JP5535194B2 - リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 - Google Patents

リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 Download PDF

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JP5535194B2
JP5535194B2 JP2011505407A JP2011505407A JP5535194B2 JP 5535194 B2 JP5535194 B2 JP 5535194B2 JP 2011505407 A JP2011505407 A JP 2011505407A JP 2011505407 A JP2011505407 A JP 2011505407A JP 5535194 B2 JP5535194 B2 JP 5535194B2
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patterning device
radiation beam
lithographic apparatus
cleaning
cleaning electrode
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JP2011505407A
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Japanese (ja)
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JP2011519156A5 (https=
JP2011519156A (ja
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スキャカバロッツィ,ルイージ
イワノフ,ウラジミール,ビターレビッチ
コシェレブ,コンスタンチン,ニコラエビッチ
モールス,ヨハネス,フベルトゥス,ヨセフィナ
スティーブンズ,ルーカス,ヘンリカス,ヨハネス
アンツィフェロブ,パベル,スタニスラボビッチ
クリブツン,ブラディミア,ミハイロビッチ
ドロヒン,レオニード,アレキサンドロビッチ
カンペン,マールテン ヴァン
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エーエスエムエル ネザーランズ ビー.ブイ.
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • H10P76/2042Photolithographic processes using lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011505407A 2008-04-23 2009-04-16 リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 Expired - Fee Related JP5535194B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7134508P 2008-04-23 2008-04-23
US61/071,345 2008-04-23
PCT/EP2009/002782 WO2009129960A1 (en) 2008-04-23 2009-04-16 Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device

Publications (3)

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JP2011519156A JP2011519156A (ja) 2011-06-30
JP2011519156A5 JP2011519156A5 (https=) 2012-06-07
JP5535194B2 true JP5535194B2 (ja) 2014-07-02

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JP2011505407A Expired - Fee Related JP5535194B2 (ja) 2008-04-23 2009-04-16 リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法

Country Status (7)

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US (1) US20110037960A1 (https=)
JP (1) JP5535194B2 (https=)
KR (1) KR20110005288A (https=)
CN (1) CN102016723A (https=)
NL (1) NL1036769A1 (https=)
TW (1) TWI453545B (https=)
WO (1) WO2009129960A1 (https=)

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US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
US9378941B2 (en) * 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
JP2015176934A (ja) * 2014-03-13 2015-10-05 株式会社東芝 静電チャッククリーナ、クリーニング方法、および露光装置
US9539622B2 (en) 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
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WO2016107718A1 (en) * 2014-12-31 2016-07-07 Asml Holding N.V. Lithographic apparatus with a patterning device environment
JP6702672B2 (ja) * 2015-09-03 2020-06-03 キヤノン株式会社 インプリント装置、物品の製造方法及び供給装置
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
US11086238B2 (en) * 2017-06-29 2021-08-10 Asml Netherlands B.V. System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support
NL2021410A (en) * 2017-08-28 2019-03-07 Asml Holding Nv Apparatus for and method cleaning a support inside a lithography apparatus
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EP3506011A1 (en) * 2017-12-28 2019-07-03 ASML Netherlands B.V. Apparatus for and a method of removing contaminant particles from a component of a metrology apparatus
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JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
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CN111061129B (zh) * 2018-10-17 2022-11-01 台湾积体电路制造股份有限公司 光刻系统及清洁光刻系统的方法
US11480885B2 (en) * 2018-11-09 2022-10-25 Asml Holding N. V. Apparatus for and method cleaning a support inside a lithography apparatus
CN119493333A (zh) * 2018-11-27 2025-02-21 Asml荷兰有限公司 隔膜清洁设备
WO2020123038A1 (en) 2018-12-10 2020-06-18 Applied Materials, Inc. Attachment feature removal from photomask in extreme ultraviolet lithography application
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
CN114556227A (zh) * 2019-10-18 2022-05-27 Asml荷兰有限公司 隔膜清洁设备
EP3809204A1 (en) * 2019-10-18 2021-04-21 ASML Netherlands B.V. Patterning device conditioning system and method
KR102788879B1 (ko) 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
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Publication number Publication date
WO2009129960A1 (en) 2009-10-29
JP2011519156A (ja) 2011-06-30
KR20110005288A (ko) 2011-01-17
TW200949458A (en) 2009-12-01
TWI453545B (zh) 2014-09-21
US20110037960A1 (en) 2011-02-17
CN102016723A (zh) 2011-04-13
NL1036769A1 (nl) 2009-10-26

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