JP5477955B2 - 熱処理装置および半導体装置の製造方法 - Google Patents

熱処理装置および半導体装置の製造方法 Download PDF

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Publication number
JP5477955B2
JP5477955B2 JP2010039845A JP2010039845A JP5477955B2 JP 5477955 B2 JP5477955 B2 JP 5477955B2 JP 2010039845 A JP2010039845 A JP 2010039845A JP 2010039845 A JP2010039845 A JP 2010039845A JP 5477955 B2 JP5477955 B2 JP 5477955B2
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Japan
Prior art keywords
enclosure
reaction tube
heat treatment
heater
temperature
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Active
Application number
JP2010039845A
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English (en)
Japanese (ja)
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JP2011176178A5 (enExample
JP2011176178A (ja
Inventor
恵信 山▲ざき▼
晃 林田
正昭 上野
学 泉
克明 野上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2010039845A priority Critical patent/JP5477955B2/ja
Priority to KR1020100129771A priority patent/KR20110097606A/ko
Priority to TW100104543A priority patent/TWI437641B/zh
Priority to US13/033,974 priority patent/US8734148B2/en
Priority to CN2011100486694A priority patent/CN102194661B/zh
Publication of JP2011176178A publication Critical patent/JP2011176178A/ja
Priority to KR1020120148003A priority patent/KR101241933B1/ko
Publication of JP2011176178A5 publication Critical patent/JP2011176178A5/ja
Application granted granted Critical
Publication of JP5477955B2 publication Critical patent/JP5477955B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
JP2010039845A 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法 Active JP5477955B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法
KR1020100129771A KR20110097606A (ko) 2010-02-25 2010-12-17 열처리 장치 및 반도체 장치의 제조 방법
TW100104543A TWI437641B (zh) 2010-02-25 2011-02-11 熱處理裝置及半導體裝置之製造方法
US13/033,974 US8734148B2 (en) 2010-02-25 2011-02-24 Heat treatment apparatus and method of manufacturing semiconductor device
CN2011100486694A CN102194661B (zh) 2010-02-25 2011-02-25 热处理装置及半导体装置的制造方法
KR1020120148003A KR101241933B1 (ko) 2010-02-25 2012-12-18 열처리 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011176178A JP2011176178A (ja) 2011-09-08
JP2011176178A5 JP2011176178A5 (enExample) 2013-03-07
JP5477955B2 true JP5477955B2 (ja) 2014-04-23

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JP2010039845A Active JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US8734148B2 (enExample)
JP (1) JP5477955B2 (enExample)
KR (2) KR20110097606A (enExample)
CN (1) CN102194661B (enExample)
TW (1) TWI437641B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101750633B1 (ko) * 2012-07-30 2017-06-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6385257B2 (ja) * 2014-11-27 2018-09-05 光洋サーモシステム株式会社 熱処理装置
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
KR101895404B1 (ko) 2015-12-29 2018-09-05 세메스 주식회사 기판 처리 장치 및 방법
CN107740191A (zh) * 2017-12-01 2018-02-27 浙江海洋大学 一种热处理装置
JP6918211B2 (ja) * 2018-03-27 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650908B2 (ja) * 1987-04-17 1997-09-10 株式会社日立製作所 熱処理方法
JPH0287618A (ja) * 1988-09-26 1990-03-28 Tel Sagami Ltd 熱処理装置
JP4070832B2 (ja) * 1996-02-13 2008-04-02 株式会社日立国際電気 半導体製造装置
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
JPH10303099A (ja) 1997-04-24 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
TW522482B (en) 2000-08-23 2003-03-01 Tokyo Electron Ltd Vertical heat treatment system, method for controlling vertical heat treatment system, and method for transferring object to be treated
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
JP4523225B2 (ja) 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
JP4167280B2 (ja) * 2006-08-25 2008-10-15 株式会社日立国際電気 半導体製造装置及び半導体の製造方法
KR100942067B1 (ko) 2007-12-06 2010-02-11 주식회사 테라세미콘 고온 퍼니스
JP5176771B2 (ja) * 2008-08-14 2013-04-03 信越半導体株式会社 縦型熱処理装置及び熱処理方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法

Also Published As

Publication number Publication date
CN102194661B (zh) 2013-11-27
KR20110097606A (ko) 2011-08-31
US8734148B2 (en) 2014-05-27
TW201142951A (en) 2011-12-01
TWI437641B (zh) 2014-05-11
US20110207339A1 (en) 2011-08-25
KR101241933B1 (ko) 2013-03-11
JP2011176178A (ja) 2011-09-08
KR20130009938A (ko) 2013-01-24
CN102194661A (zh) 2011-09-21

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