CN102194661B - 热处理装置及半导体装置的制造方法 - Google Patents

热处理装置及半导体装置的制造方法 Download PDF

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Publication number
CN102194661B
CN102194661B CN2011100486694A CN201110048669A CN102194661B CN 102194661 B CN102194661 B CN 102194661B CN 2011100486694 A CN2011100486694 A CN 2011100486694A CN 201110048669 A CN201110048669 A CN 201110048669A CN 102194661 B CN102194661 B CN 102194661B
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reaction tube
substrate
temperature
exhaust
manifold
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Chinese (zh)
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CN102194661A (zh
Inventor
山崎惠信
林田晃
上野正昭
泉学
野上克明
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INTERNATIONAL ELECTRIC CO Ltd
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Hitachi Kokusai Electric Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
CN2011100486694A 2010-02-25 2011-02-25 热处理装置及半导体装置的制造方法 Active CN102194661B (zh)

Applications Claiming Priority (2)

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JP2010-039845 2010-02-25
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

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CN102194661A CN102194661A (zh) 2011-09-21
CN102194661B true CN102194661B (zh) 2013-11-27

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US (1) US8734148B2 (enExample)
JP (1) JP5477955B2 (enExample)
KR (2) KR20110097606A (enExample)
CN (1) CN102194661B (enExample)
TW (1) TWI437641B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5792390B2 (ja) * 2012-07-30 2015-10-14 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6385257B2 (ja) * 2014-11-27 2018-09-05 光洋サーモシステム株式会社 熱処理装置
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
KR101895404B1 (ko) 2015-12-29 2018-09-05 세메스 주식회사 기판 처리 장치 및 방법
CN107740191A (zh) * 2017-12-01 2018-02-27 浙江海洋大学 一种热处理装置
WO2019186681A1 (ja) * 2018-03-27 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device

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CN1362731A (zh) * 2000-12-28 2002-08-07 株式会社半导体能源研究所 热处理设备和制造半导体器件的方法
CN1685477A (zh) * 2002-09-24 2005-10-19 东京毅力科创株式会社 热处理装置
CN101118841A (zh) * 2006-08-04 2008-02-06 东京毅力科创株式会社 半导体处理用的热处理装置

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JP2650908B2 (ja) * 1987-04-17 1997-09-10 株式会社日立製作所 熱処理方法
JPH0287618A (ja) * 1988-09-26 1990-03-28 Tel Sagami Ltd 熱処理装置
JP4070832B2 (ja) * 1996-02-13 2008-04-02 株式会社日立国際電気 半導体製造装置
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
JPH10303099A (ja) 1997-04-24 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
TW522482B (en) 2000-08-23 2003-03-01 Tokyo Electron Ltd Vertical heat treatment system, method for controlling vertical heat treatment system, and method for transferring object to be treated
JP4167280B2 (ja) * 2006-08-25 2008-10-15 株式会社日立国際電気 半導体製造装置及び半導体の製造方法
KR100942067B1 (ko) 2007-12-06 2010-02-11 주식회사 테라세미콘 고온 퍼니스
JP5176771B2 (ja) * 2008-08-14 2013-04-03 信越半導体株式会社 縦型熱処理装置及び熱処理方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1362731A (zh) * 2000-12-28 2002-08-07 株式会社半导体能源研究所 热处理设备和制造半导体器件的方法
CN1685477A (zh) * 2002-09-24 2005-10-19 东京毅力科创株式会社 热处理装置
CN101118841A (zh) * 2006-08-04 2008-02-06 东京毅力科创株式会社 半导体处理用的热处理装置

Also Published As

Publication number Publication date
JP5477955B2 (ja) 2014-04-23
KR101241933B1 (ko) 2013-03-11
JP2011176178A (ja) 2011-09-08
KR20110097606A (ko) 2011-08-31
TWI437641B (zh) 2014-05-11
US8734148B2 (en) 2014-05-27
KR20130009938A (ko) 2013-01-24
CN102194661A (zh) 2011-09-21
TW201142951A (en) 2011-12-01
US20110207339A1 (en) 2011-08-25

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Effective date of registration: 20181129

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Patentee after: International Electric Co., Ltd.

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Patentee before: Hitachi Kunisai Electric Corp.