TWI442398B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI442398B TWI442398B TW096148787A TW96148787A TWI442398B TW I442398 B TWI442398 B TW I442398B TW 096148787 A TW096148787 A TW 096148787A TW 96148787 A TW96148787 A TW 96148787A TW I442398 B TWI442398 B TW I442398B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- circuit
- semiconductor device
- film
- battery
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 150
- 239000000758 substrate Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 238000003860 storage Methods 0.000 claims description 39
- 230000002950 deficient Effects 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 230000014759 maintenance of location Effects 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000007773 negative electrode material Substances 0.000 claims description 13
- 239000007774 positive electrode material Substances 0.000 claims description 13
- -1 nickel metal hydride Chemical class 0.000 claims description 11
- 239000007784 solid electrolyte Substances 0.000 claims description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052987 metal hydride Inorganic materials 0.000 claims description 5
- 230000004044 response Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 372
- 239000010410 layer Substances 0.000 description 114
- 239000000463 material Substances 0.000 description 73
- 239000012535 impurity Substances 0.000 description 60
- 239000010409 thin film Substances 0.000 description 30
- 229910052782 aluminium Inorganic materials 0.000 description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 28
- 239000010936 titanium Substances 0.000 description 25
- 239000010949 copper Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 239000010937 tungsten Substances 0.000 description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 15
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- 239000011733 molybdenum Substances 0.000 description 15
- 239000002356 single layer Substances 0.000 description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 229910052735 hafnium Inorganic materials 0.000 description 12
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 229910000449 hafnium oxide Inorganic materials 0.000 description 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 11
- 238000009413 insulation Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000002216 antistatic agent Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 229910052727 yttrium Inorganic materials 0.000 description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005674 electromagnetic induction Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007646 gravure printing Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- 229910015645 LiMn Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- CFTFRNVHBXMNKE-UHFFFAOYSA-N aluminum iridium Chemical compound [Al].[Ir] CFTFRNVHBXMNKE-UHFFFAOYSA-N 0.000 description 2
- DRVLHCMOXCBPHN-UHFFFAOYSA-N aluminum ruthenium Chemical compound [Al].[Ru] DRVLHCMOXCBPHN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- QHGJSLXSVXVKHZ-UHFFFAOYSA-N dilithium;dioxido(dioxo)manganese Chemical compound [Li+].[Li+].[O-][Mn]([O-])(=O)=O QHGJSLXSVXVKHZ-UHFFFAOYSA-N 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001386 lithium phosphate Inorganic materials 0.000 description 2
- VROAXDSNYPAOBJ-UHFFFAOYSA-N lithium;oxido(oxo)nickel Chemical compound [Li+].[O-][Ni]=O VROAXDSNYPAOBJ-UHFFFAOYSA-N 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/142—Contactless power supplies, e.g. RF, induction, or IR
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006349191 | 2006-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200837756A TW200837756A (en) | 2008-09-16 |
| TWI442398B true TWI442398B (zh) | 2014-06-21 |
Family
ID=39542557
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096148787A TWI442398B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
| TW103113846A TWI517153B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103113846A TWI517153B (zh) | 2006-12-26 | 2007-12-19 | 半導體裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7773436B2 (https=) |
| JP (2) | JP2008181634A (https=) |
| KR (1) | KR101514628B1 (https=) |
| TW (2) | TWI442398B (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044813B1 (en) * | 2006-11-16 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Radio field intensity measurement device, and radio field intensity detector and game console using the same |
| JP5100355B2 (ja) * | 2006-12-22 | 2012-12-19 | 株式会社半導体エネルギー研究所 | 温度制御装置 |
| JP2008181634A (ja) * | 2006-12-26 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8143844B2 (en) * | 2007-01-19 | 2012-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Charging device |
| US7750852B2 (en) | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2009087928A (ja) * | 2007-09-13 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR101829176B1 (ko) * | 2009-11-20 | 2018-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011089835A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| TWI543177B (zh) | 2010-08-19 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其檢驗方法與其驅動方法 |
| US9024317B2 (en) * | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
| TWI587335B (zh) | 2011-10-19 | 2017-06-11 | 國立成功大學 | 具p(an-eg-an)複合高分子膠態電解質之超級電容 器及其製造方法 |
| KR101555753B1 (ko) * | 2013-11-18 | 2015-09-30 | 서울대학교산학협력단 | 단일 공정의 부식 방지된 구리 페이스트 제조와 다이폴 태그 안테나로의 응용 |
| JP6353247B2 (ja) * | 2014-03-11 | 2018-07-04 | キヤノン株式会社 | 半導体装置、その制御方法、及びカメラ |
| US10204898B2 (en) | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6553444B2 (ja) * | 2014-08-08 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102269899B1 (ko) | 2015-01-12 | 2021-06-28 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| US10096631B2 (en) | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
| JP7391874B2 (ja) * | 2018-11-08 | 2023-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250599A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | 半導体メモリ装置 |
| KR950008676B1 (ko) | 1986-04-23 | 1995-08-04 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 메모리 장치 및 그의 결함 구제 방법 |
| JP2765862B2 (ja) * | 1987-08-31 | 1998-06-18 | 株式会社日立製作所 | 半導体メモリ装置 |
| US4937790A (en) | 1987-08-31 | 1990-06-26 | Hitachi, Ltd. | Semiconductor memory device |
| JPH01269299A (ja) * | 1988-04-20 | 1989-10-26 | Hitachi Ltd | 半導体メモリ装置 |
| JP2892715B2 (ja) * | 1989-11-06 | 1999-05-17 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH04228196A (ja) * | 1990-04-18 | 1992-08-18 | Hitachi Ltd | 半導体集積回路 |
| US5278839A (en) | 1990-04-18 | 1994-01-11 | Hitachi, Ltd. | Semiconductor integrated circuit having self-check and self-repair capabilities |
| JP2978536B2 (ja) * | 1990-07-04 | 1999-11-15 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH0636592A (ja) * | 1992-07-13 | 1994-02-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5452251A (en) * | 1992-12-03 | 1995-09-19 | Fujitsu Limited | Semiconductor memory device for selecting and deselecting blocks of word lines |
| JP3257860B2 (ja) * | 1993-05-17 | 2002-02-18 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH08138018A (ja) | 1994-11-10 | 1996-05-31 | Rikagaku Kenkyusho | データ・キャリア・システム |
| GB9424598D0 (en) * | 1994-12-06 | 1995-01-25 | Philips Electronics Uk Ltd | Semiconductor memory with non-volatile memory transistor |
| JPH09128991A (ja) | 1995-08-25 | 1997-05-16 | Sharp Corp | 冗長救済回路 |
| US6041000A (en) * | 1998-10-30 | 2000-03-21 | Stmicroelectronics, Inc. | Initialization for fuse control |
| DE19950362C1 (de) | 1999-10-19 | 2001-06-07 | Infineon Technologies Ag | DRAM-Zellenanordnung, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung |
| JP2001135084A (ja) | 1999-11-08 | 2001-05-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP4191355B2 (ja) * | 2000-02-10 | 2008-12-03 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| US6284406B1 (en) * | 2000-06-09 | 2001-09-04 | Ntk Powerdex, Inc. | IC card with thin battery |
