TWI453545B - 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 - Google Patents

微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 Download PDF

Info

Publication number
TWI453545B
TWI453545B TW098111880A TW98111880A TWI453545B TW I453545 B TWI453545 B TW I453545B TW 098111880 A TW098111880 A TW 098111880A TW 98111880 A TW98111880 A TW 98111880A TW I453545 B TWI453545 B TW I453545B
Authority
TW
Taiwan
Prior art keywords
patterned
cleaning
radiation beam
patterned element
cleaning electrode
Prior art date
Application number
TW098111880A
Other languages
English (en)
Chinese (zh)
Other versions
TW200949458A (en
Inventor
路奇 史卡巴羅茲
法拉帝莫 維塔拉維屈 依法諾
康士坦汀 尼可拉威屈 卡士李
喬漢斯 哈博特 喬瑟菲那 莫斯
魯卡斯 亨利克斯 瓊斯 史蒂芬斯
帕維 斯丹拉維齊 安特希菲羅夫
法狄米爾 米哈囉維茲 可瑞森
里歐尼得 亞歷山卓維奇 多洛辛
卡潘 馬汀 凡
Original Assignee
Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｓｍｌ荷蘭公司 filed Critical Ａｓｍｌ荷蘭公司
Publication of TW200949458A publication Critical patent/TW200949458A/zh
Application granted granted Critical
Publication of TWI453545B publication Critical patent/TWI453545B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098111880A 2008-04-23 2009-04-09 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法 TWI453545B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7134508P 2008-04-23 2008-04-23

Publications (2)

Publication Number Publication Date
TW200949458A TW200949458A (en) 2009-12-01
TWI453545B true TWI453545B (zh) 2014-09-21

Family

ID=40810613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098111880A TWI453545B (zh) 2008-04-23 2009-04-09 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法

Country Status (7)

Country Link
US (1) US20110037960A1 (https=)
JP (1) JP5535194B2 (https=)
KR (1) KR20110005288A (https=)
CN (1) CN102016723A (https=)
NL (1) NL1036769A1 (https=)
TW (1) TWI453545B (https=)
WO (1) WO2009129960A1 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
US8891080B2 (en) * 2010-07-08 2014-11-18 Canon Nanotechnologies, Inc. Contaminate detection and substrate cleaning
JP5557674B2 (ja) * 2010-09-29 2014-07-23 三菱スペース・ソフトウエア株式会社 スペースデブリ焼滅装置、スペースデブリ焼滅システムおよびスペースデブリ焼滅方法
JP5821397B2 (ja) * 2011-08-16 2015-11-24 富士通セミコンダクター株式会社 極紫外露光マスク用防塵装置及び露光方法
WO2013035415A1 (ja) * 2011-09-05 2013-03-14 株式会社 東芝 レチクルチャッククリーナー及びレチクルチャッククリーニング方法
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
US9378941B2 (en) * 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
JP2015176934A (ja) * 2014-03-13 2015-10-05 株式会社東芝 静電チャッククリーナ、クリーニング方法、および露光装置
US9539622B2 (en) 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
US10133196B2 (en) * 2014-04-09 2018-11-20 Asml Netherlands B.V. Apparatus for cleaning an object
WO2016107718A1 (en) * 2014-12-31 2016-07-07 Asml Holding N.V. Lithographic apparatus with a patterning device environment
JP6702672B2 (ja) * 2015-09-03 2020-06-03 キヤノン株式会社 インプリント装置、物品の製造方法及び供給装置
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
US11086238B2 (en) * 2017-06-29 2021-08-10 Asml Netherlands B.V. System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support
NL2021410A (en) * 2017-08-28 2019-03-07 Asml Holding Nv Apparatus for and method cleaning a support inside a lithography apparatus
IL273836B2 (en) 2017-10-31 2023-09-01 Asml Netherlands Bv A measuring device, a method for measuring a structure, a method for making a device
EP3506011A1 (en) * 2017-12-28 2019-07-03 ASML Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of a metrology apparatus
WO2019129456A1 (en) 2017-12-28 2019-07-04 Asml Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of an apparatus
JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
CN110899246A (zh) * 2018-09-14 2020-03-24 长鑫存储技术有限公司 光罩缺陷的清洁装置及清洁方法
CN111061129B (zh) * 2018-10-17 2022-11-01 台湾积体电路制造股份有限公司 光刻系统及清洁光刻系统的方法
US11480885B2 (en) * 2018-11-09 2022-10-25 Asml Holding N. V. Apparatus for and method cleaning a support inside a lithography apparatus
CN119493333A (zh) * 2018-11-27 2025-02-21 Asml荷兰有限公司 隔膜清洁设备
WO2020123038A1 (en) 2018-12-10 2020-06-18 Applied Materials, Inc. Attachment feature removal from photomask in extreme ultraviolet lithography application
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
CN114556227A (zh) * 2019-10-18 2022-05-27 Asml荷兰有限公司 隔膜清洁设备
EP3809204A1 (en) * 2019-10-18 2021-04-21 ASML Netherlands B.V. Patterning device conditioning system and method
KR102788879B1 (ko) 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
WO2021148224A1 (en) * 2020-01-23 2021-07-29 Asml Holding N.V. Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris
US11681235B2 (en) 2021-03-05 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for cleaning an EUV mask
US12287589B2 (en) * 2021-03-26 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for removing contamination
CN118265951A (zh) * 2021-11-25 2024-06-28 Asml荷兰有限公司 一种光学装置、照射系统、投影系统、euv辐射源、光刻设备、污染沉积防止方法以及光学部件翻新方法
CN117111409A (zh) * 2022-05-16 2023-11-24 成都高真科技有限公司 一种降低掩膜残留物影响的方法及装置
CN120344912A (zh) * 2022-12-22 2025-07-18 Asml荷兰有限公司 光刻设备和器件制造方法
KR20250174905A (ko) * 2023-04-14 2025-12-15 에이에스엠엘 네델란즈 비.브이. 리소그래피에서 사용하기 위한 정전기 클램프

