TWI415774B - 半導體裝置製造用薄膜卷 - Google Patents

半導體裝置製造用薄膜卷 Download PDF

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Publication number
TWI415774B
TWI415774B TW098140867A TW98140867A TWI415774B TW I415774 B TWI415774 B TW I415774B TW 098140867 A TW098140867 A TW 098140867A TW 98140867 A TW98140867 A TW 98140867A TW I415774 B TWI415774 B TW I415774B
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Taiwan
Prior art keywords
film
adhesive layer
adhesive
semiconductor device
resin
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TW098140867A
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English (en)
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TW201028348A (en
Inventor
Sadahito Misumi
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Nitto Denko Corp
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Publication of TW201028348A publication Critical patent/TW201028348A/zh
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Publication of TWI415774B publication Critical patent/TWI415774B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D85/00—Containers, packaging elements or packages, specially adapted for particular articles or materials
    • B65D85/67—Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material
    • B65D85/671—Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material wound in flat spiral form
    • B65D85/672—Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material wound in flat spiral form on cores
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
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    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description

半導體裝置製造用薄膜卷
本發明是有關於一種將半導體裝置的製造方法中所使用的切晶．黏晶膜(dicing die bonding film)等半導體裝置製造用薄膜捲繞成卷狀而成的半導體裝置製造用薄膜卷(film roll)。
將形成有電路圖案的半導體晶圓視需要利用背面研磨而調整厚度之後，切晶成半導體晶片(切晶步驟)。接著，利用接著劑將上述半導體晶片固著於導線架(lead frame)等被黏接體上(晶粒黏著(die attach)步驟)後，過渡到接合(bonding)步驟。於上述晶粒黏著步驟中，將接著劑塗佈於導線架或半導體晶片而進行晶粒黏著。然而，於此方法中，接著劑層難以均一化，而且接著劑的塗佈需要特殊裝置或較長時間。因此，提出一種切晶．黏晶膜，其於切晶步驟中接著保持半導體晶圓，並且亦賦予黏貼(mount)步驟所需之晶片固著用的接著劑層(例如參照日本專利特開昭60-57642號公報)。
日本專利特開昭60-57642號公報中所揭示的切晶．黏晶膜是於支撐基材上依序積層黏著劑層及接著劑層，且將此接著劑層設為可剝離而成的。即，於利用接著劑層的保持下對半導體晶圓進行切晶之後，使支撐基材延伸而將半導體晶片與接著劑層一起剝離，將其分別回收而經由此接著劑層固著於導線架等的被黏接體上。
對於此類切晶．黏晶膜的接著劑層，期望以不產生不能切晶或尺寸誤差等的方式，對於半導體晶圓而言為良好的保持力，以及可將切晶後的半導體晶片與接著劑層一體地自支撐基材剝離的良好剝離性。然而，難以使此兩種特性保持平衡。
另一方面，隨著半導體裝置的薄型化、小型化，半導體晶片的厚度自先前的200μm薄層化至100μm或100μm以下。當使用100μm或100μm以下的半導體晶片而製造半導體裝置時，就晶片保護的觀點而言，併用了熱塑性樹脂以及熱固性樹脂的接著劑層的使用正逐步增加(例如參照下述日本專利特開2002-261233號公報以及日本專利特開2000-104040號公報)。
具有此種接著劑層的切晶．黏晶膜，在使用之前，以捲繞於卷芯上的卷體狀態下進行保管。切晶．黏晶膜的捲繞藉由如下方式進行：將應捲繞的切晶．黏晶膜的捲繞起始端緣接著於卷芯上，並使此卷芯沿捲繞方向旋轉。此時，若捲繞張力較弱，則接著薄片(sheet)變形而產生褶皺，並且捲繞端面紊亂。因此，為了以捲繞端面對齊的方式捲繞切晶．黏晶膜，一面施加規定以上的張力一面進行捲繞。
