TWI446421B - 多層膜的製造方法 - Google Patents
多層膜的製造方法 Download PDFInfo
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Description
本發明是關於一種具有設置於支持膜上的多個接著膜之多層膜,進而是關於一種具有設置於支持膜上的多個接著膜及黏著膜之多層膜的製造方法。
具有形成於支持膜上的多個接著膜及黏著膜的多層膜,例如有於支持膜上形成有晶粒(die)接合用接著劑層及切割(dicing)用黏著劑層的晶粒接合切割一體型膜。
此種多層膜,例如可藉由以下方法來製造:以接著劑層及黏著劑層置於內側,將晶粒接合膜與切割膜加以貼合;此晶粒接合膜具有支持膜及空出規定的間隔而形成於此支持膜上的接著劑層,此切割膜具有基材膜及形成於此基材膜上的黏著劑層(專利文獻1)。
專利文獻1:日本專利特開2004-221336號公報
空出規定的間隔而配置之多個接著劑層,能夠藉由以下方法來形成:暫時形成整個覆蓋支持膜的一面的接著劑層,然後保留其一部分而去除不要部分;就生產效率等方面而言,在工業上較好的是採用此種方法。
但是,當以先前方法製造多層膜時,必須在最終產品中空出必要的間隔而於支持膜上形成接著膜,因此存在著接著劑層中作為不要部分而被廢棄的部分的量會變多的問題。特別是,當使用晶粒接合用的接著膜之類的高價材料時,工業上強烈要求儘可能減少作為不要部分而廢棄的部
分的量。
另外,當以習知方法製造多層膜時,因必須在支持膜上切割該接著膜,故存在切割該接著膜時會在支持膜表面上沿著接著膜的外周而產生切割傷痕的問題。若存在切割傷痕,則膜塵等異物容易附著於此部分上,因而業者強烈期望抑制切割傷痕的產生。
因此,本發明之目的在於提供一種多層膜的製造方法,此方法能夠在製造具有設置於支持膜上的多個接著膜的多層膜時,以與最終產品中的間隔不同而任意設定的間隔、或者不空出間隔,以有效地形成多個接著膜,並抑制支持膜表面上的切割傷痕的產生。
本發明是關於一種具備支持膜、及沿支持膜的長度方向而配置於支持膜上的多個接著膜之多層膜的製造方法。本發明之製造方法包括下列步驟:將形成於臨時基材上的接著劑層加以切割,以將其區分為沿臨時基材的長度方向空出規定的間隔或者不空出間隔而加以配置並用作接著膜的多個部分及此多個部份以外的部分之步驟(A);及沿支持膜的長度方向空出規定的間隔而使臨時基材上的接著膜移動至支持膜上步驟(B)。沿臨時基材的長度方向空出規定的間隔而配置用作接著膜的多個部分時,臨時基材上相鄰的接著膜的間隔,與支持膜上相鄰的接著膜的間隔不同。
上述本發明之製造方法中,將構成多層膜的多個接著膜暫時形成於臨時基材上,然後使所形成的接著膜移動至
支持膜上。因此,能夠以與最終產品中的間隔不同而任意設定的間隔、或者以不空出間隔而配置之方式,來形成接著膜。
另外,本發明之製造方法中,於臨時基材上切割接著劑層,再將所形成的接著膜移動至支持膜上,因此可抑制支持膜表面上的切割傷痕的產生。
本發明之製造方法,於步驟(A)與步驟(B)之間,亦可進一步包括步驟(C):將臨時基材上的接著劑層中除接著膜以外的部分的一部分或全部去除,而將接著膜保留於臨時基材上。藉此,可更容易地使臨時基材上的接著膜移動至支持膜上。
