DE602005022561D1 - Verfahren zum herstellen eines halbleiterbauelements - Google Patents

Verfahren zum herstellen eines halbleiterbauelements

Info

Publication number
DE602005022561D1
DE602005022561D1 DE602005022561T DE602005022561T DE602005022561D1 DE 602005022561 D1 DE602005022561 D1 DE 602005022561D1 DE 602005022561 T DE602005022561 T DE 602005022561T DE 602005022561 T DE602005022561 T DE 602005022561T DE 602005022561 D1 DE602005022561 D1 DE 602005022561D1
Authority
DE
Germany
Prior art keywords
drain
source
extensions
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022561T
Other languages
English (en)
Inventor
Radu C Surdeanu
Gerben Doornbos
Dal Marcus J Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of DE602005022561D1 publication Critical patent/DE602005022561D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H01L29/66507—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide providing different silicide thicknesses on the gate and on source or drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H01L29/66598—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE602005022561T 2004-02-19 2005-02-10 Verfahren zum herstellen eines halbleiterbauelements Active DE602005022561D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04100653 2004-02-19
PCT/IB2005/050527 WO2005083769A1 (en) 2004-02-19 2005-02-10 Semiconductor device and method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
DE602005022561D1 true DE602005022561D1 (de) 2010-09-09

Family

ID=34896086

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022561T Active DE602005022561D1 (de) 2004-02-19 2005-02-10 Verfahren zum herstellen eines halbleiterbauelements

Country Status (7)

Country Link
US (1) US20080150024A1 (de)
EP (1) EP1719164B1 (de)
JP (1) JP2007524242A (de)
CN (1) CN1922719B (de)
AT (1) ATE475986T1 (de)
DE (1) DE602005022561D1 (de)
WO (1) WO2005083769A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7569888B2 (en) * 2005-08-10 2009-08-04 Toshiba America Electronic Components, Inc. Semiconductor device with close stress liner film and method of manufacturing the same
JP2008198763A (ja) * 2007-02-13 2008-08-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4503627B2 (ja) * 2007-03-29 2010-07-14 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
DE102008030854B4 (de) 2008-06-30 2014-03-20 Advanced Micro Devices, Inc. MOS-Transistoren mit abgesenkten Drain- und Source-Bereichen und nicht-konformen Metallsilizidgebieten und Verfahren zum Herstellen der Transistoren
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP5659098B2 (ja) * 2011-07-19 2015-01-28 株式会社東芝 半導体装置の製造方法
CN103531468B (zh) * 2012-07-02 2018-05-08 中芯国际集成电路制造(上海)有限公司 一种mos晶体管及其制作方法
US9269626B2 (en) * 2014-02-06 2016-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure and method for manufacturing thereof
CN105633087B (zh) * 2014-11-03 2018-10-12 旺宏电子股份有限公司 半导体元件及其制造方法
US9685535B1 (en) 2016-09-09 2017-06-20 International Business Machines Corporation Conductive contacts in semiconductor on insulator substrate
FR3069376B1 (fr) 2017-07-21 2020-07-03 Stmicroelectronics (Rousset) Sas Transistor comprenant une grille elargie
FR3069374B1 (fr) 2017-07-21 2020-01-17 Stmicroelectronics (Rousset) Sas Transistor mos a effet bosse reduit
FR3069377B1 (fr) 2017-07-21 2020-07-03 Stmicroelectronics (Rousset) Sas Transistor mos a double blocs de grille a tension de claquage augmentee
FR3143839A1 (fr) * 2022-12-20 2024-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Realisation d’un transistor a source et de drain siliciurees proches du canal

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204132B1 (en) * 1998-05-06 2001-03-20 Texas Instruments Incorporated Method of forming a silicide layer using an angled pre-amorphization implant
US6180472B1 (en) * 1998-07-28 2001-01-30 Matsushita Electrons Corporation Method for fabricating semiconductor device
US6242776B1 (en) * 1999-06-02 2001-06-05 Advanced Micro Devices, Inc. Device improvement by lowering LDD resistance with new silicide process
KR100327347B1 (en) * 2000-07-22 2002-03-06 Samsung Electronics Co Ltd Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof
US6380057B1 (en) * 2001-02-13 2002-04-30 Advanced Micro Devices, Inc. Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant
US20020137268A1 (en) * 2001-03-20 2002-09-26 Pellerin John G. Method of forming silicide contacts and device incorporation same
US6441433B1 (en) * 2001-04-02 2002-08-27 Advanced Micro Devices, Inc. Method of making a multi-thickness silicide SOI device
WO2002082503A2 (en) * 2001-04-02 2002-10-17 Advanced Micro Devices, Inc. Multi-thickness silicide device
US6888198B1 (en) * 2001-06-04 2005-05-03 Advanced Micro Devices, Inc. Straddled gate FDSOI device
US6465847B1 (en) * 2001-06-11 2002-10-15 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions
US20040188765A1 (en) * 2003-03-28 2004-09-30 International Business Machines Corporation Cmos device integration for low external resistance
US6946350B2 (en) * 2003-12-31 2005-09-20 Intel Corporation Controlled faceting of source/drain regions

Also Published As

Publication number Publication date
WO2005083769A1 (en) 2005-09-09
CN1922719A (zh) 2007-02-28
EP1719164A1 (de) 2006-11-08
JP2007524242A (ja) 2007-08-23
ATE475986T1 (de) 2010-08-15
CN1922719B (zh) 2011-05-04
US20080150024A1 (en) 2008-06-26
EP1719164B1 (de) 2010-07-28

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