| FR2811132B1 (fr) * | 2000-06-30 | 2002-10-11 | St Microelectronics Sa | Circuit de memoire dynamique comportant des cellules de secours |
| JP4345204B2 (ja) | 2000-07-04 | 2009-10-14 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| JP2002063797A (ja) * | 2000-08-22 | 2002-02-28 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US6525976B1 (en) * | 2000-10-24 | 2003-02-25 | Excellatron Solid State, Llc | Systems and methods for reducing noise in mixed-mode integrated circuits |
| US6362602B1 (en) * | 2001-05-03 | 2002-03-26 | Ford Global Technologies, Inc. | Strategy to control battery state of charge based on vehicle velocity |
| JP5119563B2 (ja) | 2001-08-03 | 2013-01-16 | 日本電気株式会社 | 不良メモリセル救済回路を有する半導体記憶装置 |
| US6818604B2 (en) * | 2001-10-04 | 2004-11-16 | Speedfam-Ipec Corporation | System and method for cleaning workpieces |
| JP3866588B2 (ja) * | 2002-03-01 | 2007-01-10 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
| US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US6865098B1 (en) * | 2003-05-30 | 2005-03-08 | Netlogic Microsystems, Inc. | Row redundancy in a content addressable memory device |
| US7030714B2 (en) * | 2003-10-01 | 2006-04-18 | Intel Corporation | Method and apparatus to match output impedance of combined outphasing power amplifiers |
| JP2005116106A (ja) * | 2003-10-09 | 2005-04-28 | Elpida Memory Inc | 半導体記憶装置とその製造方法 |
| US7239564B2 (en) * | 2003-11-19 | 2007-07-03 | Semiconductor Energy Laboratory, Co., Ltd. | Semiconductor device for rectifying memory defects |
| JP2005174533A (ja) | 2003-11-19 | 2005-06-30 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、ｉｃカード及び半導体装置の駆動方法 |
| JP2005209492A (ja) * | 2004-01-23 | 2005-08-04 | Mitsubishi Chemicals Corp | 電気化学デバイス、並びにこれを利用した電気二重層コンデンサ及び電池 |
| WO2006051996A1 (en) * | 2004-11-11 | 2006-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7719872B2 (en) * | 2005-12-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Write-once nonvolatile memory with redundancy capability |
| JP2008181634A (ja) * | 2006-12-26 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
2007
- 2007-12-12 JP JP2007320679A patent/JP2008181634A/ja not_active Withdrawn
- 2007-12-14 US US12/000,592 patent/US7773436B2/en not_active Expired - Fee Related
- 2007-12-18 KR KR1020070133163A patent/KR101514628B1/ko not_active Expired - Fee Related
- 2007-12-19 TW TW096148787A patent/TWI442398B/zh not_active IP Right Cessation
- 2007-12-19 TW TW103113846A patent/TWI517153B/zh not_active IP Right Cessation
-
2010
- 2010-08-05 US US12/850,736 patent/US8111567B2/en not_active Expired - Fee Related
-
2012
- 2012-01-27 US US13/359,534 patent/US8520457B2/en not_active Expired - Fee Related
-
2013
- 2013-06-20 JP JP2013129714A patent/JP2013178871A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20080151660A1 (en) | 2008-06-26 |
| TW201428741A (zh) | 2014-07-16 |
| TW200837756A (en) | 2008-09-16 |
| JP2013178871A (ja) | 2013-09-09 |
| US7773436B2 (en) | 2010-08-10 |
| KR20080060157A (ko) | 2008-07-01 |
| US8520457B2 (en) | 2013-08-27 |
| US20120120742A1 (en) | 2012-05-17 |
| TWI517153B (zh) | 2016-01-11 |
| JP2008181634A (ja) | 2008-08-07 |
| US20100302887A1 (en) | 2010-12-02 |
| KR101514628B1 (ko) | 2015-04-23 |
| US8111567B2 (en) | 2012-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI442398B (zh) | 半導體裝置 | |
| JP5041984B2 (ja) | 整流回路、電源回路及び半導体装置 | |
| US8712481B2 (en) | Electric power supply system and electric power supply system for motor vehicle | |
| CN101087074B (zh) | 蓄电装置及具备该蓄电装置的移动式电子设备 | |
| JP5412034B2 (ja) | 半導体装置 | |
| CN102171812B (zh) | 半导体器件 | |
| TWI423392B (zh) | 半導體裝置和電子裝置 | |
| KR101441349B1 (ko) | 반도체 장치 | |
| CN102664449B (zh) | 蓄电装置及具备该蓄电装置的半导体装置 | |
| JP4994216B2 (ja) | 半導体装置 | |
| JP2013131252A (ja) | 半導体装置 | |
| JP2008269751A (ja) | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 | |
| JP5100310B2 (ja) | 半導体装置 | |
| JP2010267253A (ja) | 復調信号生成回路および復調信号生成回路を有する半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |