JP2010177699A - ダイシング・ダイボンドフィルム - Google Patents
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Abstract
【解決手段】基材上に粘着剤層を有するダイシングフィルムと、粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムであって、粘着剤層は、主モノマーとしてのアクリル酸エステルと、アクリル酸エステルに対し含有量が10〜40モル%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマーに対し含有量が70〜90モル%の範囲内のラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物とを含むポリマーを含み構成され、かつ、基材上に成膜された後に所定条件下で紫外線照射されたものであり、ダイボンドフィルムはエポキシ樹脂を含み構成され、かつ、紫外線照射後の粘着剤層に対し貼り合わされたものである。
【選択図】 図1
Description
本発明の実施の形態について、図1及び図2を参照しながら説明する。図1は、本実施の形態に係るダイシング・ダイボンドフィルムを示す断面模式図である。図2は、本実施の形態に係る他のダイシング・ダイボンドフィルムを示す断面模式図である。但し、説明に不要な部分は省略し、また、説明を容易にする為に拡大又は縮小等して図示した部分がある。
次に、本発明のダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
本発明のダイシング・ダイボンドフィルム11を用いた半導体装置の製造方法について、図3を参照しながら説明する。
<ダイシングフィルムの作製>
冷却管、窒素導入管、温度計および撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(以下、「2EHA」という。)88.8部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」という。)11.2部、過酸化ベンゾイル0.2部及びトルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量85万のアクリル系ポリマーAを得た。重量平均分子量は下記の通りである。2EHAとHEAとのモル比は、100mol対20molとした。
紫外線(UV)照射装置:高圧水銀灯
紫外線照射積算光量:500mJ/cm2
出力:75W
照射強度150mW/cm2
尚、紫外線照射は粘着剤層前駆体に対し直接照射した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、商品名;パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)59部、エポキシ樹脂2(JER(株)製、エピコート827)53部、フェノール樹脂(三井化学(株)製、商品名:ミレックスXLC−4L)121部、球状シリカ(アドマテックス(株)製、商品名;SO−25R)222部をメチルエチルケトンに溶解して、濃度23.6重量%となる様に調製した。
重量平均分子量Mwの測定は、GPC(ゲル・パーミエーション・クロマトグラフィー)により行った。測定条件は下記の通りである。尚、重量平均分子量はポリスチレン換算により算出した。
測定装置:HLC−8120GPC(製品名、東ソー社製)
カラム:TSKgel GMH−H(S)×2(品番、東ソー社製)
流量:0.5ml/min
注入量:100μl
カラム温度:40℃
溶離液:THF
注入試料濃度:0.1重量%
検出器:示差屈折計
各実施例2〜14については、下記表1に示す組成及び含有量に変更したこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
2EHA:アクリル酸2−エチルヘキシル
i−OA:アクリル酸イソオクチル
i−NA:アクリル酸イソノニル
BA:アクリル酸n−ブチル
AA:アクリル酸
HEA:2−ヒドロキシエチルアクリレート
4HBA:4−ヒドロキシブチルアクリレート
AOI:2−アクリロイルオキシエチルイソシアネート
C/L:ポリイソシアネート化合物(商品名「コロネートL」、日本ポリウレタン(株)製)
T/C:エポキシ系架橋剤(商品名「テトラッドC」、三菱ガス化学社製)
各比較例1〜7については、下記表2に示す組成及び含有量に変更したこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。また、比較例8については、下記表2に示す組成及び含有量に変更し、かつ、ダイボンドフィルムの貼り合わせ前の紫外線照射を実施しないこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.15mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.215mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:1.0mm角
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行った後にピックアップを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.075mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.170mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:10.0mm角
ピックアップ条件については、下記表3に示す条件A及び条件Bによりそれぞれ行った。
