KR20110005288A - 리소그래피 장치, 디바이스 제조 방법, 세정 시스템 및 패터닝 디바이스 세정 방법 - Google Patents

리소그래피 장치, 디바이스 제조 방법, 세정 시스템 및 패터닝 디바이스 세정 방법 Download PDF

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Publication number
KR20110005288A
KR20110005288A KR1020107026139A KR20107026139A KR20110005288A KR 20110005288 A KR20110005288 A KR 20110005288A KR 1020107026139 A KR1020107026139 A KR 1020107026139A KR 20107026139 A KR20107026139 A KR 20107026139A KR 20110005288 A KR20110005288 A KR 20110005288A
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KR
South Korea
Prior art keywords
patterning device
cleaning
radiation beam
cleaning electrode
lithographic apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020107026139A
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English (en)
Korean (ko)
Inventor
루이지 스카카바로찌
블라디미르 비탈에비치 이바노프
콘스탄틴 니콜라에비치 코셀레프
요한네스 후베르투스 요제피나 무어스
루카스 헨리쿠스 요한네스 스티븐스
파벨 스타니슬라보비치 안치페로프
블라디미르 미하일로비치 크리브트선
레오니드 알렉산드로비치 도로킨
마르텐 반 캠펜
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20110005288A publication Critical patent/KR20110005288A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107026139A 2008-04-23 2009-04-16 리소그래피 장치, 디바이스 제조 방법, 세정 시스템 및 패터닝 디바이스 세정 방법 Abandoned KR20110005288A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7134508P 2008-04-23 2008-04-23
US61/071,345 2008-04-23

Publications (1)

Publication Number Publication Date
KR20110005288A true KR20110005288A (ko) 2011-01-17

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KR1020107026139A Abandoned KR20110005288A (ko) 2008-04-23 2009-04-16 리소그래피 장치, 디바이스 제조 방법, 세정 시스템 및 패터닝 디바이스 세정 방법

Country Status (7)

Country Link
US (1) US20110037960A1 (https=)
JP (1) JP5535194B2 (https=)
KR (1) KR20110005288A (https=)
CN (1) CN102016723A (https=)
NL (1) NL1036769A1 (https=)
TW (1) TWI453545B (https=)
WO (1) WO2009129960A1 (https=)

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Publication number Priority date Publication date Assignee Title
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
KR20220084044A (ko) * 2019-10-18 2022-06-21 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 조절 시스템 및 방법

