素子用組成物及び高分子分散型液晶表示素子
JP4890793B2 (ja) * 2005-06-09 2012-03-07 トヨタ自動車株式会社 半導体装置の製造方法
EP2030237B1 (en) 2006-05-08 2011-02-09 Marvell World Trade Ltd. Efficient transistor structure
US20090072314A1 (en) 2007-09-19 2009-03-19 Texas Instruments Incorporated Depletion Mode Field Effect Transistor for ESD Protection
JP2008078469A (ja) * 2006-09-22 2008-04-03 Texas Instr Japan Ltd 電界効果トランジスタ
JP5082782B2 (ja) 2007-11-09 2012-11-28 大日本印刷株式会社 データ処理方法、ｉｃカードおよびｉｃカードプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW274150B (en) * 1995-10-17 1996-04-11 Winbond Electronics Corp Ring-packaged electric device

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CN101657901A (zh) 2010-02-24
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US9466596B2 (en) 2016-10-11
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