在沿臨時基材的長度方向空出規定的間隔而配置用作接著膜的多個部分時,較好的是,臨時基材上相鄰的接著膜之間隔小於支持膜上相鄰的接著膜之間隔。此時,於最終產品中,以小於必要間隔的間隔而高密度配置之方式,於臨時基材上形成接著膜。其結果,作為不要部分而去除之接著劑層的量減少。
上述多層膜,亦可進一步具備設置於接著膜上且具有從接著膜的外周突出的突出部之黏著膜。此時,本發明之製造方法較佳是進一步包括:將接著膜與黏著劑層加以貼合的步驟(a);將接著膜上的黏著劑層加以切割,以將其區分為用作黏著膜的多個部分及其以外的部分之步驟(b);及將黏著劑層中除黏著膜以外的部分的一部分或全部去除,而將黏著膜保留於接著膜上之步驟(c)。
例如,亦可藉由貼合該接著膜與黏著劑層,而沿黏著劑層的長度方向,空出與臨時基材上相鄰的接著膜的間隔不同之規定間隔,使臨時基材上的多個接著膜移動至黏著劑層上,隨後,藉由貼合黏著劑層上的接著膜與支持膜,而以將多個接著膜貼合於黏著劑層上之狀態,沿支持膜的長度方向空出規定的間隔使其移動至支持膜上。此時,步驟(a)包含於步驟(B)中,步驟(b)及(c)則成為步驟(B)的後續步驟。另外,例如亦可將步驟(B)中移動至支持膜上的接著膜,以貼合於支持膜上之狀態,貼合於黏著劑層上。此時,步驟(a)、(b)及(c)成為步驟(B)的後續步驟。
在具有上述黏著膜的多層膜之情況下,為了確保黏著膜的突出部的空間,必須擴大接著膜彼此之間的間隔,但即使在這種情況下,根據本發明亦可將作為不要部分而去除之接著劑層的量維持於少量。
於步驟(c)中,較好的是,將黏著劑層加以切割,以將其區分為用作黏著膜的多個部分與圍繞該各個部分的部分及這些以外的部分,再將黏著劑層中圍繞多個各黏著膜的部分去除,而將黏著膜保留於接著膜上。此時,於所獲得之多層膜中,將支持膜露出的部分形成於黏著膜的周圍。藉此,在使用具有接著膜及黏著膜的積層體時,容易自支持膜上剝離等,從而改善多層膜的操作性。
於本發明之製造方法中,例如,接著膜為晶粒接合用接著膜,黏著膜亦可為切割用的黏著膜。
本發明之製造方法,亦可進一步包括檢查臨時基材上的接著膜的外觀之步驟。此時,例如,於臨時基材上的多個接著膜中,僅使藉由檢查接著膜外觀的步驟而判定為優良品者移動至支持膜上,藉此可防止不良品混入最終產品中。
根據本發明,於製造具有設置於支持膜上的多個接著膜之多層膜時,能夠以與最終產品中的間隔不同而任意設定的間隔、或者不空出間隔,而有效地形成多個接著膜。
其結果,例如能夠減少作為不要部分而去除之接著劑層的量,從而謀求減少廢棄物或降低製造成本。另外,根據本發明,能夠抑制支持膜表面上的切割傷痕的發生以及由此造成的膜塵等異物的殘留。
以下,根據需要參照圖式就本發明之較佳實施形態加以詳細說明。圖中,對於相同或同等的構成要素標記相同符號,並適當省略重複的說明。
圖1是表示多層膜的一實施形態的平面圖,圖2是沿圖1的Ⅱ-Ⅱ線的端面圖。圖1、2中所示的多層膜1,是由長的支持膜10、具有圓形主面的多個接著膜21a、積層於多個接著膜21a各自的與支持膜10為相反側的面上之黏著膜22a、及覆蓋黏著膜22a的基礎膜12a所構成。
沿支持膜10的長度方向空出規定的間隔D2,而將接著膜21a配置於支持膜10上。接著膜21a是用以將半導體
元件接著於半導體元件搭載用基板上的晶粒接合用的接著膜。黏著膜22a及基礎膜12a,具有面積大於接著膜21a的主面之面積的圓形主面,黏著膜22a具有自接著膜21a主面的外周突出的環狀突出部22A。黏著膜22a是藉由切割而使半導體晶圓單片化時用以固定半導體晶圓的切割用的黏著膜。