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JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
US8891080B2 (en) * 2010-07-08 2014-11-18 Canon Nanotechnologies, Inc. Contaminate detection and substrate cleaning
JP5557674B2 (ja) * 2010-09-29 2014-07-23 三菱スペース・ソフトウエア株式会社 スペースデブリ焼滅装置、スペースデブリ焼滅システムおよびスペースデブリ焼滅方法
JP5821397B2 (ja) * 2011-08-16 2015-11-24 富士通セミコンダクター株式会社 極紫外露光マスク用防塵装置及び露光方法
WO2013035415A1 (ja) * 2011-09-05 2013-03-14 株式会社 東芝 レチクルチャッククリーナー及びレチクルチャッククリーニング方法
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
US9378941B2 (en) * 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
JP2015176934A (ja) * 2014-03-13 2015-10-05 株式会社東芝 静電チャッククリーナ、クリーニング方法、および露光装置
US9539622B2 (en) 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
US10133196B2 (en) * 2014-04-09 2018-11-20 Asml Netherlands B.V. Apparatus for cleaning an object
WO2016107718A1 (en) * 2014-12-31 2016-07-07 Asml Holding N.V. Lithographic apparatus with a patterning device environment
JP6702672B2 (ja) * 2015-09-03 2020-06-03 キヤノン株式会社 インプリント装置、物品の製造方法及び供給装置
US11086238B2 (en) * 2017-06-29 2021-08-10 Asml Netherlands B.V. System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support
NL2021410A (en) * 2017-08-28 2019-03-07 Asml Holding Nv Apparatus for and method cleaning a support inside a lithography apparatus
IL273836B2 (en) 2017-10-31 2023-09-01 Asml Netherlands Bv A measuring device, a method for measuring a structure, a method for making a device
EP3506011A1 (en) * 2017-12-28 2019-07-03 ASML Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of a metrology apparatus
WO2019129456A1 (en) 2017-12-28 2019-07-04 Asml Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of an apparatus
JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
CN110899246A (zh) * 2018-09-14 2020-03-24 长鑫存储技术有限公司 光罩缺陷的清洁装置及清洁方法
CN111061129B (zh) * 2018-10-17 2022-11-01 台湾积体电路制造股份有限公司 光刻系统及清洁光刻系统的方法
US11480885B2 (en) * 2018-11-09 2022-10-25 Asml Holding N. V. Apparatus for and method cleaning a support inside a lithography apparatus
CN119493333A (zh) * 2018-11-27 2025-02-21 Asml荷兰有限公司 隔膜清洁设备
WO2020123038A1 (en) 2018-12-10 2020-06-18 Applied Materials, Inc. Attachment feature removal from photomask in extreme ultraviolet lithography application
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
CN114556227A (zh) * 2019-10-18 2022-05-27 Asml荷兰有限公司 隔膜清洁设备
KR102788879B1 (ko) 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
WO2021148224A1 (en) * 2020-01-23 2021-07-29 Asml Holding N.V. Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris
US11681235B2 (en) 2021-03-05 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for cleaning an EUV mask
US12287589B2 (en) * 2021-03-26 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for removing contamination
CN118265951A (zh) * 2021-11-25 2024-06-28 Asml荷兰有限公司 一种光学装置、照射系统、投影系统、euv辐射源、光刻设备、污染沉积防止方法以及光学部件翻新方法
CN117111409A (zh) * 2022-05-16 2023-11-24 成都高真科技有限公司 一种降低掩膜残留物影响的方法及装置
CN120344912A (zh) * 2022-12-22 2025-07-18 Asml荷兰有限公司 光刻设备和器件制造方法
KR20250174905A (ko) * 2023-04-14 2025-12-15 에이에스엠엘 네델란즈 비.브이. 리소그래피에서 사용하기 위한 정전기 클램프

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JPH09260245A (ja) * 1996-03-21 1997-10-03 Canon Inc マスクの異物除去装置
JP3644246B2 (ja) * 1998-04-10 2005-04-27 三菱電機株式会社 Ｘ線露光方法
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
DE60118669T2 (de) * 2000-08-25 2007-01-11 Asml Netherlands B.V. Lithographischer Projektionsapparat
US6828569B2 (en) * 2001-11-19 2004-12-07 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
EP1329770A1 (en) * 2002-01-18 2003-07-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1329773A3 (en) * 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
KR100563102B1 (ko) * 2002-09-12 2006-03-27 에이에스엠엘 네델란즈 비.브이. 표면들로부터 입자들을 제거함으로써 세정하는 방법,세정장치 및 리소그래피투영장치
EP1411392B1 (en) * 2002-10-18 2008-09-17 ASML Netherlands B.V. Lithographic projection apparatus
SG115575A1 (en) * 2002-10-18 2005-10-28 Asml Netherlands Bv Lithographic projection apparatus comprising a secondary electron removal unit
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
US7248332B2 (en) * 2004-07-13 2007-07-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006120776A (ja) * 2004-10-20 2006-05-11 Canon Inc 露光装置
JP2006287003A (ja) * 2005-04-01 2006-10-19 Tohoku Univ 露光装置
JP2007329288A (ja) * 2006-06-07 2007-12-20 Canon Inc 露光装置及びデバイス製造方法
US7671347B2 (en) * 2006-10-10 2010-03-02 Asml Netherlands B.V. Cleaning method, apparatus and cleaning system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
KR20220084044A (ko) * 2019-10-18 2022-06-21 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 조절 시스템 및 방법

Also Published As

Publication number Publication date
WO2009129960A1 (en) 2009-10-29
JP2011519156A (ja) 2011-06-30
TW200949458A (en) 2009-12-01
TWI453545B (zh) 2014-09-21
JP5535194B2 (ja) 2014-07-02
US20110037960A1 (en) 2011-02-17
CN102016723A (zh) 2011-04-13
NL1036769A1 (nl) 2009-10-26

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