然而，若以如捲繞端面對齊的較強的張力進行捲繞，則應力集中於卷體的中心方向，其結果例如造成於卷體端緣部與捲繞於端緣部上面的切晶．黏晶膜中產生捲繞痕跡。若對上述切晶．黏晶膜黏貼厚度為100μm或100μm以下的半導體晶圓，則存在如下問題：於此半導體晶圓 中產生薄膜的捲繞痕跡所引起的階差。而且，若對半導體晶圓進行切晶而製成半導體晶片，將此半導體晶片經由接著劑層晶粒黏著(die attach)於被黏接體，則於存在捲繞痕跡的接著劑層，無法對半導體晶片或被黏接體進行充分密著，因此無法發揮充分的接著力。其結果，存在半導體晶片自被黏接體脫落的問題。
本發明是為了解決上述課題研發而成，其目的在於降低捲繞為卷狀的切晶．黏晶膜等半導體裝置製造用薄膜中產生捲繞痕跡的情況，提供一種密著性以及接著性優異的半導體裝置製造用薄膜卷。
本申請案發明者等為了解決上述先前的問題點，就半導體裝置製造用薄膜捲進行了研究。其結果發現將捲繞半導體裝置製造用薄膜的卷芯之直徑控制為規定大小，由此可不於此薄膜上產生捲繞痕跡地捲繞為卷狀，從而完成本發明。
即，本發明的半導體裝置製造用薄膜卷是為了解決上述課題而將半導體裝置製造用薄膜以卷狀捲繞於圓柱狀的卷芯上而成的，其特徵在於：上述卷芯的直徑為7.5cm~15.5cm的範圍內。
於卷芯上的半導體裝置製造用薄膜(以下有時稱作「薄膜」。)的捲繞，為了防止此薄膜變形而產生褶皺或者捲繞端面紊亂，一面對薄膜施加規定以上的張力一面進行捲繞。於此種狀態下捲繞於卷芯上的薄膜，應力隨著靠近中 心而集中。本發明是藉由如下處理來試圖緩和應力集中：將卷芯的直徑設定為7.5cm或7.5cm以上且擴大對於需捲繞的薄膜的接觸面積，藉此減輕對每單位面積所施加的壓力。其結果，即便以長時間捲繞於卷芯上的狀態保管薄膜卷，亦可防止例如捲繞於薄膜的端緣部的上面的薄膜產生捲繞痕跡。另外，使卷芯的直徑為15.5cm或15.5cm以下的原因在於：防止半導體裝置製造用薄膜卷的直徑變得過大而使操作性下降。
於上述構成中，就上述半導體裝置製造用薄膜而言，可使用具有於基材上依序積層有黏著劑層、接著劑層以及隔離膜(separator)的結構的薄膜。若為本發明，則於具有如上所述的積層結構的切晶．黏晶膜中，亦可防止其黏著劑層或接著劑層等中產生捲繞痕跡。其結果，例如對於黏貼於此薄膜的厚度極薄的半導體晶圓，可防止上述捲繞痕跡所引起的階差的產生。
較好的是上述接著劑層的厚度方向中的蕭氏A硬度為10~60，其厚度為1μm~500μm。使接著劑層的蕭氏A硬度以及厚度為上述數值範圍內，由此可進一步防止厚度方向中的捲繞痕跡所引起的階差的產生。
於上述構成中，上述半導體裝置製造用薄膜較好的是以被施加20N/m~100N/m之範圍內的捲繞張力的狀態捲繞於卷芯上。藉由將薄膜以上述數值範圍內的捲繞張力捲繞於卷芯上，可防止薄片變形而產生褶皺，並且可並不會使捲繞端面紊亂地進行捲繞。
於上述構成中，半導體裝置製造用薄膜卷的直徑較好的是8cm~30cm的範圍內。藉由使薄膜卷的直徑為8cm或8cm以上，可進一步緩和隨著靠近中心而集中的應力。另一方面，藉由使上述直徑為30cm或30cm以下，可防止薄膜的捲繞量變得過多而過度施加壓力。
而且，較好的是上述接著劑層包含熱塑性樹脂以及無機填充劑。
較好的是上述接著劑層包含熱固性樹脂以及熱塑性樹脂。
較好的是上述熱塑性樹脂為丙烯酸系樹脂。
較好的是上述熱固性樹脂為環氧樹脂或酚樹脂的至少任一種。由於丙烯酸系樹脂的離子性雜質較少且耐熱性較高，因此可確保半導體元件的可靠性。
本發明藉由上述說明的手段，發揮如下所述的效果。
即，根據本發明，將供半導體裝置製造用薄膜捲繞的卷芯的直徑設定為7.5cm或7.5cm以上，由此擴大薄膜對於卷芯的接觸面積。藉此可減輕對每單位面積所施加的壓力且緩和應力集中，因此即便於長期的保管後，亦可防止薄膜中產生捲繞痕跡。其結果，例如即便於本發明的薄膜上黏貼半導體晶圓，亦可防止此半導體晶圓中產生薄膜的捲繞痕跡所引起的階差。而且，薄膜對於半導體晶圓或半導體晶片等的密著性亦優異，可發揮良好的接著性。
為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。
對於本實施形態的半導體裝置製造用薄膜卷(以下成為「薄膜卷」)，作為半導體裝置製造用薄膜，以切晶．黏晶膜為例於以下進行說明。圖1是表示本實施形態的半導體裝置製造用薄膜卷的概略的立體圖。圖2是表示作為半導體裝置製造用薄膜的切晶．黏晶膜的積層結構的剖面示意圖。
如圖1所示，本實施形態的薄膜卷1是將切晶．黏晶膜3以卷狀捲繞於圓柱狀的卷芯2上而成的。切晶．黏晶膜3的捲繞藉由如下方式進行：將應捲繞的切晶．黏晶膜3的捲繞起始端緣接著於卷芯2上，並使此卷芯2沿捲繞方向旋轉。於進行此捲繞時，對切晶．黏晶膜3施加20N/m~100N/m、較好的是25N/m~90N/m、更好的是30N/m~80N/m的範圍內的捲繞張力。藉由使捲繞張力為20N/m或20N/m以上，可防止切晶．黏晶膜3中產生變形所引起的褶皺或捲繞端面的紊亂。另一方面，藉由使捲繞張力為100N/m或100N/m以下，可防止對切晶．黏晶膜3施加過度的張力而伸長的情況。
上述卷芯2的直徑r較好的是7.5cm~15.5cm的範圍內，更好的是7.5cm~12.5cm的範圍內。藉由使直徑r為7.5cm或7.5cm以上，可增大卷芯2與切晶．黏晶膜3的接觸面積，可降低對每單位面積所施加的壓力。其結果，緩和對切晶．黏晶膜3所施加的應力集中。另一方面，藉由 使直徑r為15.5cm或15.5cm以下，可防止薄膜卷的直徑變得過大而使操作性下降的情況。
上述卷芯2必需為將切晶．黏晶膜3捲繞為卷狀的形狀，具體而言，例如較好的是圓柱狀的卷芯等。若為多角柱狀的卷芯，則於卷芯的角部產生應力集中，於切晶．黏晶膜中產生捲繞痕跡，故欠佳。對於卷芯2的構成材料並無特別限定，例如可使用金屬製或塑膠製等的卷芯。
