KR101359080B1 - 리소그래피 장치 및 물품의 제조 방법 - Google Patents

리소그래피 장치 및 물품의 제조 방법 Download PDF

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KR101359080B1
KR101359080B1 KR1020110036762A KR20110036762A KR101359080B1 KR 101359080 B1 KR101359080 B1 KR 101359080B1 KR 1020110036762 A KR1020110036762 A KR 1020110036762A KR 20110036762 A KR20110036762 A KR 20110036762A KR 101359080 B1 KR101359080 B1 KR 101359080B1
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South Korea
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light
substrate
light shielding
shielding plate
arc
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Korean (ko)
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KR20110120220A (ko
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겐이찌로 모리
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020110036762A 2010-04-28 2011-04-20 리소그래피 장치 및 물품의 제조 방법 Active KR101359080B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010104232A JP5127875B2 (ja) 2010-04-28 2010-04-28 リソグラフィ装置及び物品の製造方法
JPJP-P-2010-104232 2010-04-28

Publications (2)

Publication Number Publication Date
KR20110120220A KR20110120220A (ko) 2011-11-03
KR101359080B1 true KR101359080B1 (ko) 2014-02-05

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KR1020110036762A Active KR101359080B1 (ko) 2010-04-28 2011-04-20 리소그래피 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US8760627B2 (enExample)
JP (1) JP5127875B2 (enExample)
KR (1) KR101359080B1 (enExample)
CN (1) CN102236265B (enExample)
TW (1) TWI442188B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5836652B2 (ja) 2011-06-10 2015-12-24 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP6012200B2 (ja) * 2012-02-28 2016-10-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6029289B2 (ja) 2012-02-28 2016-11-24 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
NL2011172A (en) * 2012-07-23 2014-01-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP6200135B2 (ja) * 2012-07-24 2017-09-20 キヤノン株式会社 インプリント装置、インプリント方法、および、物品製造方法
DE102012218074A1 (de) * 2012-10-04 2013-08-14 Carl Zeiss Smt Gmbh Blenden-Vorrichtung
US20150277239A1 (en) * 2012-10-05 2015-10-01 Rudolph Technologies, Inc. Multiple-Blade Device for Substrate Edge Protection during Photolithography
JP6288985B2 (ja) * 2013-08-13 2018-03-07 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
NL2016271B1 (en) * 2016-02-16 2017-08-22 Liteq B V Lithographic apparatus and method for preventing peripheral exposure of a substrate.
JP6177409B2 (ja) * 2016-10-19 2017-08-09 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6936672B2 (ja) * 2017-09-19 2021-09-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7162430B2 (ja) * 2018-02-27 2022-10-28 株式会社オーク製作所 投影露光装置
KR102439935B1 (ko) 2018-02-27 2022-09-02 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
JP7179420B2 (ja) 2019-01-29 2022-11-29 株式会社オーク製作所 投影露光装置及び投影露光装置に使用する遮光板
JP7446069B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
JP7446799B2 (ja) * 2019-12-05 2024-03-11 キヤノン株式会社 インプリント方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269122A (ja) 1999-03-18 2000-09-29 Hiroshima Nippon Denki Kk ダミーパターン形成方法及び半導体製造方法
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP2005191495A (ja) 2003-12-26 2005-07-14 Canon Inc 照明光学系、露光装置、デバイスの製造方法
KR100929268B1 (ko) 2006-12-19 2009-11-27 캐논 가부시끼가이샤 노광장치 및 디바이스 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830852B2 (en) 2001-07-19 2004-12-14 Nikon Corporation Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles
US6680774B1 (en) * 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
JP2003158067A (ja) * 2001-11-22 2003-05-30 Hitachi Ltd 半導体装置の製造方法および露光装置
TWI251116B (en) 2002-12-19 2006-03-11 Asml Netherlands Bv Device manufacturing method, computer-readable medium and lithographic apparatus
JP4481698B2 (ja) 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2006040915A (ja) * 2004-07-22 2006-02-09 Seiko Epson Corp 半導体装置の製造方法、及びその製造装置、並びに電気光学装置の製造方法
US7936447B2 (en) * 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7525640B2 (en) 2006-11-07 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7777863B2 (en) * 2007-05-30 2010-08-17 Asml Netherlands B.V. Lithographic apparatus with mask to prevent exposure of peripheral exposure region of substrate
JP2009239018A (ja) * 2008-03-27 2009-10-15 Orc Mfg Co Ltd 投影露光装置
NL2003962A (en) * 2008-12-24 2010-06-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269122A (ja) 1999-03-18 2000-09-29 Hiroshima Nippon Denki Kk ダミーパターン形成方法及び半導体製造方法
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP2005191495A (ja) 2003-12-26 2005-07-14 Canon Inc 照明光学系、露光装置、デバイスの製造方法
KR100929268B1 (ko) 2006-12-19 2009-11-27 캐논 가부시끼가이샤 노광장치 및 디바이스 제조방법

Also Published As

Publication number Publication date
KR20110120220A (ko) 2011-11-03
CN102236265A (zh) 2011-11-09
US20110267595A1 (en) 2011-11-03
JP2011233781A (ja) 2011-11-17
TW201200970A (en) 2012-01-01
CN102236265B (zh) 2014-01-29
US8760627B2 (en) 2014-06-24
JP5127875B2 (ja) 2013-01-23
TWI442188B (zh) 2014-06-21

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