將具有依序積層有接著膜21a、黏著膜22a及基礎膜12a的積層結構之積層體3自支持膜10上剝離,而用作兼具晶粒接合及切割兩功能的晶粒接合切割一體型膜。為了易於剝離積層體3,而於積層體3的周圍設置有支持膜10露出而形成的環狀露出部90。於露出部90的更外側部分的支持膜10上,積層有黏著劑層的一部分22b及基礎膜12b。另外,圖中為了簡化,而以黏著膜22a的突出部22A成為與支持膜10分離之狀態來表示,但突出部22A通常亦呈現部分性地與支持膜10相接觸之狀態。
圖3是表示使用積層體3(晶粒接合切割一體型膜)來切割半導體晶圓之步驟的一實施形態的端面圖。接著膜21a貼附於半導體晶圓5上,同時黏著膜22a之突出部22A貼附於圍繞半導體晶圓5周圍而設置的環狀框架7上。利用突出部22A的黏著力,將晶粒接合切割一體型膜3固定於環狀框架7上。以此狀態,將半導體晶圓5與接著膜21a同時沿圖中的虛線A切割成格子狀。切割後,根據需要而利用光照射以使黏著膜22a的黏著力減少,將經單片化的半導體晶圓(半導體晶片)與貼附於其單面上的接著膜21a
一同拾取。經由接著膜21a將所拾取的半導體晶片接著於半導體搭載用基板上。
圖4及圖5是表示多層膜1之製造方法的一實施形態的模式圖。圖4所表示實施形態之製造方法,包括下列步驟:將覆蓋臨時基材11的整個單面而形成的接著劑層21加以切割,以將其區分為沿臨時基材11的長度方向空出規定的間隔D1而配置的用作接著膜21a的多個部分及其以外的部分之步驟;將臨時基材11上的接著劑層21中除接著膜21a以外的部分去除之步驟;沿黏著劑層22的長度方向空出間隔D2而使臨時基材11上的接著膜21a移動至黏著劑層22上之步驟;以及將支持膜10貼合於移動至黏著劑層22上的接著膜21a上之步驟。臨時基材11上相鄰的接著膜21a的間隔D1小於支持膜10上相鄰的接著膜21a的間隔D2。圖5所示的實施形態之製造方法,進一步包括下列步驟:將接著膜21a上的黏著劑層22及基礎膜12加以切割,以將黏著劑層22區分為用作黏著膜22a的多個部分及圍繞該各個部分的環狀部分22c及這些以外的部分之步驟;以及將黏著劑層22中的環狀部分22c與此環狀部分22c上的部分基礎膜12c同時去除之步驟。
接著劑層21,例如是藉由以下方法而形成於臨時基材11上:將含有接著劑與溶解或分散有此接著劑的溶劑之接著劑溶液塗佈於臨時基材11上,再將溶劑自所塗佈的接著劑溶液中去除。作為臨時基材11,較好的是使用樹脂膜,尤其好的是利用矽酮系脫模劑而實施脫模處理之聚對苯二
甲酸乙二醇酯膜。接著劑層21通常是以覆蓋於覆蓋膜13上的狀態來供給。
使覆蓋膜13於輥61的外周面上移動而將覆蓋膜13自接著劑層21上剝離後,使用具有圓形刀刃的切割器31而將接著劑層21切割成圓形。此時,以將臨時基材11完全切斷之方式,僅切斷接著劑層21。經由設置於切割器31的下游側之輥63的外周面,去除作為接著膜21a而殘留的圓形部分以外的部分即接著劑層的一部分21b。將接著劑層的一部分21b去除後,使空出規定間隔D1而配置的接著膜21a殘留於臨時基材11上。
間隔D1,並不依賴於作為最終產品的多層膜1中相鄰的接著膜21a彼此之間的間隔D2,可任意地設定。在本實施形態的情況下,將間隔D1設定為小於間隔D2。