而且，薄膜卷1的直徑R較好的是8cm~30cm的範圍內，更好的是8cm~25cm的範圍內。藉由使直徑R為8cm或8cm以上，可進一步緩和隨著靠近中心而越來越大的應力集中。另一方面，藉由使直徑R為30cm或30cm以下，可防止切晶．黏晶膜3的捲繞量變得過多而由此施加過度壓力的情況。
上述切晶．黏晶膜3具有於基材11上依序積層有黏著劑層12、接著劑層13以及隔離膜的結構。上述接著劑層13僅積層於半導體晶圓的黏附區域。而且，對於卷芯2的切晶．黏晶膜3的捲繞，於基材11面與隔離膜面彼此對向接觸的狀態下進行。另外，本實施形態的切晶．黏晶膜，亦可如圖3所示，而使用具有接著劑層13'積層於黏著劑層12上的整個面上之結構的切晶．黏晶膜3'。
上述基材11是具有紫外線穿透性，且成為切晶．黏晶膜3、3'的強度母體的基材。例如，可列舉低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合(random copolymerizing)聚丙烯、嵌段 共聚合(block copolymerizing)聚丙烯、均聚丙烯(homopolypropylene)、聚丁烯、聚甲基戊烯等聚烯烴(polyolefin)，乙烯-乙酸乙烯酯共聚物，離子聚合物(ionomer)樹脂，乙烯-(甲基)丙烯酸共聚物，乙烯-(甲基)丙烯酸酯(無規、交替)共聚物，乙烯-丁烯共聚物，乙烯-己烯共聚物，聚胺基甲酸酯(polyurethane)、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯，聚醯亞胺，聚醚醚酮，聚醚醯亞胺，聚醯胺，全芳香族聚醯胺，聚苯硫醚，芳族聚醯胺(aramid)(紙)，玻璃，玻璃布(glass cloth)，氟樹脂(fluorine resin)，聚氯乙烯，聚偏二氯乙烯，纖維素系樹脂，矽氧樹脂(silicone resin)，金屬(箔)，紙等。
而且，基材11的材料可列舉上述樹脂的交聯體等聚合物。上述塑膠薄膜亦可未經延伸而使用，亦可使用視需要實施了單軸或雙軸的延伸處理而成的膠薄膜。藉由以延伸處理等賦予了熱收縮性的樹脂薄片，於切晶後使此基材11熱收縮，由此降低黏著劑層12與接著劑層13、13'的接著面積，可使半導體晶片的回收變容易。
對於基材11的表面，為了提高與所鄰接之層的密著性、保持性等，可實施慣用的表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學性或物理性處理，以及利用底塗劑(例如下述黏著物質)的塗層處理。
上述基材11可適當選擇使用同種或不同種的聚合物，可視需要使用將數種聚合物摻合而成的材料。而且， 為了對基材11賦予抗靜電能力，可於上述基材11上設置包含金屬、合金、該些的氧化物等的厚度為30Å~500Å左右的導電性物質的蒸鍍層。基材11可為單層，或者亦可為2種或2種以上的多層。
基材11的厚度可並無特別限制地適當設定，通常是5μm~200μm左右。
上述黏著劑層12包含紫外線硬化型黏著劑。紫外線硬化型黏著劑可藉由照射紫外線而增大交聯度從而使其黏著力容易地降低，可藉由僅對圖2所示的黏著劑層12的與半導體晶圓黏附部分相對應的部分12a進行紫外線照射，而設定與其他部分12b的黏著力之差。
而且，於圖3所示的切晶．黏晶膜3'中，亦可藉由對與半導體晶圓黏附部分13a'相對應的部分12a照射紫外線，使此部分12a硬化而使黏著力降低。因於經硬化且黏著力降低的上述部分12a上黏附有接著劑層13，故黏著劑層12的上述部分12a與接著劑層13的邊界具有拾取(pickup)時容易剝落的性質。另一方面，未照射到紫外線的部分具有充分的黏著力，形成上述部分12b。
如上所述，於圖2所示的切晶．黏晶膜3的黏著劑層12中，上述部分12b可固定切晶環(dicing ring)。就切晶環而言，例如可使用不鏽鋼製等包含金屬的切晶環或者樹脂製切晶環。而且，於圖3所示的切晶．黏晶膜3'的黏著割層12中，藉由未硬化的紫外線硬化型黏著劑所形成的上述部分12b與接著劑層13'黏著，可確保切晶時的保持力。如 此，紫外線硬化型黏著劑可接著、剝離的平衡性良好地支撐用以將半導體晶片固著於基板等的被黏接體的接著劑層13'。
就上述紫外線硬化型黏著劑而言，可無特別限制地使用具有碳-碳雙鍵等紫外線硬化性之官能基且顯示出黏著性的化合物。紫外線硬化型黏著劑例如可列舉於丙烯酸系黏著劑、橡膠系黏著劑等普通的感壓性(pressure sensitivity)黏著劑中調配有紫外線硬化性單體成分或寡聚物成分的添加型紫外線硬化型黏著劑。
就半導體晶圓或玻璃等忌諱污染之電子零件的利用超純水或醇等有機溶劑的淨化清潔性等方面而言，上述感壓性黏著劑較好的是以丙烯酸系聚合物為基底聚合物(based polymer)的丙烯酸系黏著劑。
上述丙烯酸系聚合物例如可列舉將(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數為1~30，特別是碳數為4~18的直鏈狀或支鏈狀的烷基酯等)以及(甲基)丙烯酸環烷基酯(例如環戊酯、環己酯等)的1種或者2種或2種以上用作單體成分的丙烯酸系聚合物等。另外，所謂(甲基)丙烯酸酯是指丙烯酸酯及/或甲基丙烯酸酯，本發明的(甲基)均為相同的含義。
上述丙烯酸系聚合物是為了進行凝聚力、耐熱性等之改質，亦可視需要包含可與上述(甲基)丙烯酸烷基酯或環烷基酯共聚合的其他單體成分相對應的單元。此種單體成分例如可列舉丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基的單體；馬來酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂基酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等含羥基的單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙基酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基的單體；2-羥乙基丙烯醯基磷酸酯等含磷酸基的單體；丙烯醯胺、丙烯精等。該些可共聚合的單體成分可使用1種或者2種或2種以上。該些可共聚合之單體的使用量，較好的是總單體成分的40重量百分比(wt%)或40wt%以下。
