WO2008136284A1 - 多層フィルムの製造方法 - Google Patents

多層フィルムの製造方法 Download PDF

Info

Publication number
WO2008136284A1
WO2008136284A1 PCT/JP2008/057606 JP2008057606W WO2008136284A1 WO 2008136284 A1 WO2008136284 A1 WO 2008136284A1 JP 2008057606 W JP2008057606 W JP 2008057606W WO 2008136284 A1 WO2008136284 A1 WO 2008136284A1
Authority
WO
WIPO (PCT)
Prior art keywords
base material
temporary base
multilayer film
adhesive films
supporting film
Prior art date
Application number
PCT/JP2008/057606
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Tamaki
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to EP08740661A priority Critical patent/EP2033997A4/en
Priority to CN2008800002616A priority patent/CN101541906B/zh
Priority to US12/306,283 priority patent/US8801879B2/en
Priority to JP2008543814A priority patent/JP4270331B2/ja
Publication of WO2008136284A1 publication Critical patent/WO2008136284A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/68395—Separation by peeling using peeling wheel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1056—Perforating lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1084—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing of continuous or running length bonded web
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1084—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing of continuous or running length bonded web
    • Y10T156/1085—One web only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/16—Surface bonding means and/or assembly means with bond interfering means [slip sheet, etc. ]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Laminated Bodies (AREA)
  • Dicing (AREA)

Abstract

　仮基材上に形成された接着剤層を、仮基材の長手方向に沿って所定の間隔を空けて配され接着フィルムとして用いられる複数の部分とそれ以外の部分とに区分されるようにカットする工程と、仮基材上の複数の接着フィルムを、支持フィルムの長手方向に沿って所定の間隔を空けて支持フィルム上に移動させる工程と、を備える多層フィルムの製造方法。仮基材上で隣り合う接着フィルムの間隔は、支持フィルム上で隣り合う接着フィルムの間隔とは異なる。
PCT/JP2008/057606 2007-04-26 2008-04-18 多層フィルムの製造方法 WO2008136284A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08740661A EP2033997A4 (en) 2007-04-26 2008-04-18 METHOD FOR MANUFACTURING MULTILAYER FILM
CN2008800002616A CN101541906B (zh) 2007-04-26 2008-04-18 多层膜的制造方法
US12/306,283 US8801879B2 (en) 2007-04-26 2008-04-18 Method for manufacturing multilayer film
JP2008543814A JP4270331B2 (ja) 2007-04-26 2008-04-18 多層フィルムの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-117423 2007-04-26
JP2007117423 2007-04-26

Publications (1)

Publication Number Publication Date
WO2008136284A1 true WO2008136284A1 (ja) 2008-11-13

Family

ID=39943398

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057606 WO2008136284A1 (ja) 2007-04-26 2008-04-18 多層フィルムの製造方法

Country Status (8)

Country Link
US (1) US8801879B2 (ja)
EP (1) EP2033997A4 (ja)
JP (1) JP4270331B2 (ja)
KR (1) KR101121365B1 (ja)
CN (1) CN101541906B (ja)
MY (1) MY147133A (ja)
TW (1) TWI446421B (ja)
WO (1) WO2008136284A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064376A1 (ja) * 2008-12-01 2010-06-10 日東電工株式会社 半導体装置製造用フィルムロール
JP2019151745A (ja) * 2018-03-02 2019-09-12 日東電工株式会社 剥離材付き接着シートの巻回体

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017689A1 (de) * 2010-08-13 2012-05-10 Tesa Se Verfahren zur Herstellung eines Klebebands mit überstehendem Liner
DE102011080760A1 (de) * 2011-08-10 2013-02-14 Tesa Se Verfahren zur Herstellung eines Klebebands mit überstehendem Liner
JP5996241B2 (ja) * 2012-04-12 2016-09-21 デクセリアルズ株式会社 接着フィルムの貼着装置、接着フィルムの貼着方法、及び接続構造体
JP2017535946A (ja) * 2014-11-05 2017-11-30 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 製品基板をコーティングするための方法と装置
KR102098466B1 (ko) 2018-04-23 2020-04-07 주식회사 포스코 간격 보정 방법
KR102238757B1 (ko) * 2019-02-26 2021-04-09 구자규 반도체 웨이퍼의 보호필름 제조방법 및 이에 따라 제조된 보호필름

