CN101030525A - 基板处理装置、基板处理条件变更方法和存储介质 - Google Patents

基板处理装置、基板处理条件变更方法和存储介质 Download PDF

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Publication number
CN101030525A
CN101030525A CNA2007100791296A CN200710079129A CN101030525A CN 101030525 A CN101030525 A CN 101030525A CN A2007100791296 A CNA2007100791296 A CN A2007100791296A CN 200710079129 A CN200710079129 A CN 200710079129A CN 101030525 A CN101030525 A CN 101030525A
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CN
China
Prior art keywords
processing
substrate
unit
substrate processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100791296A
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English (en)
Chinese (zh)
Inventor
横内健
八木文子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101030525A publication Critical patent/CN101030525A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNA2007100791296A 2006-02-28 2007-02-14 基板处理装置、基板处理条件变更方法和存储介质 Pending CN101030525A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006053670A JP4900904B2 (ja) 2006-02-28 2006-02-28 基板処理装置、基板処理条件変更方法及び記憶媒体
JP2006053670 2006-02-28

Publications (1)

Publication Number Publication Date
CN101030525A true CN101030525A (zh) 2007-09-05

Family

ID=38555101

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100791296A Pending CN101030525A (zh) 2006-02-28 2007-02-14 基板处理装置、基板处理条件变更方法和存储介质

Country Status (4)

Country Link
JP (1) JP4900904B2 (enExample)
KR (1) KR100874278B1 (enExample)
CN (1) CN101030525A (enExample)
TW (1) TWI445047B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101494164B (zh) * 2008-01-23 2016-04-06 株式会社荏原制作所 基板处理装置的运转方法及基板处理装置
CN112352303A (zh) * 2018-07-09 2021-02-09 东京毅力科创株式会社 加工装置、加工方法以及计算机存储介质

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8369975B2 (en) * 2007-09-21 2013-02-05 Fisher-Rosemount Systems, Inc. Online recipe synchronization in a real-time batch executive environment
KR100986805B1 (ko) * 2008-11-21 2010-10-11 에코피아 주식회사 온도 가변형 프로브 스테이션
JP6126248B2 (ja) 2014-01-20 2017-05-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6380887B2 (ja) * 2014-03-19 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6598242B2 (ja) * 2015-08-19 2019-10-30 芝浦メカトロニクス株式会社 基板処理装置、および基板処理方法
JP7161896B2 (ja) * 2018-09-20 2022-10-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
JP7680911B2 (ja) * 2021-08-27 2025-05-21 Ｓｐｐテクノロジーズ株式会社 基板処理装置および基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723764B2 (ja) * 1992-09-01 1998-03-09 株式会社日立製作所 半導体製造装置の停電処理装置
JPH09134857A (ja) * 1995-11-09 1997-05-20 Kokusai Electric Co Ltd 半導体製造における異常対策処理方法
JP3771347B2 (ja) * 1997-03-19 2006-04-26 株式会社日立製作所 真空処理装置及び真空処理方法
JP2004319961A (ja) * 2003-03-31 2004-11-11 Tokyo Electron Ltd 基板処理装置、基板処理方法、及び該方法を実行するプログラム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101494164B (zh) * 2008-01-23 2016-04-06 株式会社荏原制作所 基板处理装置的运转方法及基板处理装置
CN112352303A (zh) * 2018-07-09 2021-02-09 东京毅力科创株式会社 加工装置、加工方法以及计算机存储介质
CN112352303B (zh) * 2018-07-09 2024-04-09 东京毅力科创株式会社 加工装置、加工方法以及计算机存储介质

Also Published As

Publication number Publication date
TWI445047B (zh) 2014-07-11
KR20070089604A (ko) 2007-08-31
JP2007234809A (ja) 2007-09-13
TW200739668A (en) 2007-10-16
KR100874278B1 (ko) 2008-12-17
JP4900904B2 (ja) 2012-03-21

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