另外，為了使上述丙烯酸系聚合物交聯，亦可視需要包含多官能性單體等作為共聚合用單體成分。此種多官能性單體例如可列舉己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯(pentaerythritol di(meth)acrylate)、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲 基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。該些多官能性單體亦可使用1種或者2種或2種以上。就黏著特性等方面而言，多官能性單體的使用量較好的是總單體成分的30wt%或30wt%以下。
上述丙烯酸系聚合物是藉由將單一單體或2種或2種以上的單體混合物供給至聚合而獲得的。聚合可以溶液聚合(solution polymerization)、乳化聚合(emulsion polymerization)、塊狀聚合(mass polymerization)、懸濁聚合(suspension polymerization)等任意方式進行。就防止對潔淨的被黏接體的汚染等方面而言，較好的是低分子量物質的含量較小。就此方面而言，丙烯酸系聚合物的數量平均分子量較好的是30萬或30萬以上，更好的是40萬~300萬左右。
而且，於上述黏著劑中，為了提高作為基底聚合物的丙烯酸系聚合物等的數量平均分子量，亦可適當使用外部交聯劑。外部交聯方法的具體方法可列舉添加聚異氰酸酯(polyisocyanate)化合物、環氧化合物、氮丙啶(aziridine)化合物、三聚氰胺系交聯劑等之所謂交聯劑而進行反應的方法。當使用外部交聯劑時，其使用量根據與應交聯的基底聚合物的平衡來適當決定，另外根據作為黏著劑的使用用途來適當決定。通常情況下，相對於上述基底聚合物100重量份，較好的是調配小於等於5重量份之程度，更好的是調配0.1重量份~5重量份。另外，於黏著劑中，除上 述成分以外，亦可視需要使用先前眾所周知的各種增黏劑(tackifier)、抗老化劑(antioxidant)等添加劑。
所調配的上述紫外線硬化性的單體成分例如可列舉胺基甲酸酯寡聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。而且，紫外線硬化性的寡聚物成分可列舉胺基甲酸酯系(urethane series)、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種寡聚物，較好的是其分子量為100~30000左右之範圍的化合物。紫外線硬化性單體成分或寡聚物成分的調配量可根據上述黏著劑層的種類來適當決定可降低黏著劑層之黏著力的量。通常情況下，相對於構成黏著劑的丙烯酸系聚合物等之基底聚合物100重量份，例如為5重量份~500重量份，較好的是40重量份~150重量份左右。
而且，紫外線硬化型黏著劑除了上述所說明之添加型紫外線硬化型黏著劑以外，亦可列舉使用了於聚合物側鏈或主鏈中或者主鏈末端具有碳-碳雙鍵的化合物作為基底聚合物的內在型紫外線硬化型黏著劑。內在型紫外線硬化型黏著劑無需包含作為低分子量成分的寡聚物成分等，或者多數情況下不包含上述成分等，因此寡聚物成分等並不隨時間於黏著劑中移動，可形成穩定的層結構的黏著劑層，故而較好。
上述具有碳-碳雙鍵的基底聚合物可無特別限制地使用具有碳-碳雙鍵且具有黏著性的化合物。此種基底聚合物較好的是以丙烯酸系聚合物為基本骨架的化合物。丙烯酸系聚合物的基本骨架可列舉上述例示的丙烯酸系聚合物。
於上述丙烯酸系聚合物中導入碳-碳雙鍵之導入法並無特別限制，可採用各種方法，但將碳-碳雙鍵導入至聚合物側鏈之方法容易進行分子設計(molecular design)。例如，可列舉如下方法：預先於丙烯酸系聚合物上共聚合具有官能基之單體，然後使具有可與此官能基反應的官能基以及碳-碳雙鍵的化合物以維持碳-碳雙鍵的紫外線硬化性的狀態下進行縮合或加成反應。
該些官能基之組合的例子可列舉羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。於該些官能基之組合中，就反應追蹤之容易度而言，較好的是羥基與異氰酸酯基之組合。而且，若是如藉由該些官能基之組合而生成上述具有碳-碳雙鍵的丙烯酸系聚合物的組合，則官能基可存在於丙烯酸系聚合物與上述化合物的任意一側，但於上述之較好組合中，較好的是丙烯酸系聚合物具有羥基且上述化合物具有異氰酸酯基的組合。於此情形時，具有碳-碳雙鍵的異氰酸酯化合物例如可列舉甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。而且，丙烯酸系聚合物可使用將上述例示的含羥基的單體或2-羥乙基乙烯基醚、4-羥丁基乙烯基醚、二乙二醇單乙烯醚的醚系化合物等進行共聚合 而成的化合物。
上述內在型紫外線硬化型黏著劑可單獨使用上述具有碳-碳雙鍵的基底聚合物(特別是丙烯酸系聚合物)，但亦可以不會使特性惡化的程度來調配上述紫外線硬化性單體成分或寡聚物成分。相對於基底聚合物100重量份，紫外線硬化性寡聚物成分等通常是30重量份的範圍內，較好的是0重量份~10重量份的範圍。