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519276B2 (ja) * 1977-06-30 1980-05-24
JPS5991176A (ja) * 1982-11-15 1984-05-25 Nitto Electric Ind Co Ltd 両面接着片配付テ−プの製造方法
JPH0457871A (ja) * 1990-06-26 1992-02-25 Sekisui Chem Co Ltd 両面粘着テープもしくはフィルム及びその製造方法
JP2004221336A (ja) 2003-01-15 2004-08-05 Hitachi Chem Co Ltd ダイボンドダイシング一体型フィルム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4475969A (en) * 1978-01-19 1984-10-09 Avery International Corporation Label roll manufacture
DE2832248A1 (de) 1978-07-22 1980-01-31 Celamerck Gmbh & Co Kg Dispenser fuer die applikation von pheromonen
US6357503B1 (en) * 1998-06-13 2002-03-19 Pasquini Und Kromer Gmbh Device for producing a strip with self-adhesive labels or other materials with parts placed underneath and a device for laterally guiding edges
US6451154B1 (en) * 2000-02-18 2002-09-17 Moore North America, Inc. RFID manufacturing concepts
JP2002052629A (ja) * 2000-08-09 2002-02-19 Sato Corp ラベル連続体の製造方法及び装置
KR100468748B1 (ko) 2002-07-12 2005-01-29 삼성전자주식회사 프리컷 다이싱 테이프와 범용 다이싱 테이프를 웨이퍼에 마운팅할 수 있는 다이싱 테이프 부착 장비 및 이를포함하는 인라인 시스템
KR101177251B1 (ko) 2003-06-06 2012-08-24 히다치 가세고교 가부시끼가이샤 접착시트, 다이싱 테이프 일체형 접착시트 및 반도체 장치의 제조방법
JP2005162818A (ja) 2003-12-01 2005-06-23 Hitachi Chem Co Ltd ダイシングダイボンドシート
WO2005057644A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. ウェハ加工用テープおよびその製造方法
JP2006190416A (ja) * 2005-01-07 2006-07-20 Fuji Photo Film Co Ltd 光ディスク用のカバー層の打ち抜き装置及び方法と貼り合せ装置及び方法
JP4743707B2 (ja) 2006-03-27 2011-08-10 大阪シーリング印刷株式会社 多重ラベルの製造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519276B2 (ja) * 1977-06-30 1980-05-24
JPS5991176A (ja) * 1982-11-15 1984-05-25 Nitto Electric Ind Co Ltd 両面接着片配付テ−プの製造方法
JPH0457871A (ja) * 1990-06-26 1992-02-25 Sekisui Chem Co Ltd 両面粘着テープもしくはフィルム及びその製造方法
JP2004221336A (ja) 2003-01-15 2004-08-05 Hitachi Chem Co Ltd ダイボンドダイシング一体型フィルム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2033997A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064376A1 (ja) * 2008-12-01 2010-06-10 日東電工株式会社 半導体装置製造用フィルムロール
JP2010126716A (ja) * 2008-12-01 2010-06-10 Nitto Denko Corp 半導体装置製造用フィルムロール
TWI415774B (zh) * 2008-12-01 2013-11-21 Nitto Denko Corp 半導體裝置製造用薄膜卷
JP2019151745A (ja) * 2018-03-02 2019-09-12 日東電工株式会社 剥離材付き接着シートの巻回体

Also Published As

Publication number Publication date
EP2033997A4 (en) 2012-02-29
TW200919559A (en) 2009-05-01
EP2033997A1 (en) 2009-03-11
US8801879B2 (en) 2014-08-12
KR101121365B1 (ko) 2012-03-09
TWI446421B (zh) 2014-07-21
US20090236026A1 (en) 2009-09-24
JP4270331B2 (ja) 2009-05-27
JPWO2008136284A1 (ja) 2010-07-29
KR20090028685A (ko) 2009-03-19
MY147133A (en) 2012-10-31
CN101541906A (zh) 2009-09-23
CN101541906B (zh) 2012-09-19

Similar Documents

Publication Publication Date Title
WO2008136284A1 (ja) 多層フィルムの製造方法
EP2165366B8 (en) A method for forming a patterned layer on a substrate
MY165547A (en) Multilayer, heat-shrinkeable film comprising a plurality of microlayers and method for its fabrication
WO2011162999A3 (en) Cutting elements for earth-boring tools, earth-boring tools including such cutting elements, and methods of forming cutting elements for earth-boring tools
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2007140391A3 (en) Methods of making decomposable thin films of polyelectrolytes and uses thereof
EP2100987A4 (en) SURFACE-TREATED COPPER FOIL, SURFACE-TREATED COPPER FOIL WITH VERY THIN PRIMARY RESIN LAYER, METHOD FOR PRODUCING SURFACE-TREATED COPPER FOIL AND METHOD FOR PRODUCING SURFACE-TREATED COPPER FOIL WITH VERY THIN PRIMARY RESIN LAYER
WO2009120548A3 (en) Multilayer articles and methods of making and using the same
WO2009017032A1 (ja) バリア層つき基板、表示素子および表示素子の製造方法
EP2009135A4 (en) BASE SUBSTRATE FOR EPITAXIC DIAMOND FILM, METHOD FOR MANUFACTURING BASE SUBSTRATE FOR EPITAXIC DIAMOND FILM, EPITAXIC DIAMOND FILM MANUFACTURED BY THE BASE SUBSTRATE FOR EPITAXIC DIAMOND FILM, AND METHOD FOR FABRICATION
WO2011066590A3 (en) Thermochromic coating and method of manufacturing thereof
WO2007084540A3 (en) Electrode arrays and methods of fabrication thereof
WO2008156337A3 (en) Solar cell, method of fabricating the same and apparatus for fabricating the same
EP2158884A3 (en) Adhesive patch
DK2188503T3 (da) Fremgangsmåde til frembringelse af et oxidlag på en metallisk folie, folie med oxidlag og heraf fremstillet honeycomb-legeme
GB2439599B (en) Thin film transistor array substrate and method fabricating the same
FR2912552B1 (fr) Structure multicouche et son procede de fabrication.
WO2012047069A3 (ko) 발광소자 및 그 제조방법
WO2012030129A3 (en) Multilayer film
WO2013003420A3 (en) A semiconductor substrate and method of manufacturing
WO2010082732A3 (ko) 경면효과를 가지는 인테리어 필름 및 이의 제조방법
EP2178688A4 (en) BICOMPONENTILE FILMS, FILMLAMINATES AND SYSTEMS DIVIDED IN A ZERO-PANELING SYSTEM, AND METHOD FOR THE PRODUCTION THEREOF
WO2008114341A1 (ja) 半導体装置およびその製造方法
EP2181459A4 (en) PROCESS FOR PRODUCING THIN FILM AND APPARATUS FOR MANUFACTURING THE SAME
WO2009014345A3 (en) Light emitting device and method of manufacturing the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000261.6

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2008543814

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020087026898

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2008740661

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12306283

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740661

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE