TWI453545B - 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 - Google Patents

微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 Download PDF

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Publication number
TWI453545B
TWI453545B TW098111880A TW98111880A TWI453545B TW I453545 B TWI453545 B TW I453545B TW 098111880 A TW098111880 A TW 098111880A TW 98111880 A TW98111880 A TW 98111880A TW I453545 B TWI453545 B TW I453545B
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TW
Taiwan
Prior art keywords
patterned
cleaning
radiation beam
patterned element
cleaning electrode
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TW098111880A
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English (en)
Chinese (zh)
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TW200949458A (en
Inventor
路奇 史卡巴羅茲
法拉帝莫 維塔拉維屈 依法諾
康士坦汀 尼可拉威屈 卡士李
喬漢斯 哈博特 喬瑟菲那 莫斯
魯卡斯 亨利克斯 瓊斯 史蒂芬斯
帕維 斯丹拉維齊 安特希菲羅夫
法狄米爾 米哈囉維茲 可瑞森
里歐尼得 亞歷山卓維奇 多洛辛
卡潘 馬汀 凡
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Ａｓｍｌ荷蘭公司
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Application filed by Ａｓｍｌ荷蘭公司 filed Critical Ａｓｍｌ荷蘭公司
Publication of TW200949458A publication Critical patent/TW200949458A/zh
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Publication of TWI453545B publication Critical patent/TWI453545B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098111880A 2008-04-23 2009-04-09 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 TWI453545B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7134508P 2008-04-23 2008-04-23

Publications (2)

Publication Number Publication Date
TW200949458A TW200949458A (en) 2009-12-01
TWI453545B true TWI453545B (zh) 2014-09-21

Family

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Family Applications (1)

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TW098111880A TWI453545B (zh) 2008-04-23 2009-04-09 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法

Country Status (7)

Country Link
US (1) US20110037960A1 (https=)
JP (1) JP5535194B2 (https=)
KR (1) KR20110005288A (https=)
CN (1) CN102016723A (https=)
NL (1) NL1036769A1 (https=)
TW (1) TWI453545B (https=)
WO (1) WO2009129960A1 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
US8891080B2 (en) * 2010-07-08 2014-11-18 Canon Nanotechnologies, Inc. Contaminate detection and substrate cleaning
JP5557674B2 (ja) * 2010-09-29 2014-07-23 三菱スペース・ソフトウエア株式会社 スペースデブリ焼滅装置、スペースデブリ焼滅システムおよびスペースデブリ焼滅方法
JP5821397B2 (ja) * 2011-08-16 2015-11-24 富士通セミコンダクター株式会社 極紫外露光マスク用防塵装置及び露光方法
JP5875197B2 (ja) * 2011-09-05 2016-03-02 株式会社東芝 レチクルチャッククリーナー及びレチクルチャッククリーニング方法
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
US9378941B2 (en) * 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
JP2015176934A (ja) * 2014-03-13 2015-10-05 株式会社東芝 静電チャッククリーナ、クリーニング方法、および露光装置
US9539622B2 (en) 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
CN106164776B (zh) * 2014-04-09 2019-04-23 Asml荷兰有限公司 用于清洁对象的装置
NL2015914A (en) * 2014-12-31 2016-09-29 Asml Holding Nv Lithographic apparatus with a patterning device environment
JP6702672B2 (ja) * 2015-09-03 2020-06-03 キヤノン株式会社 インプリント装置、物品の製造方法及び供給装置
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
US11086238B2 (en) * 2017-06-29 2021-08-10 Asml Netherlands B.V. System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support
WO2019042682A1 (en) * 2017-08-28 2019-03-07 Asml Holding N.V. APPARATUS AND METHOD FOR CLEANING A SUPPORT WITHIN A LITHOGRAPHIC APPARATUS
CN111316168B (zh) 2017-10-31 2022-04-01 Asml荷兰有限公司 量测设备、测量结构的方法、器件制造方法
JP7186230B2 (ja) 2017-12-28 2022-12-08 エーエスエムエル ネザーランズ ビー．ブイ． 装置の構成要素から汚染粒子を除去する装置および方法
EP3506011A1 (en) * 2017-12-28 2019-07-03 ASML Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of a metrology apparatus
JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
CN110899246A (zh) * 2018-09-14 2020-03-24 长鑫存储技术有限公司 光罩缺陷的清洁装置及清洁方法
CN111061129B (zh) * 2018-10-17 2022-11-01 台湾积体电路制造股份有限公司 光刻系统及清洁光刻系统的方法
WO2020094388A1 (en) * 2018-11-09 2020-05-14 Asml Holding N.V. Apparatus for and method cleaning a support inside a lithography apparatus
WO2020109152A1 (en) * 2018-11-27 2020-06-04 Asml Netherlands B.V. Membrane cleaning apparatus
KR102714101B1 (ko) 2018-12-10 2024-10-04 어플라이드 머티어리얼스, 인코포레이티드 극자외선 리소그래피 애플리케이션에서 포토마스크로부터의 부착 피처 제거
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
EP3809204A1 (en) * 2019-10-18 2021-04-21 ASML Netherlands B.V. Patterning device conditioning system and method
WO2021073799A1 (en) * 2019-10-18 2021-04-22 Asml Netherlands B.V. Membrane cleaning apparatus
KR102788879B1 (ko) 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
CN115176202A (zh) * 2020-01-23 2022-10-11 Asml控股股份有限公司 配有用于改变颗粒碎片的轨迹的偏转设备的光刻系统
US11681235B2 (en) 2021-03-05 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for cleaning an EUV mask
US12287589B2 (en) 2021-03-26 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for removing contamination
WO2023094084A1 (en) * 2021-11-25 2023-06-01 Asml Netherlands B.V. An optical device, illumination system, projection system, euv radiation source, lithographic apparatus, deposition of contamination preventing method, and optical component refurbishing method
CN117111409A (zh) * 2022-05-16 2023-11-24 成都高真科技有限公司 一种降低掩膜残留物影响的方法及装置
WO2024132381A1 (en) * 2022-12-22 2024-06-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN120958388A (zh) * 2023-04-14 2025-11-14 Asml荷兰有限公司 用于在光刻中使用的静电夹具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
US20060012760A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260245A (ja) * 1996-03-21 1997-10-03 Canon Inc マスクの異物除去装置
JP3644246B2 (ja) * 1998-04-10 2005-04-27 三菱電機株式会社 Ｘ線露光方法
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
US6828569B2 (en) * 2001-11-19 2004-12-07 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
EP1329773A3 (en) * 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
EP1329770A1 (en) * 2002-01-18 2003-07-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100563102B1 (ko) * 2002-09-12 2006-03-27 에이에스엠엘 네델란즈 비.브이. 표면들로부터 입자들을 제거함으로써 세정하는 방법,세정장치 및 리소그래피투영장치
EP1411392B1 (en) * 2002-10-18 2008-09-17 ASML Netherlands B.V. Lithographic projection apparatus
SG115575A1 (en) * 2002-10-18 2005-10-28 Asml Netherlands Bv Lithographic projection apparatus comprising a secondary electron removal unit
JP2006120776A (ja) * 2004-10-20 2006-05-11 Canon Inc 露光装置
JP2006287003A (ja) * 2005-04-01 2006-10-19 Tohoku Univ 露光装置
JP2007329288A (ja) * 2006-06-07 2007-12-20 Canon Inc 露光装置及びデバイス製造方法
US7671347B2 (en) * 2006-10-10 2010-03-02 Asml Netherlands B.V. Cleaning method, apparatus and cleaning system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
US20060012760A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP5535194B2 (ja) 2014-07-02
KR20110005288A (ko) 2011-01-17
CN102016723A (zh) 2011-04-13
NL1036769A1 (nl) 2009-10-26
JP2011519156A (ja) 2011-06-30
TW200949458A (en) 2009-12-01
WO2009129960A1 (en) 2009-10-29
US20110037960A1 (en) 2011-02-17

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