測定条件として、サンプルサイズとして初期長さ10mm、断面積0.1〜0.5mm2にし、測定温度23℃、チャック間距離50mm、引張速度50mm/minでMD方向又はTD方向に引張試験を行い、各方向に於けるサンプルの伸びの変化量(mm)を測定した。その結果、得られたS−S曲線の初期の立ち上がりの部分に接線を引き、その接線が100%伸びに相当するときの引張強度を基材フィルムの断面積で割り、引張弾性率とした。尚、紫外線照射後の引張弾性率の測定については、前記照射条件により紫外線をポリオレフィンフィルム側から照射した後に行った。
ダイシングフィルムをダイシングリングから剥がし、ダイシングリングに糊残りが発生しているか否かを目視により確認した。糊残りが確認されたものを×とし、確認されなかったものを○とした。
各ダイシング・ダイボンドフィルムから幅10mmのサンプル片を切り出し、これを40℃のホットプレート上に載置されたシリコンミラーウエハに貼り付けた。約30分間放置して、引張試験機を用い引き剥がし粘着力を測定した。測定条件は、剥離角度:15°、引張速度:300mm/minとした。尚、サンプル片の保存及び引き剥がし粘着力の測定は、温度23℃、相対湿度50%の環境下で行った。
2 粘着剤層
3 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
10、11 ダイシング・ダイボンドフィルム
Claims (11)
- 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムであって、
前記粘着剤層は、主モノマーとしてのアクリル酸エステルと、アクリル酸エステルに対し含有量が10〜40mol%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマーに対し含有量が70〜90mol%の範囲内のラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物とを含むポリマーを含み構成され、かつ、所定条件下での紫外線照射により硬化されたものであり、
前記ダイボンドフィルムはエポキシ樹脂を含み構成され、かつ、紫外線照射後の粘着剤層に対し貼り合わされたものであることを特徴とするダイシング・ダイボンドフィルム。 - 前記紫外線の照射は30〜1000mJ/cm2の範囲内で行われることを特徴とする請求項1に記載のダイシング・ダイボンドフィルム。
- 前記アクリル酸エステルは、CH2=CHCOOR(式中、Rは炭素数が6〜10のアルキル基である。)であることを特徴とする請求項1又は2に記載のダイシング・ダイボンドフィルム。
- 前記ヒドロキシル基含有モノマーは、(メタ)アクリル酸2−ヒドロキシエチル、(メタ)アクリル酸2−ヒドロキシプロピル、(メタ)アクリル酸4−ヒドロキシブチル、(メタ)アクリル酸6−ヒドロキシヘキシル、(メタ)アクリル酸8−ヒドロキシオクチル、(メタ)アクリル酸10−ヒドロキシデシル、(メタ)アクリル酸12−ヒドロキシラウリル、及び(4−ヒドロキシメチルシクロヘキシル)メチル(メタ)アクリレートからなる群より選択される少なくとも何れか1種であることを特徴とする請求項1〜3の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記ラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物は、2−メタクリロイルオキシエチルイソシアネート又は2−アクリロイルオキシエチルイソシアネートの少なくとも何れかであることを特徴とする請求項1〜4の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記ポリマーの重量平均分子量は、35万〜100万の範囲内であることを特徴とする請求項1〜5の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記粘着剤層の紫外線照射後の23℃における引張弾性率が7〜170MPaの範囲内であることを特徴とする請求項1〜6の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記粘着剤層はアクリル酸を含まないことを特徴とする請求項1〜7の何れか1項に記載のダイシング・ダイボンドフィルム。
- 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムの製造方法であって、
主モノマーとしてのアクリル酸エステルと、アクリル酸エステルに対し含有量が10〜40mol%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマーに対し含有量が70〜90mol%の範囲内のラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物とを含むポリマーを含み構成される粘着剤層前駆体を前記基材上に形成する工程と、
前記粘着剤層前駆体に所定条件下で紫外線を照射して前記粘着剤層を形成する工程と、
前記粘着剤層上に前記ダイボンドフィルムを貼り合わせる工程とを有することを特徴とするダイシング・ダイボンドフィルムの製造方法。 - 前記紫外線の照射は30〜1000mJ/cm2の範囲内で行うことを特徴とする請求項9に記載のダイシング・ダイボンドフィルムの製造方法。
- 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムを用いた半導体装置の製造方法であって、
請求項1〜8に記載のダイシング・ダイボンドフィルムを用意し、
前記ダイボンドフィルム上に半導体ウェハを圧着する工程と、
前記半導体ウェハを前記ダイボンドフィルムと共にダイシングすることにより半導体チップを形成する工程と、
前記半導体チップを前記ダイボンドフィルムと共に、前記粘着剤層から剥離する工程とを含み、
前記半導体ウェハの圧着工程から半導体チップの剥離工程までは、前記粘着剤層に紫外線を照射することなく行うことを特徴とする半導体装置の製造方法。
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