於上述紫外線硬化型黏著劑中，於利用紫外線等使其硬化時，含有光聚合起始劑。光聚合起始劑例如可列舉4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、茴香偶姻甲醚(anisoin methyl ether)等安息香醚系化合物；苄基二甲基縮酮(benzyl dimethyl ketal)等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙二酮-2-(鄰乙氧基羰基)肟(1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime)等光活性肟系化合物；二苯甲酮、苯甲醯基安息香酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮(thioxanthone)、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌 (camphoroquinone)；鹵化酮；醯基膦氧化物(acylphosphinoxyde)；醯基膦酸酯(acylphosphonate)等。相對於構成黏著劑的丙烯酸系聚合物等基底聚合物100重量份，光聚合起始劑的調配量例如為0.05重量份~20重量份左右。
而且，紫外線硬化型黏著劑例如可列舉日本專利特開昭60-196956號公報中所揭示的包含具有2個或2個以上不飽和鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、以及羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合起始劑的橡膠系黏著劑或丙烯酸系黏著劑等。
於上述黏著劑層12形成上述部分12a的方法可列舉如下方法：於基材11上形成紫外線硬化型的黏著劑層12之後，對上述部分12a部分性照射紫外線而使其硬化。部分性的紫外線照射可經由光罩(photomask)而進行，該光罩形成了與除半導體晶圓黏附部分13a'以外的部分13b'等相對應的圖案。而且，可列舉點狀地照射紫外線而使之硬化的方法等。紫外線硬化型的黏著劑層12的形成可藉由將設置於隔離膜上的黏著劑轉印於基材11上而進行。部分性的紫外線硬化亦可於設置於隔離膜上的紫外線硬化型的黏著劑層12中進行。
於切晶．黏晶膜3的黏著劑層12中，亦可對黏著劑層12的一部分照射紫外線，以使上述部分12a的黏著力小於其他部分12b的黏著力。即，使用基材11的至少單面的除 與半導體晶圓黏附部分13a'相對應的部分以外的部分的全部或一部分被遮光的基材，於其上形成紫外線硬化型黏著劑層12後照射紫外線，使與半導體晶圓黏附部分13a'相對應的部分硬化，從而可形成降低了黏著力的上述部分12a。遮光材料可利用印刷或蒸鍍等來製作可於支撐薄膜上成為光罩的材料。由此可有效率地製造本發明的切晶．黏晶膜3。
另外，於照射紫外線時產生氧所造成之硬化阻礙時，較理想的是將氧(空氣)自紫外線硬化型黏著劑層12之表面阻斷。其方法例如可列舉由隔離膜覆蓋黏著劑層12之表面的方法，或者於氮氣環境中進行紫外線等的紫外線照射的方法等。
黏著劑層12之厚度並無特別限定，但就同時實現晶片切割面的缺陷防止或接著劑層13的固定保持等觀點而言，較好的是1μm~50μm左右，更好的是2μm~30μm，特別好的是5μm~25μm。
上述接著劑層13、13'是具有接著功能的層，其構成材料可併用熱塑性樹脂與熱固性樹脂，亦可單獨使用熱塑性樹脂。
上述接著劑層13、13'的厚度方向的蕭氏A硬度較好的是10~60，更好的是15~55，特別好的是20~50。另外，蕭氏A硬度是依照JIS K 6253，於厚度為10mm、與試片的端部的距離為15mm的條件下使用A型硬度計(type A durometer)所測定的值。
上述熱塑性樹脂可列舉天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)或聚對苯二甲酸丁二酯(polybutylene terephthalate，PBT)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂或氟樹脂等。該些熱塑性樹脂可單獨使用，或者將2種或2種以上併用使用。於該些熱塑性樹脂中，特別好的是離子性雜質較少、耐熱性較高且可確保半導體元件之可靠性的丙烯酸系樹脂。
上述丙烯酸系樹脂並無特別限定，可列舉以具有碳數為30或30以下、特別是碳數為4~18的直鏈或支鏈之烷基的丙烯酸或甲基丙烯酸的酯的1種或者2種或2種以上為成分的聚合物等。上述烷基例如可列舉甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。
而且，形成上述聚合物的其他單體並無特別限定，例如可列舉如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等含羧基的單體；如馬來酸酐或衣康酸酐等酸酐單體；如(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯 酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂基酯或丙烯酸(4-羥甲基環己基)甲酯等含羥基的單體；如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙基酯或(甲基)丙烯醯氧基萘磺酸等含磺酸基的單體；或者如2-羥乙基丙烯醯基磷酸酯等各種含磷酸基的單體。
上述熱固性樹脂可列舉酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、矽氧樹脂或熱固性聚醯亞胺樹脂等。該些樹脂可單獨使用，或者將2種或2種以上併用使用。特別好的是會腐蝕半導體元件的離子性雜質等的含量較少的環氧樹脂。而且，環氧樹脂的硬化劑較好的是酚樹脂。
上述環氧樹脂若是通常用作接著劑組合物的化合物則並無特別限定，例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型(fluorene)、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四苯酚基乙烷(tetraphenylolethane)型等二官能環氧樹脂或多官能環氧樹脂，或者乙內醯脲型、三縮水甘油基異氰尿酸酯型或縮水甘油胺型等環氧樹脂。該些環氧樹脂可單獨使用，或者將2種或2種以上併用使用。於該些環氧樹脂中，特別好的是酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四苯酚基乙烷型環氧樹脂。其原因在於該些環 氧樹脂與作為硬化劑的酚樹脂的反應性高且耐熱性等優異。
