TWI452418B - 用於ｅｕｖ微影術之反射類型空白遮光罩 - Google Patents

用於ｅｕｖ微影術之反射類型空白遮光罩 Download PDF

Info

Publication number
TWI452418B
TWI452418B TW96101310A TW96101310A TWI452418B TW I452418 B TWI452418 B TW I452418B TW 96101310 A TW96101310 A TW 96101310A TW 96101310 A TW96101310 A TW 96101310A TW I452418 B TWI452418 B TW I452418B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
reflective
reflective layer
clamping
Prior art date
Application number
TW96101310A
Other languages
English (en)
Chinese (zh)
Other versions
TW200741332A (en
Inventor
生田順亮
宇野俊之
海老原健
Original Assignee
旭硝子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子股份有限公司 filed Critical 旭硝子股份有限公司
Publication of TW200741332A publication Critical patent/TW200741332A/zh
Application granted granted Critical
Publication of TWI452418B publication Critical patent/TWI452418B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31616—Next to polyester [e.g., alkyd]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW96101310A 2006-01-12 2007-01-12 用於ｅｕｖ微影術之反射類型空白遮光罩 TWI452418B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/330,205 US7678511B2 (en) 2006-01-12 2006-01-12 Reflective-type mask blank for EUV lithography

Publications (2)

Publication Number Publication Date
TW200741332A TW200741332A (en) 2007-11-01
TWI452418B true TWI452418B (zh) 2014-09-11

Family

ID=37891724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96101310A TWI452418B (zh) 2006-01-12 2007-01-12 用於ｅｕｖ微影術之反射類型空白遮光罩

Country Status (7)

Country Link
US (2) US7678511B2 (enExample)
EP (3) EP2278395A1 (enExample)
JP (2) JP4862892B2 (enExample)
KR (1) KR101287697B1 (enExample)
AT (1) ATE533084T1 (enExample)
TW (1) TWI452418B (enExample)
WO (1) WO2007081059A2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1962326B1 (en) * 2005-12-12 2012-06-06 Asahi Glass Company, Limited Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank
JP4532533B2 (ja) * 2007-09-18 2010-08-25 アドバンスド・マスク・インスペクション・テクノロジー株式会社 Ｅｕｖ露光用マスクブランクおよびｅｕｖ露光用マスク
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
WO2009116348A1 (ja) * 2008-03-18 2009-09-24 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
CN102124542B (zh) * 2008-09-05 2013-04-17 旭硝子株式会社 Euv光刻用反射型掩模底板及其制造方法
JP5699938B2 (ja) * 2009-12-09 2015-04-15 旭硝子株式会社 Ｅｕｖリソグラフィ用多層膜ミラーおよびその製造方法
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
JP5560776B2 (ja) * 2010-03-03 2014-07-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
DE112012000658T5 (de) 2011-02-04 2013-11-07 Asahi Glass Company, Limited Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie
JP5950535B2 (ja) * 2011-10-25 2016-07-13 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
CN103858209B (zh) 2011-09-28 2017-06-06 凸版印刷株式会社 反射型曝光用掩模坯及反射型曝光用掩模
EP2581789B1 (en) * 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
JP6157874B2 (ja) * 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
KR20140016662A (ko) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 극자외선 리소그래피용 마스크 및 그 제조방법, 마스크 정렬도 에러 보정방법
US9377679B2 (en) 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
JPWO2014050891A1 (ja) 2012-09-28 2016-08-22 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
US9664997B2 (en) * 2012-11-08 2017-05-30 Hoya Corporation Method of manufacturing mask blank and method of manufacturing transfer mask
JP5753324B2 (ja) * 2012-11-20 2015-07-22 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
SG10201805079YA (en) * 2013-09-27 2018-07-30 Hoya Corp Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method
JP6647198B2 (ja) * 2013-12-22 2020-02-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャックアセンブリを有する極端紫外線リソグラフィーシステム及びその製造方法
JP2016122751A (ja) * 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
KR102501192B1 (ko) * 2016-04-25 2023-02-21 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피를 위한 멤브레인
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP6904234B2 (ja) * 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
TWI786243B (zh) * 2017-12-27 2022-12-11 日商Ｈｏｙａ股份有限公司 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法
US11448955B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11119398B2 (en) * 2018-09-28 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks
SG11202104920UA (en) * 2018-11-15 2021-06-29 Toppan Printing Co Ltd Reflective photomask blank and reflective photomask
KR102798354B1 (ko) * 2019-01-14 2025-04-23 삼성전자주식회사 포토 마스크, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP7689790B2 (ja) * 2019-09-02 2025-06-09 Hoya株式会社 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
US11506969B2 (en) 2020-05-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
CN113253563B (zh) 2020-05-26 2024-12-27 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
JP7623156B2 (ja) * 2021-02-17 2025-01-28 エア・ウォーター株式会社 ペリクルおよびペリクルの製造方法
KR102801300B1 (ko) * 2023-03-17 2025-04-30 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW578034B (en) * 2001-09-28 2004-03-01 Hoya Corp Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
US20040067420A1 (en) * 2001-04-03 2004-04-08 Nikon Corporation Reduced-stress, electrostatically chuckable reticles for use in extreme ultraviolet and soft X-ray microlithography apparatus and methods
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
TW200527122A (en) * 2003-10-24 2005-08-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6098408A (en) 1998-11-11 2000-08-08 Advanced Micro Devices System for controlling reflection reticle temperature in microlithography
JP2000208594A (ja) 1999-01-08 2000-07-28 Nissin Electric Co Ltd ガラス基板の吸着保持方法
KR100805360B1 (ko) 1999-06-07 2008-02-20 더 리전트 오브 더 유니버시티 오브 캘리포니아 코팅층을 갖는 반사 마스크 기판
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6737201B2 (en) 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP4390418B2 (ja) 2001-02-14 2009-12-24 Ｈｏｙａ株式会社 Ｅｕｖ露光用反射型マスクブランクおよびｅｕｖ露光用反射型マスク並びに半導体の製造方法
DE10206143B4 (de) 2001-02-14 2006-11-16 Hoya Corp. Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10255605B4 (de) 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
CN1983028B (zh) * 2003-09-29 2012-07-25 Hoya株式会社 掩膜坯及变换掩膜的制造方法
US6984475B1 (en) 2003-11-03 2006-01-10 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
JP2005210093A (ja) 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US7230695B2 (en) 2004-07-08 2007-06-12 Asahi Glass Company, Ltd. Defect repair device and defect repair method
JP2006267595A (ja) * 2005-03-24 2006-10-05 Toshiba Corp マスクブランクスとその製造方法及び使用方法、並びにマスクとその製造方法及び使用方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067420A1 (en) * 2001-04-03 2004-04-08 Nikon Corporation Reduced-stress, electrostatically chuckable reticles for use in extreme ultraviolet and soft X-ray microlithography apparatus and methods
TW578034B (en) * 2001-09-28 2004-03-01 Hoya Corp Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
TW200527122A (en) * 2003-10-24 2005-08-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method

Also Published As

Publication number Publication date
EP1971898B1 (en) 2011-11-09
EP1971898A2 (en) 2008-09-24
TW200741332A (en) 2007-11-01
KR20080092363A (ko) 2008-10-15
JP4862970B2 (ja) 2012-01-25
US20070160916A1 (en) 2007-07-12
KR101287697B1 (ko) 2013-07-24
JP4862892B2 (ja) 2012-01-25
JP2011228744A (ja) 2011-11-10
EP2278394A1 (en) 2011-01-26
US20100167187A1 (en) 2010-07-01
WO2007081059A2 (en) 2007-07-19
US7960077B2 (en) 2011-06-14
WO2007081059A3 (en) 2007-11-08
JP2009523311A (ja) 2009-06-18
US7678511B2 (en) 2010-03-16
ATE533084T1 (de) 2011-11-15
EP2278395A1 (en) 2011-01-26

Similar Documents

Publication Publication Date Title
US7678511B2 (en) Reflective-type mask blank for EUV lithography
KR102407902B1 (ko) Euv 리소그래피용 반사형 마스크 블랭크, 그 마스크 블랭크용 기능막이 형성된 기판 및 그들의 제조 방법
JP5268168B2 (ja) 多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法
TWI434131B (zh) Reflective mask base for EUV microfilm
CN102292807A (zh) Euv光刻用反射型掩模基板的制造方法
JP2005210093A (ja) 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
KR20150037918A (ko) 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크의 제조방법, 그리고 반도체 장치의 제조방법
TW202248743A (zh) 反射型空白遮罩及反射型遮罩之製造方法
KR102855881B1 (ko) 도전막을 구비하는 기판 및 반사형 마스크 블랭크
KR102688865B1 (ko) 반사형 마스크 블랭크용 막 부가 기판, 반사형 마스크 블랭크, 및 반사형 마스크의 제조 방법
JP2021039335A (ja) 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
JP2013004621A (ja) ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
US7547505B2 (en) Methods of forming capping layers on reflective materials
CN117631434A (zh) 反射型掩模坯料及反射型掩模的制造方法
JP5772499B2 (ja) Ｅｕｖリソグラフィ（ｅｕｖｌ）用反射型マスクブランクの製造方法およびｅｕｖｌ用反射層付基板の製造方法