KR100874278B1 - 기판 처리 장치, 기판 처리 조건 변경 방법 및 기억 매체 - Google Patents

기판 처리 장치, 기판 처리 조건 변경 방법 및 기억 매체 Download PDF

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Publication number
KR100874278B1
KR100874278B1 KR1020070018840A KR20070018840A KR100874278B1 KR 100874278 B1 KR100874278 B1 KR 100874278B1 KR 1020070018840 A KR1020070018840 A KR 1020070018840A KR 20070018840 A KR20070018840 A KR 20070018840A KR 100874278 B1 KR100874278 B1 KR 100874278B1
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KR
South Korea
Prior art keywords
processing
substrate
unit
recipe
wafer
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Expired - Fee Related
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KR1020070018840A
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English (en)
Korean (ko)
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KR20070089604A (ko
Inventor
다케시 요코우치
후미코 야기
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20070089604A publication Critical patent/KR20070089604A/ko
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Publication of KR100874278B1 publication Critical patent/KR100874278B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070018840A 2006-02-28 2007-02-26 기판 처리 장치, 기판 처리 조건 변경 방법 및 기억 매체 Expired - Fee Related KR100874278B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00053670 2006-02-28
JP2006053670A JP4900904B2 (ja) 2006-02-28 2006-02-28 基板処理装置、基板処理条件変更方法及び記憶媒体

Publications (2)

Publication Number Publication Date
KR20070089604A KR20070089604A (ko) 2007-08-31
KR100874278B1 true KR100874278B1 (ko) 2008-12-17

Family

ID=38555101

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070018840A Expired - Fee Related KR100874278B1 (ko) 2006-02-28 2007-02-26 기판 처리 장치, 기판 처리 조건 변경 방법 및 기억 매체

Country Status (4)

Country Link
JP (1) JP4900904B2 (enExample)
KR (1) KR100874278B1 (enExample)
CN (1) CN101030525A (enExample)
TW (1) TWI445047B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8369975B2 (en) 2007-09-21 2013-02-05 Fisher-Rosemount Systems, Inc. Online recipe synchronization in a real-time batch executive environment
JP5511190B2 (ja) * 2008-01-23 2014-06-04 株式会社荏原製作所 基板処理装置の運転方法
KR100986805B1 (ko) * 2008-11-21 2010-10-11 에코피아 주식회사 온도 가변형 프로브 스테이션
US10541163B2 (en) 2014-01-20 2020-01-21 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
JP6380887B2 (ja) * 2014-03-19 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6598242B2 (ja) * 2015-08-19 2019-10-30 芝浦メカトロニクス株式会社 基板処理装置、および基板処理方法
JP7042340B2 (ja) * 2018-07-09 2022-03-25 東京エレクトロン株式会社 加工装置、加工方法及びコンピュータ記憶媒体
JP7161896B2 (ja) * 2018-09-20 2022-10-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
JP7680911B2 (ja) * 2021-08-27 2025-05-21 Ｓｐｐテクノロジーズ株式会社 基板処理装置および基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723764B2 (ja) * 1992-09-01 1998-03-09 株式会社日立製作所 半導体製造装置の停電処理装置
JPH09134857A (ja) * 1995-11-09 1997-05-20 Kokusai Electric Co Ltd 半導体製造における異常対策処理方法
JP3771347B2 (ja) * 1997-03-19 2006-04-26 株式会社日立製作所 真空処理装置及び真空処理方法
JP2004319961A (ja) * 2003-03-31 2004-11-11 Tokyo Electron Ltd 基板処理装置、基板処理方法、及び該方法を実行するプログラム

Also Published As

Publication number Publication date
CN101030525A (zh) 2007-09-05
TWI445047B (zh) 2014-07-11
JP4900904B2 (ja) 2012-03-21
JP2007234809A (ja) 2007-09-13
KR20070089604A (ko) 2007-08-31
TW200739668A (en) 2007-10-16

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