藉由縮小間隔D1而高密度地形成接著膜21a,可大幅度減少作為不要部分而被去除之接著劑層的一部分21b的量。特別是,如本實施形態般,晶粒接合所使用的接著劑通常價格較高,由不要部分的減少所帶來的優點顯著。另外,如上所述,為了確保切割時向環狀框架上貼附時所使用的突出部22A的空間,必須將多層膜1中的接著膜21a彼此之間的間隔D2設為比較大,因此本發明之優點極為顯著。
較好的是,將間隔D1(相鄰的接著膜彼此之間的最短距離)設定於0~60 mm的範圍。臨時基材11上相鄰的接著膜21a,亦可以不空出間隔即以間隔D1=0之方式加以
配置。若間隔D1大於此範圍,則作為不要部分而被去除的接著劑層的一部分21b的量會增多,從而減小本發明的效果。
間隔D2可並不取決於間隔D1而進行調整,多個間隔D2可各不相同。
於圖4、5所示的實施形態中,使接著膜21a移動至支持膜10上之步驟是與將接著膜21a與黏著劑層22加以貼合之步驟同時進行。將接著膜21a自臨時基材11上轉換為貼附於黏著劑層22上,再將支持膜10貼附於黏著劑層22上的接著膜21a上。經由此一系列製程,而使接著膜21a自臨時基材11上移動至支持膜10上。此處,將接著膜21a貼合於支持膜10及黏著劑層22上之順序,既可為任一步驟在先,亦可將兩者同時貼合。即,如圖4之實施形態般,將臨時基材11上的接著膜21a與黏著劑層22加以貼合,使接著膜21a移動至黏著劑層22上,然後將支持膜10貼合於黏著劑層22上的接著膜21a上,亦可代替上述步驟,例如將臨時基材11上的接著膜21a與支持膜10加以貼合,使接著膜21a移動至支持膜10上,然後將黏著劑層22貼合於支持膜10上的接著膜21a上。
黏著劑層22是以具有基礎膜12及黏著劑層22的切割膜9之形態而供給。黏著劑層22是自通常用作切割用膜狀黏著劑的黏著劑中加以適當選擇。自原料卷中卷出的長切割膜9於輥66的外周面上移動。與輥66對向而配置輥65,以能夠沿箭頭B的方向移動之方式來設置輥66。承載有接
著劑層21a之臨時基材11於輥65的外周面上移動,當接著膜21a到達輥65、66之間時,輥66向輥65加壓。藉此,將接著膜21a轉印至黏著劑層22上。接著膜21a通過輥65、66之間後,輥66以離開輥65之方式沿箭頭B的方向移動,於規定位置處待機直至下一個接著膜21a到達為止。自接著膜21a上剝離之臨時基材11經由輥65的外周面而被排出。
於輥65、66的上游側,設置有能夠檢測接著膜21a的外觀狀態之電荷耦合元件(charge coupled device,CCD)攝影機等的檢查部80,藉由檢查部80來檢查接著膜21a的外觀。於檢查結果判定為不良的接著膜21a通過轉印用輥65、66間時,輥66維持在與輥65分離的位置,並不將不良的接著膜21a轉印至黏著劑層22上,而將不良的接著膜21a與臨時基材11同時排出。換言之,臨時基材11上的多個接著膜21a中,僅將藉由檢查接著膜21a的外觀而判定為良品的接著膜21a移動至支持膜10上。接著膜21a是否良好,是基於根據所需產品規格等而預先設定的標準來判定。藉此,可獲得實質上不含不良接著膜21a的多層膜1。
將經由輥68的外周面而供給的支持膜10,貼附於與黏著劑層22相貼合的接著膜21a上。藉由輥68而將支持膜10壓接於黏著劑層22上。隨後,如圖5所示,藉由具有設成環狀的刀刃之切割器32,按照環狀的露出部90的形狀將黏著劑層22及基礎膜12切斷。經由輥69的外周面
