TWI437641B - 熱處理裝置及半導體裝置之製造方法 - Google Patents
熱處理裝置及半導體裝置之製造方法 Download PDFInfo
- Publication number
- TWI437641B TWI437641B TW100104543A TW100104543A TWI437641B TW I437641 B TWI437641 B TW I437641B TW 100104543 A TW100104543 A TW 100104543A TW 100104543 A TW100104543 A TW 100104543A TW I437641 B TWI437641 B TW I437641B
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction tube
- temperature
- substrate
- exhaust
- manifold
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010039845A JP5477955B2 (ja) | 2010-02-25 | 2010-02-25 | 熱処理装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142951A TW201142951A (en) | 2011-12-01 |
| TWI437641B true TWI437641B (zh) | 2014-05-11 |
Family
ID=44476878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104543A TWI437641B (zh) | 2010-02-25 | 2011-02-11 | 熱處理裝置及半導體裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8734148B2 (enExample) |
| JP (1) | JP5477955B2 (enExample) |
| KR (2) | KR20110097606A (enExample) |
| CN (1) | CN102194661B (enExample) |
| TW (1) | TWI437641B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5792390B2 (ja) * | 2012-07-30 | 2015-10-14 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP6385257B2 (ja) * | 2014-11-27 | 2018-09-05 | 光洋サーモシステム株式会社 | 熱処理装置 |
| US10375901B2 (en) | 2014-12-09 | 2019-08-13 | Mtd Products Inc | Blower/vacuum |
| KR101895404B1 (ko) | 2015-12-29 | 2018-09-05 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN107740191A (zh) * | 2017-12-01 | 2018-02-27 | 浙江海洋大学 | 一种热处理装置 |
| WO2019186681A1 (ja) * | 2018-03-27 | 2019-10-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置及び半導体装置の製造方法 |
| CN110736345B (zh) * | 2018-07-18 | 2021-01-29 | 北京北方华创微电子装备有限公司 | 用于SiC高温氧化工艺的工艺腔室及热处理炉 |
| US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2650908B2 (ja) * | 1987-04-17 | 1997-09-10 | 株式会社日立製作所 | 熱処理方法 |
| JPH0287618A (ja) * | 1988-09-26 | 1990-03-28 | Tel Sagami Ltd | 熱処理装置 |
| JP4070832B2 (ja) * | 1996-02-13 | 2008-04-02 | 株式会社日立国際電気 | 半導体製造装置 |
| US5848889A (en) * | 1996-07-24 | 1998-12-15 | Applied Materials Inc. | Semiconductor wafer support with graded thermal mass |
| US5846073A (en) * | 1997-03-07 | 1998-12-08 | Semitool, Inc. | Semiconductor furnace processing vessel base |
| JPH10303099A (ja) | 1997-04-24 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000243747A (ja) * | 1999-02-18 | 2000-09-08 | Kokusai Electric Co Ltd | 基板処理装置 |
| TW522482B (en) | 2000-08-23 | 2003-03-01 | Tokyo Electron Ltd | Vertical heat treatment system, method for controlling vertical heat treatment system, and method for transferring object to be treated |
| US7534977B2 (en) * | 2000-12-28 | 2009-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and method of manufacturing a semiconductor device |
| JP4523225B2 (ja) | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP5157100B2 (ja) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP4167280B2 (ja) * | 2006-08-25 | 2008-10-15 | 株式会社日立国際電気 | 半導体製造装置及び半導体の製造方法 |
| KR100942067B1 (ko) | 2007-12-06 | 2010-02-11 | 주식회사 테라세미콘 | 고온 퍼니스 |
| JP5176771B2 (ja) * | 2008-08-14 | 2013-04-03 | 信越半導体株式会社 | 縦型熱処理装置及び熱処理方法 |
| JP5751549B2 (ja) * | 2010-03-15 | 2015-07-22 | 株式会社日立国際電気 | 熱処理装置及び半導体の製造方法 |
-
2010
- 2010-02-25 JP JP2010039845A patent/JP5477955B2/ja active Active
- 2010-12-17 KR KR1020100129771A patent/KR20110097606A/ko not_active Abandoned
-
2011
- 2011-02-11 TW TW100104543A patent/TWI437641B/zh active
- 2011-02-24 US US13/033,974 patent/US8734148B2/en active Active
- 2011-02-25 CN CN2011100486694A patent/CN102194661B/zh active Active
-
2012
- 2012-12-18 KR KR1020120148003A patent/KR101241933B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5477955B2 (ja) | 2014-04-23 |
| KR101241933B1 (ko) | 2013-03-11 |
| JP2011176178A (ja) | 2011-09-08 |
| KR20110097606A (ko) | 2011-08-31 |
| US8734148B2 (en) | 2014-05-27 |
| KR20130009938A (ko) | 2013-01-24 |
| CN102194661B (zh) | 2013-11-27 |
| CN102194661A (zh) | 2011-09-21 |
| TW201142951A (en) | 2011-12-01 |
| US20110207339A1 (en) | 2011-08-25 |
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