另外，上述酚樹脂發揮作為上述環氧樹脂的硬化劑的作用，例如可列舉苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等的酚醛清漆型酚樹脂，可溶酚醛(resol)型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。該些酚樹脂可單獨使用，或者將2種或2種以上併用使用。於該些酚樹脂中，特別好的是苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於可提高半導體裝置的連接可靠性。
上述環氧樹脂與酚樹脂的調配比例，較好的是例如以相對於上述環氧樹脂成分中的環氧基每1當量，酚樹脂中的羥基成為0.5當量~2.0當量的方式調配。更好的是0.8當量~1.2當量。即，其原因在於：若兩者的調配比例超出上述範圍，則無法進行充分的硬化反應，環氧樹脂硬化物的特性容易劣化。
另外，於本實施形態中，特別好的是包含環氧樹脂、酚樹脂以及丙烯酸系樹脂的接著劑層13、13'。該些樹脂的離子性雜質較少且耐熱性較高，因此可確保半導體元件的可靠性。此時的調配比為如下：相對於丙烯酸系樹脂成分100重量份，環氧樹脂與酚樹脂的混合量為10重量份~200重量份。
本實施形態的接著劑層13、13'，為了預先進行某種程度的交聯，於製作時，亦可添加與聚合物的分子鏈末端 的官能基等反應的多官能性化合物作為交聯劑。藉此提高高溫下的接著特性，改善耐熱性。
上述交聯劑可採用先前眾所周知的化合物。特別是甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯的加成物等聚異氰酸酯化合物更好。較好的是相對於上述聚合物100重量份，交聯劑的添加量通常為0.05重量份~7重量份。若交聯劑的量多於7重量份，則接著力下降，故而欠佳。另一方面，若少於0.05重量份，則凝聚力不充分，故而欠佳。而且，與此類聚異氰酸酯化合物一起，亦可視需要一併包含環氧樹脂等其他多官能性化合物。
而且，於接著劑層13、13'中，可根據其用途適當調配無機填充劑。無機填充劑的調配可賦予導電性或者提高導熱性、以及調節彈性模數等。上述無機填充劑例如可列舉包含二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類，鋁、銅、銀、金、鎳、鉻、錫、鋅、鈀、焊錫等金屬或合金類，以及碳等的各種無機粉末。該些無機填充劑可單獨使用，或者將2種或2種以上併用使用。其中，較好地使用二氧化矽，特別是熔融二氧化矽。而且，無機填充劑的平均粒徑較好的是0.1μm~80μm的範圍內。
相對於有機樹脂成分100重量份，上述無機填充劑的調配量較好的是設定為0重量份~80重量份，更好的是設定為0重量份~70重量份。
另外，於接著劑層13、13'中，可視需要適當調配其他添加劑。其他添加劑例如可列舉阻燃劑、矽烷偶合劑(silane coupling agent)或離子捕捉劑(ion trapping agent)等。上述阻燃劑例如可列舉三氧化二銻、五氧化二銻、溴化環氧樹脂等。該些阻燃劑可單獨使用，或者將2種或2種以上併用使用。上述矽烷偶合劑，例如可列舉β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。該些矽烷偶合劑可單獨使用，或者將2種或2種以上併用使用。上述離子捕捉劑例如可列舉水滑石(hydrotalcite)類、氫氧化鉍等。該些離子捕捉劑可單獨使用，或者將2種或2種以上併用使用。
接著劑層13的厚度並無特別限定，例如為5μm~100μm左右，較好的是5μm~50μm左右。
可使切晶．黏晶膜3、3'具有抗靜電能力。藉此可防止於其接著時以及剝離時等時產生靜電或由此所造成的工件(work)(半導體晶圓等)帶電而破壞電路的情況等。抗靜電能力的賦予可利用如下適當方式來進行：對基材11、黏著劑層12或接著劑層13添加抗靜電劑或導電性物質的方法，以及對基材11附設包含電荷轉移錯合物(charge transfer complex)或金屬膜等的導電層等。該些方式較好的是難以產生存在使半導體晶圓變質之虞的雜質離子的方式。為了賦予導電性、提高導熱性等而調配的導電性物質(導電填料)，可列舉銀、鋁、金、銅、鎳、導電性合金等的球狀、 針狀、鱗片狀的金屬粉末，氧化鋁等金屬氧化物，非晶形碳黑(amorphous carbon black)、石墨等。但是，就不會漏電之方面而言，較好的是上述接著劑層13、13'為非導電性。
上述切晶．黏晶膜3、3'的接著劑層13、13'較好的是由隔離膜保護。隔離膜具有作為直至供於實用之前保護接著劑層13、13'的保護材料的功能。而且，隔離膜進一步可用作將接著劑層13、13'轉印於黏著劑層12時的支撐基材。隔離膜於切晶．黏晶膜的接著劑層13、13'上黏附工件時被剝落。隔離膜亦可使用藉由聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑而進行了表面塗層的塑膠薄膜或紙等。
其次，對使用本實施形態的薄膜卷1的半導體裝置的製造方法加以說明。首先，自上述薄膜卷1切割切晶．黏晶膜3並將其取出之後，剝離隔離膜。
接著，如圖4所示，於切晶．黏晶膜3之接著劑層13上壓接半導體晶圓21，將其接著保持而加以固定(黏貼步驟)。一面藉由壓接輥等擠壓機構進行擠壓一面進行本步驟。
接著，如圖5所示，對半導體晶圓21進行切晶。切晶是將半導體晶圓21切割為規定尺寸而分離，從而製作半導體晶片22的步驟。切晶是按照常法自例如半導體晶圓21的電路面側進行的。本步驟中所使用的切晶裝置並無特別限定，可使用先前眾所周知的裝置。而且，由於半導體 晶圓21被切晶．黏晶膜3接著固定，因此可抑制晶片缺陷或晶片飛散，並且亦可抑制半導體晶圓21破損。另外，切晶亦可切入到例如切割刀片(dicing blade)28到達黏著劑層12的程度為止。
其次，如圖6所示，進行切晶．黏晶膜3的延伸(expand)(參照圖6的(a)以及圖6的(b))。圖6的(a)是表示黏附於半導體晶圓21的切晶．黏晶膜3的延伸狀況的說明圖，圖6的(b)是表示多個半導體晶片22以及切晶環25接著固定於接著劑層13的狀況的平面圖。於接著劑層13上接著固定了藉由對半導體晶圓21進行切晶而形成的多個半導體晶片22。而且，於各半導體晶片22的形成區域的外側，切晶環25自接著固定了多個半導體晶片22的區域經由規定區域而接著固定於黏著劑層12。延伸是使用先前眾所周知的延伸裝置來進行的。延伸裝置包含可經由切晶環25而將切晶．黏晶膜3擠壓至下方的圓環狀的外環26，以及直徑小於此外環26且支撐切晶．黏晶膜3的內環27。
延伸是如下所述進行的。首先，使外環26以可供切晶．黏晶膜3插入的程度，隔著充分的距離位於內環27的上方。其次，於外環26與內環27之間，插入接著固定有半導體晶片22以及切晶環25的切晶．黏晶膜3。此時，以接著固定有半導體晶片22的區域位於內環27的中央部的方式進行設置。其後，外環26沿著內環27移動至下方，同時將切晶環25擠下去。藉由擠下切晶環25，而使切晶．黏晶膜3由於切晶環與內環的高度差而被拉伸，從而進行 延伸。延伸的目的在於：防止於拾取時半導體晶片22彼此接觸而破損。
接著，為了將接著固定於切晶．黏晶膜3上的半導體晶片22剝離，進行半導體晶片22的拾取。拾取的方法並無特別限定，可採用先前眾所周知的各種方法。例如可列舉自切晶．黏晶膜3側利用針(needle)挑出各個半導體晶片22，並利用拾取裝置來拾取已挑出的半導體晶片22的方法等。
如圖7所示，所拾取的半導體晶片22經由接著劑層13而接著固定於被黏接體23上(晶粒黏著)。被黏接體23載置於加熱板(heat block)上。本實施形態的接著劑層13可抑制捲繞痕跡所引起的階差的產生，因此此晶粒黏著可確保對於被黏接體23的充分的密著性而進行。其結果，可將半導體晶片22良好地接著於被黏接體23上。晶粒黏著的條件並無特別限定，可視需要而適當設定。被黏接體23可列舉導線架(lead frame)、捲帶式自動接合(tape automated bonding，TAB)薄膜、基板或另行製作的半導體晶片等。被黏接體23例如可以是如容易變形的變形型被黏接體，也可以是難以變形的非變形型被黏接體(半導體晶圓等)。
上述基板可使用先前眾所周知的基板。而且，上述導線架可使用Cu導線架、42合金(alloy)導線架等金屬導線架或包含玻璃環氧化物(glass epoxy)、雙馬來醯亞胺三嗪(bismaleimide triazine，BT)、聚醯亞胺等的有機基板。然而，本發明並不限定於此，亦包含黏貼半導體晶片且可與 半導體晶片電性連接而使用的電路基板。
當接著劑層13為熱硬化型時，藉由加熱硬化而將半導體晶片22接著固定於被黏接體23上，使耐熱強度提高。另外，經由接著劑層13而將半導體晶片22接著固定於基板等而成者可供於回焊(reflow)步驟。其後，進行將基板的端子部(內部引線(inner lead))的前端與半導體晶片22上的電極墊(electrode pad)(未圖示)利用接線(bonding wire)29而電性連接的焊線接合(wire bonding)，進一步以密封樹脂30密封半導體晶片，並使此密封樹脂30後硬化(after cure)。藉此製作本實施形態的半導體裝置。
如上所述，於自本實施形態的薄膜捲取出的切晶．黏晶膜中，接著劑層13中產生捲繞痕跡所引起的階差得到抑制，因此可不會使半導體晶片22自被黏接體23脫落而良好地接著。其結果，藉由將本實施形態的切晶．黏晶膜適用於半導體裝置的製造，可提高半導體裝置的製造良率。
實驗例
以下，舉例詳細說明此發明的較佳實驗例。但是，此實驗例所揭示的材料或調配量等，只要無特別限定性的揭示，則本發明的範圍並不限定於該些材料或調配量等，僅僅是說明例。
(實驗例1)
使相對於以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯系聚合物(根上工業股份有限公司製造，Paracron W-197CM)100重量份，多官能異氰酸酯系交聯劑3重量 份、環氧樹脂(日本環氧樹脂股份有限公司製造，Epikote 1004)23重量份、酚樹脂(三井化學股份有限公司製造，Milex XLC-LL)6重量份、球狀二氧化矽(Admatechs股份有限公司製造，S0-25R)60重量份溶解於甲基乙基酮中，製備出濃度為20重量百分比(wt%)的接著劑組合物溶液。
將此接著劑組合物溶液塗佈於包含作為剝離襯墊(release liner)的經聚矽氧脫模處理的聚對苯二甲酸乙二酯薄膜(厚度50μm)的脫模處理薄膜(核心材料(core material))上，以120℃使之乾燥3分鐘。藉此於脫模處理薄膜上形成厚度為25μm的接著劑層。
其次，於厚度為100μm的包含聚烯烴薄膜的基材上，塗佈丙烯酸系黏著劑組合物溶液並使之乾燥，形成厚度為7μm的黏著劑層而製作出切晶膜(日東電工股份有限公司製造，MD-107G)。
另外，上述丙烯酸系黏著劑的溶液以如下方式進行製備。即，首先使丙烯酸丁酯、丙烯酸乙酯、丙烯酸-2-羥基乙酯(2-hydroxyethyl acrylate)及丙烯酸以重量比60/40/4/1的比例進行共聚合，獲得重量平均分子量為800,000的丙烯酸系聚合物。其次，於此丙烯酸系聚合物100重量份中，調配作為交聯劑之多官能環氧系交聯劑0.5重量份、作為光聚合性化合物之二季戊四醇單羥基五丙烯酸酯(dipentaerythritol monohydroxy pentacrylate)90重量份、作為光聚合起始劑之α-羥基環己基苯基酮5重量份，使該些化合物均勻地溶解於作為有機溶劑的甲苯中。藉此製作出 上述丙烯酸系黏著劑的溶液。
接著，將脫模處理薄膜上的接著劑層剪切出直徑為330mm的圓形狀，將此圓形狀的接著劑層黏合於上述切晶膜的黏著劑層上。黏合條件為如下所述：層壓溫度為40℃，線壓(line pressure)為3.0kgf/cm。藉此製作出本實驗例的切晶．黏晶膜。