將環狀黏著劑層的一部分22c及基礎膜的一部分12c去除,以形成黏著膜22a。藉由以上步驟而獲得圖1、2所示的多層膜1。
作為支持膜10,較好的是使用聚對苯二甲酸乙二醇酯膜等樹脂膜。當經過了由於支持膜上塗佈接著劑溶液之步驟而於支持膜上形成接著膜時,通常難以確保接著膜對支持膜的充分的脫模性。若脫模性不足,則將包含接著膜的積層體自支持膜上剝離時,有時會使接著膜與黏著膜剝離。因此,通常必須對支持膜的表面施行脫模處理。但是,若於支持膜的接著膜側的表面上形成有矽酮系脫模劑等的脫模劑之層,則脫模劑會被轉印至黏著膜的突出部中與支持膜接觸的部分的表面上,從而有可能使突出部的黏著力下降。進而,有可能由於脫模劑的混入而使接著膜的特性下降,或者由於脫模劑而污染半導體元件等。
相對於此,在本實施形態的情況下,並不將接著劑溶液塗佈於支持膜10上,而是將形成於臨時基材11上的接著膜21a轉印至支持膜10上,因此即使不對支持膜10的接著膜21a側的表面施行脫模處理,亦能夠製成接著膜21a自支持膜10上剝離的剝離性為良好的產品。因此,根據本實施形態,能夠一邊維持接著膜21a對支持膜10的充分的脫模性,一邊採用在接著膜21a側的表面上實質上未附著脫模劑的支持膜10。因無需進行支持膜10的脫模處理,故根據本實施形態可避免上述問題的發生。另外,即使接著膜10與臨時基材11的密著性有一定程度的強度,亦能
夠進行接著膜10的轉換貼附,因此不一定必須實施臨時基材11的脫模處理。
另外,當經由於支持膜上塗佈接著劑溶液之步驟而於支持膜上形成接著膜時,於殘留在支持膜上的接著膜周圍,支持膜上有時會殘留一部分接著劑層。特別是若未對支持膜施行脫模處理,則易於殘留著接著劑層。有可能將殘留的接著劑轉印至黏著膜的突出部,從而使突出部的黏著性下降。根據本實施形態,亦可解決上述問題。
進而,當經由於支持膜上塗佈接著劑溶液之步驟而於支持膜上形成接著膜時,必須於支持膜上切割該接著膜,因此切割該接著膜時支持膜表面上容易產生切割傷痕。若存在此切割傷痕,則有時會於接著膜的周圍在支持膜表面上殘留膜塵等異物。根據本實施形態,可抑制上述切割傷痕的發生及異物的殘留。
圖6、圖7及圖8是表示多層膜1之製造方法的其他實施形態的模式圖。圖6所示的實施形態中,代替圖4中的輥63,而使之沿著具有具銳角形狀的剖面之剝離板40的銳角部分,藉此去除臨時基材11。於去除臨時基材11的同時,將接著膜21a插入至對向配置的1對輥70、71之間。將切割膜9供給至輥70的外周面,將支持膜10供給至輥71的外周面。於1對輥70、71之間,將接著膜21a插入黏著劑層22與支持膜10之間。
於圖7所示之實施形態中,藉由使用切割器31來進行切割,而將臨時基材11上的接著劑層21與覆蓋膜13同時
切割成圓形。殘留著接著膜21a及此接著膜21a上之履蓋膜13a,經由輥72的外周面將不要部分即接著劑層的一部分21b及覆蓋膜的一部分13b去除。隨後,藉由沿著具有具銳角形狀的剖面之剝離板40的銳角部分,而去除臨時基材11。於去除臨時基材11的同時,將接著膜21a及覆蓋膜13a貼附於經由輥74所供給的切割膜9的黏著劑層22上。於剝離板40的下游側,夾持切割膜9而將吸附墊50設置於接著膜21a的相反側的位置,藉由吸附墊50的作用而將切割膜9吸附於吸附墊50上。吸附墊50藉由靜電、真空壓力等作用而吸引該切割膜9。利用輥75,將接著膜21a壓接於吸附在吸附墊50上的切割膜9上。隨後,去除覆蓋膜13a,利用輥76而將支持膜10積層於露出的接著膜21a上。