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
US20060012760A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260245A (ja) * 1996-03-21 1997-10-03 Canon Inc マスクの異物除去装置
JP3644246B2 (ja) * 1998-04-10 2005-04-27 三菱電機株式会社 Ｘ線露光方法
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
US6828569B2 (en) * 2001-11-19 2004-12-07 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
EP1329770A1 (en) * 2002-01-18 2003-07-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1329773A3 (en) * 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
KR100563102B1 (ko) * 2002-09-12 2006-03-27 에이에스엠엘 네델란즈 비.브이. 표면들로부터 입자들을 제거함으로써 세정하는 방법,세정장치 및 리소그래피투영장치
EP1411392B1 (en) * 2002-10-18 2008-09-17 ASML Netherlands B.V. Lithographic projection apparatus
SG115575A1 (en) * 2002-10-18 2005-10-28 Asml Netherlands Bv Lithographic projection apparatus comprising a secondary electron removal unit
JP2006120776A (ja) * 2004-10-20 2006-05-11 Canon Inc 露光装置
JP2006287003A (ja) * 2005-04-01 2006-10-19 Tohoku Univ 露光装置
JP2007329288A (ja) * 2006-06-07 2007-12-20 Canon Inc 露光装置及びデバイス製造方法
US7671347B2 (en) * 2006-10-10 2010-03-02 Asml Netherlands B.V. Cleaning method, apparatus and cleaning system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
US20060012760A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
WO2009129960A1 (en) 2009-10-29
JP2011519156A (ja) 2011-06-30
KR20110005288A (ko) 2011-01-17
TW200949458A (en) 2009-12-01
JP5535194B2 (ja) 2014-07-02
US20110037960A1 (en) 2011-02-17
CN102016723A (zh) 2011-04-13
NL1036769A1 (nl) 2009-10-26

Similar Documents

Publication Publication Date Title
TWI453545B (zh) 微影裝置、元件製造方法、清潔系統及清潔圖案化元件的方法
CN111051986B (zh) 清洁在光刻装置内的支撑件的装置和方法
KR102820966B1 (ko) 리소그래피 장치에서의 인시튜 입자 제거를 위한 장치 및 방법
JP2021121865A (ja) 基板ホルダ及び基板ホルダ製造方法
JP2011519156A5 (https=)
CN1487360A (zh) 夹盘、光刻装置和器件制造方法
CN1683999A (zh) 光刻装置和器件制造方法
JP2015531890A (ja) 粘着性の表面を用いたレチクルクリーニング
KR20150109448A (ko) 정전기 클램프
TW201331721A (zh) 清潔用於固持微影裝置中圖案化器件之支撐件
JP2020522020A (ja) パーティクル除去装置および関連システム
TWI539242B (zh) 微影裝置及元件製造方法
JP4881444B2 (ja) プラズマ放射源、プラズマ放射源を形成する方法、基板上にパターニングデバイスからのパターンを投影するための装置、およびデバイス製造方法
JP5005748B2 (ja) 非接触洗浄のためのシステム、リソグラフィ装置、及びデバイス製造方法
JP2005183973A (ja) リソグラフィ装置、及びデバイス製造方法
KR102922672B1 (ko) 리소그래피 장치에서의 인시튜 입자 제거 장치 및 방법
KR100700369B1 (ko) 리소그래피 장치, 조명시스템 및 ｅｕｖ 방사선의투영빔을 제공하는 방법
JP2026514039A (ja) リソグラフィに使用される静電クランプ、リソグラフィ装置、および、リソグラフィ装置においてコンポーネントをクランプするための静電クランプを制御する方法
KR20250174905A (ko) 리소그래피에서 사용하기 위한 정전기 클램프
NL2009725A (en) Cleaning a support that holds a patterning device inside a lithography apparatus.

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees