TWI452418B - 用於ｅｕｖ微影術之反射類型空白遮光罩 - Google Patents
用於ｅｕｖ微影術之反射類型空白遮光罩 Download PDFInfo
- Publication number
- TWI452418B TWI452418B TW96101310A TW96101310A TWI452418B TW I452418 B TWI452418 B TW I452418B TW 96101310 A TW96101310 A TW 96101310A TW 96101310 A TW96101310 A TW 96101310A TW I452418 B TWI452418 B TW I452418B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- reflective
- reflective layer
- clamping
- Prior art date
Links
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 413
- 238000000151 deposition Methods 0.000 claims description 86
- 230000008021 deposition Effects 0.000 claims description 47
- 239000011521 glass Substances 0.000 claims description 25
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 47
- 230000015572 biosynthetic process Effects 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 538
- 238000000034 method Methods 0.000 description 77
- 238000004544 sputter deposition Methods 0.000 description 22
- 230000007547 defect Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- 238000001659 ion-beam spectroscopy Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31616—Next to polyester [e.g., alkyd]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/330,205 US7678511B2 (en) | 2006-01-12 | 2006-01-12 | Reflective-type mask blank for EUV lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200741332A TW200741332A (en) | 2007-11-01 |
| TWI452418B true TWI452418B (zh) | 2014-09-11 |
Family
ID=37891724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96101310A TWI452418B (zh) | 2006-01-12 | 2007-01-12 | 用於ｅｕｖ微影術之反射類型空白遮光罩 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7678511B2 (enExample) |
| EP (3) | EP2278395A1 (enExample) |
| JP (2) | JP4862892B2 (enExample) |
| KR (1) | KR101287697B1 (enExample) |
| AT (1) | ATE533084T1 (enExample) |
| TW (1) | TWI452418B (enExample) |
| WO (1) | WO2007081059A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1962326B1 (en) * | 2005-12-12 | 2012-06-06 | Asahi Glass Company, Limited | Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank |
| JP4532533B2 (ja) * | 2007-09-18 | 2010-08-25 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | Ｅｕｖ露光用マスクブランクおよびｅｕｖ露光用マスク |
| JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
| WO2009116348A1 (ja) * | 2008-03-18 | 2009-09-24 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP2010135732A (ja) * | 2008-08-01 | 2010-06-17 | Asahi Glass Co Ltd | Ｅｕｖマスクブランクス用基板 |
| KR20110065439A (ko) * | 2008-09-05 | 2011-06-15 | 아사히 가라스 가부시키가이샤 | Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법 |
| EP2511945A4 (en) * | 2009-12-09 | 2014-09-03 | Asahi Glass Co Ltd | MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF |
| JP5590113B2 (ja) | 2010-03-02 | 2014-09-17 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法 |
| JP5560776B2 (ja) * | 2010-03-03 | 2014-07-30 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法 |
| DE102011079933A1 (de) * | 2010-08-19 | 2012-02-23 | Carl Zeiss Smt Gmbh | Optisches Element für die UV- oder EUV-Lithographie |
| WO2012105698A1 (ja) | 2011-02-04 | 2012-08-09 | 旭硝子株式会社 | 導電膜付基板、多層反射膜付基板、およびｅｕｖリソグラフィ用反射型マスクブランク |
| JP5950535B2 (ja) * | 2011-10-25 | 2016-07-13 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
| CN103858209B (zh) * | 2011-09-28 | 2017-06-06 | 凸版印刷株式会社 | 反射型曝光用掩模坯及反射型曝光用掩模 |
| EP2581789B1 (en) * | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| JP6157874B2 (ja) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法 |
| KR20140016662A (ko) | 2012-07-30 | 2014-02-10 | 에스케이하이닉스 주식회사 | 극자외선 리소그래피용 마스크 및 그 제조방법, 마스크 정렬도 에러 보정방법 |
| WO2014021235A1 (ja) * | 2012-07-31 | 2014-02-06 | Hoya株式会社 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| WO2014050891A1 (ja) | 2012-09-28 | 2014-04-03 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法 |
| US9664997B2 (en) * | 2012-11-08 | 2017-05-30 | Hoya Corporation | Method of manufacturing mask blank and method of manufacturing transfer mask |
| KR102205778B1 (ko) * | 2012-11-20 | 2021-01-21 | 호야 가부시키가이샤 | 마스크 블랭크, 전사용 마스크, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법 |
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- 2007-01-12 WO PCT/JP2007/050845 patent/WO2007081059A2/en not_active Ceased
- 2007-01-12 KR KR1020087016849A patent/KR101287697B1/ko active Active
- 2007-01-12 EP EP07707133A patent/EP1971898B1/en active Active
- 2007-01-12 EP EP20100014668 patent/EP2278394A1/en not_active Withdrawn
- 2007-01-12 JP JP2008518548A patent/JP4862892B2/ja not_active Expired - Fee Related
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2010
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2278394A1 (en) | 2011-01-26 |
| JP4862892B2 (ja) | 2012-01-25 |
| WO2007081059A2 (en) | 2007-07-19 |
| ATE533084T1 (de) | 2011-11-15 |
| US20100167187A1 (en) | 2010-07-01 |
| US7960077B2 (en) | 2011-06-14 |
| JP2009523311A (ja) | 2009-06-18 |
| US7678511B2 (en) | 2010-03-16 |
| WO2007081059A3 (en) | 2007-11-08 |
| EP1971898A2 (en) | 2008-09-24 |
| KR101287697B1 (ko) | 2013-07-24 |
| EP1971898B1 (en) | 2011-11-09 |
| EP2278395A1 (en) | 2011-01-26 |
| JP2011228744A (ja) | 2011-11-10 |
| US20070160916A1 (en) | 2007-07-12 |
| TW200741332A (en) | 2007-11-01 |
| JP4862970B2 (ja) | 2012-01-25 |
| KR20080092363A (ko) | 2008-10-15 |
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