接著，將300張上述切晶．黏晶膜捲繞於直徑為3吋(7.62cm)的卷芯上。使對此時的切晶．黏晶膜所施加的捲繞張力為25N/m。而且，捲繞後的薄膜卷的直徑為18.0cm。
(實驗例2)
於本實驗例2中，使用直徑為6吋(15.24cm)的卷芯來替代直徑為3吋(7.62cm)的卷芯，除此以外，以與上述實驗例1相同之方式製作出本實驗例的薄膜卷。
(實驗例3)
於本實驗例3中，將50張切晶．黏晶膜捲繞於直徑為3吋(7.62cm)的卷芯上，且使捲繞後的薄膜卷的直徑為11.3cm，除此以外，以與上述實驗例1相同之方式製作出本實驗例的薄膜卷。
(實驗例4)
於本實驗例4中，將400張切晶．黏晶膜捲繞於直徑為3吋(7.62cm)的卷芯，且使捲繞後的薄膜卷的直徑為19.0cm，除此以外，以與上述實驗例1相同之方式製作出本實驗例的薄膜卷。
(比較例1)
於本比較例1中，使用直徑為2吋(5.08cm)的卷芯來替代直徑為3吋(7.62cm)的卷芯，除此以外，以與上述實驗例1相同之方式製作出本比較例的薄膜卷。
(比較例2)
於本比較例2中，將450張切晶．黏晶膜捲繞於直徑為3吋(7.62cm)的卷芯上，且使捲繞後的薄膜卷的直徑為20.0cm，除此以外，以與上述實驗例1相同之方式製作出本比較例的薄膜卷。
(捲繞痕跡的確認)
將上述各實驗例以及比較例中製作的薄膜卷分別於製作後保管1個月。設定保管條件為溫度25℃、相對濕度50%Rh。於保管後，自卷芯取出5張最近的切晶．黏晶膜。對於此切晶．黏晶膜，於其接著劑層上黏貼鏡面晶圓(mirror wafer)(厚度為760μm)。黏貼條件如下所述。
[黏合條件]
黏附裝置：日東精機製造，MA-3000III
黏附速度：10mm/sec
黏附壓力：0.15MPa
黏附時的平台溫度：60℃
於黏貼後，確認於鏡面晶圓中是否產生切晶．黏晶膜的捲繞痕跡所引起的階差。將結果示於下述表1。
(蕭氏A硬度的測定)
蕭氏A硬度的測定是依照JIS K 6253，於厚度為10mm、與試片的端部的距離為15mm的條件下使用A型硬 度計來進行的。
(結果)
如下述表1所明示，於使用實驗例1~實驗例4的切晶．黏晶膜而黏貼的鏡面晶圓中，完全看不到此薄膜的捲繞痕跡所引起的階差，故確認到良好的外觀。另一方面，於比較例1以及比較例2的切晶．黏晶膜中，確認到鏡面晶圓中產生階差。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1‧‧‧半導體裝置製造用薄膜卷
2‧‧‧卷芯
3、3'‧‧‧切晶．黏晶膜(半導體裝置製造用薄膜)
11‧‧‧基材
12‧‧‧黏著劑層
12a‧‧‧部分
12b‧‧‧部分
13、13'‧‧‧接著劑層
13a'‧‧‧半導體晶圓黏附部分
13b'‧‧‧除半導體晶圓黏附部分13a'以外的部分
21‧‧‧半導體晶圓
22‧‧‧半導體晶片
23‧‧‧被黏接體
25‧‧‧切晶環
26‧‧‧外環
27‧‧‧內環
28‧‧‧切割刀片
30‧‧‧密封樹脂
29‧‧‧接線
r‧‧‧直徑
圖1是表示本發明的一實施形態的半導體裝置製造用薄膜卷的立體圖。
圖2是表示上述實施形態的半導體裝置製造用薄膜(切晶．黏晶膜)的積層結構的剖面示意圖。
圖3是表示上述實施形態的其他半導體裝置製造用薄 膜(切晶．黏晶膜)的積層結構的剖面示意圖。
圖4是表示於本發明的一實施形態的切晶．黏晶膜上黏貼半導體晶圓的狀況的說明圖。
圖5是表示對上述半導體晶圓進行切晶的狀況的立體圖。
圖6的(a)是表示黏附於半導體晶圓的上述切晶．黏晶膜的延伸狀況的說明圖，圖6的(b)是表示半導體晶片以及切晶環接著固定於切晶．黏晶膜的狀況的平面圖。
圖7是表示經由上述切晶．黏晶膜中的接著劑層而安裝有半導體晶片的例子的剖面示意圖。
1‧‧‧半導體裝置製造用薄膜卷
2‧‧‧卷芯
3‧‧‧切晶．黏晶膜(半導體裝置製造用薄膜)
r‧‧‧直徑

Claims (7)

  1. 一種半導體裝置製造用薄膜卷，其是將半導體裝置製造用薄膜以卷狀捲繞於圓柱狀的卷芯上而成，上述卷芯的直徑為7.5cm~15.5cm的範圍內，上述薄膜卷具有於基材上依序積層有黏著劑層、接著劑層以及隔離膜的結構，且上述接著劑層的厚度方向中的蕭氏A硬度為10~60，其厚度為1μm~500μm。
  2. 如申請專利範圍第1項所述之半導體裝置製造用薄膜卷，其中上述半導體裝置製造用薄膜於被施加20N/m~100N/m的範圍內的捲繞張力的狀態下捲繞於卷芯上。
  3. 如申請專利範圍第1項或第2項所述之半導體裝置製造用薄膜卷，其中半導體裝置製造用薄膜卷的直徑為8cm~30cm的範圍內。
  4. 如申請專利範圍第1項所述之半導體裝置製造用薄膜卷，其中上述接著劑層包含熱塑性樹脂以及無機填充劑。
  5. 如申請專利範圍第1項所述之半導體裝置製造用薄膜卷，其中上述接著劑層包含熱固性樹脂以及熱塑性樹脂。
  6. 如申請專利範圍第4項或第5項所述之半導體裝置製造用薄膜卷，其中上述熱塑性樹脂是丙烯酸系樹脂。
  7. 如申請專利範圍第5項所述之半導體裝置製造用薄膜卷，其中上述熱固性樹脂是環氧樹脂或酚樹脂的至少任一種。
TW098140867A 2008-12-01 2009-11-30 半導體裝置製造用薄膜卷 TWI415774B (zh)

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CN102227482B (zh) 2015-05-06
CN103725215A (zh) 2014-04-16
JP5322609B2 (ja) 2013-10-23
KR20110097798A (ko) 2011-08-31
WO2010064376A1 (ja) 2010-06-10
TW201028348A (en) 2010-08-01
CN102227482A (zh) 2011-10-26
JP2010126716A (ja) 2010-06-10
US20120104134A1 (en) 2012-05-03

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