於圖8所示之實施形態中,利用輥77而自以接著膜21a及覆蓋膜13a構成的積層體上剝離臨時基材11。於剝離臨時基材11的位置,將此積層體吸附於在此積層體的臨時基材11的相反側待機之吸附墊51上。承載有以接著膜21a及覆蓋膜13a構成的積層體之吸附墊51向下游側移動,將接著膜21a貼附於利用輥78所供給的切割膜9的黏著劑層22上。然後,去除覆蓋膜13a,利用輥76而將支持膜10積層於露出的接著膜21a上。
於圖6至圖8所示的步驟之後,以與圖5的實施形態同樣之方式形成黏著膜22a。
本發明並不限定於以上說明之實施形態,只要不脫離
本發明之宗旨,則可作適當變更。例如,臨時基材的寬度亦可小於支持膜的寬度。藉此,於寬度方向上亦可減少接著劑層的不要部分。另外,若為使接著膜自臨時基材向支持膜移動、並於接著膜上形成黏著膜的一系列製程,則可無特別限制地採用,對於各構成構件的貼附或轉換貼附之順序等可作適當改變。
根據本發明,於製造具有設置於支持膜上的多個接著膜之多層膜時,能夠以與最終產品中的間隔不同而任意設定的間隔、或者不空出間隔而有效地形成多個接著膜。其結果,例如能夠減少作為不要部分而去除之接著劑層的量,從而謀求減少廢棄物或降低製造成本。另外,根據本發明,能夠抑制支持膜表面上的切割傷痕的產生以及由此所造成的膜塵等異物的殘留。
1‧‧‧多層膜
3‧‧‧積層體(晶粒接合切割一體型膜)
5‧‧‧半導體晶圓
7‧‧‧環狀框架
9‧‧‧切割膜
10‧‧‧支持膜
11‧‧‧臨時基材
12、12a、12b‧‧‧基礎膜
12c‧‧‧基礎膜的一部分
13、13a‧‧‧覆蓋膜
13b‧‧‧覆蓋膜的一部分
21‧‧‧接著劑層
21a‧‧‧接著膜
21b‧‧‧接著劑層的一部分
22‧‧‧黏著劑層
22A‧‧‧突出部
22a‧‧‧黏著膜
22c‧‧‧黏著劑層的一部分(環狀部分)
31、32‧‧‧切割器
40‧‧‧剝離板
50、51‧‧‧吸附墊
61、62、63、64、65、66、67、68、69、70、71、72、73、74、75、76、77、78‧‧‧輥
80‧‧‧檢查部
90‧‧‧露出部
D1、D2‧‧‧間隔
圖1是表示多層膜的一實施形態的平面圖。
圖2是沿圖1的Ⅱ-Ⅱ線的端面圖。
圖3是表示切割半導體晶圓的步驟的端面圖。
圖4是表示多層膜的製造方法的一實施形態的模式圖。
圖5是表示多層膜的製造方法的一實施形態的模式圖。
圖6是表示多層膜的製造方法的一實施形態的模式圖。
圖7是表示多層膜的製造方法的一實施形態的模式圖。
圖8是表示多層膜的製造方法的一實施形態的模式圖。
9‧‧‧切割膜
10‧‧‧支持膜
11‧‧‧臨時基材
12‧‧‧基礎膜
13‧‧‧覆蓋膜
21‧‧‧接著劑層
21a‧‧‧接著膜
21b‧‧‧接著劑層的一部分
22‧‧‧黏著劑層
31‧‧‧切割器
61、62、63、64、65、66、67、68‧‧‧輥
80‧‧‧檢查部
D1、D2‧‧‧間隔
Claims (9)
- 一種多層膜的製造方法,此多層膜具備:支持膜、沿上述支持膜的長度方向而配置於上述支持膜上的多個接著膜;該製造方法包括:對形成於臨時基材上的接著劑層加以切割,以將其區分為沿上述臨時基材的長度方向空出規定的間隔並用作上述接著膜的多個部分及此多個部份以外的部分之步驟(A);以及沿上述支持膜的長度方向空出規定的間隔而使上述臨時基材上的多個上述接著膜移動至上述支持膜之步驟(B);此製造方法,上述臨時基材上相鄰的上述接著膜的間隔小於上述支持膜上相鄰的上述接著膜的間隔。
- 一種多層膜的製造方法,此多層膜具備:支持膜、沿上述支持膜的長度方向而配置於上述支持膜上的多個接著膜、設置於上述接著膜上並具有自上述接著膜的外周突出的突出部之黏著膜;此製造方法包括:對形成於臨時基材上的接著劑層加以切割,以將其區分為沿上述臨時基材的長度方向空出規定的間隔或者不空出間隔而加以配置並用作上述接著膜的多個部分及此多個部份以外的部分之步驟(A);以及沿上述支持膜的長度方向空出規定的間隔而使上述臨時基材上的多個上述接著膜移動至上述支持膜之步驟(B); 此製造方法進一步包括:將上述接著膜與黏著劑層加以貼合之步驟(a);將上述接著膜上的上述黏著劑層加以切割,以將其區分為用作上述黏著膜的多個部分及其以外的部分之步驟(b);將上述黏著劑層中除上述黏著膜以外的部分的一部分或者全部去除,而將上述黏著膜保留於上述接著膜上之步驟(c);於上述步驟(a)中,藉由將上述接著膜與上述黏著劑層加以貼合,而沿上述黏著劑層的長度方向,空出與上述臨時基材上相鄰的上述接著膜的間隔不同的規定間隔,使上述臨時基材上的多個上述接著膜移動至上述黏著劑層上;上述步驟(B)依序包括:上述步驟(a)及步驟(d),此步驟(d)是藉由將上述黏著劑層上的上述接著膜與上述支持膜加以貼合,而以將多個上述接著膜貼合於上述黏著劑層上之狀態,沿上述支持膜的長度方向空出規定的間隔而使其移動至上述支持膜上;此製造方法,於上述步驟(B)之後包括上述步驟(b)及(c)。
- 如申請專利範圍第1項或第2項所述之多層膜的製造方法,其中於上述步驟(A)與上述步驟(B)之間進一步包括步驟(C):將上述臨時基材上的上述接著劑層中除上述接著膜以外的部分的一部分或者全部去除,而將上述 接著膜保留於上述臨時基材上。
- 如申請專利範圍第1項或第2項所述之多層膜的製造方法,其中上述支持膜實質上未具備沿上述接著膜的外周的切割傷痕。
- 如申請專利範圍第2項所述之多層膜的製造方法,其中於上述步驟(B)之後包括上述步驟(a)、(b)及(c);於上述步驟(a)中,將上述步驟(B)中移動至上述支持膜上的上述接著膜,以與上述支持膜相貼合之狀態,貼合於上述黏著劑層上。
- 如申請專利範圍第2項所述之多層膜的製造方法,其中於上述步驟(c)中,將上述黏著劑層加以切割,以將其區分為用作上述黏著膜的多個部分與圍繞該各個部分的部分及這些部分以外的部分,且將上述黏著劑層中圍繞上述多個各黏著膜的部分予以去除。
- 如申請專利範圍第2項所述之多層膜的製造方法,其中上述接著膜為晶粒接合用的接著膜,上述黏著膜為切割用的黏著膜。
- 如申請專利範圍第1項或第2項所述之多層膜的製造方法,其進一步包括檢查上述臨時基材上的上述接著膜的外觀之步驟。
- 如申請專利範圍第8項所述之多層膜的製造方法,其中於上述臨時基材上的多個上述接著膜中,僅使藉由檢查上述接著膜外觀的步驟而判定為良品的接著膜移動至上述支持膜上。
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