TWI442188B - 平版裝置及物品製造方法 - Google Patents

平版裝置及物品製造方法 Download PDF

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Publication number
TWI442188B
TWI442188B TW100111009A TW100111009A TWI442188B TW I442188 B TWI442188 B TW I442188B TW 100111009 A TW100111009 A TW 100111009A TW 100111009 A TW100111009 A TW 100111009A TW I442188 B TWI442188 B TW I442188B
Authority
TW
Taiwan
Prior art keywords
visor
arc
substrate
light
region
Prior art date
Application number
TW100111009A
Other languages
English (en)
Chinese (zh)
Other versions
TW201200970A (en
Inventor
森堅一郎
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201200970A publication Critical patent/TW201200970A/zh
Application granted granted Critical
Publication of TWI442188B publication Critical patent/TWI442188B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100111009A 2010-04-28 2011-03-30 平版裝置及物品製造方法 TWI442188B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104232A JP5127875B2 (ja) 2010-04-28 2010-04-28 リソグラフィ装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
TW201200970A TW201200970A (en) 2012-01-01
TWI442188B true TWI442188B (zh) 2014-06-21

Family

ID=44858017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111009A TWI442188B (zh) 2010-04-28 2011-03-30 平版裝置及物品製造方法

Country Status (5)

Country Link
US (1) US8760627B2 (enExample)
JP (1) JP5127875B2 (enExample)
KR (1) KR101359080B1 (enExample)
CN (1) CN102236265B (enExample)
TW (1) TWI442188B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5836652B2 (ja) 2011-06-10 2015-12-24 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP6029289B2 (ja) 2012-02-28 2016-11-24 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6012200B2 (ja) * 2012-02-28 2016-10-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
NL2011172A (en) * 2012-07-23 2014-01-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP6200135B2 (ja) * 2012-07-24 2017-09-20 キヤノン株式会社 インプリント装置、インプリント方法、および、物品製造方法
DE102012218074A1 (de) * 2012-10-04 2013-08-14 Carl Zeiss Smt Gmbh Blenden-Vorrichtung
EP2904457A1 (en) * 2012-10-05 2015-08-12 Rudolph Technologies, Inc. Blade for substrate edge protection during photolithography
JP6288985B2 (ja) 2013-08-13 2018-03-07 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
NL2016271B1 (en) * 2016-02-16 2017-08-22 Liteq B V Lithographic apparatus and method for preventing peripheral exposure of a substrate.
JP6177409B2 (ja) * 2016-10-19 2017-08-09 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6936672B2 (ja) * 2017-09-19 2021-09-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
KR102439935B1 (ko) 2018-02-27 2022-09-02 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치
JP7162430B2 (ja) * 2018-02-27 2022-10-28 株式会社オーク製作所 投影露光装置
JP7179420B2 (ja) 2019-01-29 2022-11-29 株式会社オーク製作所 投影露光装置及び投影露光装置に使用する遮光板
JP7446069B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
JP7446799B2 (ja) * 2019-12-05 2024-03-11 キヤノン株式会社 インプリント方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3056206B1 (ja) * 1999-03-18 2000-06-26 広島日本電気株式会社 ダミーパターン形成方法及び半導体製造方法
US6830852B2 (en) * 2001-07-19 2004-12-14 Nikon Corporation Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles
US6680774B1 (en) * 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
JP2003158067A (ja) * 2001-11-22 2003-05-30 Hitachi Ltd 半導体装置の製造方法および露光装置
TWI251116B (en) 2002-12-19 2006-03-11 Asml Netherlands Bv Device manufacturing method, computer-readable medium and lithographic apparatus
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP4458329B2 (ja) 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
JP4481698B2 (ja) * 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2006040915A (ja) * 2004-07-22 2006-02-09 Seiko Epson Corp 半導体装置の製造方法、及びその製造装置、並びに電気光学装置の製造方法
US7936447B2 (en) * 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7525640B2 (en) * 2006-11-07 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4838698B2 (ja) 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
US7777863B2 (en) * 2007-05-30 2010-08-17 Asml Netherlands B.V. Lithographic apparatus with mask to prevent exposure of peripheral exposure region of substrate
JP2009239018A (ja) * 2008-03-27 2009-10-15 Orc Mfg Co Ltd 投影露光装置
NL2003962A (en) * 2008-12-24 2010-06-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
US8760627B2 (en) 2014-06-24
KR20110120220A (ko) 2011-11-03
CN102236265A (zh) 2011-11-09
KR101359080B1 (ko) 2014-02-05
US20110267595A1 (en) 2011-11-03
JP2011233781A (ja) 2011-11-17
CN102236265B (zh) 2014-01-29
JP5127875B2 (ja) 2013-01-23
TW201200970A (en) 2012-01-01

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