TWI447916B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

Info

Publication number
TWI447916B
TWI447916B TW098126268A TW98126268A TWI447916B TW I447916 B TWI447916 B TW I447916B TW 098126268 A TW098126268 A TW 098126268A TW 98126268 A TW98126268 A TW 98126268A TW I447916 B TWI447916 B TW I447916B
Authority
TW
Taiwan
Prior art keywords
electrode
insulating film
semiconductor film
ohmic contact
film
Prior art date
Application number
TW098126268A
Other languages
English (en)
Chinese (zh)
Other versions
TW201007951A (en
Inventor
海東拓生
宮澤敏夫
境武志
Original Assignee
日本顯示器股份有限公司
松下液晶顯示器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本顯示器股份有限公司, 松下液晶顯示器股份有限公司 filed Critical 日本顯示器股份有限公司
Publication of TW201007951A publication Critical patent/TW201007951A/zh
Application granted granted Critical
Publication of TWI447916B publication Critical patent/TWI447916B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
TW098126268A 2008-08-07 2009-08-04 顯示裝置 TWI447916B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008204903A JP5442228B2 (ja) 2008-08-07 2008-08-07 表示装置及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
TW201007951A TW201007951A (en) 2010-02-16
TWI447916B true TWI447916B (zh) 2014-08-01

Family

ID=41652054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098126268A TWI447916B (zh) 2008-08-07 2009-08-04 顯示裝置

Country Status (5)

Country Link
US (1) US8310611B2 (enExample)
JP (1) JP5442228B2 (enExample)
KR (1) KR101051594B1 (enExample)
CN (1) CN101644862B (enExample)
TW (1) TWI447916B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101561604B (zh) * 2008-04-17 2011-07-06 北京京东方光电科技有限公司 薄膜晶体管液晶显示器阵列基板结构及制造方法
JP5888802B2 (ja) * 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
JP5421357B2 (ja) * 2010-05-11 2014-02-19 パナソニック株式会社 表示装置用薄膜半導体装置及びその製造方法
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
JP2012079998A (ja) * 2010-10-05 2012-04-19 Hitachi Displays Ltd 液晶表示装置
JP2013055080A (ja) * 2011-08-31 2013-03-21 Japan Display East Co Ltd 表示装置および表示装置の製造方法
KR102230619B1 (ko) * 2014-07-25 2021-03-24 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
CN105895534B (zh) * 2016-06-15 2018-10-19 武汉华星光电技术有限公司 薄膜晶体管的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504348A (en) * 1992-08-13 1996-04-02 Casio Computer Co., Ltd. Thin-film transistor array and liquid crystal display device using the thin-film transistor array
US5798744A (en) * 1994-07-29 1998-08-25 Hitachi, Ltd. Liquid crystal display apparatus
US20060152644A1 (en) * 2005-01-07 2006-07-13 Samsung Electronics Co., Ltd. Thin film transistor array panel

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2814319B2 (ja) 1991-08-29 1998-10-22 株式会社日立製作所 液晶表示装置及びその製造方法
JP3071964B2 (ja) * 1992-10-09 2000-07-31 富士通株式会社 液晶表示装置の製造方法
JPH0818057A (ja) * 1994-06-27 1996-01-19 Sony Corp 電界効果トランジスタの製造方法
JPH09203908A (ja) * 1996-01-25 1997-08-05 Furontetsuku:Kk 液晶表示装置用薄膜トランジスタおよび液晶表示装置
JP2001127302A (ja) * 1999-10-28 2001-05-11 Hitachi Ltd 半導体薄膜基板、半導体装置、半導体装置の製造方法および電子装置
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003158133A (ja) * 2001-11-21 2003-05-30 Fujitsu Display Technologies Corp 薄膜トランジスタ装置及びその製造方法
KR100984362B1 (ko) * 2004-04-02 2010-09-30 삼성전자주식회사 유기 발광 표시판
KR100584716B1 (ko) * 2004-04-06 2006-05-29 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR101118077B1 (ko) * 2005-04-07 2012-03-07 엘지디스플레이 주식회사 액정표시장치 및 이의 제조방법
JP2006080573A (ja) * 2005-12-02 2006-03-23 Mitsubishi Electric Corp アクティブマトリクス基板の製法
JP4395659B2 (ja) * 2005-12-20 2010-01-13 株式会社フューチャービジョン 液晶表示装置とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504348A (en) * 1992-08-13 1996-04-02 Casio Computer Co., Ltd. Thin-film transistor array and liquid crystal display device using the thin-film transistor array
US5798744A (en) * 1994-07-29 1998-08-25 Hitachi, Ltd. Liquid crystal display apparatus
US20060152644A1 (en) * 2005-01-07 2006-07-13 Samsung Electronics Co., Ltd. Thin film transistor array panel

Also Published As

Publication number Publication date
KR20100019339A (ko) 2010-02-18
US8310611B2 (en) 2012-11-13
JP2010040951A (ja) 2010-02-18
US20100032680A1 (en) 2010-02-11
JP5442228B2 (ja) 2014-03-12
TW201007951A (en) 2010-02-16
CN101644862B (zh) 2012-04-04
CN101644862A (zh) 2010-02-10
KR101051594B1 (ko) 2011-07-22

Similar Documents

Publication Publication Date Title
JP5323604B2 (ja) 表示装置及びその製造方法
TWI447916B (zh) 顯示裝置
US8309960B2 (en) Display device
US9023685B2 (en) Semiconductor device, fabrication method for the same, and display apparatus
JP5384088B2 (ja) 表示装置
WO2016175086A1 (ja) 半導体装置及びその製造方法
US8129724B2 (en) Display device including first, second, and third semiconductor films
US8058654B2 (en) Display device and manufacturing method thereof
JP2010039393A (ja) 表示装置及び表示装置の製造方法
JP2005317851A (ja) 薄膜トランジスタおよびその製造方法
JPH06169086A (ja) 多結晶シリコン薄膜トランジスタ
JP2010039394A (ja) 表示装置及び表示装置の製造方法
US20120104406A1 (en) Thin-film transistor, display device, and manufacturing method for thin-film transistors
US20090218574A1 (en) Display device and manufacturing method therefor
CN100523966C (zh) 显示装置及其制造方法
JP2008153416A (ja) 表示装置とその製造方法
JP2008165028A (ja) 液晶表示装置
JP2010205850A (ja) 表示装置
US8319225B2 (en) Display device and manufacturing method thereof
JP5312906B2 (ja) 表示装置
JP2009210681A (ja) 表示装置及びその製造方法
KR20080047773A (ko) 폴리실리콘 박막 트랜지스터 기판 및 그 제조 방법
JPH10135474A (ja) 絶縁ゲイト型電界効果トランジスタ及びその作製方法
JP2010182882A (ja) 表示装置及び表示装置の製造方法
KR20080039194A (ko) 박막 트랜지스터 및 그 제조 방법과, 그를 이용한 액정표시 장치 및 유기 발광 다이오드 표시 장치