TWI445047B - A substrate processing apparatus, a substrate processing condition changing method, and a memory medium - Google Patents

A substrate processing apparatus, a substrate processing condition changing method, and a memory medium Download PDF

Info

Publication number
TWI445047B
TWI445047B TW096106879A TW96106879A TWI445047B TW I445047 B TWI445047 B TW I445047B TW 096106879 A TW096106879 A TW 096106879A TW 96106879 A TW96106879 A TW 96106879A TW I445047 B TWI445047 B TW I445047B
Authority
TW
Taiwan
Prior art keywords
processing
substrate
unit
wafer
substrate processing
Prior art date
Application number
TW096106879A
Other languages
English (en)
Chinese (zh)
Other versions
TW200739668A (en
Inventor
橫內健
八木文子
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200739668A publication Critical patent/TW200739668A/zh
Application granted granted Critical
Publication of TWI445047B publication Critical patent/TWI445047B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
TW096106879A 2006-02-28 2007-02-27 A substrate processing apparatus, a substrate processing condition changing method, and a memory medium TWI445047B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006053670A JP4900904B2 (ja) 2006-02-28 2006-02-28 基板処理装置、基板処理条件変更方法及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200739668A TW200739668A (en) 2007-10-16
TWI445047B true TWI445047B (zh) 2014-07-11

Family

ID=38555101

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106879A TWI445047B (zh) 2006-02-28 2007-02-27 A substrate processing apparatus, a substrate processing condition changing method, and a memory medium

Country Status (4)

Country Link
JP (1) JP4900904B2 (enExample)
KR (1) KR100874278B1 (enExample)
CN (1) CN101030525A (enExample)
TW (1) TWI445047B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8369975B2 (en) * 2007-09-21 2013-02-05 Fisher-Rosemount Systems, Inc. Online recipe synchronization in a real-time batch executive environment
JP5511190B2 (ja) * 2008-01-23 2014-06-04 株式会社荏原製作所 基板処理装置の運転方法
KR100986805B1 (ko) * 2008-11-21 2010-10-11 에코피아 주식회사 온도 가변형 프로브 스테이션
JP6126248B2 (ja) 2014-01-20 2017-05-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6380887B2 (ja) * 2014-03-19 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6598242B2 (ja) * 2015-08-19 2019-10-30 芝浦メカトロニクス株式会社 基板処理装置、および基板処理方法
US20210362290A1 (en) * 2018-07-09 2021-11-25 Tokyo Electron Limited Processing apparatus, processing method and computer- readable recording medium
JP7161896B2 (ja) * 2018-09-20 2022-10-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
JP7680911B2 (ja) * 2021-08-27 2025-05-21 Ｓｐｐテクノロジーズ株式会社 基板処理装置および基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723764B2 (ja) * 1992-09-01 1998-03-09 株式会社日立製作所 半導体製造装置の停電処理装置
JPH09134857A (ja) * 1995-11-09 1997-05-20 Kokusai Electric Co Ltd 半導体製造における異常対策処理方法
JP3771347B2 (ja) * 1997-03-19 2006-04-26 株式会社日立製作所 真空処理装置及び真空処理方法
JP2004319961A (ja) * 2003-03-31 2004-11-11 Tokyo Electron Ltd 基板処理装置、基板処理方法、及び該方法を実行するプログラム

Also Published As

Publication number Publication date
CN101030525A (zh) 2007-09-05
KR20070089604A (ko) 2007-08-31
JP2007234809A (ja) 2007-09-13
TW200739668A (en) 2007-10-16
KR100874278B1 (ko) 2008-12-17
JP4900904B2 (ja) 2012-03-21

Similar Documents

Publication Publication Date Title
TWI445047B (zh) A substrate processing apparatus, a substrate processing condition changing method, and a memory medium
TWI453787B (zh) Substrate processing device, substrate processing condition review method
US7736942B2 (en) Substrate processing apparatus, substrate processing method and storage medium
US7266418B2 (en) Substrate processing apparatus, history information recording method, history information recording program, and history information recording system
CN101933122A (zh) 负载锁定装置和基板冷却方法
JP5003315B2 (ja) 基板処理装置及び基板処理方法並びに記憶媒体
JP4279102B2 (ja) 基板処理装置及び基板処理方法
WO2007126016A1 (ja) 膜位置調整方法、記憶媒体及び基板処理システム
US20110224818A1 (en) Substrate processing apparatus, method for modifying substrate processing conditions and storage medium
US7525650B2 (en) Substrate processing apparatus for performing photolithography
TW202101650A (zh) 半導體裝置的製造方法、基板處理裝置及記錄媒體
JP5243205B2 (ja) 基板処理装置
JP4961893B2 (ja) 基板搬送装置及び基板搬送方法
KR20230000790A (ko) 지지 유닛, 이를 포함하는 베이크 장치 및 기판 처리 장치
JP2015026754A (ja) 基板処理装置及びその制御方法、並びにプログラム
JP6990297B2 (ja) 部品の診断方法、半導体装置の製造方法、基板処理装置、及びプログラム
US7824934B2 (en) Substrate processing apparatus, parameter management system for substrate processing apparatus, parameter management method for substrate processing apparatus, program, and storage medium
JP4900903B2 (ja) 基板処理装置、基板処理装置のパラメータ管理システム、基板処理装置のパラメータ管理方法、プログラム、及び記憶媒体
JP2011210814A (ja) 基板処理ユニット、基板処理方法および基板処理装置
JP2003115426A (ja) 基板処理装置および基板処理システム
CN118231287A (zh) 衬底处理装置和包括该衬底处理装置的半导体制造设备
TW202443656A (zh) 基板處理裝置、清潔方法、基板處理方法、半導體裝置之製造方法及程式
JP2022104883A (ja) 基板処理装置及び基板処理方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees